Transistoren - Bipolair (BJT) - RF

BFS 483 E6327

Infineon Technologies

TRANSISTOR RF NPN 12V SOT-363

• Transistor Type: 2 NPN (Dual)
• Voltage - Collector Emitter Breakdown (Max): 12V
• Frequency - Transition: 8GHz
• Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz
• Gain: 19dB
• Power - Max: 450mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V
• Current - Collector (Ic) (Max): 65mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-VSSOP, SC-88, SOT-363
• Supplier Device Package: PG-SOT363-6

package: 6-VSSOP, SC-88, SOT-363

NE46134-T1-QR-AZ

CEL

SAME AS 2SC4536 NPN SILICON MEDI

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 15V
• Frequency - Transition: 5.5GHz
• Noise Figure (dB Typ @ f): 1.5dB ~ 2dB @ 500MHz ~ 1GHz
• Gain: 7dB
• Power - Max: 2W
• DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 10V
• Current - Collector (Ic) (Max): 250mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-243AA
• Supplier Device Package: SOT-89

package: TO-243AA

2SC5750-T1-A

CEL

RF TRANSISTOR NPN SOT-343

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 6V
• Frequency - Transition: 15GHz
• Noise Figure (dB Typ @ f): 1.7dB @ 2GHz
• Gain: 15dB
• Power - Max: 200mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 20mA, 3V
• Current - Collector (Ic) (Max): 50mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-82A, SOT-343
• Supplier Device Package: SOT-343

package: SC-82A, SOT-343

2SC3585-T1B-A

CEL

RF TRANSISTOR NPN SOT-23

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 10V
• Frequency - Transition: 10GHz
• Noise Figure (dB Typ @ f): 1.8dB @ 2GHz
• Gain: 9dB
• Power - Max: 200mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 6V
• Current - Collector (Ic) (Max): 35mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23

package: TO-236-3, SC-59, SOT-23-3

SD1013

Microsemi Corporation

TRANS RF BIPO 13W 1A M135

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 35V
• Frequency - Transition: 150MHz
• Noise Figure (dB Typ @ f): -
• Gain: 10dB
• Power - Max: 13W
• DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 200mA, 5V
• Current - Collector (Ic) (Max): 1A
• Operating Temperature: 200°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: M135
• Supplier Device Package: M135

package: M135

MS1406

Microsemi Corporation

TRANS RF BIPO 30W 3A M135

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 35V
• Frequency - Transition: 175MHz
• Noise Figure (dB Typ @ f): -
• Gain: 8.2dB
• Power - Max: 30W
• DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 200mA, 5V
• Current - Collector (Ic) (Max): 3A
• Operating Temperature: 200°C (TJ)
• Mounting Type: Chassis, Stud Mount
• Package / Case: M135
• Supplier Device Package: M135

package: M135

MRF545

Microsemi Corporation

TRANS RF BIPO 3.5W 400MA TO39

• Transistor Type: PNP
• Voltage - Collector Emitter Breakdown (Max): 70V
• Frequency - Transition: 1GHz ~ 1.4GHz
• Noise Figure (dB Typ @ f): -
• Gain: 14dB
• Power - Max: 3.5W
• DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 50mA, 6V
• Current - Collector (Ic) (Max): 400mA
• Operating Temperature: -
• Mounting Type: Through Hole
• Package / Case: TO-205AD, TO-39-3 Metal Can
• Supplier Device Package: TO-39

package: TO-205AD, TO-39-3 Metal Can

MRF5812GR1

Microsemi Corporation

TRANS NPN 15V 200MA 8-SOIC

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 15V
• Frequency - Transition: 5GHz
• Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 500MHz
• Gain: 13dB ~ 15.5dB
• Power - Max: 1.25W
• DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
• Current - Collector (Ic) (Max): 200mA
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SO

package: 8-SOIC (0.154", 3.90mm Width)

MRF581

Microsemi Corporation

TRANS NPN 18V 200MA MACRO X

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 18V
• Frequency - Transition: 5GHz
• Noise Figure (dB Typ @ f): 3dB ~ 3.5dB @ 500MHz
• Gain: 13dB ~ 15.5dB
• Power - Max: 1.25W
• DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
• Current - Collector (Ic) (Max): 200mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Micro-X ceramic (84C)
• Supplier Device Package: Micro-X ceramic (84C)

package: Micro-X ceramic (84C)

MPSH10RLRPG

ON Semiconductor

TRANS NPN VHF/UHF SS 25V TO-92

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 25V
• Frequency - Transition: 650MHz
• Noise Figure (dB Typ @ f): -
• Gain: -
• Power - Max: 350mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
• Current - Collector (Ic) (Max): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
• Supplier Device Package: TO-92-3

package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

AT-42036-TR1G

Broadcom Limited

TRANS NPN BIPO 12V 80MA 36-SMD

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 12V
• Frequency - Transition: 8GHz
• Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 2GHz ~ 4GHz
• Gain: 10dB ~ 13.5dB
• Power - Max: 600mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 35mA, 8V
• Current - Collector (Ic) (Max): 80mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 4-SMD (36 micro-X)
• Supplier Device Package: 36 micro-X

package: 4-SMD (36 micro-X)

AT-41511-BLKG

Broadcom Limited

TRANS NPN BIPO 12V 50MA SOT-143

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 12V
• Frequency - Transition: -
• Noise Figure (dB Typ @ f): 1dB ~ 1.7dB @ 900MHz ~ 2.4GHz
• Gain: 11dB ~ 15.5dB
• Power - Max: 225mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
• Current - Collector (Ic) (Max): 50mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-253-4, TO-253AA
• Supplier Device Package: SOT-143

package: TO-253-4, TO-253AA

AT-64020

Broadcom Limited

TRANS NPN BIPO 20V 200MA 200-SMD

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 20V
• Frequency - Transition: -
• Noise Figure (dB Typ @ f): -
• Gain: -
• Power - Max: 3W
• DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 110mA, 8V
• Current - Collector (Ic) (Max): 200mA
• Operating Temperature: 200°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 4-SMD (200 mil BeO)
• Supplier Device Package: -

package: 4-SMD (200 mil BeO)

HFA3128R96

Intersil

IC TRANS ARRAY 5X PND 16QFN

• Transistor Type: 5 PNP
• Voltage - Collector Emitter Breakdown (Max): 15V
• Frequency - Transition: 5.5GHz
• Noise Figure (dB Typ @ f): 3.5dB @ 1GHz
• Gain: -
• Power - Max: 150mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 2V
• Current - Collector (Ic) (Max): 65mA
• Operating Temperature: 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 16-VFQFN Exposed Pad
• Supplier Device Package: 16-QFN (3x3)

package: 16-VFQFN Exposed Pad

2N5770_D75Z

Fairchild/ON Semiconductor

TRANSISTOR RF NPN 15V 50MA TO-92

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 15V
• Frequency - Transition: -
• Noise Figure (dB Typ @ f): 6dB @ 60MHz
• Gain: 15dB
• Power - Max: 350mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 8mA, 10V
• Current - Collector (Ic) (Max): 50mA
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)
• Supplier Device Package: TO-92-3

package: TO-226-3, TO-92-3 (TO-226AA)

BF771E6327HTSA1

Infineon Technologies

TRANSISTOR RF NPN 12V SOT-23

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 12V
• Frequency - Transition: 8GHz
• Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
• Gain: 10dB ~ 15dB
• Power - Max: 580mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
• Current - Collector (Ic) (Max): 80mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: PG-SOT23-3

package: TO-236-3, SC-59, SOT-23-3

ITC1100

Microsemi Corporation

TRANS RF BIPO 65V 80A 55SW1

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 65V
• Frequency - Transition: 1.03GHz
• Noise Figure (dB Typ @ f): -
• Gain: 10dB ~ 10.5dB
• Power - Max: 3400W
• DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V
• Current - Collector (Ic) (Max): 80A
• Operating Temperature: 200°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: 55SW
• Supplier Device Package: 55SW

package: 55SW

MDS500L

Microsemi Corporation

TRANS RF BIPO 833W 24A 55ST1

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 70V
• Frequency - Transition: 1.03GHz ~ 1.09GHz
• Noise Figure (dB Typ @ f): -
• Gain: 9.2dB
• Power - Max: 833W
• DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V
• Current - Collector (Ic) (Max): 24A
• Operating Temperature: 200°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: 55ST
• Supplier Device Package: 55ST

package: 55ST

DME400A

Microsemi Corporation

TRANSISTOR BIPO 55AW-1

• Transistor Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Frequency - Transition: -
• Noise Figure (dB Typ @ f): -
• Gain: -
• Power - Max: -
• DC Current Gain (hFE) (Min) @ Ic, Vce: -
• Current - Collector (Ic) (Max): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

package: -

MDS60L

Microsemi Corporation

TRANS RF BIPO 120W 4A 55AW1

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 65V
• Frequency - Transition: 1.03GHz ~ 1.09GHz
• Noise Figure (dB Typ @ f): -
• Gain: 10dB
• Power - Max: 120W
• DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V
• Current - Collector (Ic) (Max): 4A
• Operating Temperature: 200°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: 55AW
• Supplier Device Package: 55AW

package: 55AW

2SC5095-O(TE85L,F)

Toshiba Semiconductor and Storage

TRANSISTOR NPN MM-USM

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 10V
• Frequency - Transition: 10GHz
• Noise Figure (dB Typ @ f): 1.8dB @ 2GHz
• Gain: 13dB ~ 7dB
• Power - Max: 100mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 7mA, 6V
• Current - Collector (Ic) (Max): 15mA
• Operating Temperature: 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: SC-70

package: SC-70, SOT-323

55GN01CA-TB-E

ON Semiconductor

TRANS NPN BIPOLAR 10V 70MA CP

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 10V
• Frequency - Transition: 4.5GHz
• Noise Figure (dB Typ @ f): 1.9dB @ 1GHz
• Gain: 9.5dB
• Power - Max: 200mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
• Current - Collector (Ic) (Max): 70mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: 3-CP

package: TO-236-3, SC-59, SOT-23-3

KST10MTF

Fairchild/ON Semiconductor

TRANS NPN 25V 350MW SOT23

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 25V
• Frequency - Transition: 650MHz
• Noise Figure (dB Typ @ f): -
• Gain: -
• Power - Max: 350mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
• Current - Collector (Ic) (Max): -
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

package: TO-236-3, SC-59, SOT-23-3

2SC5508-T2B-A

Renesas Electronics Corporation

NPN RF TRANSISTOR

• Transistor Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Frequency - Transition: -
• Noise Figure (dB Typ @ f): -
• Gain: -
• Power - Max: -
• DC Current Gain (hFE) (Min) @ Ic, Vce: -
• Current - Collector (Ic) (Max): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

package: -

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MT3S111P-TE12L-F

Toshiba Semiconductor and Storage

RF TRANS NPN 6V 8GHZ PW-MINI

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 6V
• Frequency - Transition: 8GHz
• Noise Figure (dB Typ @ f): 1.25dB @ 1GHz
• Gain: 10.5dB
• Power - Max: 1W
• DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V
• Current - Collector (Ic) (Max): 100mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-243AA
• Supplier Device Package: PW-MINI

package: -

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2SC5008-A

CEL

RF TRANS NPN 10V 8GHZ SOT523

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 10V
• Frequency - Transition: 8GHz
• Noise Figure (dB Typ @ f): 1.9dB @ 2GHz
• Gain: 7.5dB
• Power - Max: 125mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 3V
• Current - Collector (Ic) (Max): 35mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-523
• Supplier Device Package: -

package: -

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PN3563-PBFREE

Central Semiconductor Corp

RF TRANS NPN 12V TO92

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 12V
• Frequency - Transition: -
• Noise Figure (dB Typ @ f): -
• Gain: -
• Power - Max: -
• DC Current Gain (hFE) (Min) @ Ic, Vce: -
• Current - Collector (Ic) (Max): -
• Operating Temperature: -
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)
• Supplier Device Package: TO-92-3

package: -

2N3496

Microchip Technology

SMALL-SIGNAL BJT

• Transistor Type: PNP
• Voltage - Collector Emitter Breakdown (Max): 80V
• Frequency - Transition: 250MHz
• Noise Figure (dB Typ @ f): -
• Gain: -
• Power - Max: 600mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 100mA, 10V
• Current - Collector (Ic) (Max): 100mA
• Operating Temperature: -65°C ~ 200°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-206AA, TO-18-3 Metal Can
• Supplier Device Package: TO-18 (TO-206AA)

package: -

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