Pagina 37 - Transistors - FET's, MOSFET's - Arrays | Discrete halfgeleiderproducten | Heisener Electronics
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Transistors - FET's, MOSFET's - Arrays

Archief 5.684
Pagina  37/203
Afbeelding
Onderdeelnummer
Fabrikant
Omschrijving
package
Voorraad
Aantal
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
JANTX2N7335
Microsemi Corporation

MOSFET 4P-CH 100V 0.75A MO-036AB

  • FET Type: 4 P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 750mA
  • Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.4W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 14-DIP (0.300", 7.62mm)
  • Supplier Device Package: MO-036AB
package: 14-DIP (0.300", 7.62mm)
Voorraad7.024
Standard
100V
750mA
1.4 Ohm @ 500mA, 10V
4V @ 250µA
-
-
1.4W
-55°C ~ 150°C (TJ)
Through Hole
14-DIP (0.300", 7.62mm)
MO-036AB
EMH2411R-TL-H
ON Semiconductor

MOSFET 2N-CH 30V 5A EMH8

  • FET Type: 2 N-Channel (Dual) Common Drain
  • FET Feature: Logic Level Gate, 2.5V Drive
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5A
  • Rds On (Max) @ Id, Vgs: 36.5 mOhm @ 2.5A, 4.5V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 5.9nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.4W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 8-EMH
package: 8-SMD, Flat Lead
Voorraad2.432
Logic Level Gate, 2.5V Drive
30V
5A
36.5 mOhm @ 2.5A, 4.5V
-
5.9nC @ 4.5V
-
1.4W
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
8-EMH
APTM120DU29TG
Microsemi Corporation

MOSFET 2N-CH 1200V 34A SP4

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 34A
  • Rds On (Max) @ Id, Vgs: 348 mOhm @ 17A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 374nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 25V
  • Power - Max: 780W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP4
  • Supplier Device Package: SP4
package: SP4
Voorraad2.368
Standard
1200V (1.2kV)
34A
348 mOhm @ 17A, 10V
5V @ 5mA
374nC @ 10V
10300pF @ 25V
780W
-40°C ~ 150°C (TJ)
Chassis Mount
SP4
SP4
hot SI9933BDY-T1-E3
Vishay Siliconix

MOSFET 2P-CH 20V 3.6A 8-SOIC

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.6A
  • Rds On (Max) @ Id, Vgs: 60 mOhm @ 4.7A, 4.5V
  • Vgs(th) (Max) @ Id: 1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad747.996
Logic Level Gate
20V
3.6A
60 mOhm @ 4.7A, 4.5V
1.4V @ 250µA
9nC @ 4.5V
-
1.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot SI9955DY
Fairchild/ON Semiconductor

MOSFET 2N-CH 50V 3A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 3A
  • Rds On (Max) @ Id, Vgs: 130 mOhm @ 3A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 345pF @ 15V
  • Power - Max: 900mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad156.372
Standard
50V
3A
130 mOhm @ 3A, 10V
1V @ 250µA
30nC @ 10V
345pF @ 15V
900mW
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
BSL308PEH6327XTSA1
Infineon Technologies

MOSFET 2P-CH 30V 2A 6TSOP

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate, 4.5V Drive
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2A
  • Rds On (Max) @ Id, Vgs: 80 mOhm @ 2A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 11µA
  • Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V
  • Power - Max: 500mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: PG-TSOP6-6
package: SOT-23-6 Thin, TSOT-23-6
Voorraad5.952
Logic Level Gate, 4.5V Drive
30V
2A
80 mOhm @ 2A, 10V
1V @ 11µA
5nC @ 10V
500pF @ 15V
500mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
PG-TSOP6-6
APTM50AM24SCG
Microsemi Corporation

MOSFET 2N-CH 500V 150A SP6

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Silicon Carbide (SiC)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 150A
  • Rds On (Max) @ Id, Vgs: 28 mOhm @ 75A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 6mA
  • Gate Charge (Qg) (Max) @ Vgs: 434nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 19600pF @ 25V
  • Power - Max: 1250W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP6
  • Supplier Device Package: SP6
package: SP6
Voorraad3.120
Silicon Carbide (SiC)
500V
150A
28 mOhm @ 75A, 10V
5V @ 6mA
434nC @ 10V
19600pF @ 25V
1250W
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6
APTM100H45FT3G
Microsemi Corporation

MOSFET 4N-CH 1000V 18A SP3

  • FET Type: 4 N-Channel (H-Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 1000V (1kV)
  • Current - Continuous Drain (Id) @ 25°C: 18A
  • Rds On (Max) @ Id, Vgs: 540 mOhm @ 9A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 154nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4350pF @ 25V
  • Power - Max: 357W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP3
  • Supplier Device Package: SP3
package: SP3
Voorraad5.568
Standard
1000V (1kV)
18A
540 mOhm @ 9A, 10V
5V @ 2.5mA
154nC @ 10V
4350pF @ 25V
357W
-40°C ~ 150°C (TJ)
Chassis Mount
SP3
SP3
VMM85-02F
IXYS

MOSFET 2N-CH 200V 84A Y4

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 84A
  • Rds On (Max) @ Id, Vgs: 25 mOhm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 4V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs: 450nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 15000pF @ 25V
  • Power - Max: 370W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Y4
  • Supplier Device Package: Y4
package: Y4
Voorraad2.624
Standard
200V
84A
25 mOhm @ 500mA, 10V
4V @ 8mA
450nC @ 10V
15000pF @ 25V
370W
-40°C ~ 150°C (TJ)
Chassis Mount
Y4
Y4
EFC6605R-V-TR
ON Semiconductor

MOSFET N-CH DUAL 10A 24V 6XFLGA

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
Voorraad5.840
-
-
-
-
-
-
-
-
-
-
-
-
DMTH6016LSD-13
Diodes Incorporated

MOSFET BVDSS: 41V 60V SO-8

  • FET Type: 2 N-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta)
  • Rds On (Max) @ Id, Vgs: 19.5 mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 864pF @ 30V
  • Power - Max: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad3.376
Standard
-
7.6A (Ta)
19.5 mOhm @ 10A, 10V
2.5V @ 250µA
17nC @ 10V
864pF @ 30V
-
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
FW389-TL-2W
ON Semiconductor

MOSFET N/P-CH 100V 2A 8SOIC

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate, 4V Drive
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 2A
  • Rds On (Max) @ Id, Vgs: 225 mOhm @ 2A, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 10V
  • Power - Max: 1.8W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad6.608
Logic Level Gate, 4V Drive
100V
2A
225 mOhm @ 2A, 10V
-
10nC @ 10V
490pF @ 10V
1.8W
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
DMN4031SSDQ-13
Diodes Incorporated

MOSFET 2N-CH 40V 5.2A 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 5.2A
  • Rds On (Max) @ Id, Vgs: 31 mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 945pF @ 20V
  • Power - Max: 1.42W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad3.440
Standard
40V
5.2A
31 mOhm @ 6A, 10V
3V @ 250µA
18.6nC @ 10V
945pF @ 20V
1.42W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot AON4803
Alpha & Omega Semiconductor Inc.

MOSFET 2P-CH 20V 3.4A DFN3X2

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.4A
  • Rds On (Max) @ Id, Vgs: 90 mOhm @ 3.4A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 745pF @ 10V
  • Power - Max: 1.7W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 8-DFN (3x2)
package: 8-SMD, Flat Lead
Voorraad195.504
Logic Level Gate
20V
3.4A
90 mOhm @ 3.4A, 4.5V
1V @ 250µA
8nC @ 4.5V
745pF @ 10V
1.7W
-55°C ~ 150°C (TJ)
Surface Mount
8-SMD, Flat Lead
8-DFN (3x2)
DMN61D8LVTQ-13
Diodes Incorporated

MOSFET 2N-CH 60V 0.63A TSOT26

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 630mA
  • Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 150mA, 5V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 12.9pF @ 12V
  • Power - Max: 820mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: TSOT-26
package: SOT-23-6 Thin, TSOT-23-6
Voorraad3.360
Logic Level Gate
60V
630mA
1.8 Ohm @ 150mA, 5V
2V @ 1mA
0.74nC @ 5V
12.9pF @ 12V
820mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
TSOT-26
DI9952T
Diodes Incorporated

MOSFET N/P-CH 30V 2.9A 8-SOIC

  • FET Type: N and P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2.9A
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 2W
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad4.512
Standard
30V
2.9A
-
-
-
-
2W
-
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
hot IRFI4212H-117P
Infineon Technologies

MOSFET 2N-CH 100V 11A TO-220FP-5

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 11A
  • Rds On (Max) @ Id, Vgs: 72.5 mOhm @ 6.6A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 50V
  • Power - Max: 18W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-5 Full Pack
  • Supplier Device Package: TO-220-5 Full-Pak
package: TO-220-5 Full Pack
Voorraad282.516
Standard
100V
11A
72.5 mOhm @ 6.6A, 10V
5V @ 250µA
18nC @ 10V
490pF @ 50V
18W
-55°C ~ 150°C (TJ)
Through Hole
TO-220-5 Full Pack
TO-220-5 Full-Pak
ALD1106PBL
Advanced Linear Devices Inc.

MOSFET 4N-CH 10.6V 14DIP

  • FET Type: 4 N-Channel, Matched Pair
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 10.6V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 500 Ohm @ 5V
  • Vgs(th) (Max) @ Id: 1V @ 1µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V
  • Power - Max: 500mW
  • Operating Temperature: 0°C ~ 70°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 14-DIP (0.300", 7.62mm)
  • Supplier Device Package: 14-PDIP
package: 14-DIP (0.300", 7.62mm)
Voorraad20.472
Standard
10.6V
-
500 Ohm @ 5V
1V @ 1µA
-
3pF @ 5V
500mW
0°C ~ 70°C (TJ)
Through Hole
14-DIP (0.300", 7.62mm)
14-PDIP
FDPC4044
Fairchild/ON Semiconductor

MOSFET 2N-CH 8MLP

  • FET Type: 2 N-Channel (Dual) Common Drain
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 27A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3215pF @ 15V
  • Power - Max: 1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerWDFN
  • Supplier Device Package: Powerclip-33
package: 8-PowerWDFN
Voorraad5.904
Logic Level Gate
-
-
4.3 mOhm @ 27A, 10V
3V @ 250µA
49nC @ 10V
3215pF @ 15V
1W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerWDFN
Powerclip-33
BSL215CH6327XTSA1
Infineon Technologies

MOSFET N/P-CH 20V 1.5A TSOP-6

  • FET Type: N and P-Channel Complementary
  • FET Feature: Logic Level Gate, 2.5V Drive
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.5A
  • Rds On (Max) @ Id, Vgs: 140 mOhm @ 1.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 3.7µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.73nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 10V
  • Power - Max: 500mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: PG-TSOP6-6
package: SOT-23-6 Thin, TSOT-23-6
Voorraad26.778
Logic Level Gate, 2.5V Drive
20V
1.5A
140 mOhm @ 1.5A, 4.5V
1.2V @ 3.7µA
0.73nC @ 4.5V
143pF @ 10V
500mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
PG-TSOP6-6
DMHC3025LSD-13
Diodes Incorporated

MOSFET 2N/2P-CH 30V 8SO

  • FET Type: 2 N and 2 P-Channel (H-Bridge)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6A, 4.2A
  • Rds On (Max) @ Id, Vgs: 25 mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11.7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 15V
  • Power - Max: 1.5W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad59.394
Logic Level Gate
30V
6A, 4.2A
25 mOhm @ 5A, 10V
2V @ 250µA
11.7nC @ 10V
590pF @ 15V
1.5W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
FDML7610AS
Fairchild Semiconductor

MOSFET N-CH

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
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-
-
-
-
-
-
-
-
-
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MSCSM170DUM23T3AG
Microchip Technology

SIC 2N-CH 1700V 124A SP3F

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1700V (1.7kV)
  • Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
  • Rds On (Max) @ Id, Vgs: 22.5mOhm @ 60A, 20V
  • Vgs(th) (Max) @ Id: 3.2V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 356nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 1000V
  • Power - Max: 602W (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: SP3F
package: -
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-
1700V (1.7kV)
124A (Tc)
22.5mOhm @ 60A, 20V
3.2V @ 5mA
356nC @ 20V
6600pF @ 1000V
602W (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
SP3F
SI6562DQ-T1-GE3
Vishay Siliconix

MOSFET N/P-CH 20V 8-TSSOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V
  • Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1W
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
package: -
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Logic Level Gate
20V
-
30mOhm @ 4.5A, 4.5V
600mV @ 250µA (Min)
25nC @ 4.5V
-
1W
-
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
IPG20N06S2L65AAUMA1
Infineon Technologies

MOSFET 2N-CH 55V 20A 8TDSON

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Rds On (Max) @ Id, Vgs: 65mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 14µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 25V
  • Power - Max: 43W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PG-TDSON-8-10
package: -
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Logic Level Gate
55V
20A (Tc)
65mOhm @ 15A, 10V
2V @ 14µA
12nC @ 10V
410pF @ 25V
43W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount, Wettable Flank
8-PowerVDFN
PG-TDSON-8-10
SQUN702E-T1_GE3
Vishay Siliconix

MOSFET N/P-CH 40V/200V 30A DIE

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V, 200V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc), 20A (Tc)
  • Rds On (Max) @ Id, Vgs: 9.2mOhm @ 9.8A, 10V, 60mOhm @ 5A, 10V, 30mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA, 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 23nC @ 20V, 14nC @ 20V, 30.2nC @ 100V
  • Input Capacitance (Ciss) (Max) @ Vds: 1474pF @ 20V, 1450pF @ 20V, 1302pF @ 100V
  • Power - Max: 48W (Tc), 60W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Package / Case: Die
  • Supplier Device Package: Die
package: -
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-
40V, 200V
30A (Tc), 20A (Tc)
9.2mOhm @ 9.8A, 10V, 60mOhm @ 5A, 10V, 30mOhm @ 6A, 10V
2.5V @ 250µA, 3.5V @ 250µA
23nC @ 20V, 14nC @ 20V, 30.2nC @ 100V
1474pF @ 20V, 1450pF @ 20V, 1302pF @ 100V
48W (Tc), 60W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount, Wettable Flank
Die
Die
AUIRFN8458TRXTMA1
Infineon Technologies

MOSFET 2N-CH 40V 43A 8PQFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
  • Rds On (Max) @ Id, Vgs: 10mOhm @ 26A, 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V
  • Power - Max: 34W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-PQFN (5x6)
package: -
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-
40V
43A (Tc)
10mOhm @ 26A, 10V
3.9V @ 25µA
33nC @ 10V
2250pF @ 25V
34W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerTDFN
8-PQFN (5x6)
PJQ5948V-AU_R2_002A1
Panjit International Inc.

MOSFET 2N-CH 40V 10.5A 8DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 35A (Tc)
  • Rds On (Max) @ Id, Vgs: 13.4mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 673pF @ 25V
  • Power - Max: 2.4W (Ta), 32W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: DFN5060B-8
package: -
Voorraad9.000
-
40V
10.5A (Ta), 35A (Tc)
13.4mOhm @ 10A, 10V
3.5V @ 50µA
9.5nC @ 10V
673pF @ 25V
2.4W (Ta), 32W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerTDFN
DFN5060B-8