Toshiba Semiconductor and Storage Producten

GT60N321(Q)

Toshiba Semiconductor and Storage

IGBT 1000V 60A 170W TO3P LH

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 1000V
• Current - Collector (Ic) (Max): 60A
• Current - Collector Pulsed (Icm): 120A
• Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 60A
• Power - Max: 170W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: 330ns/700ns
• Test Condition: -
• Reverse Recovery Time (trr): 2.5µs
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-3PL
• Supplier Device Package: TO-3P(LH)

package: TO-3PL

TPC8126,LQ(CM

Toshiba Semiconductor and Storage

MOSFET P-CH 30V 11A 8SOP

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 500µA
• Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 10V
• Vgs (Max): +20V, -25V
• FET Feature: -
• Power Dissipation (Max): 1W (Ta)
• Rds On (Max) @ Id, Vgs: 10 mOhm @ 5.5A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SOP (5.5x6.0)
• Package / Case: 8-SOIC (0.173", 4.40mm Width)

package: 8-SOIC (0.173", 4.40mm Width)

TJ50S06M3L(T6L1,NQ

Toshiba Semiconductor and Storage

MOSFET P-CH 60V 50A DPAK-3

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 3V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 124nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 6290pF @ 10V
• Vgs (Max): +10V, -20V
• FET Feature: -
• Power Dissipation (Max): 90W (Tc)
• Rds On (Max) @ Id, Vgs: 13.8 mOhm @ 25A, 10V
• Operating Temperature: 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: DPAK+
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

package: TO-252-3, DPak (2 Leads + Tab), SC-63

2SA949-Y,ONK-1F(J

Toshiba Semiconductor and Storage

TRANS PNP 50MA 150V TO226-3

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 50mA
• Voltage - Collector Emitter Breakdown (Max): 150V
• Vce Saturation (Max) @ Ib, Ic: 800mV @ 1mA, 10A
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
• Power - Max: 800mW
• Frequency - Transition: 120MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 Long Body
• Supplier Device Package: TO-92MOD

package: TO-226-3, TO-92-3 Long Body

2SA1020-Y(T6CN,A,F

Toshiba Semiconductor and Storage

TRANS PNP 2A 50V TO226-3

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 2A
• Voltage - Collector Emitter Breakdown (Max): 50V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
• Current - Collector Cutoff (Max): 1µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
• Power - Max: 900mW
• Frequency - Transition: 100MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 Long Body
• Supplier Device Package: TO-92MOD

package: TO-226-3, TO-92-3 Long Body

RN1106CT(TPL3)

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 0.05W CST3

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 50mA
• Voltage - Collector Emitter Breakdown (Max): 20V
• Resistor - Base (R1) (Ohms): 4.7k
• Resistor - Emitter Base (R2) (Ohms): 47k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: -
• Power - Max: 50mW
• Mounting Type: Surface Mount
• Package / Case: SC-101, SOT-883
• Supplier Device Package: CST3

package: SC-101, SOT-883

RN4981,LF(CT

Toshiba Semiconductor and Storage

TRANS NPN/PNP PREBIAS 0.2W US6

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 4.7k
• Resistor - Emitter Base (R2) (Ohms): 4.7k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 100µA (ICBO)
• Frequency - Transition: 250MHz, 200MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: US6

package: 6-TSSOP, SC-88, SOT-363

TBD62502AFWG,EL

Toshiba Semiconductor and Storage

IC LOAD SWITCH 7CH 0.3A 16PSOP

• Switch Type: General Purpose
• Number of Outputs: 7
• Ratio - Input:Output: 1:1
• Output Configuration: Low Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 50V (Max)
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 1.75A
• Rds On (Typ): -
• Input Type: Inverting
• Features: -
• Fault Protection: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 16-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 16-SOP

package: 16-SOIC (0.154", 3.90mm Width)

TB62208FNG,C8,EL

Toshiba Semiconductor and Storage

IC MOTOR DRIVER PAR 48HTSSOP

• Motor Type - Stepper: Bipolar
• Motor Type - AC, DC: -
• Function: Driver - Fully Integrated, Control and Power Stage
• Output Configuration: Half Bridge (4)
• Interface: Parallel
• Technology: DMOS
• Step Resolution: 1, 1/2
• Applications: General Purpose
• Current - Output: 1.8A
• Voltage - Supply: 4.5 V ~ 5.5 V
• Voltage - Load: 10 V ~ 38 V
• Operating Temperature: -20°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 48-TFSOP (0.240", 6.10mm Width) Exposed Pad
• Supplier Device Package: 48-HTSSOP

package: 48-TFSOP (0.240", 6.10mm Width) Exposed Pad

THGBMHG7C2LBAWR

Toshiba Semiconductor and Storage

IC FLASH 128GBIT 52MHZ 169BGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NAND
• Memory Size: 128Gb (16G x 8)
• Memory Interface: MMC
• Clock Frequency: 52MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 153-WFBGA
• Supplier Device Package: 153-WFBGA (11.5x13)

package: 153-WFBGA

TC74VHC595FK(EL,K)

Toshiba Semiconductor and Storage

IC 8-BIT SHIFT REGISTER 16VSSOP

• Logic Type: Shift Register
• Output Type: Tri-State
• Number of Elements: 1
• Number of Bits per Element: 8
• Function: Serial to Parallel
• Voltage - Supply: 2 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 16-VFSOP (0.118", 3.00mm Width)
• Supplier Device Package: 16-VSSOP

package: 16-VFSOP (0.118", 3.00mm Width)

74VHC125FT

Toshiba Semiconductor and Storage

IC BUS BUFFER QUAD N-INV 14TSSOP

• Logic Type: Buffer, Non-Inverting
• Number of Elements: 4
• Number of Bits per Element: 1
• Input Type: -
• Output Type: Push-Pull
• Current - Output High, Low: 8mA, 8mA
• Voltage - Supply: 2 V ~ 5.5 V
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 14-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 14-TSSOP

package: 14-TSSOP (0.173", 4.40mm Width)

TL1WK-NW1,LCS

Toshiba Semiconductor and Storage

LED LETERAS COOL WHT 5000K 2SMD

• Color: White, Cool
• CCT (K): 5000K
• Flux @ 85°C, Current - Test: -
• Flux @ 25°C, Current - Test: 22 lm (Typ)
• Current - Test: 180mA
• Voltage - Forward (Vf) (Typ): 2.8V
• Lumens/Watt @ Current - Test: 130 lm/W
• CRI (Color Rendering Index): 80
• Current - Max: 180mA
• Viewing Angle: 165°
• Mounting Type: Surface Mount
• Package / Case: 2-SMD, No Lead
• Supplier Device Package: SMD
• Size / Dimension: 0.026" L x 0.026" W (0.65mm x 0.65mm)
• Height - Seated (Max): 0.015" (0.39mm)

package: 2-SMD, No Lead

TLP3241(TP15,F)

Toshiba Semiconductor and Storage

PHOTORELAY 40V 4-SSOP

• Circuit: SPST-NO (1 Form A)
• Output Type: AC, DC
• On-State Resistance (Max): 10 Ohm
• Load Current: 140mA
• Voltage - Input: 1.3VDC
• Voltage - Load: 0 ~ 40 V
• Mounting Type: Surface Mount
• Termination Style: SMD (SMT) Tab
• Package / Case: 4-SMD (0.165", 4.20mm)
• Supplier Device Package: 4-SSOP
• Relay Type: Relay

package: 4-SMD (0.165", 4.20mm)

TLP293-4(4LGBTPE

Toshiba Semiconductor and Storage

OPTOISOLATOR 3.75KV TRANS SO16

• Number of Channels: 4
• Voltage - Isolation: 3750Vrms
• Current Transfer Ratio (Min): 100% @ 500µA
• Current Transfer Ratio (Max): 600% @ 500µA
• Turn On / Turn Off Time (Typ): 3µs, 3µs
• Rise / Fall Time (Typ): 2µs, 3µs
• Input Type: DC
• Output Type: Transistor
• Voltage - Output (Max): 80V
• Current - Output / Channel: 50mA
• Voltage - Forward (Vf) (Typ): 1.25V
• Current - DC Forward (If) (Max): 50mA
• Vce Saturation (Max): 300mV
• Operating Temperature: -55°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (0.179", 4.55mm Width)
• Supplier Device Package: 16-SO

package: 16-SOIC (0.179", 4.55mm Width)

TLP7930(F

Toshiba Semiconductor and Storage

ISOLATION AMPLIFIER; DIGITAL OUT

• Type: -
• Number of Channels: 1
• Resolution (Bits): -
• Sampling Rate (Per Second): -
• Data Interface: -
• Voltage Supply Source: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

package: -

TMPM361F10FG(C,J)

Toshiba Semiconductor and Storage

INTEGRATED CIRCUIT MICROCONTROLL

• Core Processor: -
• Core Size: -
• Speed: -
• Connectivity: -
• Peripherals: -
• Number of I/O: -
• Program Memory Size: -
• Program Memory Type: -
• EEPROM Size: -
• RAM Size: -
• Voltage - Supply (Vcc/Vdd): -
• Data Converters: -
• Oscillator Type: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

package: -

TMPM067FWQG(EL,Z)

Toshiba Semiconductor and Storage

TX FAMILY MCU

• Core Processor: ARM® Cortex®-M0
• Core Size: 32-Bit
• Speed: 24MHz
• Connectivity: I²C, SIO, SPI, UART/USART, USB
• Peripherals: DMA, LVD, POR, WDT
• Number of I/O: 32
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 16K x 8
• Voltage - Supply (Vcc/Vdd): 1.8 V ~ 3.6 V
• Data Converters: A/D 8x10b
• Oscillator Type: External
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: 48-VFQFN Exposed Pad
• Supplier Device Package: 48-QFN (7x7)

package: 48-VFQFN Exposed Pad

TB9057FG

Toshiba Semiconductor and Storage

AUTOMOTIVE MOTOR H-BRIDGE DRIVER

• Motor Type - Stepper: Bipolar
• Motor Type - AC, DC: Brushed DC
• Function: Driver
• Output Configuration: Pre-Driver
• Interface: PWM
• Technology: Bi-CMOS
• Step Resolution: -
• Applications: Automotive
• Current - Output: -
• Voltage - Supply: 5V ~ 21V
• Voltage - Load: -
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 48-LQFP
• Supplier Device Package: 48-LQFP (7x7)

package: 48-LQFP

RN2304-LF

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A SC70

• Transistor Type: PNP - Pre-Biased
• Current - Collector (Ic) (Max): 100 mA
• Voltage - Collector Emitter Breakdown (Max): 50 V
• Resistor - Base (R1) (Ohms): 47 kOhms
• Resistor - Emitter Base (R2) (Ohms): 47 kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 200 MHz
• Power - Max: 100 mW
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: SC-70

package: -

TC78H651FNG-EL

Toshiba Semiconductor and Storage

BRUSHED MOTOR DRIVER IC, 2-CHANN

• Motor Type - Stepper: Bipolar
• Motor Type - AC, DC: Brushed DC
• Function: Driver - Fully Integrated, Control and Power Stage
• Output Configuration: Half Bridge (4)
• Interface: -
• Technology: DMOS
• Step Resolution: -
• Applications: General Purpose
• Current - Output: 1.5A
• Voltage - Supply: 1.8V ~ 6V
• Voltage - Load: 1.8V ~ 6V
• Operating Temperature: -40°C ~ 105°C
• Mounting Type: Surface Mount
• Package / Case: 16-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 16-TSSOP

package: -

TB9058FNG-EL

Toshiba Semiconductor and Storage

AUTOMOTIVE H SWITCH MOTOR DRIVER

• Motor Type - Stepper: -
• Motor Type - AC, DC: Servo DC
• Function: Controller - Commutation, Direction Management
• Output Configuration: Half Bridge (2)
• Interface: PWM
• Technology: Bi-CMOS
• Step Resolution: -
• Applications: -
• Current - Output: 2A
• Voltage - Supply: 7V ~ 18V
• Voltage - Load: 0.5V ~ 12V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 24-LSSOP (0.220", 5.60mm Width)
• Supplier Device Package: 24-SSOP

package: -

RN1311-LF

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A SC70

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 100 mA
• Voltage - Collector Emitter Breakdown (Max): 50 V
• Resistor - Base (R1) (Ohms): 10 kOhms
• Resistor - Emitter Base (R2) (Ohms): -
• DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 250 MHz
• Power - Max: 100 mW
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: SC-70

package: -

1N4148WT-L3F-B

Toshiba Semiconductor and Storage

100 V/0.25 A SWITCHING DIODE, SO

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100 V
• Current - Average Rectified (Io): 250mA
• Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 3 ns
• Current - Reverse Leakage @ Vr: 200 nA @ 80 V
• Capacitance @ Vr, F: 0.5pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SC-79, SOD-523
• Supplier Device Package: ESC
• Operating Temperature - Junction: 150°C

package: -

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TW027N65C-S1F

Toshiba Semiconductor and Storage

G3 650V SIC-MOSFET TO-247 27MOH

• FET Type: N-Channel
• Technology: SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss): 650 V
• Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 18V
• Vgs(th) (Max) @ Id: 5V @ 3mA
• Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 18 V
• Input Capacitance (Ciss) (Max) @ Vds: 2288 pF @ 400 V
• Vgs (Max): +25V, -10V
• FET Feature: -
• Power Dissipation (Max): 156W (Tc)
• Rds On (Max) @ Id, Vgs: 37mOhm @ 29A, 18V
• Operating Temperature: 175°C
• Mounting Type: Through Hole
• Supplier Device Package: TO-247
• Package / Case: TO-247-3

package: -

TK12P60W-RVQ-S

Toshiba Semiconductor and Storage

MOSFET N-CH 600V 11.5A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600 V
• Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.7V @ 600µA
• Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 300 V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 100W (Tc)
• Rds On (Max) @ Id, Vgs: 340mOhm @ 5.8A, 10V
• Operating Temperature: 150°C
• Mounting Type: Surface Mount
• Supplier Device Package: DPAK
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

package: -

Request a Quote

S1PA7-UD

Toshiba Semiconductor and Storage

IGBT TRANS MODULE TO3PN

• IGBT Type: -
• Configuration: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Power - Max: -
• Vce(on) (Max) @ Vge, Ic: -
• Current - Collector Cutoff (Max): -
• Input Capacitance (Cies) @ Vce: -
• Input: -
• NTC Thermistor: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

package: -

Request a Quote

RN2103MFV-L3F-CT

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A VESM

• Transistor Type: PNP - Pre-Biased
• Current - Collector (Ic) (Max): 100 mA
• Voltage - Collector Emitter Breakdown (Max): 50 V
• Resistor - Base (R1) (Ohms): 22 kOhms
• Resistor - Emitter Base (R2) (Ohms): 22 kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 250 MHz
• Power - Max: 150 mW
• Mounting Type: Surface Mount
• Package / Case: SOT-723
• Supplier Device Package: VESM

package: -