Pagina 36 - Transistors - FET's, MOSFET's - Arrays | Discrete halfgeleiderproducten

Onderdeelnummer	Fabrikant	Omschrijving	package	Voorraad	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IRF5851TRPBF	Infineon Technologies	MOSFET N/P-CH 20V 2.7A 6-TSOP FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.7A, 2.2A Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.7A, 4.5V Vgs(th) (Max) @ Id: 1.25V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V Power - Max: 960mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-TSOP	package: SOT-23-6 Thin, TSOT-23-6	Voorraad463.020	Logic Level Gate	20V	2.7A, 2.2A	90 mOhm @ 2.7A, 4.5V	1.25V @ 250µA	6nC @ 4.5V	400pF @ 15V	960mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	6-TSOP
IRF7754TR	Infineon Technologies	MOSFET 2P-CH 12V 5.5A 8-TSSOP FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 5.5A Rds On (Max) @ Id, Vgs: 25 mOhm @ 5.4A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1984pF @ 6V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	package: 8-TSSOP (0.173", 4.40mm Width)	Voorraad7.680	Logic Level Gate	12V	5.5A	25 mOhm @ 5.4A, 4.5V	900mV @ 250µA	22nC @ 4.5V	1984pF @ 6V	1W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
PMDPB38UNE,115	NXP	MOSFET 2N-CH 20V 4A HUSON6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A Rds On (Max) @ Id, Vgs: 46 mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 268pF @ 10V Power - Max: 510mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: DFN2020-6	package: 6-UDFN Exposed Pad	Voorraad2.064	Logic Level Gate	20V	4A	46 mOhm @ 3A, 4.5V	1V @ 250µA	4.4nC @ 4.5V	268pF @ 10V	510mW	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	DFN2020-6
SI4913DY-T1-GE3	Vishay Siliconix	MOSFET 2P-CH 20V 7.1A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7.1A Rds On (Max) @ Id, Vgs: 15 mOhm @ 9.4A, 4.5V Vgs(th) (Max) @ Id: 1V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	package: 8-SOIC (0.154", 3.90mm Width)	Voorraad57.828	Logic Level Gate	20V	7.1A	15 mOhm @ 9.4A, 4.5V	1V @ 500µA	65nC @ 4.5V	-	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SI4561DY-T1-GE3	Vishay Siliconix	MOSFET N/P-CH 40V 6.8A 8-SOIC FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 6.8A, 7.2A Rds On (Max) @ Id, Vgs: 35.5 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 20V Power - Max: 3W, 3.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	package: 8-SOIC (0.154", 3.90mm Width)	Voorraad27.960	Logic Level Gate	40V	6.8A, 7.2A	35.5 mOhm @ 5A, 10V	3V @ 250µA	20nC @ 10V	640pF @ 20V	3W, 3.3W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
MMDF2N02ER2G	ON Semiconductor	MOSFET 2N-CH 25V 3.6A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 3.6A Rds On (Max) @ Id, Vgs: 100 mOhm @ 2.2A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 532pF @ 16V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	package: 8-SOIC (0.154", 3.90mm Width)	Voorraad144.060	Logic Level Gate	25V	3.6A	100 mOhm @ 2.2A, 10V	3V @ 250µA	30nC @ 10V	532pF @ 16V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
FDC6020C	Fairchild/ON Semiconductor	MOSFET N/P-CH 20V 6SSOT FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.9A, 4.2A Rds On (Max) @ Id, Vgs: 27 mOhm @ 5.9A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 677pF @ 10V Power - Max: 1.2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SSOT Flat-lead, SuperSOT?-6 FLMP Supplier Device Package: SuperSOT?-6 FLMP	package: 6-SSOT Flat-lead, SuperSOT?-6 FLMP	Voorraad19.308	Logic Level Gate	20V	5.9A, 4.2A	27 mOhm @ 5.9A, 4.5V	1.5V @ 250µA	8nC @ 4.5V	677pF @ 10V	1.2W	-55°C ~ 150°C (TJ)	Surface Mount	6-SSOT Flat-lead, SuperSOT?-6 FLMP	SuperSOT?-6 FLMP
APTM100AM90FG	Microsemi Corporation	MOSFET 2N-CH 1000V 78A SP6 FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 1000V (1kV) Current - Continuous Drain (Id) @ 25°C: 78A Rds On (Max) @ Id, Vgs: 105 mOhm @ 39A, 10V Vgs(th) (Max) @ Id: 5V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 744nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 20700pF @ 25V Power - Max: 1250W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6	package: SP6	Voorraad5.520	Standard	1000V (1kV)	78A	105 mOhm @ 39A, 10V	5V @ 10mA	744nC @ 10V	20700pF @ 25V	1250W	-40°C ~ 150°C (TJ)	Chassis Mount	SP6	SP6
APTM100A40FT1G	Microsemi Corporation	MOSFET 2N-CH 1000V 21A SP1 FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 1000V (1kV) Current - Continuous Drain (Id) @ 25°C: 21A Rds On (Max) @ Id, Vgs: 480 mOhm @ 18A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 305nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7868pF @ 25V Power - Max: 390W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP1 Supplier Device Package: SP1	package: SP1	Voorraad7.856	Standard	1000V (1kV)	21A	480 mOhm @ 18A, 10V	5V @ 2.5mA	305nC @ 10V	7868pF @ 25V	390W	-40°C ~ 150°C (TJ)	Chassis Mount	SP1	SP1
APTC80DDA15T3G	Microsemi Corporation	MOSFET 2N-CH 800V 28A SP3 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 28A Rds On (Max) @ Id, Vgs: 150 mOhm @ 14A, 10V Vgs(th) (Max) @ Id: 3.9V @ 2mA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V Power - Max: 277W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3	package: SP3	Voorraad6.752	Standard	800V	28A	150 mOhm @ 14A, 10V	3.9V @ 2mA	180nC @ 10V	4507pF @ 25V	277W	-40°C ~ 150°C (TJ)	Chassis Mount	SP3	SP3
AON6932	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 30V 22A/36A 8DFN FET Type: 2 N-Channel (Half Bridge) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 22A, 36A Rds On (Max) @ Id, Vgs: 5 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1037pF @ 15V Power - Max: 3.6W, 4.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: 8-DFN (5x6)	package: 8-PowerVDFN	Voorraad72.000	Logic Level Gate	30V	22A, 36A	5 mOhm @ 20A, 10V	2.2V @ 250µA	22nC @ 10V	1037pF @ 15V	3.6W, 4.3W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	8-DFN (5x6)
DMC3016LDV-13	Diodes Incorporated	MOSFET BVDSS: 31V 40V POWERDI333 FET Type: N and P-Channel Complementary FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 21A (Tc), 15A (Tc) Rds On (Max) @ Id, Vgs: 12 mOhm @ 7A, 10V, 25 mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1184pF @ 15V, 1188pF @ 15V Power - Max: 900mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PowerDI3333-8	package: 8-PowerVDFN	Voorraad6.992	Standard	30V	21A (Tc), 15A (Tc)	12 mOhm @ 7A, 10V, 25 mOhm @ 7A, 10V	2.4V @ 250µA	9.5nC @ 4.5V	1184pF @ 15V, 1188pF @ 15V	900mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	PowerDI3333-8
SI5933CDC-T1-E3	Vishay Siliconix	MOSFET 2P-CH 20V 3.7A 1206-8 FET Type: 2 P-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.7A Rds On (Max) @ Id, Vgs: 144 mOhm @ 2.5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 276pF @ 10V Power - Max: 2.8W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 1206-8 ChipFET?	package: 8-SMD, Flat Lead	Voorraad216.000	Standard	20V	3.7A	144 mOhm @ 2.5A, 4.5V	1V @ 250µA	6.8nC @ 5V	276pF @ 10V	2.8W	-55°C ~ 150°C (TJ)	Surface Mount	8-SMD, Flat Lead	1206-8 ChipFET?
IRF7905TRPBF	Infineon Technologies	MOSFET 2N-CH 30V 7.8A/8.9A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.8A, 8.9A Rds On (Max) @ Id, Vgs: 21.8 mOhm @ 7.8A, 10V Vgs(th) (Max) @ Id: 2.25V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	package: 8-SOIC (0.154", 3.90mm Width)	Voorraad617.328	Logic Level Gate	30V	7.8A, 8.9A	21.8 mOhm @ 7.8A, 10V	2.25V @ 25µA	6.9nC @ 4.5V	600pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
FDMS3610S	Fairchild/ON Semiconductor	MOSFET 2N-CH 25V 17.5A/30A 8-MLP FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 17.5A, 30A Rds On (Max) @ Id, Vgs: 5 mOhm @ 17.5A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 13V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: Power56	package: 8-PowerTDFN	Voorraad7.376	Logic Level Gate	25V	17.5A, 30A	5 mOhm @ 17.5A, 10V	2V @ 250µA	26nC @ 10V	1570pF @ 13V	1W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	Power56
SI5513CDC-T1-GE3	Vishay Siliconix	MOSFET N/P-CH 20V 4A 1206-8 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A, 3.7A Rds On (Max) @ Id, Vgs: 55 mOhm @ 4.4A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 285pF @ 10V Power - Max: 3.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 1206-8 ChipFET?	package: 8-SMD, Flat Lead	Voorraad38.100	Logic Level Gate	20V	4A, 3.7A	55 mOhm @ 4.4A, 4.5V	1.5V @ 250µA	4.2nC @ 5V	285pF @ 10V	3.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SMD, Flat Lead	1206-8 ChipFET?
FDC3601N	Fairchild/ON Semiconductor	MOSFET 2N-CH 100V 1A SSOT-6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1A Rds On (Max) @ Id, Vgs: 500 mOhm @ 1A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 153pF @ 50V Power - Max: 700mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: SuperSOT?-6	package: SOT-23-6 Thin, TSOT-23-6	Voorraad36.696	Logic Level Gate	100V	1A	500 mOhm @ 1A, 10V	4V @ 250µA	5nC @ 10V	153pF @ 50V	700mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	SuperSOT?-6
DMC3730UFL3-7	Diodes Incorporated	MOSFET N/P-CHA 30V 1.1A DFN1310 FET Type: N and P-Channel Complementary FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.1A, 700mA Rds On (Max) @ Id, Vgs: 460 mOhm @ 200mA, 4.5V Vgs(th) (Max) @ Id: 950mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 65.9pF @ 25V Power - Max: 390mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-XFDFN Supplier Device Package: X2-DFN1310-6	package: 6-XFDFN	Voorraad6.048	Standard	30V	1.1A, 700mA	460 mOhm @ 200mA, 4.5V	950mV @ 250µA	0.9nC @ 4.5V	65.9pF @ 25V	390mW	-55°C ~ 150°C (TJ)	Surface Mount	6-XFDFN	X2-DFN1310-6
SI1902CDL-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 20V 1.1A SC-70-6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.1A Rds On (Max) @ Id, Vgs: 235 mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 62pF @ 10V Power - Max: 420mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6 (SOT-363)	package: 6-TSSOP, SC-88, SOT-363	Voorraad370.368	Logic Level Gate	20V	1.1A	235 mOhm @ 1A, 4.5V	1.5V @ 250µA	3nC @ 10V	62pF @ 10V	420mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6 (SOT-363)
IRF7504TRPBF	Infineon Technologies	MOSFET 2P-CH 20V 1.7A MICRO8 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.7A Rds On (Max) @ Id, Vgs: 270 mOhm @ 1.2A, 4.5V Vgs(th) (Max) @ Id: 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 15V Power - Max: 1.25W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Supplier Device Package: Micro8?	package: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Voorraad114.012	Logic Level Gate	20V	1.7A	270 mOhm @ 1.2A, 4.5V	700mV @ 250µA	8.2nC @ 4.5V	240pF @ 15V	1.25W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Micro8?
XP3C023AMT	YAGEO XSEMI	MOSFET N AND P-CH 30V 12A 10A FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 10A (Ta) Rds On (Max) @ Id, Vgs: 10.4mOhm @ 10A, 10V, 23.5mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 19.2nC @ 4.5V, 21.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2320pF @ 15V, 2480pF @ 15V Power - Max: 3.57W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerLDFN Supplier Device Package: PMPAK® 5 x 6	package: -	Voorraad3.000	-	30V	12A (Ta), 10A (Ta)	10.4mOhm @ 10A, 10V, 23.5mOhm @ 7.5A, 10V	2.5V @ 1mA	19.2nC @ 4.5V, 21.6nC @ 4.5V	2320pF @ 15V, 2480pF @ 15V	3.57W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerLDFN	PMPAK® 5 x 6
DMN62D2UDWQ-7	Diodes Incorporated	MOSFET BVDSS: 41V~60V SOT363 T&R FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 340mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V Power - Max: 300mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	package: -	Request a Quote	-	60V	340mA (Ta)	2Ohm @ 50mA, 5V	1V @ 250µA	0.8nC @ 4.5V	41pF @ 30V	300mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
SIZ240DT-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 40V 17.2A 8PWRPAIR FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 17.2A (Ta), 48A (Tc), 16.9A (Ta), 47A (Tc) Rds On (Max) @ Id, Vgs: 8.05mOhm @ 10A, 10V, 8.41mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V, 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1180pF @ 20V, 1070pF @ 20V Power - Max: 4.3W (Ta), 33W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-PowerPair® (3.3x3.3)	package: -	Request a Quote	-	40V	17.2A (Ta), 48A (Tc), 16.9A (Ta), 47A (Tc)	8.05mOhm @ 10A, 10V, 8.41mOhm @ 10A, 10V	2.4V @ 250µA	23nC @ 10V, 22nC @ 10V	1180pF @ 20V, 1070pF @ 20V	4.3W (Ta), 33W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-PowerPair® (3.3x3.3)
SH8K37GZETB	Rohm Semiconductor	MOSFET 2N-CH 60V 5.5A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) Rds On (Max) @ Id, Vgs: 46mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id: 2.7V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 30V Power - Max: 1.4W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	package: -	Voorraad7.068	-	60V	5.5A (Ta)	46mOhm @ 5.5A, 10V	2.7V @ 100µA	9.7nC @ 10V	500pF @ 30V	1.4W (Ta)	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
MSCSM120VR1M31C1AG	Microchip Technology	SIC 2N-CH 1200V 89A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 89A (Tc) Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V Vgs(th) (Max) @ Id: 2.8V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V Power - Max: 395W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	package: -	Request a Quote	-	1200V (1.2kV)	89A (Tc)	31mOhm @ 40A, 20V	2.8V @ 3mA	232nC @ 20V	3020pF @ 1000V	395W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
IRFI4020H-117PXKMA1	Infineon Technologies	MOSFET 2N-CH 200V 9.1A TO220-5 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 9.1A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id: 4.9V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 25V Power - Max: 21W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-5 Full Pack, Formed Leads Supplier Device Package: TO-220-5 Full-Pak	package: -	Voorraad1.116	-	200V	9.1A (Tc)	100mOhm @ 5.5A, 10V	4.9V @ 100µA	29nC @ 10V	1240pF @ 25V	21W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-5 Full Pack, Formed Leads	TO-220-5 Full-Pak
ECH8604-TL-E-SY	Sanyo	MOSFET N-CH FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MSCSM70DUM10T3AG	Microchip Technology	SIC 2N-CH 700V 241A SP3F FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 241A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 80A, 20V Vgs(th) (Max) @ Id: 2.4V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 430nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 700V Power - Max: 690W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: SP3F	package: -	Voorraad30	-	700V	241A (Tc)	9.5mOhm @ 80A, 20V	2.4V @ 8mA	430nC @ 20V	9000pF @ 700V	690W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	SP3F

IRF5851TRPBF

Infineon Technologies

MOSFET N/P-CH 20V 2.7A 6-TSOP

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.7A, 2.2A
Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.7A, 4.5V
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V
Power - Max: 960mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP

package: SOT-23-6 Thin, TSOT-23-6

Voorraad463.020

Logic Level Gate

20V

2.7A, 2.2A

90 mOhm @ 2.7A, 4.5V

1.25V @ 250µA

6nC @ 4.5V

400pF @ 15V

960mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

6-TSOP

IRF7754TR

Infineon Technologies

MOSFET 2P-CH 12V 5.5A 8-TSSOP

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 5.5A
Rds On (Max) @ Id, Vgs: 25 mOhm @ 5.4A, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1984pF @ 6V
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

package: 8-TSSOP (0.173", 4.40mm Width)

Voorraad7.680

Logic Level Gate

12V

5.5A

25 mOhm @ 5.4A, 4.5V

900mV @ 250µA

22nC @ 4.5V

1984pF @ 6V

1W

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

PMDPB38UNE,115

NXP

MOSFET 2N-CH 20V 4A HUSON6

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A
Rds On (Max) @ Id, Vgs: 46 mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 268pF @ 10V
Power - Max: 510mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: DFN2020-6

package: 6-UDFN Exposed Pad

Voorraad2.064

Logic Level Gate

20V

4A

46 mOhm @ 3A, 4.5V

1V @ 250µA

4.4nC @ 4.5V

268pF @ 10V

510mW

-55°C ~ 150°C (TJ)

Surface Mount

6-UDFN Exposed Pad

DFN2020-6

SI4913DY-T1-GE3

Vishay Siliconix

MOSFET 2P-CH 20V 7.1A 8-SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7.1A
Rds On (Max) @ Id, Vgs: 15 mOhm @ 9.4A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 500µA
Gate Charge (Qg) (Max) @ Vgs: 65nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

package: 8-SOIC (0.154", 3.90mm Width)

Voorraad57.828

Logic Level Gate

20V

7.1A

15 mOhm @ 9.4A, 4.5V

1V @ 500µA

65nC @ 4.5V

-

1.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SI4561DY-T1-GE3

Vishay Siliconix

MOSFET N/P-CH 40V 6.8A 8-SOIC

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6.8A, 7.2A
Rds On (Max) @ Id, Vgs: 35.5 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 20V
Power - Max: 3W, 3.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

package: 8-SOIC (0.154", 3.90mm Width)

Voorraad27.960

Logic Level Gate

40V

6.8A, 7.2A

35.5 mOhm @ 5A, 10V

3V @ 250µA

20nC @ 10V

640pF @ 20V

3W, 3.3W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

MMDF2N02ER2G

ON Semiconductor

MOSFET 2N-CH 25V 3.6A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 3.6A
Rds On (Max) @ Id, Vgs: 100 mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 532pF @ 16V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

package: 8-SOIC (0.154", 3.90mm Width)

Voorraad144.060

Logic Level Gate

25V

3.6A

100 mOhm @ 2.2A, 10V

3V @ 250µA

30nC @ 10V

532pF @ 16V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

FDC6020C

Fairchild/ON Semiconductor

MOSFET N/P-CH 20V 6SSOT

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.9A, 4.2A
Rds On (Max) @ Id, Vgs: 27 mOhm @ 5.9A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 677pF @ 10V
Power - Max: 1.2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SSOT Flat-lead, SuperSOT?-6 FLMP
Supplier Device Package: SuperSOT?-6 FLMP

package: 6-SSOT Flat-lead, SuperSOT?-6 FLMP

Voorraad19.308

Logic Level Gate

20V

5.9A, 4.2A

27 mOhm @ 5.9A, 4.5V

1.5V @ 250µA

8nC @ 4.5V

677pF @ 10V

1.2W

-55°C ~ 150°C (TJ)

Surface Mount

6-SSOT Flat-lead, SuperSOT?-6 FLMP

SuperSOT?-6 FLMP

APTM100AM90FG

Microsemi Corporation

MOSFET 2N-CH 1000V 78A SP6

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C: 78A
Rds On (Max) @ Id, Vgs: 105 mOhm @ 39A, 10V
Vgs(th) (Max) @ Id: 5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: 744nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 20700pF @ 25V
Power - Max: 1250W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6

package: SP6

Voorraad5.520

Standard

1000V (1kV)

78A

105 mOhm @ 39A, 10V

5V @ 10mA

744nC @ 10V

20700pF @ 25V

1250W

-40°C ~ 150°C (TJ)

Chassis Mount

SP6

APTM100A40FT1G

Microsemi Corporation

MOSFET 2N-CH 1000V 21A SP1

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C: 21A
Rds On (Max) @ Id, Vgs: 480 mOhm @ 18A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 305nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7868pF @ 25V
Power - Max: 390W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP1
Supplier Device Package: SP1

package: SP1

Voorraad7.856

Standard

1000V (1kV)

21A

480 mOhm @ 18A, 10V

5V @ 2.5mA

305nC @ 10V

7868pF @ 25V

390W

-40°C ~ 150°C (TJ)

Chassis Mount

SP1

APTC80DDA15T3G

Microsemi Corporation

MOSFET 2N-CH 800V 28A SP3

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 28A
Rds On (Max) @ Id, Vgs: 150 mOhm @ 14A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 2mA
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V
Power - Max: 277W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP3
Supplier Device Package: SP3

package: SP3

Voorraad6.752

Standard

800V

28A

150 mOhm @ 14A, 10V

3.9V @ 2mA

180nC @ 10V

4507pF @ 25V

277W

-40°C ~ 150°C (TJ)

Chassis Mount

SP3

AON6932

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 22A/36A 8DFN

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 22A, 36A
Rds On (Max) @ Id, Vgs: 5 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1037pF @ 15V
Power - Max: 3.6W, 4.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: 8-DFN (5x6)

package: 8-PowerVDFN

Voorraad72.000

Logic Level Gate

30V

22A, 36A

5 mOhm @ 20A, 10V

2.2V @ 250µA

22nC @ 10V

1037pF @ 15V

3.6W, 4.3W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerVDFN

8-DFN (5x6)

DMC3016LDV-13

Diodes Incorporated

MOSFET BVDSS: 31V 40V POWERDI333

FET Type: N and P-Channel Complementary
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc), 15A (Tc)
Rds On (Max) @ Id, Vgs: 12 mOhm @ 7A, 10V, 25 mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1184pF @ 15V, 1188pF @ 15V
Power - Max: 900mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PowerDI3333-8

package: 8-PowerVDFN

Voorraad6.992

Standard

30V

21A (Tc), 15A (Tc)

12 mOhm @ 7A, 10V, 25 mOhm @ 7A, 10V

2.4V @ 250µA

9.5nC @ 4.5V

1184pF @ 15V, 1188pF @ 15V

900mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerVDFN

PowerDI3333-8

SI5933CDC-T1-E3

Vishay Siliconix

MOSFET 2P-CH 20V 3.7A 1206-8

FET Type: 2 P-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.7A
Rds On (Max) @ Id, Vgs: 144 mOhm @ 2.5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 276pF @ 10V
Power - Max: 2.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 1206-8 ChipFET?

package: 8-SMD, Flat Lead

Voorraad216.000

Standard

20V

3.7A

144 mOhm @ 2.5A, 4.5V

1V @ 250µA

6.8nC @ 5V

276pF @ 10V

2.8W

-55°C ~ 150°C (TJ)

Surface Mount

8-SMD, Flat Lead

1206-8 ChipFET?

IRF7905TRPBF

Infineon Technologies

MOSFET 2N-CH 30V 7.8A/8.9A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.8A, 8.9A
Rds On (Max) @ Id, Vgs: 21.8 mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id: 2.25V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

package: 8-SOIC (0.154", 3.90mm Width)

Voorraad617.328

Logic Level Gate

30V

7.8A, 8.9A

21.8 mOhm @ 7.8A, 10V

2.25V @ 25µA

6.9nC @ 4.5V

600pF @ 15V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

FDMS3610S

Fairchild/ON Semiconductor

MOSFET 2N-CH 25V 17.5A/30A 8-MLP

FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 17.5A, 30A
Rds On (Max) @ Id, Vgs: 5 mOhm @ 17.5A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 13V
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: Power56

package: 8-PowerTDFN

Voorraad7.376

Logic Level Gate

25V

17.5A, 30A

5 mOhm @ 17.5A, 10V

2V @ 250µA

26nC @ 10V

1570pF @ 13V

1W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerTDFN

Power56

SI5513CDC-T1-GE3

Vishay Siliconix

MOSFET N/P-CH 20V 4A 1206-8

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A, 3.7A
Rds On (Max) @ Id, Vgs: 55 mOhm @ 4.4A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 285pF @ 10V
Power - Max: 3.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 1206-8 ChipFET?

package: 8-SMD, Flat Lead

Voorraad38.100

Logic Level Gate

20V

4A, 3.7A

55 mOhm @ 4.4A, 4.5V

1.5V @ 250µA

4.2nC @ 5V

285pF @ 10V

3.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SMD, Flat Lead

1206-8 ChipFET?

FDC3601N

Fairchild/ON Semiconductor

MOSFET 2N-CH 100V 1A SSOT-6

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1A
Rds On (Max) @ Id, Vgs: 500 mOhm @ 1A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 153pF @ 50V
Power - Max: 700mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: SuperSOT?-6

package: SOT-23-6 Thin, TSOT-23-6

Voorraad36.696

Logic Level Gate

100V

1A

500 mOhm @ 1A, 10V

4V @ 250µA

5nC @ 10V

153pF @ 50V

700mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

SuperSOT?-6

DMC3730UFL3-7

Diodes Incorporated

MOSFET N/P-CHA 30V 1.1A DFN1310

FET Type: N and P-Channel Complementary
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.1A, 700mA
Rds On (Max) @ Id, Vgs: 460 mOhm @ 200mA, 4.5V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 65.9pF @ 25V
Power - Max: 390mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-XFDFN
Supplier Device Package: X2-DFN1310-6

package: 6-XFDFN

Voorraad6.048

Standard

30V

1.1A, 700mA

460 mOhm @ 200mA, 4.5V

950mV @ 250µA

0.9nC @ 4.5V

65.9pF @ 25V

390mW

-55°C ~ 150°C (TJ)

Surface Mount

6-XFDFN

X2-DFN1310-6

SI1902CDL-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 20V 1.1A SC-70-6

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.1A
Rds On (Max) @ Id, Vgs: 235 mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 62pF @ 10V
Power - Max: 420mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6 (SOT-363)

package: 6-TSSOP, SC-88, SOT-363

Voorraad370.368

Logic Level Gate

20V

1.1A

235 mOhm @ 1A, 4.5V

1.5V @ 250µA

3nC @ 10V

62pF @ 10V

420mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-70-6 (SOT-363)

IRF7504TRPBF

Infineon Technologies

MOSFET 2P-CH 20V 1.7A MICRO8

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.7A
Rds On (Max) @ Id, Vgs: 270 mOhm @ 1.2A, 4.5V
Vgs(th) (Max) @ Id: 700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 15V
Power - Max: 1.25W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package: Micro8?

package: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

Voorraad114.012

Logic Level Gate

20V

1.7A

270 mOhm @ 1.2A, 4.5V

700mV @ 250µA

8.2nC @ 4.5V

240pF @ 15V

1.25W

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

Micro8?

XP3C023AMT

YAGEO XSEMI

MOSFET N AND P-CH 30V 12A 10A

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 10A (Ta)
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 10A, 10V, 23.5mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 19.2nC @ 4.5V, 21.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2320pF @ 15V, 2480pF @ 15V
Power - Max: 3.57W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerLDFN
Supplier Device Package: PMPAK® 5 x 6

package: -

Voorraad3.000

-

30V

12A (Ta), 10A (Ta)

10.4mOhm @ 10A, 10V, 23.5mOhm @ 7.5A, 10V

2.5V @ 1mA

19.2nC @ 4.5V, 21.6nC @ 4.5V

2320pF @ 15V, 2480pF @ 15V

3.57W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerLDFN

PMPAK® 5 x 6

DMN62D2UDWQ-7

Diodes Incorporated

MOSFET BVDSS: 41V~60V SOT363 T&R

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 340mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V
Power - Max: 300mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

package: -

Request a Quote

-

60V

340mA (Ta)

2Ohm @ 50mA, 5V

1V @ 250µA

0.8nC @ 4.5V

41pF @ 30V

300mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

SIZ240DT-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 40V 17.2A 8PWRPAIR

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 17.2A (Ta), 48A (Tc), 16.9A (Ta), 47A (Tc)
Rds On (Max) @ Id, Vgs: 8.05mOhm @ 10A, 10V, 8.41mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V, 22nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1180pF @ 20V, 1070pF @ 20V
Power - Max: 4.3W (Ta), 33W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-PowerPair® (3.3x3.3)

package: -

Request a Quote

-

40V

17.2A (Ta), 48A (Tc), 16.9A (Ta), 47A (Tc)

8.05mOhm @ 10A, 10V, 8.41mOhm @ 10A, 10V

2.4V @ 250µA

23nC @ 10V, 22nC @ 10V

1180pF @ 20V, 1070pF @ 20V

4.3W (Ta), 33W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

8-PowerPair® (3.3x3.3)

SH8K37GZETB

Rohm Semiconductor

MOSFET 2N-CH 60V 5.5A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id: 2.7V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 30V
Power - Max: 1.4W (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

package: -

Voorraad7.068

-

60V

5.5A (Ta)

46mOhm @ 5.5A, 10V

2.7V @ 100µA

9.7nC @ 10V

500pF @ 30V

1.4W (Ta)

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

MSCSM120VR1M31C1AG

Microchip Technology

SIC 2N-CH 1200V 89A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
Vgs(th) (Max) @ Id: 2.8V @ 3mA
Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
Power - Max: 395W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

package: -

Request a Quote

-

1200V (1.2kV)

89A (Tc)

31mOhm @ 40A, 20V

2.8V @ 3mA

232nC @ 20V

3020pF @ 1000V

395W (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

-

IRFI4020H-117PXKMA1

Infineon Technologies

MOSFET 2N-CH 200V 9.1A TO220-5

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 9.1A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id: 4.9V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 25V
Power - Max: 21W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-5 Full Pack, Formed Leads
Supplier Device Package: TO-220-5 Full-Pak

package: -

Voorraad1.116

-

200V

9.1A (Tc)

100mOhm @ 5.5A, 10V

4.9V @ 100µA

29nC @ 10V

1240pF @ 25V

21W (Tc)

-55°C ~ 150°C (TJ)

Through Hole

TO-220-5 Full Pack, Formed Leads

TO-220-5 Full-Pak

ECH8604-TL-E-SY

Sanyo

MOSFET N-CH

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

package: -

Request a Quote

-

MSCSM70DUM10T3AG

Microchip Technology

SIC 2N-CH 700V 241A SP3F

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 241A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 80A, 20V
Vgs(th) (Max) @ Id: 2.4V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 430nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 700V
Power - Max: 690W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: SP3F

package: -

Voorraad30

-

700V

241A (Tc)

9.5mOhm @ 80A, 20V

2.4V @ 8mA

430nC @ 20V

9000pF @ 700V

690W (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

SP3F