Pagina 35 - Transistors - FET's, MOSFET's - Arrays | Discrete halfgeleiderproducten | Heisener Electronics
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Transistors - FET's, MOSFET's - Arrays

Archief 5.684
Pagina  35/203
Afbeelding
Onderdeelnummer
Fabrikant
Omschrijving
package
Voorraad
Aantal
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
hot IRF8910GTRPBF
Infineon Technologies

MOSFET 2N-CH 20V 10A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 10A
  • Rds On (Max) @ Id, Vgs: 13.4 mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.55V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 10V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad564.096
Logic Level Gate
20V
10A
13.4 mOhm @ 10A, 10V
2.55V @ 250µA
11nC @ 4.5V
960pF @ 10V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
IRF9953PBF
Infineon Technologies

MOSFET 2P-CH 30V 2.3A 8-SOIC

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2.3A
  • Rds On (Max) @ Id, Vgs: 250 mOhm @ 1A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad4.320
Standard
30V
2.3A
250 mOhm @ 1A, 10V
1V @ 250µA
12nC @ 10V
190pF @ 15V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
AON6928
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 17A/30A 8DFN

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 17A, 30A
  • Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 15V
  • Power - Max: 3.6W, 4.3W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: 8-DFN (5x6)
package: 8-PowerVDFN
Voorraad4.192
Logic Level Gate
30V
17A, 30A
8.2 mOhm @ 20A, 10V
2.5V @ 250µA
24nC @ 10V
1150pF @ 15V
3.6W, 4.3W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerVDFN
8-DFN (5x6)
SI7904DN-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 20V 5.3A 1212-8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5.3A
  • Rds On (Max) @ Id, Vgs: 30 mOhm @ 7.7A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 935µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.3W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? 1212-8 Dual
  • Supplier Device Package: PowerPAK? 1212-8 Dual
package: PowerPAK? 1212-8 Dual
Voorraad5.088
Logic Level Gate
20V
5.3A
30 mOhm @ 7.7A, 4.5V
1V @ 935µA
15nC @ 4.5V
-
1.3W
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? 1212-8 Dual
PowerPAK? 1212-8 Dual
hot NTLJD4116NT1G
ON Semiconductor

MOSFET 2N-CH 30V 2.5A 6-WDFN

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A
  • Rds On (Max) @ Id, Vgs: 70 mOhm @ 2A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 427pF @ 15V
  • Power - Max: 710mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-WDFN Exposed Pad
  • Supplier Device Package: 6-WDFN (2x2)
package: 6-WDFN Exposed Pad
Voorraad609.576
Logic Level Gate
30V
2.5A
70 mOhm @ 2A, 4.5V
1V @ 250µA
6.5nC @ 4.5V
427pF @ 15V
710mW
-55°C ~ 150°C (TJ)
Surface Mount
6-WDFN Exposed Pad
6-WDFN (2x2)
NTJD2152PT2
ON Semiconductor

MOSFET 2P-CH 8V 0.775A SOT-363

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 8V
  • Current - Continuous Drain (Id) @ 25°C: 775mA
  • Rds On (Max) @ Id, Vgs: 300 mOhm @ 570mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 8V
  • Power - Max: 270mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-88/SC70-6/SOT-363
package: 6-TSSOP, SC-88, SOT-363
Voorraad5.632
Logic Level Gate
8V
775mA
300 mOhm @ 570mA, 4.5V
1V @ 250µA
4nC @ 4.5V
225pF @ 8V
270mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-88/SC70-6/SOT-363
NTHC5513T1
ON Semiconductor

MOSFET N/P-CH 20V CHIPFET

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.2A
  • Rds On (Max) @ Id, Vgs: 80 mOhm @ 2.9A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 10V
  • Power - Max: 1.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: ChipFET?
package: 8-SMD, Flat Lead
Voorraad2.160
Logic Level Gate
20V
2.9A, 2.2A
80 mOhm @ 2.9A, 4.5V
1.2V @ 250µA
4nC @ 4.5V
180pF @ 10V
1.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-SMD, Flat Lead
ChipFET?
APTM20TAM16FPG
Microsemi Corporation

MOSFET 6N-CH 200V 104A SP6-P

  • FET Type: 6 N-Channel (3-Phase Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 104A
  • Rds On (Max) @ Id, Vgs: 19 mOhm @ 52A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7220pF @ 25V
  • Power - Max: 390W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP6
  • Supplier Device Package: SP6-P
package: SP6
Voorraad4.448
Standard
200V
104A
19 mOhm @ 52A, 10V
5V @ 2.5mA
140nC @ 10V
7220pF @ 25V
390W
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6-P
FMM22-06PF
IXYS

MOSFET 2N-CH 600V 12A I4-PAC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 12A
  • Rds On (Max) @ Id, Vgs: 350 mOhm @ 11A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V
  • Power - Max: 130W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: i4-Pac?-5
  • Supplier Device Package: ISOPLUS i4-PAC?
package: i4-Pac?-5
Voorraad7.632
Standard
600V
12A
350 mOhm @ 11A, 10V
5V @ 1mA
58nC @ 10V
3600pF @ 25V
130W
-55°C ~ 150°C (TJ)
Through Hole
i4-Pac?-5
ISOPLUS i4-PAC?
SI7962DP-T1-E3
Vishay Siliconix

MOSFET 2N-CH 40V 7.1A PPAK SO-8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 7.1A
  • Rds On (Max) @ Id, Vgs: 17 mOhm @ 11.1A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.4W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? SO-8 Dual
  • Supplier Device Package: PowerPAK? SO-8 Dual
package: PowerPAK? SO-8 Dual
Voorraad4.640
Standard
40V
7.1A
17 mOhm @ 11.1A, 10V
4.5V @ 250µA
70nC @ 10V
-
1.4W
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SO-8 Dual
PowerPAK? SO-8 Dual
NVMFD5483NLT1G
ON Semiconductor

MOSFET 2N-CH 60V 6.4A 8DFN

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 6.4A
  • Rds On (Max) @ Id, Vgs: 36 mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 23.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 668pF @ 25V
  • Power - Max: 3.1W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
package: 8-PowerTDFN
Voorraad3.296
Logic Level Gate
60V
6.4A
36 mOhm @ 15A, 10V
2.5V @ 250µA
23.4nC @ 10V
668pF @ 25V
3.1W
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerTDFN
8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
QS8K21TR
Rohm Semiconductor

MOSFET 2N-CH 45V 4A TSMT8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 45V
  • Current - Continuous Drain (Id) @ 25°C: 4A
  • Rds On (Max) @ Id, Vgs: 53 mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 5.4nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 10V
  • Power - Max: 550mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: TSMT8
package: 8-SMD, Flat Lead
Voorraad4.608
Logic Level Gate
45V
4A
53 mOhm @ 4A, 10V
2.5V @ 1mA
5.4nC @ 5V
460pF @ 10V
550mW
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
TSMT8
hot AO4806
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 20V 9.4A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 14 mOhm @ 9.4A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17.9nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1810pF @ 10V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad913.668
Logic Level Gate
20V
-
14 mOhm @ 9.4A, 10V
1V @ 250µA
17.9nC @ 4.5V
1810pF @ 10V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
TSM680P06DPQ56 RLG
TSC America Inc.

MOSFET, DUAL, P-CHANNEL, -60V, -

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Rds On (Max) @ Id, Vgs: 68 mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 30V
  • Power - Max: 3.5W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-PDFN (5x6)
package: 8-PowerTDFN
Voorraad6.640
Standard
60V
12A (Tc)
68 mOhm @ 6A, 10V
2.5V @ 250µA
16.4nC @ 10V
870pF @ 30V
3.5W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerTDFN
8-PDFN (5x6)
hot TT8J21TR
Rohm Semiconductor

MOSFET 2P-CH 20V 2.5A TSST8

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A
  • Rds On (Max) @ Id, Vgs: 68 mOhm @ 2.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1270pF @ 10V
  • Power - Max: 650mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 8-TSST
package: 8-SMD, Flat Lead
Voorraad730.380
Logic Level Gate
20V
2.5A
68 mOhm @ 2.5A, 4.5V
1V @ 1mA
12nC @ 4.5V
1270pF @ 10V
650mW
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
8-TSST
hot NTHD4502NT1G
ON Semiconductor

MOSFET 2N-CH 30V 2.2A CHIPFET

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2.2A
  • Rds On (Max) @ Id, Vgs: 85 mOhm @ 2.9A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 15V
  • Power - Max: 640mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: ChipFET?
package: 8-SMD, Flat Lead
Voorraad409.524
Logic Level Gate
30V
2.2A
85 mOhm @ 2.9A, 10V
3V @ 250µA
7nC @ 10V
140pF @ 15V
640mW
-55°C ~ 150°C (TJ)
Surface Mount
8-SMD, Flat Lead
ChipFET?
hot PMGD290UCEAX
Nexperia USA Inc.

MOSFET N/P-CH 20V 6TSSOP

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 725mA, 500mA
  • Rds On (Max) @ Id, Vgs: 380 mOhm @ 500mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.68nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 83pF @ 10V
  • Power - Max: 280mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: 6-TSSOP
package: 6-TSSOP, SC-88, SOT-363
Voorraad43.200
Logic Level Gate
20V
725mA, 500mA
380 mOhm @ 500mA, 4.5V
1.3V @ 250µA
0.68nC @ 4.5V
83pF @ 10V
280mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
6-TSSOP
KFCAB21490L
Nuvoton Technology Corporation

DUAL NCH MOSFET 12V, 13.5A, 2.2M

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 2.75mOhm @ 6A, 4.5V
  • Vgs(th) (Max) @ Id: 1.4V @ 1.11mA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4V
  • Input Capacitance (Ciss) (Max) @ Vds: 3570pF @ 10V
  • Power - Max: 540mW (Ta)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 10-SMD, No Lead
  • Supplier Device Package: 10-SMD
package: -
Request a Quote
-
12V
13.5A (Ta)
2.75mOhm @ 6A, 4.5V
1.4V @ 1.11mA
25nC @ 4V
3570pF @ 10V
540mW (Ta)
150°C
Surface Mount
10-SMD, No Lead
10-SMD
MCMNP2065-TP
Micro Commercial Co

MOSFET N/P-CH 20V 6A 6DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
  • Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 4.5V, 42mOhm @ 5A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.05nC @ 4.5V, 10.98nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 418pF @ 10V, 1010pF @ 10V
  • Power - Max: 2.2W, 1.8W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-VDFN Exposed Pad
  • Supplier Device Package: DFN2020-6L
package: -
Voorraad5.148
-
20V
6A (Ta)
25mOhm @ 5A, 4.5V, 42mOhm @ 5A, 4.5V
1V @ 250µA
6.05nC @ 4.5V, 10.98nC @ 4.5V
418pF @ 10V, 1010pF @ 10V
2.2W, 1.8W
-55°C ~ 150°C (TJ)
Surface Mount
6-VDFN Exposed Pad
DFN2020-6L
DMT3009UDT-7
Diodes Incorporated

MOSFET 2N-CH 30V 10.6A 8VDFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 30A (Tc)
  • Rds On (Max) @ Id, Vgs: 11.1mOhm @ 11A, 10V
  • Vgs(th) (Max) @ Id: 1.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 894pF @ 15V
  • Power - Max: 1.1W (Ta), 16W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-VDFN Exposed Pad
  • Supplier Device Package: V-DFN3030-8 (Type KS)
package: -
Request a Quote
-
30V
10.6A (Ta), 30A (Tc)
11.1mOhm @ 11A, 10V
1.8V @ 250µA
14.6nC @ 10V
894pF @ 15V
1.1W (Ta), 16W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-VDFN Exposed Pad
V-DFN3030-8 (Type KS)
ECH8667-TL-HX-SA
Sanyo

MOSFET P-CH

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
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BSS138DW-7-F-79
Diodes Incorporated

MOSFET 2N-CH 50V 0.2A SOT363

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
  • Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
  • Power - Max: 200mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
package: -
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50V
200mA (Ta)
3.5Ohm @ 220mA, 10V
1.5V @ 250µA
-
50pF @ 10V
200mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
DMP31D7LDW-7
Diodes Incorporated

MOSFET 2P-CH 0.55A SOT363

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: 550mA (Ta)
  • Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V
  • Vgs(th) (Max) @ Id: 2.6V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
package: -
Voorraad8.541
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550mA (Ta)
900mOhm @ 420mA, 10V
2.6V @ 250µA
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-
-
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
CAB425M12XM3
Wolfspeed, Inc.

SIC 2N-CH 1200V 450A

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 450A
  • Rds On (Max) @ Id, Vgs: 4.2mOhm @ 425A, 15V
  • Vgs(th) (Max) @ Id: 3.6V @ 115mA
  • Gate Charge (Qg) (Max) @ Vgs: 1135nC @ 15V
  • Input Capacitance (Ciss) (Max) @ Vds: 30.7nF @ 800V
  • Power - Max: -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
package: -
Voorraad9
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1200V (1.2kV)
450A
4.2mOhm @ 425A, 15V
3.6V @ 115mA
1135nC @ 15V
30.7nF @ 800V
-
-40°C ~ 175°C (TJ)
Chassis Mount
Module
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US6J12TCR
Rohm Semiconductor

MOSFET 2P-CH 12V 2A TUMT6

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Rds On (Max) @ Id, Vgs: 105mOhm @ 2A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 7.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 6V
  • Power - Max: 910mW (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, Flat Leads
  • Supplier Device Package: TUMT6
package: -
Voorraad8.700
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12V
2A (Ta)
105mOhm @ 2A, 4.5V
1V @ 1mA
7.6nC @ 4.5V
850pF @ 6V
910mW (Ta)
150°C (TJ)
Surface Mount
6-SMD, Flat Leads
TUMT6
SI6562DQ-T1-E3
Vishay Siliconix

MOSFET N/P-CH 20V 8-TSSOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V
  • Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1W
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
package: -
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Logic Level Gate
20V
-
30mOhm @ 4.5A, 4.5V
600mV @ 250µA (Min)
25nC @ 4.5V
-
1W
-
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
SI7501DN-T1-E3
Vishay Siliconix

MOSFET N/P-CH 30V 5.4A 1212-8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5.4A, 4.5A
  • Rds On (Max) @ Id, Vgs: 35mOhm @ 7.7A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.6W
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® 1212-8 Dual
  • Supplier Device Package: PowerPAK® 1212-8 Dual
package: -
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Logic Level Gate
30V
5.4A, 4.5A
35mOhm @ 7.7A, 10V
3V @ 250µA
14nC @ 10V
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1.6W
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Surface Mount
PowerPAK® 1212-8 Dual
PowerPAK® 1212-8 Dual
NVMFD016N06CT1G
onsemi

MOSFET 2N-CH 60V 9A/32A 8DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 32A (Tc)
  • Rds On (Max) @ Id, Vgs: 16.3mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 489pF @ 30V
  • Power - Max: 3.1W (Ta), 36W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
package: -
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60V
9A (Ta), 32A (Tc)
16.3mOhm @ 5A, 10V
4V @ 25µA
6.9nC @ 10V
489pF @ 30V
3.1W (Ta), 36W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerTDFN
8-DFN (5x6) Dual Flag (SO8FL-Dual)