Pagina 173 - Transistors - FET's, MOSFET's - Arrays | Discrete halfgeleiderproducten | Heisener Electronics
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Transistors - FET's, MOSFET's - Arrays

Archief 5.684
Pagina  173/203
Afbeelding
Onderdeelnummer
Fabrikant
Omschrijving
package
Voorraad
Aantal
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
ECH8662-TL-HX
ON Semiconductor

MOSFET N-CH ECH8

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
Voorraad2.512
-
-
-
-
-
-
-
-
-
-
-
-
AON7804_102
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 9A 8DFN

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 9A
  • Rds On (Max) @ Id, Vgs: 21 mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 888pF @ 15V
  • Power - Max: 3.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerSMD, Flat Leads
  • Supplier Device Package: 8-DFN (3x3)
package: 8-PowerSMD, Flat Leads
Voorraad3.584
Logic Level Gate
30V
9A
21 mOhm @ 8A, 10V
2.4V @ 250µA
18nC @ 10V
888pF @ 15V
3.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerSMD, Flat Leads
8-DFN (3x3)
hot SI7842DP-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 6.3A PPAK SO-8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6.3A
  • Rds On (Max) @ Id, Vgs: 22 mOhm @ 7.5A, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.4W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? SO-8 Dual
  • Supplier Device Package: PowerPAK? SO-8 Dual
package: PowerPAK? SO-8 Dual
Voorraad55.824
Logic Level Gate
30V
6.3A
22 mOhm @ 7.5A, 10V
2.4V @ 250µA
20nC @ 10V
-
1.4W
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SO-8 Dual
PowerPAK? SO-8 Dual
NTZD3156CT2G
ON Semiconductor

MOSFET N/P-CH 20V SOT-563

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 540mA, 430mA
  • Rds On (Max) @ Id, Vgs: 550 mOhm @ 540mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 72pF @ 16V
  • Power - Max: 250mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
package: SOT-563, SOT-666
Voorraad4.032
Logic Level Gate
20V
540mA, 430mA
550 mOhm @ 540mA, 4.5V
1V @ 250µA
2.5nC @ 4.5V
72pF @ 16V
250mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
hot SI7960DP-T1-E3
Vishay Siliconix

MOSFET 2N-CH 60V 6.2A PPAK SO-8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 6.2A
  • Rds On (Max) @ Id, Vgs: 21 mOhm @ 9.7A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.4W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? SO-8 Dual
  • Supplier Device Package: PowerPAK? SO-8 Dual
package: PowerPAK? SO-8 Dual
Voorraad15.120
Logic Level Gate
60V
6.2A
21 mOhm @ 9.7A, 10V
3V @ 250µA
75nC @ 10V
-
1.4W
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SO-8 Dual
PowerPAK? SO-8 Dual
hot SI6943BDQ-T1-E3
Vishay Siliconix

MOSFET 2P-CH 12V 2.3A 8TSSOP

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 2.3A
  • Rds On (Max) @ Id, Vgs: 80 mOhm @ 2.5A, 4.5V
  • Vgs(th) (Max) @ Id: 800mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 800mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
package: 8-TSSOP (0.173", 4.40mm Width)
Voorraad104.520
Logic Level Gate
12V
2.3A
80 mOhm @ 2.5A, 4.5V
800mV @ 250µA
10nC @ 4.5V
-
800mW
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
NTJD2152PT4
ON Semiconductor

MOSFET 2P-CH 8V 0.775A SOT-363

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 8V
  • Current - Continuous Drain (Id) @ 25°C: 775mA
  • Rds On (Max) @ Id, Vgs: 300 mOhm @ 570mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 8V
  • Power - Max: 270mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-88/SC70-6/SOT-363
package: 6-TSSOP, SC-88, SOT-363
Voorraad2.672
Logic Level Gate
8V
775mA
300 mOhm @ 570mA, 4.5V
1V @ 250µA
4nC @ 4.5V
225pF @ 8V
270mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-88/SC70-6/SOT-363
hot SLA5041
Sanken

MOSFET 4N-CH 200V 10A 12SIP

  • FET Type: 4 N-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 10A
  • Rds On (Max) @ Id, Vgs: 175 mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 10V
  • Power - Max: 5W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 12-SIP, Exposed Tab
  • Supplier Device Package: 12-SIP
package: 12-SIP, Exposed Tab
Voorraad6.288
Logic Level Gate
200V
10A
175 mOhm @ 5A, 10V
4V @ 1mA
-
850pF @ 10V
5W
150°C (TJ)
Through Hole
12-SIP, Exposed Tab
12-SIP
ALD1101ASAL
Advanced Linear Devices Inc.

MOSFET 2N-CH 10.6V 8SOIC

  • FET Type: 2 N-Channel (Dual) Matched Pair
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 10.6V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 75 Ohm @ 5V
  • Vgs(th) (Max) @ Id: 1V @ 10µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 500mW
  • Operating Temperature: 0°C ~ 70°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad5.648
Standard
10.6V
-
75 Ohm @ 5V
1V @ 10µA
-
-
500mW
0°C ~ 70°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
APTC60TDUM35PG
Microsemi Corporation

MOSFET 6N-CH 600V 72A SP6-P

  • FET Type: 6 N-Channel (3-Phase Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 72A
  • Rds On (Max) @ Id, Vgs: 35 mOhm @ 72A, 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 5.4mA
  • Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
  • Power - Max: 416W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP6
  • Supplier Device Package: SP6-P
package: SP6
Voorraad7.056
Standard
600V
72A
35 mOhm @ 72A, 10V
3.9V @ 5.4mA
518nC @ 10V
14000pF @ 25V
416W
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6-P
ALD1107SBL
Advanced Linear Devices Inc.

MOSFET 4P-CH 10.6V 14SOIC

  • FET Type: 4 P-Channel, Matched Pair
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 10.6V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 1800 Ohm @ 5V
  • Vgs(th) (Max) @ Id: 1V @ 1µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V
  • Power - Max: 500mW
  • Operating Temperature: 0°C ~ 70°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 14-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 14-SOIC
package: 14-SOIC (0.154", 3.90mm Width)
Voorraad6.640
Standard
10.6V
-
1800 Ohm @ 5V
1V @ 1µA
-
3pF @ 5V
500mW
0°C ~ 70°C (TJ)
Surface Mount
14-SOIC (0.154", 3.90mm Width)
14-SOIC
BSO211PNTMA1
Infineon Technologies

MOSFET 2P-CH 20V 4.7A 8SOIC

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.7A
  • Rds On (Max) @ Id, Vgs: 67 mOhm @ 4.7A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs: 23.9nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 15V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: P-DSO-8
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad4.992
Logic Level Gate
20V
4.7A
67 mOhm @ 4.7A, 4.5V
1.2V @ 25µA
23.9nC @ 4.5V
920pF @ 15V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
P-DSO-8
DMTH4007SPD-13
Diodes Incorporated

MOSFET BVDSS: 31V 40V POWERDI506

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 14.2A
  • Rds On (Max) @ Id, Vgs: 8.6 mOhm @ 17A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 41.9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2026pF @ 30V
  • Power - Max: 2.6W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: PowerDI5060-8
package: 8-PowerTDFN
Voorraad7.152
Standard
40V
14.2A
8.6 mOhm @ 17A, 10V
4V @ 250µA
41.9nC @ 10V
2026pF @ 30V
2.6W
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerTDFN
PowerDI5060-8
hot TT8J11TCR
Rohm Semiconductor

MOSFET 2P-CH 12V 3.5A TSST8

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate, 1.5V Drive
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A
  • Rds On (Max) @ Id, Vgs: 43 mOhm @ 3.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 6V
  • Power - Max: 650mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 8-TSST
package: 8-SMD, Flat Lead
Voorraad86.508
Logic Level Gate, 1.5V Drive
12V
3.5A
43 mOhm @ 3.5A, 4.5V
1V @ 1mA
22nC @ 4.5V
2600pF @ 6V
650mW
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
8-TSST
hot SI6954ADQ-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 3.1A 8TSSOP

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.1A
  • Rds On (Max) @ Id, Vgs: 53 mOhm @ 3.4A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 830mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
package: 8-TSSOP (0.173", 4.40mm Width)
Voorraad9.696
Logic Level Gate
30V
3.1A
53 mOhm @ 3.4A, 10V
1V @ 250µA (Min)
16nC @ 10V
-
830mW
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
hot SIA914ADJ-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 20V 4.5A SC70-6L

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A
  • Rds On (Max) @ Id, Vgs: 43 mOhm @ 3.7A, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 10V
  • Power - Max: 7.8W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? SC-70-6 Dual
  • Supplier Device Package: PowerPAK? SC-70-6 Dual
package: PowerPAK? SC-70-6 Dual
Voorraad42.360
Logic Level Gate
20V
4.5A
43 mOhm @ 3.7A, 4.5V
900mV @ 250µA
12.5nC @ 8V
470pF @ 10V
7.8W
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SC-70-6 Dual
PowerPAK? SC-70-6 Dual
hot SI4946BEY-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 60V 6.5A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 6.5A
  • Rds On (Max) @ Id, Vgs: 41 mOhm @ 5.3A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 30V
  • Power - Max: 3.7W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad14.088
Logic Level Gate
60V
6.5A
41 mOhm @ 5.3A, 10V
3V @ 250µA
25nC @ 10V
840pF @ 30V
3.7W
-55°C ~ 175°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
AO4800BL
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 6.9A 8SOIC

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta)
  • Rds On (Max) @ Id, Vgs: 27mOhm @ 6.9A, 10V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V
  • Power - Max: 1.9W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
package: -
Request a Quote
-
30V
6.9A (Ta)
27mOhm @ 6.9A, 10V
1.5V @ 250µA
12nC @ 4.5V
1100pF @ 15V
1.9W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
SQJ202EP-T2_GE3
Vishay Siliconix

MOSFET 2N-CH 12V 20A PPAK SO8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 60A (Tc)
  • Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V, 3.3mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 54nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 975pF @ 6V, 2525pF @ 6V
  • Power - Max: 27W (Tc), 48W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® SO-8 Dual
  • Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
package: -
Voorraad27.000
-
12V
20A (Tc), 60A (Tc)
6.5mOhm @ 15A, 10V, 3.3mOhm @ 20A, 10V
2V @ 250µA
22nC @ 10V, 54nC @ 10V
975pF @ 6V, 2525pF @ 6V
27W (Tc), 48W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® SO-8 Dual
PowerPAK® SO-8 Dual Asymmetric
PJT7801_R1_00001
Panjit International Inc.

MOSFET 2P-CH 20V 0.7A SOT363

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
  • Rds On (Max) @ Id, Vgs: 325mOhm @ 700mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 165pF @ 10V
  • Power - Max: 350mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
package: -
Voorraad25.710
-
20V
700mA (Ta)
325mOhm @ 700mA, 4.5V
1V @ 250µA
2.2nC @ 4.5V
165pF @ 10V
350mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
RFIS40N10LE
Harris Corporation

MOSFET N-CH 100V 40A

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
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PJS6830_S1_00001
Panjit International Inc.

MOSFET 2N-CH 20V 2A SOT23-6

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Rds On (Max) @ Id, Vgs: 150mOhm @ 2A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 92pF @ 10V
  • Power - Max: 1.25W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: SOT-23-6
package: -
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20V
2A (Ta)
150mOhm @ 2A, 4.5V
1V @ 250µA
1.8nC @ 4.5V
92pF @ 10V
1.25W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6
SOT-23-6
NTMFD1D4N02P1E
onsemi

MOSFET 2N-CH 25V 13A/74A 8PQFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 74A (Tc), 24A (Ta), 155A (Tc)
  • Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V, 1.1mOhm @ 37A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA, 2V @ 800µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 4.5V, 21.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1180pF @ 13V, 3603pF @ 13V
  • Power - Max: 960mW (Ta), 1W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerWDFN
  • Supplier Device Package: 8-PQFN (5x6)
package: -
Voorraad8.820
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25V
13A (Ta), 74A (Tc), 24A (Ta), 155A (Tc)
3.3mOhm @ 20A, 10V, 1.1mOhm @ 37A, 10V
2V @ 250µA, 2V @ 800µA
7.2nC @ 4.5V, 21.5nC @ 4.5V
1180pF @ 13V, 3603pF @ 13V
960mW (Ta), 1W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerWDFN
8-PQFN (5x6)
AOCR36330
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 40A 18RIGIDCSP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
  • Rds On (Max) @ Id, Vgs: 1.4mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 128nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 3.5W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 18-SMD, No Lead
  • Supplier Device Package: 18-RigidCSP (6.22x2.5)
package: -
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30V
40A (Ta)
1.4mOhm @ 6A, 10V
2V @ 250µA
128nC @ 10V
-
3.5W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
18-SMD, No Lead
18-RigidCSP (6.22x2.5)
PJX8803_R1_00001
Panjit International Inc.

MOSFET 2P-CH 20V 0.6A SOT563

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
  • Rds On (Max) @ Id, Vgs: 340mOhm @ 600mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 151pF @ 10V
  • Power - Max: 300mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
package: -
Voorraad10.845
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20V
600mA (Ta)
340mOhm @ 600mA, 4.5V
1V @ 250µA
2.2nC @ 4.5V
151pF @ 10V
300mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
NP29N04QUK-E1-AY
Renesas Electronics Corporation

MOSFET 2N-CH 40V 30A 8HSON

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Rds On (Max) @ Id, Vgs: 10.1mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 25V
  • Power - Max: 1W (Ta), 44W (Tc)
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerLDFN
  • Supplier Device Package: 8-HSON (5x5.4)
package: -
Voorraad7.500
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40V
30A (Tc)
10.1mOhm @ 15A, 10V
4V @ 250µA
29nC @ 10V
1500pF @ 25V
1W (Ta), 44W (Tc)
175°C
Surface Mount
8-PowerLDFN
8-HSON (5x5.4)
DI006H03SQ
Diotec Semiconductor

MOSFET SO8 N+P 30V 0.025OHM 150C

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 4.2A (Ta)
  • Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 10V, 50mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11.7nC @ 10V, 11.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 15V, 631pF @ 15V
  • Power - Max: 1.5W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
package: -
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30V
6A (Ta), 4.2A (Ta)
25mOhm @ 5A, 10V, 50mOhm @ 5A, 10V
2V @ 250µA
11.7nC @ 10V, 11.4nC @ 10V
590pF @ 15V, 631pF @ 15V
1.5W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
DMP31D1UVTQ-7
Diodes Incorporated

MOSFET BVDSS: 25V~30V TSOT26 T&R

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 760mA (Ta)
  • Rds On (Max) @ Id, Vgs: 1Ohm @ 400mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 54pF @ 15V
  • Power - Max: 500mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: TSOT-26
package: -
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30V
760mA (Ta)
1Ohm @ 400mA, 4.5V
1.1V @ 250µA
1.6nC @ 8V
54pF @ 15V
500mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
TSOT-26