Toshiba Semiconductor and Storage Producten

2SD2257,NIKKIQ(J

Toshiba Semiconductor and Storage

TRANS NPN 3A 100V TO220-3

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 3A
• Voltage - Collector Emitter Breakdown (Max): 100V
• Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.5mA, 1.5A
• Current - Collector Cutoff (Max): 10µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 2A, 2V
• Power - Max: 2W
• Frequency - Transition: -
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack
• Supplier Device Package: TO-220NIS

package: TO-220-3 Full Pack

RN1110CT(TPL3)

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 0.05W CST3

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 50mA
• Voltage - Collector Emitter Breakdown (Max): 20V
• Resistor - Base (R1) (Ohms): 4.7k
• Resistor - Emitter Base (R2) (Ohms): -
• DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: -
• Power - Max: 50mW
• Mounting Type: Surface Mount
• Package / Case: SC-101, SOT-883
• Supplier Device Package: CST3

package: SC-101, SOT-883

RN1312(TE85L,F)

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 0.15W USM

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 22k
• Resistor - Emitter Base (R2) (Ohms): -
• DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 250MHz
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: USM

package: SC-70, SOT-323

RN1103MFV,L3F

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 150MW VESM

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 22k
• Resistor - Emitter Base (R2) (Ohms): 22k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: -
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Package / Case: SOT-723
• Supplier Device Package: VESM

package: SOT-723

HN2S03FUTE85LF

Toshiba Semiconductor and Storage

DIODE ARRAY SCHOTTKY 20V US6

• Diode Configuration: 3 Independent
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 20V
• Current - Average Rectified (Io) (per Diode): 50mA
• Voltage - Forward (Vf) (Max) @ If: 550mV @ 50mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500nA @ 20V
• Operating Temperature - Junction: 125°C (Max)
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: US6

package: 6-TSSOP, SC-88, SOT-363

TA78DS05CP(T6ND,AF

Toshiba Semiconductor and Storage

IC REG LINEAR 30MA LSTM

• Output Configuration: -
• Output Type: -
• Number of Regulators: 1
• Voltage - Input (Max): -
• Voltage - Output (Min/Fixed): -
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 30mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: -
• Control Features: -
• Protection Features: -
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 Long Body
• Supplier Device Package: LSTM

package: TO-226-3, TO-92-3 Long Body

TCR2EN105,LF

Toshiba Semiconductor and Storage

IC REG LINEAR 1.05V 200MA 4SDFN

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 1.05V
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 200mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 60µA
• PSRR: 73dB (1kHz)
• Control Features: Enable
• Protection Features: Over Current
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 4-XFDFN Exposed Pad
• Supplier Device Package: 4-SDFN (0.8x0.8)

package: 4-XFDFN Exposed Pad

TCR2EF18,LM(CT

Toshiba Semiconductor and Storage

IC REG LINEAR 1.8V 200MA SMV

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 1.8V
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 200mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 60µA
• PSRR: 73dB (1kHz)
• Control Features: Enable
• Protection Features: Over Current
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: SC-74A, SOT-753
• Supplier Device Package: SMV

package: SC-74A, SOT-753

TBD62308APG,HZ

Toshiba Semiconductor and Storage

IC LOAD SWITCH 16DIP

• Switch Type: General Purpose
• Number of Outputs: 4
• Ratio - Input:Output: 1:1
• Output Configuration: Low Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 50V (Max)
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 1.5A
• Rds On (Typ): 370 mOhm
• Input Type: Inverting
• Features: -
• Fault Protection: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 16-DIP (0.300", 7.62mm)
• Supplier Device Package: 16-DIP

package: 16-DIP (0.300", 7.62mm)

TC58NVG1S3ETA00

Toshiba Semiconductor and Storage

IC EEPROM 2GBIT 25NS 48TSOP

• Memory Type: Non-Volatile
• Memory Format: EEPROM
• Technology: EEPROM
• Memory Size: 2Gb (256M x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 25ns
• Access Time: 25ns
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 48-TFSOP (0.724", 18.40mm Width)
• Supplier Device Package: 48-TSOP I

package: 48-TFSOP (0.724", 18.40mm Width)

TC58BVG1S3HTA00

Toshiba Semiconductor and Storage

IC EEPROM 2GBIT 25NS 48TSOP

• Memory Type: Non-Volatile
• Memory Format: EEPROM
• Technology: EEPROM - NAND
• Memory Size: 2Gb (256M x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 25ns
• Access Time: 25ns
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 48-TFSOP (0.724", 18.40mm Width)
• Supplier Device Package: 48-TSOP I

package: 48-TFSOP (0.724", 18.40mm Width)

TC7S04F,LF

Toshiba Semiconductor and Storage

IC INVERTER 74HC04 5-SSOP

• Logic Type: Inverter
• Number of Circuits: 1
• Number of Inputs: 1
• Features: -
• Voltage - Supply: 2 V ~ 6 V
• Current - Quiescent (Max): 1µA
• Current - Output High, Low: 2.6mA, 2.6mA
• Logic Level - Low: 0.5 V ~ 1.8 V
• Logic Level - High: 1.5 V ~ 4.2 V
• Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Supplier Device Package: SMV
• Package / Case: SC-74A, SOT-753

package: SC-74A, SOT-753

TC7WZ74FK,LJ(CT

Toshiba Semiconductor and Storage

IC D-TYPE POS TRG SNGL 8SSOP

• Function: Set(Preset) and Reset
• Type: D-Type
• Output Type: Push-Pull
• Number of Elements: 1
• Number of Bits per Element: 1
• Clock Frequency: 200MHz
• Max Propagation Delay @ V, Max CL: 4ns @ 5V, 50pF
• Trigger Type: Positive Edge
• Current - Output High, Low: 32mA, 32mA
• Voltage - Supply: 1.65 V ~ 5.5 V
• Current - Quiescent (Iq): 10µA
• Input Capacitance: 3pF
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-VFSOP (0.091", 2.30mm Width)

package: 8-VFSOP (0.091", 2.30mm Width)

TC7SZ34AFS,L3J(T

Toshiba Semiconductor and Storage

IC GATE USV L-MOS FSV

• Logic Type: Buffer, Non-Inverting
• Number of Elements: 1
• Number of Bits per Element: 1
• Input Type: -
• Output Type: Push-Pull
• Current - Output High, Low: 32mA, 32mA
• Voltage - Supply: 1.65 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: SOT-953
• Supplier Device Package: fSV

package: SOT-953

TC7SH126F,LJ(CT

Toshiba Semiconductor and Storage

IC BUFF NON-INVERT 3-ST SMV

• Logic Type: Buffer, Non-Inverting
• Number of Elements: 1
• Number of Bits per Element: 1
• Input Type: -
• Output Type: Push-Pull
• Current - Output High, Low: 8mA, 8mA
• Voltage - Supply: 2 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: SC-74A, SOT-753
• Supplier Device Package: SMV

package: SC-74A, SOT-753

TL1L4-LW1,L

Toshiba Semiconductor and Storage

LED LETERAS WARM WHT 3000K 2SMD

• Color: White, Warm
• CCT (K): 3000K
• Flux @ 85°C, Current - Test: 120 lm (105 lm ~ 135 lm)
• Flux @ 25°C, Current - Test: -
• Current - Test: 350mA
• Voltage - Forward (Vf) (Typ): 2.8V
• Lumens/Watt @ Current - Test: 122 lm/W
• CRI (Color Rendering Index): 80
• Current - Max: 1.5A
• Viewing Angle: 120°
• Mounting Type: Surface Mount
• Package / Case: 1414 (3535 Metric)
• Supplier Device Package: 3535
• Size / Dimension: 0.138" L x 0.138" W (3.50mm x 3.50mm)
• Height - Seated (Max): 0.085" (2.15mm)

package: 1414 (3535 Metric)

TLWNF1109(T11(O

Toshiba Semiconductor and Storage

LED WHITE 4SMD

• Color: White
• Configuration: -
• Lens Color: -
• Lens Transparency: -
• Millicandela Rating: 3200mcd
• Lens Style/Size: Oval with Flat Top
• Voltage - Forward (Vf) (Typ): 3.5V
• Current - Test: 40mA
• Viewing Angle: -
• Mounting Type: Surface Mount
• Wavelength - Dominant: -
• Wavelength - Peak: -
• Features: -
• Package / Case: 4-SMD, J-Lead
• Supplier Device Package: -
• Size / Dimension: 3.20mm L x 2.90mm W
• Height (Max): 2.10mm

package: 4-SMD, J-Lead

TLWLF1108(T11(O

Toshiba Semiconductor and Storage

LED WARM WHITE 4SMD

• Color: White, Warm
• Configuration: -
• Lens Color: -
• Lens Transparency: -
• Millicandela Rating: 2500mcd
• Lens Style/Size: Oval with Flat Top
• Voltage - Forward (Vf) (Typ): 3.5V
• Current - Test: 40mA
• Viewing Angle: -
• Mounting Type: Surface Mount
• Wavelength - Dominant: -
• Wavelength - Peak: -
• Features: -
• Package / Case: 4-SMD, J-Lead
• Supplier Device Package: -
• Size / Dimension: 3.20mm L x 2.90mm W
• Height (Max): 2.10mm

package: 4-SMD, J-Lead

DF2S6.8SC(TPL3)

Toshiba Semiconductor and Storage

TVS DIODE 5VWM SC2

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 5V
• Voltage - Breakdown (Min): 6.4V
• Voltage - Clamping (Max) @ Ipp: -
• Current - Peak Pulse (10/1000µs): -
• Power - Peak Pulse: -
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: 15pF @ 1MHz
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: 2-SMD, No Lead
• Supplier Device Package: SC2

package: 2-SMD, No Lead

DF2S5.6ASL,L3F

Toshiba Semiconductor and Storage

TVS DIODE 3.5VWM SL2-2

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 3.5V (Max)
• Voltage - Breakdown (Min): 5.3V
• Voltage - Clamping (Max) @ Ipp: -
• Current - Peak Pulse (10/1000µs): -
• Power - Peak Pulse: -
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: 40pF @ 1MHz
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: 0201 (0603 Metric)
• Supplier Device Package: SL2

package: 0201 (0603 Metric)

TLP352(D4,F)

Toshiba Semiconductor and Storage

OPTOISO 3.75KV GATE DRVR 8DIP

• Technology: Optical Coupling
• Number of Channels: 1
• Voltage - Isolation: 3750Vrms
• Common Mode Transient Immunity (Min): 20kV/µs
• Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
• Pulse Width Distortion (Max): 50ns
• Rise / Fall Time (Typ): 15ns, 8ns
• Current - Output High, Low: 2A, 2A
• Current - Peak Output: 2.5A
• Voltage - Forward (Vf) (Typ): 1.55V
• Current - DC Forward (If) (Max): 20mA
• Voltage - Supply: 15 V ~ 30 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Through Hole
• Package / Case: 8-DIP (0.300", 7.62mm)
• Supplier Device Package: 8-DIP
• Approvals: CSA, cUL, UL, VDE

package: 8-DIP (0.300", 7.62mm)

TCR3DG18,LF

Toshiba Semiconductor and Storage

300MA LDO VOUT=1.8V DROPOUT=195M

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 1.8V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.365V @ 300mA
• Current - Output: 300mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: 70dB (1kHz)
• Control Features: Enable
• Protection Features: Inrush Current, Over Current, Over Temperature
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 4-XFBGA, CSPBGA
• Supplier Device Package: 4-WCSPE (0.65x0.65)

package: 4-XFBGA, CSPBGA

RN2102-LXHF-CT

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A SSM

• Transistor Type: PNP - Pre-Biased
• Current - Collector (Ic) (Max): 100 mA
• Voltage - Collector Emitter Breakdown (Max): 50 V
• Resistor - Base (R1) (Ohms): 10 kOhms
• Resistor - Emitter Base (R2) (Ohms): 10 kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 200 MHz
• Power - Max: 100 mW
• Mounting Type: Surface Mount
• Package / Case: SC-75, SOT-416
• Supplier Device Package: SSM

package: -

RN2413-LF

Toshiba Semiconductor and Storage

PB-F S-MINI PLN (LF) TRANSISTOR

• Transistor Type: PNP - Pre-Biased
• Current - Collector (Ic) (Max): 100 mA
• Voltage - Collector Emitter Breakdown (Max): 50 V
• Resistor - Base (R1) (Ohms): 47 kOhms
• Resistor - Emitter Base (R2) (Ohms): -
• DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 200 MHz
• Power - Max: 200 mW
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: S-Mini

package: -

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TTA1713-Y-LF

Toshiba Semiconductor and Storage

TRANS PNP 45V 0.5A SMINI

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 500 mA
• Voltage - Collector Emitter Breakdown (Max): 45 V
• Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
• Power - Max: 200 mW
• Frequency - Transition: 80MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: S-Mini

package: -

1SV308-L3F

Toshiba Semiconductor and Storage

RF DIODE PIN 30V ESC

• Diode Type: PIN - Single
• Voltage - Peak Reverse (Max): 30V
• Current - Max: 50 mA
• Capacitance @ Vr, F: 0.5pF @ 1V, 1MHz
• Resistance @ If, F: 1.5Ohm @ 10mA, 100MHz
• Power Dissipation (Max): -
• Operating Temperature: 125°C (TJ)
• Package / Case: SC-79, SOD-523
• Supplier Device Package: ESC

package: -

TK2R9E10PL-S1X

Toshiba Semiconductor and Storage

PB-F POWER MOSFET TRANSISTOR TO-

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100 V
• Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 50 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 306W (Tc)
• Rds On (Max) @ Id, Vgs: 2.9mOhm @ 50A, 10V
• Operating Temperature: 175°C
• Mounting Type: Through Hole
• Supplier Device Package: TO-220
• Package / Case: TO-220-3

package: -

TC7SH08FS-L3F

Toshiba Semiconductor and Storage

IC GATE AND 1CH 2-INP FSV

• Logic Type: AND Gate
• Number of Circuits: 1
• Number of Inputs: 2
• Features: -
• Voltage - Supply: 2V ~ 5.5V
• Current - Quiescent (Max): 2 µA
• Current - Output High, Low: 8mA, 8mA
• Logic Level - Low: 0.5V
• Logic Level - High: 1.5V
• Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Supplier Device Package: fSV
• Package / Case: SOT-953

package: -