Pagina 60 - Toshiba Semiconductor and Storage Producten | Heisener Electronics
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Toshiba Semiconductor and Storage Producten

Archief 4.549
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SSM3K116TU,LF
Toshiba Semiconductor and Storage

MOSFET N-CH 30V 2.2A UFM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.1V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 245pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 100 mOhm @ 500mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: UFM
  • Package / Case: 3-SMD, Flat Leads
package: 3-SMD, Flat Leads
Voorraad52.908
SSM3J133TU,LF
Toshiba Semiconductor and Storage

MOSFET P-CH 20V 5.5A

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 12.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 29.8 mOhm @ 3A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: UFM
  • Package / Case: 3-SMD, Flat Leads
package: 3-SMD, Flat Leads
Voorraad115.182
SSM3K35CTC,L3F
Toshiba Semiconductor and Storage

MOSFET N-CH 20V 0.18A

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.34nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 10V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 150mA, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: CST3C
  • Package / Case: SC-101, SOT-883
package: SC-101, SOT-883
Voorraad77.466
SSM6N7002CFU,LF
Toshiba Semiconductor and Storage

MOSFET 2N-CH 60V 0.17A US6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 170mA
  • Rds On (Max) @ Id, Vgs: 3.9 Ohm @ 100mA, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 10V
  • Power - Max: 285mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
package: 6-TSSOP, SC-88, SOT-363
Voorraad58.848
2SA1020-Y,F(J
Toshiba Semiconductor and Storage

TRANS PNP 2A 50V TO226-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
  • Power - Max: 900mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92MOD
package: TO-226-3, TO-92-3 Long Body
Voorraad6.832
2SA1182-Y,LF
Toshiba Semiconductor and Storage

TRANS PNP 30V 0.5A S-MINI

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
  • Power - Max: 150mW
  • Frequency - Transition: 200MHz
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: S-Mini
package: TO-236-3, SC-59, SOT-23-3
Voorraad4.256
TTA004B,Q
Toshiba Semiconductor and Storage

TRANS PNP 160V 1.5A TO126N

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1.5A
  • Voltage - Collector Emitter Breakdown (Max): 160V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V
  • Power - Max: 10W
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-225AA, TO-126-3
  • Supplier Device Package: TO-126N
package: TO-225AA, TO-126-3
Voorraad7.992
RN2107ACT(TPL3)
Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 0.1W CST3

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 80mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 100mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-101, SOT-883
  • Supplier Device Package: CST3
package: SC-101, SOT-883
Voorraad2.032
RN2113ACT(TPL3)
Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 0.1W CST3

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 80mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 47k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: -
  • Power - Max: 100mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-101, SOT-883
  • Supplier Device Package: CST3
package: SC-101, SOT-883
Voorraad80.010
ULN2803AFWG,C,EL
Toshiba Semiconductor and Storage

TRANS 8NPN DARL 50V 0.5A 18SOL

  • Transistor Type: 8 NPN Darlington
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V
  • Power - Max: 1.31W
  • Frequency - Transition: -
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 18-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 18-SOL
package: 18-SOIC (0.295", 7.50mm Width)
Voorraad4.608
HN4B01JE(TE85L,F)
Toshiba Semiconductor and Storage

TRANS NPN/PNP 50V 0.15A ESV PLN

  • Transistor Type: NPN, PNP (Emitter Coupled)
  • Current - Collector (Ic) (Max): 150mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10MA, 100MA
  • Power - Max: 100mW
  • Frequency - Transition: 80MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-553
  • Supplier Device Package: ESV
package: SOT-553
Voorraad5.712
RN1965FE(TE85L,F)
Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.1W ES6

  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 2.2k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 250MHz
  • Power - Max: 100mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6
package: SOT-563, SOT-666
Voorraad6.288
CCS15S30,L3IDTF
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 20V 1.5A CST2C

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 400mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 30V
  • Capacitance @ Vr, F: 200pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 2-SMD, No Lead
  • Supplier Device Package: CST2C
  • Operating Temperature - Junction: 125°C (Max)
package: 2-SMD, No Lead
Voorraad4.384
HN2S03FE(TE85L,F)
Toshiba Semiconductor and Storage

DIODE ARRAY SCHOTTKY 20V ES6

  • Diode Configuration: 3 Independent
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20V
  • Current - Average Rectified (Io) (per Diode): 50mA
  • Voltage - Forward (Vf) (Max) @ If: 550mV @ 50mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500nA @ 20V
  • Operating Temperature - Junction: 125°C (Max)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6
package: SOT-563, SOT-666
Voorraad6.656
hot 1SS295(TE85L,F)
Toshiba Semiconductor and Storage

DIODE ARRAY SCHOTTKY 4V SC59-3

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 4V
  • Current - Average Rectified (Io) (per Diode): 30mA
  • Voltage - Forward (Vf) (Max) @ If: 320mV @ 2mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 25µA @ 500mV
  • Operating Temperature - Junction: 125°C (Max)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SC-59-3
package: TO-236-3, SC-59, SOT-23-3
Voorraad5.808
TCR2EF40,LM(CT
Toshiba Semiconductor and Storage

IC REG LINEAR 4V 200MA SMV

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 5.5V
  • Voltage - Output (Min/Fixed): 4V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): -
  • Current - Output: 200mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): 60µA
  • PSRR: 73dB (1kHz)
  • Control Features: Enable
  • Protection Features: Over Current
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: SC-74A, SOT-753
  • Supplier Device Package: SMV
package: SC-74A, SOT-753
Voorraad58.800
TB7101AF(T5L3.3,F)
Toshiba Semiconductor and Storage

IC REG BUCK 3.3V 1A SYNC 8SON

  • Function: Step-Down
  • Output Configuration: Positive
  • Topology: Buck
  • Output Type: Fixed
  • Number of Outputs: 1
  • Voltage - Input (Min): 4.3V
  • Voltage - Input (Max): 5.5V
  • Voltage - Output (Min/Fixed): 3.3V
  • Voltage - Output (Max): -
  • Current - Output: 1A
  • Frequency - Switching: 1MHz
  • Synchronous Rectifier: Yes
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: PS-8 (2.9x2.4)
package: 8-SMD, Flat Lead
Voorraad5.712
TB62747AFG,EL
Toshiba Semiconductor and Storage

IC LED DVR 16CH CC 24SSOP

  • Type: Linear
  • Topology: Shift Register
  • Internal Switch(s): Yes
  • Number of Outputs: 16
  • Voltage - Supply (Min): 3V
  • Voltage - Supply (Max): 5.5V
  • Voltage - Output: 26V
  • Current - Output / Channel: 45mA
  • Frequency: -
  • Dimming: -
  • Applications: -
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-SOP (0.236", 6.00mm Width)
  • Supplier Device Package: 24-SSOP
package: 24-SOP (0.236", 6.00mm Width)
Voorraad4.544
hot 74VHC240FT(BE)
Toshiba Semiconductor and Storage

IC INVERTER DUAL 4-INPUT 20TSSOP

  • Logic Type: Buffer, Inverting
  • Number of Elements: 2
  • Number of Bits per Element: 4
  • Input Type: -
  • Output Type: Push-Pull
  • Current - Output High, Low: 8mA, 8mA
  • Voltage - Supply: 2 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 20-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 20-TSSOP
package: 20-TSSOP (0.173", 4.40mm Width)
Voorraad30.000
TL1L4-NW0,LCS
Toshiba Semiconductor and Storage

LED LETERAS COOL WHT 5000K 2SMD

  • Color: White, Cool
  • CCT (K): 5000K
  • Flux @ 85°C, Current - Test: 145 lm (130 lm ~ 160 lm)
  • Flux @ 25°C, Current - Test: -
  • Current - Test: 350mA
  • Voltage - Forward (Vf) (Typ): 2.8V
  • Lumens/Watt @ Current - Test: 148 lm/W
  • CRI (Color Rendering Index): 70
  • Current - Max: 1.5A
  • Viewing Angle: 120°
  • Mounting Type: Surface Mount
  • Package / Case: 1414 (3535 Metric)
  • Supplier Device Package: 3535
  • Size / Dimension: 0.138" L x 0.138" W (3.50mm x 3.50mm)
  • Height - Seated (Max): 0.085" (2.15mm)
package: 1414 (3535 Metric)
Voorraad7.398
TLP3450(TP,F
Toshiba Semiconductor and Storage

PHOTORELAY SPST-NO 200MA 20V

  • Circuit: SPST-NO (1 Form A)
  • Output Type: AC, DC
  • On-State Resistance (Max): 5 Ohm
  • Load Current: 200mA
  • Voltage - Input: 1.27VDC
  • Voltage - Load: 0 ~ 20 V
  • Mounting Type: Surface Mount
  • Termination Style: SMD (SMT) Tab
  • Package / Case: 4-SMD (0.096", 2.45mm)
  • Supplier Device Package: 4-VSON
  • Relay Type: Relay
package: 4-SMD (0.096", 2.45mm)
Voorraad25.272
TLP701(F)
Toshiba Semiconductor and Storage

OPTOISO 5KV GATE DRIVER 6SDIP GW

  • Technology: Optical Coupling
  • Number of Channels: 1
  • Voltage - Isolation: 5000Vrms
  • Common Mode Transient Immunity (Min): 10kV/µs
  • Propagation Delay tpLH / tpHL (Max): 700ns, 700ns
  • Pulse Width Distortion (Max): -
  • Rise / Fall Time (Typ): 50ns, 50ns
  • Current - Output High, Low: 400mA, 400mA
  • Current - Peak Output: 600mA
  • Voltage - Forward (Vf) (Typ): 1.55V
  • Current - DC Forward (If) (Max): 20mA
  • Voltage - Supply: 10 V ~ 30 V
  • Operating Temperature: -40°C ~ 100°C
  • Mounting Type: Surface Mount
  • Package / Case: 6-SOIC (0.268", 6.80mm Width)
  • Supplier Device Package: 6-SDIP Gull Wing
  • Approvals: cUL, UL
package: 6-SOIC (0.268", 6.80mm Width)
Voorraad3.492
hot 74HC541D
Toshiba Semiconductor and Storage

IC BUFFER NON-INVERT 6V 20SOIC

  • Logic Type: Buffer, Non-Inverting
  • Number of Elements: 1
  • Number of Bits per Element: 8
  • Input Type: -
  • Output Type: 3-State
  • Current - Output High, Low: 7.8mA, 7.8mA
  • Voltage - Supply: 2 V ~ 6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 20-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 20-SOIC
package: 20-SOIC (0.295", 7.50mm Width)
Voorraad5.504
TW107Z65C-S1F
Toshiba Semiconductor and Storage

G3 650V SIC-MOSFET TO-247-4L 10

  • FET Type: N-Channel
  • Technology: SiC (Silicon Carbide Junction Transistor)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 5V @ 1.2mA
  • Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V
  • Vgs (Max): +25V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 76W (Tc)
  • Rds On (Max) @ Id, Vgs: 152mOhm @ 10A, 18V
  • Operating Temperature: 175°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-4L(X)
  • Package / Case: TO-247-4
package: -
Voorraad270
CMS09-TE12L-Q-M
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 1A M-FLAT

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500 µA @ 30 V
  • Capacitance @ Vr, F: 70pF @ 10V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-128
  • Supplier Device Package: M-FLAT (2.4x3.8)
  • Operating Temperature - Junction: -40°C ~ 150°C
package: -
Voorraad8.928
TCR2EN15-LF-SE
Toshiba Semiconductor and Storage

LDO REG VOUT=1.5V IOUT=200MA

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 5.5V
  • Voltage - Output (Min/Fixed): 1.5V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 0.37V @ 150mA
  • Current - Output: 200mA
  • Current - Quiescent (Iq): 60 µA
  • Current - Supply (Max): -
  • PSRR: -
  • Control Features: Enable
  • Protection Features: Over Current
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 4-XFDFN Exposed Pad
  • Supplier Device Package: 4-SDFN (0.8x0.8)
package: -
Voorraad29.955
TC75S102F-LF-CT
Toshiba Semiconductor and Storage

IC CMOS 1 CIRCUIT SMV

  • Amplifier Type: CMOS
  • Number of Circuits: 1
  • Output Type: -
  • Slew Rate: -
  • Gain Bandwidth Product: 630 Hz
  • -3db Bandwidth: -
  • Current - Input Bias: 1 pA
  • Voltage - Input Offset: 100 µV
  • Current - Supply: 350nA
  • Current - Output / Channel: 11 mA
  • Voltage - Supply, Single/Dual (±): -
  • Operating Temperature: -40°C ~ 105°C
  • Mounting Type: Surface Mount
  • Package / Case: SC-74A, SOT-753
  • Supplier Device Package: SMV
package: -
Voorraad20.754
SSM3K122TU-LF
Toshiba Semiconductor and Storage

MOSFET N-CH 20V 2A UFM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 4 V
  • Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 10 V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 123mOhm @ 1A, 4V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: UFM
  • Package / Case: 3-SMD, Flat Leads
package: -
Voorraad45.015