Pagina 167 - Transistors - FET's, MOSFET's - Arrays | Discrete halfgeleiderproducten | Heisener Electronics
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Transistors - FET's, MOSFET's - Arrays

Archief 5.684
Pagina  167/203
Afbeelding
Onderdeelnummer
Fabrikant
Omschrijving
package
Voorraad
Aantal
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IRF9395MTR1PBF
Infineon Technologies

MOSFET 2P-CH 30V 14A DIRECTFET

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 14A
  • Rds On (Max) @ Id, Vgs: 7 mOhm @ 14A, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3241pF @ 15V
  • Power - Max: 2.1W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DirectFET? Isometric MC
  • Supplier Device Package: DIRECTFET? MC
package: DirectFET? Isometric MC
Voorraad6.960
Logic Level Gate
30V
14A
7 mOhm @ 14A, 10V
2.4V @ 50µA
64nC @ 10V
3241pF @ 15V
2.1W
-40°C ~ 150°C (TJ)
Surface Mount
DirectFET? Isometric MC
DIRECTFET? MC
hot IRF7101PBF
Infineon Technologies

MOSFET 2N-CH 20V 3.5A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A
  • Rds On (Max) @ Id, Vgs: 100 mOhm @ 1.8A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 15V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad6.032
Logic Level Gate
20V
3.5A
100 mOhm @ 1.8A, 10V
3V @ 250µA
15nC @ 10V
320pF @ 15V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot IRF7901D1TRPBF
Infineon Technologies

MOSFET 2N-CH 30V 6.2A 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6.2A
  • Rds On (Max) @ Id, Vgs: 38 mOhm @ 5A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 16V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad131.220
Logic Level Gate
30V
6.2A
38 mOhm @ 5A, 4.5V
1V @ 250µA
10.5nC @ 5V
780pF @ 16V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
EFC6617R-TF
ON Semiconductor

MOSFET 2N-CH EFCP

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
Voorraad3.312
-
-
-
-
-
-
-
-
-
-
-
-
AON3810
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 20V 8.5A 8-DFN

  • FET Type: 2 N-Channel (Dual) Common Drain
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 24 mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 10V
  • Power - Max: 2.5W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 8-DFN (2.9x2.3)
package: 8-SMD, Flat Lead
Voorraad5.424
Logic Level Gate
20V
-
24 mOhm @ 7A, 10V
1V @ 250µA
5.2nC @ 4.5V
280pF @ 10V
2.5W
-55°C ~ 150°C (TJ)
Surface Mount
8-SMD, Flat Lead
8-DFN (2.9x2.3)
hot NTZD5110NT5G
ON Semiconductor

MOSFET 2N-CH 60V 0.294A SOT563

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 294mA
  • Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 24.5pF @ 20V
  • Power - Max: 250mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
package: SOT-563, SOT-666
Voorraad51.120
Logic Level Gate
60V
294mA
1.6 Ohm @ 500mA, 10V
2.5V @ 250µA
0.7nC @ 4.5V
24.5pF @ 20V
250mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
hot MMDF2P02ER2G
ON Semiconductor

MOSFET 2P-CH 25V 2.5A 8SOIC

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A
  • Rds On (Max) @ Id, Vgs: 250 mOhm @ 2A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 16V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad413.352
Logic Level Gate
25V
2.5A
250 mOhm @ 2A, 10V
3V @ 250µA
15nC @ 10V
475pF @ 16V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
APTM50AM38SCTG
Microsemi Corporation

MOSFET 2N-CH 500V 90A SP4

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Silicon Carbide (SiC)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 90A
  • Rds On (Max) @ Id, Vgs: 45 mOhm @ 45A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 246nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 11200pF @ 25V
  • Power - Max: 694W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP4
  • Supplier Device Package: SP4
package: SP4
Voorraad4.576
Silicon Carbide (SiC)
500V
90A
45 mOhm @ 45A, 10V
5V @ 5mA
246nC @ 10V
11200pF @ 25V
694W
-40°C ~ 150°C (TJ)
Chassis Mount
SP4
SP4
SMA5112
Sanken

MOSFET 6N-CH 250V 7A 12-SIP

  • FET Type: 6 N-Channel (3-Phase Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 7A
  • Rds On (Max) @ Id, Vgs: 500 mOhm @ 3.5A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 10V
  • Power - Max: 4W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 12-SIP, Exposed Tab
  • Supplier Device Package: 12-SIP
package: 12-SIP, Exposed Tab
Voorraad3.744
Standard
250V
7A
500 mOhm @ 3.5A, 10V
4V @ 1mA
-
450pF @ 10V
4W
150°C (TJ)
Through Hole
12-SIP, Exposed Tab
12-SIP
hot FDG1024NZ
Fairchild/ON Semiconductor

MOSFET 2N-CH 20V 1.2A SC70-6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.2A
  • Rds On (Max) @ Id, Vgs: 175 mOhm @ 1.2A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 2.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 10V
  • Power - Max: 300mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-70-6
package: 6-TSSOP, SC-88, SOT-363
Voorraad758.196
Logic Level Gate
20V
1.2A
175 mOhm @ 1.2A, 4.5V
1V @ 250µA
2.6nC @ 4.5V
150pF @ 10V
300mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-70-6
hot NTHD4102PT1G
ON Semiconductor

MOSFET 2P-CH 20V 2.9A CHIPFET

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.9A
  • Rds On (Max) @ Id, Vgs: 80 mOhm @ 2.9A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 16V
  • Power - Max: 1.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: ChipFET?
package: 8-SMD, Flat Lead
Voorraad1.423.812
Logic Level Gate
20V
2.9A
80 mOhm @ 2.9A, 4.5V
1.5V @ 250µA
8.6nC @ 4.5V
750pF @ 16V
1.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-SMD, Flat Lead
ChipFET?
AON6994
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 19A/26A

  • FET Type: 2 N-Channel (Dual) Asymmetrical
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 19A, 26A
  • Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V
  • Power - Max: 3.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerWDFN
  • Supplier Device Package: 8-DFN-EP (5x6)
package: 8-PowerWDFN
Voorraad6.096
Logic Level Gate
30V
19A, 26A
5.2 mOhm @ 20A, 10V
2.2V @ 250µA
13nC @ 10V
820pF @ 15V
3.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerWDFN
8-DFN-EP (5x6)
STS5DPF20L
STMicroelectronics

MOSFET 2P-CH 20V 5A 8SOIC

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5A
  • Rds On (Max) @ Id, Vgs: 55 mOhm @ 2.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 16V
  • Power - Max: 1.6W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad21.804
Logic Level Gate
20V
5A
55 mOhm @ 2.5A, 10V
2.5V @ 250µA
16nC @ 5V
1350pF @ 16V
1.6W
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
SI7501DN-T1-GE3
Vishay Siliconix

MOSFET N/P-CH 30V 5.4A 1212-8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5.4A, 4.5A
  • Rds On (Max) @ Id, Vgs: 35mOhm @ 7.7A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.6W
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® 1212-8 Dual
  • Supplier Device Package: PowerPAK® 1212-8 Dual
package: -
Request a Quote
Logic Level Gate
30V
5.4A, 4.5A
35mOhm @ 7.7A, 10V
3V @ 250µA
14nC @ 10V
-
1.6W
-
Surface Mount
PowerPAK® 1212-8 Dual
PowerPAK® 1212-8 Dual
SP8K52HZGTB
Rohm Semiconductor

MOSFET 2N-CH 100V 3A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
  • Rds On (Max) @ Id, Vgs: 170mOhm @ 3A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V
  • Power - Max: 2W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
package: -
Voorraad7.062
-
100V
3A (Ta)
170mOhm @ 3A, 10V
2.5V @ 1mA
8.5nC @ 5V
610pF @ 25V
2W (Ta)
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
DMP2040USD-13
Diodes Incorporated

MOSFET 2P-CH 20V 6.5A/12A 8SO

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 12A (Tc)
  • Rds On (Max) @ Id, Vgs: 33mOhm @ 8.9A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 19nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 834pF @ 10V
  • Power - Max: 1.1W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
package: -
Voorraad4.950
-
20V
6.5A (Ta), 12A (Tc)
33mOhm @ 8.9A, 4.5V
1.5V @ 250µA
19nC @ 8V
834pF @ 10V
1.1W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
VEC2315-TL-H
onsemi

MOSFET 2P-CH 60V 2.5A SOT28

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A
  • Rds On (Max) @ Id, Vgs: 137mOhm @ 1.5A, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 20V
  • Power - Max: 1W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: SOT-28FL/VEC8
package: -
Request a Quote
Logic Level Gate
60V
2.5A
137mOhm @ 1.5A, 10V
-
11nC @ 10V
420pF @ 20V
1W
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
SOT-28FL/VEC8
NVMFD5C446NT1G
onsemi

MOSFET 2N-CH 40V 24A/127A 8DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 127A (Tc)
  • Rds On (Max) @ Id, Vgs: 2.9mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2450pF @ 25V
  • Power - Max: 3.2W (Ta), 89W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
package: -
Voorraad4.500
-
40V
24A (Ta), 127A (Tc)
2.9mOhm @ 30A, 10V
3.5V @ 250µA
38nC @ 10V
2450pF @ 25V
3.2W (Ta), 89W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerTDFN
8-DFN (5x6) Dual Flag (SO8FL-Dual)
MSCSM120HM31TBL2NG
Microchip Technology

SIC 4N-CH 1200V 79A

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 79A
  • Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
  • Vgs(th) (Max) @ Id: 2.8V @ 3mA
  • Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
  • Power - Max: 310W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
package: -
Request a Quote
-
1200V (1.2kV)
79A
31mOhm @ 40A, 20V
2.8V @ 3mA
232nC @ 20V
3020pF @ 1000V
310W
-55°C ~ 175°C (TJ)
Chassis Mount
Module
-
PJX8805_R1_00001
Panjit International Inc.

MOSFET 2P-CH 30V 0.5A SOT563

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
  • Rds On (Max) @ Id, Vgs: 390mOhm @ 500mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 137pF @ 15V
  • Power - Max: 300mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
package: -
Request a Quote
-
30V
500mA (Ta)
390mOhm @ 500mA, 4.5V
1.3V @ 250µA
1.6nC @ 4.5V
137pF @ 15V
300mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
IRF7342QTRPBF
Infineon Technologies

MOSFET 2P-CH 55V 3.4A 8SOIC

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 3.4A
  • Rds On (Max) @ Id, Vgs: 105mOhm @ 3.4A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 25V
  • Power - Max: 2W
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
package: -
Request a Quote
Logic Level Gate
55V
3.4A
105mOhm @ 3.4A, 10V
1V @ 250µA
38nC @ 10V
690pF @ 25V
2W
-
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
SI7844DP-T1-E3
Vishay Siliconix

MOSFET 2N-CH 30V 6.4A PPAK SO-8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6.4A
  • Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.4W
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® SO-8 Dual
  • Supplier Device Package: PowerPAK® SO-8 Dual
package: -
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Logic Level Gate
30V
6.4A
22mOhm @ 10A, 10V
2.4V @ 250µA
20nC @ 10V
-
1.4W
-
Surface Mount
PowerPAK® SO-8 Dual
PowerPAK® SO-8 Dual
FW282-V-TL-E
onsemi

NCH+NCH 4V DRIVE SERIES

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
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-
-
-
-
-
-
-
-
-
-
-
-
IRFHM792TR2PBF
Infineon Technologies

MOSFET 2N-CH 100V 2.3A 8PQFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 2.3A
  • Rds On (Max) @ Id, Vgs: 195mOhm @ 2.9A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 10µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 251pF @ 25V
  • Power - Max: 2.3W
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: 8-PQFN-Dual (3.3x3.3)
package: -
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-
100V
2.3A
195mOhm @ 2.9A, 10V
4V @ 10µA
6.3nC @ 10V
251pF @ 25V
2.3W
-
Surface Mount
8-PowerVDFN
8-PQFN-Dual (3.3x3.3)
DMTH4008LPDWQ-13
Diodes Incorporated

MOSFET 2N-CH 40V 10A PWRDI50

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 46.2A (Tc)
  • Rds On (Max) @ Id, Vgs: 12.3mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 881pF @ 20V
  • Power - Max: 2.67W (Ta), 39.4W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: PowerDI5060-8 (Type UXD)
package: -
Voorraad27.990
-
40V
10A (Ta), 46.2A (Tc)
12.3mOhm @ 20A, 10V
2.3V @ 250µA
12.3nC @ 10V
881pF @ 20V
2.67W (Ta), 39.4W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerTDFN
PowerDI5060-8 (Type UXD)
SH8KB6TB1
Rohm Semiconductor

MOSFET 2N-CH 40V 8.5A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 19.4mOhm @ 8.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 20V
  • Power - Max: 2W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
package: -
Voorraad43.392
-
40V
8.5A (Ta)
19.4mOhm @ 8.5A, 10V
2.5V @ 1mA
10.6nC @ 10V
530pF @ 20V
2W (Ta)
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
BSC112N06LDATMA1
Infineon Technologies

MOSFET 2N-CH 60V 20A 8TDSON

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Rds On (Max) @ Id, Vgs: 11.2mOhm @ 17A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 28µA
  • Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4020pF @ 30V
  • Power - Max: 65W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PG-TDSON-8-4
package: -
Voorraad36.963
Logic Level Gate
60V
20A (Tc)
11.2mOhm @ 17A, 10V
2.2V @ 28µA
55nC @ 10V
4020pF @ 30V
65W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerVDFN
PG-TDSON-8-4
MSCSM70XM45CTYZBNMG
Microchip Technology

PM-MOSFET-SIC-SBD-6HPD

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 700V
  • Current - Continuous Drain (Id) @ 25°C: 52A (Tc), 110A (Tc)
  • Rds On (Max) @ Id, Vgs: 44mOhm @ 30A, 20V, 19mOhm @ 40A, 20V
  • Vgs(th) (Max) @ Id: 2.7V @ 2mA, 2.4V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 99nC @ 20V, 215nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2010pF @ 700V, 4500pF @ 700V
  • Power - Max: 141W (Tc), 292W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
package: -
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-
700V
52A (Tc), 110A (Tc)
44mOhm @ 30A, 20V, 19mOhm @ 40A, 20V
2.7V @ 2mA, 2.4V @ 4mA
99nC @ 20V, 215nC @ 20V
2010pF @ 700V, 4500pF @ 700V
141W (Tc), 292W (Tc)
-55°C ~ 175°C (TJ)
Chassis Mount
Module
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