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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 13A 8TSON-ADV
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 700mW (Ta), 18W (Tc)
- Rds On (Max) @ Id, Vgs: 11.4 mOhm @ 6.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-TSON Advance (3.3x3.3)
- Package / Case: 8-PowerVDFN
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package: 8-PowerVDFN |
Voorraad273.600 |
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Toshiba Semiconductor and Storage |
MOSFET N CH 600V 8A TO-220SIS
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.7V @ 400µA
- Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 300V
- Vgs (Max): ±30V
- FET Feature: Super Junction
- Power Dissipation (Max): 30W (Tc)
- Rds On (Max) @ Id, Vgs: 500 mOhm @ 4A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220SIS
- Package / Case: TO-220-3 Full Pack, Isolated Tab
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package: TO-220-3 Full Pack, Isolated Tab |
Voorraad2.992 |
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Toshiba Semiconductor and Storage |
MOSFET N/P-CH 40V 6.1A/5.3A 8SOP
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 6.1A, 5.3A
- Rds On (Max) @ Id, Vgs: 32 mOhm @ 3.1A, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 10V
- Power - Max: 450mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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package: 8-SOIC (0.154", 3.90mm Width) |
Voorraad5.904 |
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Toshiba Semiconductor and Storage |
TRANS PNP 3A 50V TO226-3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 3A
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 75mA, 1.5A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
- Power - Max: 900mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: TO-92MOD
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package: TO-226-3, TO-92-3 Long Body |
Voorraad7.424 |
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Toshiba Semiconductor and Storage |
TRANS PREBIAS NPN 0.1W USM
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 22k
- Resistor - Emitter Base (R2) (Ohms): 22k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: USM
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package: SC-70, SOT-323 |
Voorraad34.800 |
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Toshiba Semiconductor and Storage |
TRANS PREBIAS NPN 0.2W S-MINI
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 2.2k
- Resistor - Emitter Base (R2) (Ohms): 10k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: S-Mini
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package: TO-236-3, SC-59, SOT-23-3 |
Voorraad103.200 |
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Toshiba Semiconductor and Storage |
TRANS NPN/PNP 30V 0.5A SM6
- Transistor Type: NPN, PNP
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 30V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V
- Power - Max: 300mW
- Frequency - Transition: 200MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-74, SOT-457
- Supplier Device Package: SM6
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package: SC-74, SOT-457 |
Voorraad5.232 |
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Toshiba Semiconductor and Storage |
TRANS 2PNP PREBIAS 0.1W ES6
- Transistor Type: 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 10k
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200MHz
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: ES6
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package: SOT-563, SOT-666 |
Voorraad3.600 |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 20V 50MA ESC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 20V
- Current - Average Rectified (Io): 50mA
- Voltage - Forward (Vf) (Max) @ If: 550mV @ 50mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500nA @ 20V
- Capacitance @ Vr, F: 3.9pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SC-79, SOD-523
- Supplier Device Package: ESC
- Operating Temperature - Junction: 125°C (Max)
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package: SC-79, SOD-523 |
Voorraad95.520 |
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Toshiba Semiconductor and Storage |
DIODE ARRAY SCHOTTKY 10V SC59
- Diode Configuration: 1 Pair Series Connection
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 10V
- Current - Average Rectified (Io) (per Diode): 100mA
- Voltage - Forward (Vf) (Max) @ If: 500mV @ 100mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 20µA @ 10V
- Operating Temperature - Junction: 125°C (Max)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SC-59
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package: TO-236-3, SC-59, SOT-23-3 |
Voorraad38.400 |
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Toshiba Semiconductor and Storage |
IC LOAD SWITCH 7CH 0.5A 16SOP
- Switch Type: General Purpose
- Number of Outputs: 7
- Ratio - Input:Output: 1:1
- Output Configuration: Low Side
- Output Type: N-Channel
- Interface: On/Off
- Voltage - Load: 50V (Max)
- Voltage - Supply (Vcc/Vdd): Not Required
- Current - Output (Max): 2.8A
- Rds On (Typ): -
- Input Type: Inverting
- Features: -
- Fault Protection: -
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: 16-SOIC (0.173", 4.40mm Width)
- Supplier Device Package: 16-SOP
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package: 16-SOIC (0.173", 4.40mm Width) |
Voorraad52.590 |
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Toshiba Semiconductor and Storage |
IC MOTOR DRIVER PAR 30SSOP
- Motor Type - Stepper: Bipolar
- Motor Type - AC, DC: -
- Function: Driver - Fully Integrated, Control and Power Stage
- Output Configuration: Half Bridge (4)
- Interface: Parallel
- Technology: DMOS
- Step Resolution: 1, 1/2, 1/4
- Applications: General Purpose
- Current - Output: 1.5A
- Voltage - Supply: 10 V ~ 34 V
- Voltage - Load: 10 V ~ 34 V
- Operating Temperature: -20°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 30-BSOP (0.295", 7.50mm Width)
- Supplier Device Package: 30-SSOP
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package: 30-BSOP (0.295", 7.50mm Width) |
Voorraad138.510 |
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Toshiba Semiconductor and Storage |
IC MOTOR DRIVER PAR 24SSOP
- Motor Type - Stepper: -
- Motor Type - AC, DC: Brushed DC
- Function: Driver - Fully Integrated, Control and Power Stage
- Output Configuration: Half Bridge (4)
- Interface: Parallel
- Technology: Power MOSFET
- Step Resolution: -
- Applications: General Purpose
- Current - Output: 1A
- Voltage - Supply: 2.7 V ~ 5.5 V
- Voltage - Load: 2.5 V ~ 13.5 V
- Operating Temperature: -20°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 24-LSSOP (0.220", 5.60mm Width)
- Supplier Device Package: 24-SSOP
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package: 24-LSSOP (0.220", 5.60mm Width) |
Voorraad238.842 |
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Toshiba Semiconductor and Storage |
IC GATE OR 4CH 2-INP 14SOP
- Logic Type: OR Gate
- Number of Circuits: 4
- Number of Inputs: 2
- Features: -
- Voltage - Supply: 2 V ~ 6 V
- Current - Quiescent (Max): 1µA
- Current - Output High, Low: 5.2mA, 5.2mA
- Logic Level - Low: 0.5 V ~ 1.8 V
- Logic Level - High: 1.5 V ~ 4.2 V
- Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Supplier Device Package: 14-SOP
- Package / Case: 14-SOIC (0.209", 5.30mm Width)
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package: 14-SOIC (0.209", 5.30mm Width) |
Voorraad22.200 |
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Toshiba Semiconductor and Storage |
IC BUS BUFFER QUAD N-INV 14TSSOP
- Logic Type: Buffer, Non-Inverting
- Number of Elements: 4
- Number of Bits per Element: 1
- Input Type: -
- Output Type: Push-Pull
- Current - Output High, Low: 8mA, 8mA
- Voltage - Supply: 2 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 14-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 14-TSSOP
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package: 14-TSSOP (0.173", 4.40mm Width) |
Voorraad5.328 |
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Toshiba Semiconductor and Storage |
IC MUX/DEMUX 8:1 100 OHM SOP16
- Switch Circuit: -
- Multiplexer/Demultiplexer Circuit: 8:1
- Number of Circuits: 1
- On-State Resistance (Max): 100 Ohm
- Channel-to-Channel Matching (ΔRon): 5 Ohm
- Voltage - Supply, Single (V+): 2 V ~ 6 V
- Voltage - Supply, Dual (V±): ±2 V ~ 6 V
- Switch Time (Ton, Toff) (Max): 18ns, 29ns
- -3db Bandwidth: 85MHz
- Charge Injection: -
- Channel Capacitance (CS(off), CD(off)): 2pF, 70pF
- Current - Leakage (IS(off)) (Max): 100nA
- Crosstalk: -50dB @ 1MHz
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: 16-SOIC (0.209", 5.30mm Width)
- Supplier Device Package: 16-SOP
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package: 16-SOIC (0.209", 5.30mm Width) |
Voorraad22.800 |
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Toshiba Semiconductor and Storage |
LED LETERAS COOL WHT 5000K 2SMD
- Color: White, Cool
- CCT (K): 5000K
- Flux @ 85°C, Current - Test: 135 lm (120 lm ~ 150 lm)
- Flux @ 25°C, Current - Test: -
- Current - Test: 350mA
- Voltage - Forward (Vf) (Typ): 2.8V
- Lumens/Watt @ Current - Test: 138 lm/W
- CRI (Color Rendering Index): 80
- Current - Max: 1.5A
- Viewing Angle: 120°
- Mounting Type: Surface Mount
- Package / Case: 1414 (3535 Metric)
- Supplier Device Package: 3535
- Size / Dimension: 0.138" L x 0.138" W (3.50mm x 3.50mm)
- Height - Seated (Max): 0.085" (2.15mm)
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package: 1414 (3535 Metric) |
Voorraad5.382 |
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Toshiba Semiconductor and Storage |
LED LETERAS COOL WHT 6500K 2SMD
- Color: White, Cool
- CCT (K): 6500K
- Flux @ 85°C, Current - Test: -
- Flux @ 25°C, Current - Test: 145 lm (Typ)
- Current - Test: 350mA
- Voltage - Forward (Vf) (Typ): 2.85V
- Lumens/Watt @ Current - Test: 145 lm/W
- CRI (Color Rendering Index): 70
- Current - Max: 1A
- Viewing Angle: 100°
- Mounting Type: Surface Mount
- Package / Case: 1414 (3535 Metric)
- Supplier Device Package: 3535
- Size / Dimension: 0.138" L x 0.138" W (3.50mm x 3.50mm)
- Height - Seated (Max): 0.099" (2.52mm)
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package: 1414 (3535 Metric) |
Voorraad4.590 |
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Toshiba Semiconductor and Storage |
OPTOISO 5KV GATE DRIVER 16SO
- Technology: Optical Coupling
- Number of Channels: 1
- Voltage - Isolation: 5000Vrms
- Common Mode Transient Immunity (Min): 35kV/µs
- Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
- Pulse Width Distortion (Max): 50ns
- Rise / Fall Time (Typ): 32ns, 18ns
- Current - Output High, Low: 3A, 3A
- Current - Peak Output: 4A
- Voltage - Forward (Vf) (Typ): 1.7V (Max)
- Current - DC Forward (If) (Max): 25mA
- Voltage - Supply: 15 V ~ 30 V
- Operating Temperature: -40°C ~ 110°C
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: 16-SO
- Approvals: CQC, CSA, cUL, UL, VDE
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package: 16-SOIC (0.295", 7.50mm Width) |
Voorraad6.072 |
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Toshiba Semiconductor and Storage |
OPTOISO 5KV GATE DRIVER 6SDIP GW
- Technology: Optical Coupling
- Number of Channels: 1
- Voltage - Isolation: 5000Vrms
- Common Mode Transient Immunity (Min): 20kV/µs
- Propagation Delay tpLH / tpHL (Max): 700ns, 700ns
- Pulse Width Distortion (Max): 500ns
- Rise / Fall Time (Typ): 50ns, 50ns
- Current - Output High, Low: 400mA, 400mA
- Current - Peak Output: 600mA
- Voltage - Forward (Vf) (Typ): 1.57V
- Current - DC Forward (If) (Max): 25mA
- Voltage - Supply: 10 V ~ 30 V
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Surface Mount
- Package / Case: 6-SOIC (0.268", 6.80mm Width)
- Supplier Device Package: 6-SDIP Gull Wing
- Approvals: cUL, UL
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package: 6-SOIC (0.268", 6.80mm Width) |
Voorraad9.564 |
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Toshiba Semiconductor and Storage |
LDO REG 2.85V 300MA 4DFNC
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 5.5V
- Voltage - Output (Min/Fixed): 2.85V
- Voltage - Output (Max): -
- Voltage Dropout (Max): 0.15V @ 300mA
- Current - Output: 300mA
- Current - Quiescent (Iq): 12 µA
- Current - Supply (Max): -
- PSRR: -
- Control Features: Current Limit, Enable
- Protection Features: Over Current, Over Temperature
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 4-XDFN Exposed Pad
- Supplier Device Package: 4-DFNC (1x1)
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package: - |
Voorraad26.730 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 40A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 10 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 88.2W (Tc)
- Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
- Operating Temperature: 175°C
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK+
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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package: - |
Voorraad2.928 |
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Toshiba Semiconductor and Storage |
PNPX2 BRT Q1BSR4.7KOHM Q1BERINF.
- Transistor Type: 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 4.7kOhms
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: SC-61AA
- Supplier Device Package: SMQ
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package: - |
Voorraad9.000 |
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Toshiba Semiconductor and Storage |
RF TRANS NPN 10V 6GHZ SSM
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 10V
- Frequency - Transition: 6GHz
- Noise Figure (dB Typ @ f): -
- Gain: 11dB
- Power - Max: 100mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
- Current - Collector (Ic) (Max): 30mA
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: SSM
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package: - |
Request a Quote |
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Toshiba Semiconductor and Storage |
LDO REG VOUT=1.1V IOUT=200MA
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 5.5V
- Voltage - Output (Min/Fixed): 1.1V
- Voltage - Output (Max): -
- Voltage Dropout (Max): 0.65V @ 150mA
- Current - Output: 200mA
- Current - Quiescent (Iq): 60 µA
- Current - Supply (Max): -
- PSRR: -
- Control Features: Enable
- Protection Features: Over Current
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 4-XFDFN Exposed Pad
- Supplier Device Package: 4-SDFN (0.8x0.8)
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package: - |
Voorraad30.000 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 60V 400MA S-MINI
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 82 pF @ 10 V
- Vgs (Max): +20V, -16V
- FET Feature: -
- Power Dissipation (Max): 1.2W (Ta)
- Rds On (Max) @ Id, Vgs: 1.9Ohm @ 100mA, 4.5V
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
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package: - |
Voorraad51.261 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 32V 5.5A PS-8
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 32 V
- Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1760 pF @ 10 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.14W (Ta)
- Rds On (Max) @ Id, Vgs: 35mOhm @ 3A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PS-8
- Package / Case: 8-SMD, Flat Lead
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package: - |
Request a Quote |
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Toshiba Semiconductor and Storage |
PB-F CMOS BUS SWITCHES (SINGLE P
- Type: Bus Switch
- Circuit: 4 x 1:1
- Independent Circuits: 1
- Current - Output High, Low: -
- Voltage Supply Source: Single Supply
- Voltage - Supply: 1.65V ~ 3.6V
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Surface Mount
- Package / Case: 14-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 14-TSSOP
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package: - |
Request a Quote |
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