Pagina 170 - Transistors - FET's, MOSFET's - Arrays | Discrete halfgeleiderproducten | Heisener Electronics
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Transistors - FET's, MOSFET's - Arrays

Archief 5.684
Pagina  170/203
Afbeelding
Onderdeelnummer
Fabrikant
Omschrijving
package
Voorraad
Aantal
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
SI4310BDY-T1-E3
Vishay Siliconix

MOSFET 2N-CH 30V 7.5A 14SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 7.5A, 9.8A
  • Rds On (Max) @ Id, Vgs: 11 mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2370pF @ 15V
  • Power - Max: 1.14W, 1.47W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 14-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 14-SOIC
package: 14-SOIC (0.154", 3.90mm Width)
Voorraad6.992
Logic Level Gate
30V
7.5A, 9.8A
11 mOhm @ 10A, 10V
3V @ 250µA
18nC @ 4.5V
2370pF @ 15V
1.14W, 1.47W
-55°C ~ 150°C (TJ)
Surface Mount
14-SOIC (0.154", 3.90mm Width)
14-SOIC
APTM20AM05FTG
Microsemi Corporation

MOSFET 2N-CH 200V 333A SP4

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 333A
  • Rds On (Max) @ Id, Vgs: 5 mOhm @ 166.5A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs: 1184nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 40800pF @ 25V
  • Power - Max: 1250W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP4
  • Supplier Device Package: SP4
package: SP4
Voorraad4.560
Standard
200V
333A
5 mOhm @ 166.5A, 10V
4V @ 8mA
1184nC @ 10V
40800pF @ 25V
1250W
-40°C ~ 150°C (TJ)
Chassis Mount
SP4
SP4
hot SI4569DY-T1-E3
Vishay Siliconix

MOSFET N/P-CH 40V 7.6A 8-SOIC

  • FET Type: N and P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 7.6A, 7.9A
  • Rds On (Max) @ Id, Vgs: 27 mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 855pF @ 20V
  • Power - Max: 3.1W, 3.2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad131.568
Standard
40V
7.6A, 7.9A
27 mOhm @ 6A, 10V
2V @ 250µA
32nC @ 10V
855pF @ 20V
3.1W, 3.2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot FDC6000NZ
Fairchild/ON Semiconductor

MOSFET 2N-CH 20V 7.3A 6SSOT

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 7.3A
  • Rds On (Max) @ Id, Vgs: 20 mOhm @ 6.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 10V
  • Power - Max: 1.2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-SSOT Flat-lead, SuperSOT?-6 FLMP
  • Supplier Device Package: SuperSOT?-6 FLMP
package: 6-SSOT Flat-lead, SuperSOT?-6 FLMP
Voorraad12.192
Logic Level Gate
20V
7.3A
20 mOhm @ 6.5A, 4.5V
1.5V @ 250µA
11nC @ 4.5V
840pF @ 10V
1.2W
-55°C ~ 150°C (TJ)
Surface Mount
6-SSOT Flat-lead, SuperSOT?-6 FLMP
SuperSOT?-6 FLMP
hot NTHD4401PT3G
ON Semiconductor

MOSFET 2P-CH 20V 2.1A CHIPFET

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.1A
  • Rds On (Max) @ Id, Vgs: 155 mOhm @ 2.1A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V
  • Power - Max: 1.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: ChipFET?
package: 8-SMD, Flat Lead
Voorraad202.200
Logic Level Gate
20V
2.1A
155 mOhm @ 2.1A, 4.5V
1.2V @ 250µA
6nC @ 4.5V
300pF @ 10V
1.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-SMD, Flat Lead
ChipFET?
APTC90H12SCTG
Microsemi Corporation

MOSFET 4N-CH 900V 30A SP4

  • FET Type: 4 N-Channel (H-Bridge)
  • FET Feature: Super Junction
  • Drain to Source Voltage (Vdss): 900V
  • Current - Continuous Drain (Id) @ 25°C: 30A
  • Rds On (Max) @ Id, Vgs: 120 mOhm @ 26A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 3mA
  • Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V
  • Power - Max: 250W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP4
  • Supplier Device Package: SP4
package: SP4
Voorraad6.016
Super Junction
900V
30A
120 mOhm @ 26A, 10V
3.5V @ 3mA
270nC @ 10V
6800pF @ 100V
250W
-40°C ~ 150°C (TJ)
Chassis Mount
SP4
SP4
FMM110-015X2F
IXYS

MOSFET 2N-CH 150V 53A I4-PAC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 53A
  • Rds On (Max) @ Id, Vgs: 20 mOhm @ 55A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 8600pF @ 25V
  • Power - Max: 180W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: i4-Pac?-5
  • Supplier Device Package: ISOPLUS i4-PAC?
package: i4-Pac?-5
Voorraad3.392
Standard
150V
53A
20 mOhm @ 55A, 10V
4.5V @ 250µA
150nC @ 10V
8600pF @ 25V
180W
-55°C ~ 175°C (TJ)
Through Hole
i4-Pac?-5
ISOPLUS i4-PAC?
ALD1101BPAL
Advanced Linear Devices Inc.

MOSFET 2N-CH 10.6V 8DIP

  • FET Type: 2 N-Channel (Dual) Matched Pair
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 10.6V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 75 Ohm @ 5V
  • Vgs(th) (Max) @ Id: 1V @ 10µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 500mW
  • Operating Temperature: 0°C ~ 70°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-PDIP
package: 8-DIP (0.300", 7.62mm)
Voorraad4.336
Standard
10.6V
-
75 Ohm @ 5V
1V @ 10µA
-
-
500mW
0°C ~ 70°C (TJ)
Through Hole
8-DIP (0.300", 7.62mm)
8-PDIP
hot TC6215TG-G
Microchip Technology

MOSFET N/P-CH 150V 8SOIC

  • FET Type: N and P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 4 Ohm @ 2A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 25V
  • Power - Max: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad91.740
Standard
150V
-
4 Ohm @ 2A, 10V
2V @ 1mA
-
120pF @ 25V
-
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
NVMFD5873NLT1G
ON Semiconductor

MOSFET 2N-CH 60V 10A SO8FL

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 10A
  • Rds On (Max) @ Id, Vgs: 13 mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1560pF @ 25V
  • Power - Max: 3.1W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
package: 8-PowerTDFN
Voorraad7.776
Logic Level Gate
60V
10A
13 mOhm @ 15A, 10V
2.5V @ 250µA
30.5nC @ 10V
1560pF @ 25V
3.1W
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerTDFN
8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
DMC3016LDV-7
Diodes Incorporated

MOSFET BVDSS: 31V 40V POWERDI333

  • FET Type: N and P-Channel Complementary
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 21A (Tc), 15A (Tc)
  • Rds On (Max) @ Id, Vgs: 12 mOhm @ 7A, 10V, 25 mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1184pF @ 15V, 1188pF @ 15V
  • Power - Max: 900mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PowerDI3333-8
package: 8-PowerVDFN
Voorraad5.968
Standard
30V
21A (Tc), 15A (Tc)
12 mOhm @ 7A, 10V, 25 mOhm @ 7A, 10V
2.4V @ 250µA
9.5nC @ 4.5V
1184pF @ 15V, 1188pF @ 15V
900mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerVDFN
PowerDI3333-8
EFC2J003NUZTCG
ON Semiconductor

MOSFET N-CH 12V DUAL WLCSP6

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
Voorraad2.512
-
-
-
-
-
-
-
-
-
-
-
-
DMN33D8LDW-7
Diodes Incorporated

MOSFET 2N-CH 30V 0.25A

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 250mA
  • Rds On (Max) @ Id, Vgs: 2.4 Ohm @ 250mA, 10V
  • Vgs(th) (Max) @ Id: 1.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 48pF @ 5V
  • Power - Max: 350mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
package: 6-TSSOP, SC-88, SOT-363
Voorraad3.168
Standard
30V
250mA
2.4 Ohm @ 250mA, 10V
1.5V @ 100µA
1.23nC @ 10V
48pF @ 5V
350mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
BSZ15DC02KDHXTMA1
Infineon Technologies

MOSFET N/P-CH 20V 8TDSON

  • FET Type: N and P-Channel Complementary
  • FET Feature: Logic Level Gate, 2.5V Drive
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5.1A, 3.2A
  • Rds On (Max) @ Id, Vgs: 55 mOhm @ 5.1A, 4.5V
  • Vgs(th) (Max) @ Id: 1.4V @ 110µA
  • Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 419pF @ 10V
  • Power - Max: 2.5W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: PG-TSDSON-8-FL
package: 8-PowerTDFN
Voorraad2.048
Logic Level Gate, 2.5V Drive
20V
5.1A, 3.2A
55 mOhm @ 5.1A, 4.5V
1.4V @ 110µA
2.8nC @ 4.5V
419pF @ 10V
2.5W
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerTDFN
PG-TSDSON-8-FL
DMN2008LFU-7
Diodes Incorporated

MOSFET 2N-CHA 20V 14.5A DFN2030

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 14.5A
  • Rds On (Max) @ Id, Vgs: 5.4 mOhm @ 5.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250A
  • Gate Charge (Qg) (Max) @ Vgs: 42.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1418pF @ 10V
  • Power - Max: 1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UFDFN Exposed Pad
  • Supplier Device Package: U-DFN2030-6 (Type B)
package: 6-UFDFN Exposed Pad
Voorraad3.264
Standard
20V
14.5A
5.4 mOhm @ 5.5A, 4.5V
1.5V @ 250A
42.3nC @ 10V
1418pF @ 10V
1W
-55°C ~ 150°C (TJ)
Surface Mount
6-UFDFN Exposed Pad
U-DFN2030-6 (Type B)
hot SI4816BDY-T1-E3
Vishay Siliconix

MOSFET 2N-CH 30V 5.8A 8-SOIC

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5.8A, 8.2A
  • Rds On (Max) @ Id, Vgs: 18.5 mOhm @ 6.8A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1W, 1.25W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad55.704
Logic Level Gate
30V
5.8A, 8.2A
18.5 mOhm @ 6.8A, 10V
3V @ 250µA
10nC @ 5V
-
1W, 1.25W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot SI7997DP-T1-GE3
Vishay Siliconix

MOSFET 2P-CH 30V 60A PPAK SO-8

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 60A
  • Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6200pF @ 15V
  • Power - Max: 46W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? SO-8 Dual
  • Supplier Device Package: PowerPAK? SO-8 Dual
package: PowerPAK? SO-8 Dual
Voorraad16.404
Standard
30V
60A
5.5 mOhm @ 20A, 10V
2.2V @ 250µA
160nC @ 10V
6200pF @ 15V
46W
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SO-8 Dual
PowerPAK? SO-8 Dual
CCB032M12FM3
Wolfspeed, Inc.

SIC 6N-CH 1200V 40A MODULE

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 40A
  • Rds On (Max) @ Id, Vgs: 42.6mOhm @ 30A, 15V
  • Vgs(th) (Max) @ Id: 3.6V @ 11.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 118nC @ 15V
  • Input Capacitance (Ciss) (Max) @ Vds: 3400pF @ 800V
  • Power - Max: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
package: -
Voorraad243
-
1200V (1.2kV)
40A
42.6mOhm @ 30A, 15V
3.6V @ 11.5mA
118nC @ 15V
3400pF @ 800V
-
-40°C ~ 150°C (TJ)
Chassis Mount
Module
-
HT8KE5TB1
Rohm Semiconductor

MOSFET 2N-CH 100V 2.5A/7A 8HSMT

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), 7A (Tc)
  • Rds On (Max) @ Id, Vgs: 193mOhm @ 2.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 50V
  • Power - Max: 2W (Ta), 13W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: 8-HSMT (3.2x3)
package: -
Voorraad8.970
-
100V
2.5A (Ta), 7A (Tc)
193mOhm @ 2.5A, 10V
2.5V @ 1mA
2.9nC @ 10V
90pF @ 50V
2W (Ta), 13W (Tc)
150°C (TJ)
Surface Mount
8-PowerVDFN
8-HSMT (3.2x3)
DMC1028UVT-7
Diodes Incorporated

MOSFET N/P-CH 12V 6.1A TSOT26

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 12V, 20V
  • Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 3.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 25mOhm @ 5.2A, 4.5V, 80mOhm @ 3.8A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 8V, 11.5nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 787pF @ 6V, 576pF @ 10V
  • Power - Max: 800mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: TSOT-26
package: -
Voorraad10.983
-
12V, 20V
6.1A (Ta), 3.5A (Ta)
25mOhm @ 5.2A, 4.5V, 80mOhm @ 3.8A, 4.5V
1V @ 250µA
18.5nC @ 8V, 11.5nC @ 8V
787pF @ 6V, 576pF @ 10V
800mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
TSOT-26
SQ4532AEY-T1_GE3
Vishay Siliconix

MOSFET N/P-CH 30V 7.3A 8SOIC

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc), 5.3A (Tc)
  • Rds On (Max) @ Id, Vgs: 31mOhm @ 4.9A, 10V, 70mOhm @ 3.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V, 10.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 535pF @ 15V, 528pF @ 15V
  • Power - Max: 3.3W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
package: -
Voorraad9.534
-
30V
7.3A (Tc), 5.3A (Tc)
31mOhm @ 4.9A, 10V, 70mOhm @ 3.5A, 10V
2.5V @ 250µA
7.8nC @ 10V, 10.2nC @ 10V
535pF @ 15V, 528pF @ 15V
3.3W
-55°C ~ 175°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
GSFB0305
Good-Ark Semiconductor

MOSFET 2P-CH 30V 4.2A/8A 6PPAK

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta), 8A (Tc)
  • Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V
  • Power - Max: 1.9W (Ta), 7.4W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-WDFN Exposed Pad
  • Supplier Device Package: 6-PPAK (2x2)
package: -
Voorraad18.000
-
30V
4.2A (Ta), 8A (Tc)
75mOhm @ 3A, 10V
2.5V @ 250µA
10nC @ 4.5V
820pF @ 15V
1.9W (Ta), 7.4W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
6-WDFN Exposed Pad
6-PPAK (2x2)
SSM6L36TU-LF
Toshiba Semiconductor and Storage

MOSFET N/P-CH 20V 0.5A UF6

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate, 1.5V Drive
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), 330mA (Ta)
  • Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V, 1.31Ohm @ 100mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V, 1.2nC @ 4V
  • Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V, 43pF @ 10V
  • Power - Max: 500mW (Ta)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, Flat Leads
  • Supplier Device Package: UF6
package: -
Voorraad11.970
Logic Level Gate, 1.5V Drive
20V
500mA (Ta), 330mA (Ta)
630mOhm @ 200mA, 5V, 1.31Ohm @ 100mA, 4.5V
1V @ 1mA
1.23nC @ 4V, 1.2nC @ 4V
46pF @ 10V, 43pF @ 10V
500mW (Ta)
150°C
Surface Mount
6-SMD, Flat Leads
UF6
SCH2602-TL-E
onsemi

PCH+NCH 2.5V DRIVE SERIES

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
Request a Quote
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NTMFD5C674NLT1G
onsemi

MOSFET 2N-CH 60V 11A/42A 8DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc)
  • Rds On (Max) @ Id, Vgs: 14.4mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 25V
  • Power - Max: 3W (Ta), 37W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
package: -
Voorraad3.000
-
60V
11A (Ta), 42A (Tc)
14.4mOhm @ 10A, 10V
2.2V @ 25µA
10nC @ 10V
640pF @ 25V
3W (Ta), 37W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerTDFN
8-DFN (5x6) Dual Flag (SO8FL-Dual)
AO4606
Alpha & Omega Semiconductor Inc.

MOSFET N/P-CH 30V 6A/6.5A 8SOIC

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 6.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V, 28mOhm @ 6.5A, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V, 16nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V, 760pF @ 15V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
package: -
Request a Quote
-
30V
6A (Ta), 6.5A (Ta)
30mOhm @ 6A, 10V, 28mOhm @ 6.5A, 10V
2.4V @ 250µA
6nC @ 10V, 16nC @ 10V
310pF @ 15V, 760pF @ 15V
2W
-55°C ~ 150°C
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
2N7002DW-7-F-79
Diodes Incorporated

MOSFET 2N-CH 60V SOT-363

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
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ECH8661-TL-HX
onsemi

MOSFET

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
Request a Quote
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