Pagina 62 - Toshiba Semiconductor and Storage Producten | Heisener Electronics
Contacteer ons
SalesDept@heisener.com +86-755-83210559 ext. 809
Aanmelden/Registreren
Language Translation

* Please refer to the English Version as our Official Version.

BOM
kar 0

Toshiba Semiconductor and Storage Producten

Archief 4.549
Pagina  62/163
Afbeelding
Onderdeelnummer
Fabrikant
Omschrijving
package
Voorraad
Aantal
hot TPCC8065-H,LQ(S
Toshiba Semiconductor and Storage

MOSFET N-CH 30V 13A 8TSON-ADV

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 700mW (Ta), 18W (Tc)
  • Rds On (Max) @ Id, Vgs: 11.4 mOhm @ 6.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-TSON Advance (3.3x3.3)
  • Package / Case: 8-PowerVDFN
package: 8-PowerVDFN
Voorraad273.600
TK8A60W,S4VX
Toshiba Semiconductor and Storage

MOSFET N CH 600V 8A TO-220SIS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.7V @ 400µA
  • Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 300V
  • Vgs (Max): ±30V
  • FET Feature: Super Junction
  • Power Dissipation (Max): 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 500 mOhm @ 4A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
package: TO-220-3 Full Pack, Isolated Tab
Voorraad2.992
TPC8408,LQ(S
Toshiba Semiconductor and Storage

MOSFET N/P-CH 40V 6.1A/5.3A 8SOP

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 6.1A, 5.3A
  • Rds On (Max) @ Id, Vgs: 32 mOhm @ 3.1A, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 10V
  • Power - Max: 450mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad5.904
2SA1761,T6F(M
Toshiba Semiconductor and Storage

TRANS PNP 3A 50V TO226-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 75mA, 1.5A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
  • Power - Max: 900mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92MOD
package: TO-226-3, TO-92-3 Long Body
Voorraad7.424
hot RN1303(TE85L,F)
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 0.1W USM

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 22k
  • Resistor - Emitter Base (R2) (Ohms): 22k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250MHz
  • Power - Max: 100mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: USM
package: SC-70, SOT-323
Voorraad34.800
hot RN1415(TE85L,F)
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 0.2W S-MINI

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 2.2k
  • Resistor - Emitter Base (R2) (Ohms): 10k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: S-Mini
package: TO-236-3, SC-59, SOT-23-3
Voorraad103.200
HN1B04F(TE85L,F)
Toshiba Semiconductor and Storage

TRANS NPN/PNP 30V 0.5A SM6

  • Transistor Type: NPN, PNP
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V
  • Power - Max: 300mW
  • Frequency - Transition: 200MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-74, SOT-457
  • Supplier Device Package: SM6
package: SC-74, SOT-457
Voorraad5.232
RN2971FE(TE85L,F)
Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.1W ES6

  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 200MHz
  • Power - Max: 100mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6
package: SOT-563, SOT-666
Voorraad3.600
1SS405,H3F
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 20V 50MA ESC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20V
  • Current - Average Rectified (Io): 50mA
  • Voltage - Forward (Vf) (Max) @ If: 550mV @ 50mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500nA @ 20V
  • Capacitance @ Vr, F: 3.9pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-79, SOD-523
  • Supplier Device Package: ESC
  • Operating Temperature - Junction: 125°C (Max)
package: SC-79, SOD-523
Voorraad95.520
hot 1SS374(TE85L,F)
Toshiba Semiconductor and Storage

DIODE ARRAY SCHOTTKY 10V SC59

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 10V
  • Current - Average Rectified (Io) (per Diode): 100mA
  • Voltage - Forward (Vf) (Max) @ If: 500mV @ 100mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 20µA @ 10V
  • Operating Temperature - Junction: 125°C (Max)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SC-59
package: TO-236-3, SC-59, SOT-23-3
Voorraad38.400
TBD62003AFG,EL
Toshiba Semiconductor and Storage

IC LOAD SWITCH 7CH 0.5A 16SOP

  • Switch Type: General Purpose
  • Number of Outputs: 7
  • Ratio - Input:Output: 1:1
  • Output Configuration: Low Side
  • Output Type: N-Channel
  • Interface: On/Off
  • Voltage - Load: 50V (Max)
  • Voltage - Supply (Vcc/Vdd): Not Required
  • Current - Output (Max): 2.8A
  • Rds On (Typ): -
  • Input Type: Inverting
  • Features: -
  • Fault Protection: -
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Package / Case: 16-SOIC (0.173", 4.40mm Width)
  • Supplier Device Package: 16-SOP
package: 16-SOIC (0.173", 4.40mm Width)
Voorraad52.590
TB6562AFG,8,EL
Toshiba Semiconductor and Storage

IC MOTOR DRIVER PAR 30SSOP

  • Motor Type - Stepper: Bipolar
  • Motor Type - AC, DC: -
  • Function: Driver - Fully Integrated, Control and Power Stage
  • Output Configuration: Half Bridge (4)
  • Interface: Parallel
  • Technology: DMOS
  • Step Resolution: 1, 1/2, 1/4
  • Applications: General Purpose
  • Current - Output: 1.5A
  • Voltage - Supply: 10 V ~ 34 V
  • Voltage - Load: 10 V ~ 34 V
  • Operating Temperature: -20°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 30-BSOP (0.295", 7.50mm Width)
  • Supplier Device Package: 30-SSOP
package: 30-BSOP (0.295", 7.50mm Width)
Voorraad138.510
TB6612FNG,C,8,EL
Toshiba Semiconductor and Storage

IC MOTOR DRIVER PAR 24SSOP

  • Motor Type - Stepper: -
  • Motor Type - AC, DC: Brushed DC
  • Function: Driver - Fully Integrated, Control and Power Stage
  • Output Configuration: Half Bridge (4)
  • Interface: Parallel
  • Technology: Power MOSFET
  • Step Resolution: -
  • Applications: General Purpose
  • Current - Output: 1A
  • Voltage - Supply: 2.7 V ~ 5.5 V
  • Voltage - Load: 2.5 V ~ 13.5 V
  • Operating Temperature: -20°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-LSSOP (0.220", 5.60mm Width)
  • Supplier Device Package: 24-SSOP
package: 24-LSSOP (0.220", 5.60mm Width)
Voorraad238.842
hot TC74HC32AF(EL,F)
Toshiba Semiconductor and Storage

IC GATE OR 4CH 2-INP 14SOP

  • Logic Type: OR Gate
  • Number of Circuits: 4
  • Number of Inputs: 2
  • Features: -
  • Voltage - Supply: 2 V ~ 6 V
  • Current - Quiescent (Max): 1µA
  • Current - Output High, Low: 5.2mA, 5.2mA
  • Logic Level - Low: 0.5 V ~ 1.8 V
  • Logic Level - High: 1.5 V ~ 4.2 V
  • Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 14-SOP
  • Package / Case: 14-SOIC (0.209", 5.30mm Width)
package: 14-SOIC (0.209", 5.30mm Width)
Voorraad22.200
TC74VHC125FTELM
Toshiba Semiconductor and Storage

IC BUS BUFFER QUAD N-INV 14TSSOP

  • Logic Type: Buffer, Non-Inverting
  • Number of Elements: 4
  • Number of Bits per Element: 1
  • Input Type: -
  • Output Type: Push-Pull
  • Current - Output High, Low: 8mA, 8mA
  • Voltage - Supply: 2 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 14-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 14-TSSOP
package: 14-TSSOP (0.173", 4.40mm Width)
Voorraad5.328
hot TC74HC4051AF(EL,F)
Toshiba Semiconductor and Storage

IC MUX/DEMUX 8:1 100 OHM SOP16

  • Switch Circuit: -
  • Multiplexer/Demultiplexer Circuit: 8:1
  • Number of Circuits: 1
  • On-State Resistance (Max): 100 Ohm
  • Channel-to-Channel Matching (ΔRon): 5 Ohm
  • Voltage - Supply, Single (V+): 2 V ~ 6 V
  • Voltage - Supply, Dual (V±): ±2 V ~ 6 V
  • Switch Time (Ton, Toff) (Max): 18ns, 29ns
  • -3db Bandwidth: 85MHz
  • Charge Injection: -
  • Channel Capacitance (CS(off), CD(off)): 2pF, 70pF
  • Current - Leakage (IS(off)) (Max): 100nA
  • Crosstalk: -50dB @ 1MHz
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Package / Case: 16-SOIC (0.209", 5.30mm Width)
  • Supplier Device Package: 16-SOP
package: 16-SOIC (0.209", 5.30mm Width)
Voorraad22.800
TL1L4-NW1,L
Toshiba Semiconductor and Storage

LED LETERAS COOL WHT 5000K 2SMD

  • Color: White, Cool
  • CCT (K): 5000K
  • Flux @ 85°C, Current - Test: 135 lm (120 lm ~ 150 lm)
  • Flux @ 25°C, Current - Test: -
  • Current - Test: 350mA
  • Voltage - Forward (Vf) (Typ): 2.8V
  • Lumens/Watt @ Current - Test: 138 lm/W
  • CRI (Color Rendering Index): 80
  • Current - Max: 1.5A
  • Viewing Angle: 120°
  • Mounting Type: Surface Mount
  • Package / Case: 1414 (3535 Metric)
  • Supplier Device Package: 3535
  • Size / Dimension: 0.138" L x 0.138" W (3.50mm x 3.50mm)
  • Height - Seated (Max): 0.085" (2.15mm)
package: 1414 (3535 Metric)
Voorraad5.382
TL1L3-DW0,L
Toshiba Semiconductor and Storage

LED LETERAS COOL WHT 6500K 2SMD

  • Color: White, Cool
  • CCT (K): 6500K
  • Flux @ 85°C, Current - Test: -
  • Flux @ 25°C, Current - Test: 145 lm (Typ)
  • Current - Test: 350mA
  • Voltage - Forward (Vf) (Typ): 2.85V
  • Lumens/Watt @ Current - Test: 145 lm/W
  • CRI (Color Rendering Index): 70
  • Current - Max: 1A
  • Viewing Angle: 100°
  • Mounting Type: Surface Mount
  • Package / Case: 1414 (3535 Metric)
  • Supplier Device Package: 3535
  • Size / Dimension: 0.138" L x 0.138" W (3.50mm x 3.50mm)
  • Height - Seated (Max): 0.099" (2.52mm)
package: 1414 (3535 Metric)
Voorraad4.590
TLP5214(D4,E
Toshiba Semiconductor and Storage

OPTOISO 5KV GATE DRIVER 16SO

  • Technology: Optical Coupling
  • Number of Channels: 1
  • Voltage - Isolation: 5000Vrms
  • Common Mode Transient Immunity (Min): 35kV/µs
  • Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
  • Pulse Width Distortion (Max): 50ns
  • Rise / Fall Time (Typ): 32ns, 18ns
  • Current - Output High, Low: 3A, 3A
  • Current - Peak Output: 4A
  • Voltage - Forward (Vf) (Typ): 1.7V (Max)
  • Current - DC Forward (If) (Max): 25mA
  • Voltage - Supply: 15 V ~ 30 V
  • Operating Temperature: -40°C ~ 110°C
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 16-SO
  • Approvals: CQC, CSA, cUL, UL, VDE
package: 16-SOIC (0.295", 7.50mm Width)
Voorraad6.072
TLP701H(F)
Toshiba Semiconductor and Storage

OPTOISO 5KV GATE DRIVER 6SDIP GW

  • Technology: Optical Coupling
  • Number of Channels: 1
  • Voltage - Isolation: 5000Vrms
  • Common Mode Transient Immunity (Min): 20kV/µs
  • Propagation Delay tpLH / tpHL (Max): 700ns, 700ns
  • Pulse Width Distortion (Max): 500ns
  • Rise / Fall Time (Typ): 50ns, 50ns
  • Current - Output High, Low: 400mA, 400mA
  • Current - Peak Output: 600mA
  • Voltage - Forward (Vf) (Typ): 1.57V
  • Current - DC Forward (If) (Max): 25mA
  • Voltage - Supply: 10 V ~ 30 V
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Surface Mount
  • Package / Case: 6-SOIC (0.268", 6.80mm Width)
  • Supplier Device Package: 6-SDIP Gull Wing
  • Approvals: cUL, UL
package: 6-SOIC (0.268", 6.80mm Width)
Voorraad9.564
TCR3RM285A-LF-SE
Toshiba Semiconductor and Storage

LDO REG 2.85V 300MA 4DFNC

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 5.5V
  • Voltage - Output (Min/Fixed): 2.85V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 0.15V @ 300mA
  • Current - Output: 300mA
  • Current - Quiescent (Iq): 12 µA
  • Current - Supply (Max): -
  • PSRR: -
  • Control Features: Current Limit, Enable
  • Protection Features: Over Current, Over Temperature
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 4-XDFN Exposed Pad
  • Supplier Device Package: 4-DFNC (1x1)
package: -
Voorraad26.730
TK40S06N1L-LXHQ
Toshiba Semiconductor and Storage

MOSFET N-CH 60V 40A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 88.2W (Tc)
  • Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK+
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
package: -
Voorraad2.928
RN2910-LF-CT
Toshiba Semiconductor and Storage

PNPX2 BRT Q1BSR4.7KOHM Q1BERINF.

  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 4.7kOhms
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 200MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-61AA
  • Supplier Device Package: SMQ
package: -
Voorraad9.000
2SC5108-Y-LF
Toshiba Semiconductor and Storage

RF TRANS NPN 10V 6GHZ SSM

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 6GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 11dB
  • Power - Max: 100mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: SSM
package: -
Request a Quote
TCR2EN11-LF-SE
Toshiba Semiconductor and Storage

LDO REG VOUT=1.1V IOUT=200MA

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 5.5V
  • Voltage - Output (Min/Fixed): 1.1V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 0.65V @ 150mA
  • Current - Output: 200mA
  • Current - Quiescent (Iq): 60 µA
  • Current - Supply (Max): -
  • PSRR: -
  • Control Features: Enable
  • Protection Features: Over Current
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 4-XFDFN Exposed Pad
  • Supplier Device Package: 4-SDFN (0.8x0.8)
package: -
Voorraad30.000
SSM3J168F-LF
Toshiba Semiconductor and Storage

MOSFET P-CH 60V 400MA S-MINI

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 82 pF @ 10 V
  • Vgs (Max): +20V, -16V
  • FET Feature: -
  • Power Dissipation (Max): 1.2W (Ta)
  • Rds On (Max) @ Id, Vgs: 1.9Ohm @ 100mA, 4.5V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
package: -
Voorraad51.261
TPCP8J01-TE85L-F-M
Toshiba Semiconductor and Storage

MOSFET P-CH 32V 5.5A PS-8

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 32 V
  • Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1760 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.14W (Ta)
  • Rds On (Max) @ Id, Vgs: 35mOhm @ 3A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PS-8
  • Package / Case: 8-SMD, Flat Lead
package: -
Request a Quote
TC7MBL3125CFT-QCEL
Toshiba Semiconductor and Storage

PB-F CMOS BUS SWITCHES (SINGLE P

  • Type: Bus Switch
  • Circuit: 4 x 1:1
  • Independent Circuits: 1
  • Current - Output High, Low: -
  • Voltage Supply Source: Single Supply
  • Voltage - Supply: 1.65V ~ 3.6V
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Surface Mount
  • Package / Case: 14-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 14-TSSOP
package: -
Request a Quote