Transistoren - Bipolair (BJT) - RF

BF 775 E6327

Infineon Technologies

TRANSISTOR RF NPN 15V SOT-23

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 15V
• Frequency - Transition: 5GHz
• Noise Figure (dB Typ @ f): 1.4dB ~ 2dB @ 900MHz ~ 1.8GHz
• Gain: 10.5dB ~ 16dB
• Power - Max: 280mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V
• Current - Collector (Ic) (Max): 45mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: PG-SOT23-3

package: TO-236-3, SC-59, SOT-23-3

NE67818-T1-A

CEL

RF TRANSISTOR NPN SOT-343

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 6V
• Frequency - Transition: 12GHz
• Noise Figure (dB Typ @ f): 1.7dB @ 2GHz
• Gain: 10dB
• Power - Max: 200mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 30mA, 3V
• Current - Collector (Ic) (Max): 100mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-82A, SOT-343
• Supplier Device Package: SOT-343

package: SC-82A, SOT-343

2SC5010-T1-A

CEL

RF TRANSISTOR NPN SOT-523

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 6V
• Frequency - Transition: 12GHz
• Noise Figure (dB Typ @ f): 1.5dB @ 2GHz
• Gain: 8.5dB
• Power - Max: 125mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 3V
• Current - Collector (Ic) (Max): 30mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-523
• Supplier Device Package: SOT-523

package: SOT-523

0105-50

Microsemi Corporation

TRANS RF BIPO 140W 500MHZ 55JT2

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 65V
• Frequency - Transition: 100MHz ~ 500MHz
• Noise Figure (dB Typ @ f): -
• Gain: 8.5dB ~ 10dB
• Power - Max: 140W
• DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
• Current - Collector (Ic) (Max): 7A
• Operating Temperature: 200°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: 55JT
• Supplier Device Package: 55JT

package: 55JT

MS2472

Microsemi Corporation

TRANS RF BIPO 1350W 40A M112

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 65V
• Frequency - Transition: 1.025GHz ~ 1.15GHz
• Noise Figure (dB Typ @ f): -
• Gain: 5.6dB
• Power - Max: 1350W
• DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 250mA, 5V
• Current - Collector (Ic) (Max): 40A
• Operating Temperature: 200°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: M112
• Supplier Device Package: M112

package: M112

BFR94AW,115

NXP

TRANS NPN 5GHZ SOT323

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 15V
• Frequency - Transition: 5GHz
• Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 1GHz ~ 2GHz
• Gain: -
• Power - Max: 300mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 15mA, 10V
• Current - Collector (Ic) (Max): 25mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: SOT-323-3

package: SC-70, SOT-323

PN5179_D26Z

Fairchild/ON Semiconductor

TRANS RF NPN 12V 50MA TO-92

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 12V
• Frequency - Transition: 2GHz
• Noise Figure (dB Typ @ f): 5dB @ 200MHz
• Gain: 15dB
• Power - Max: 350mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V
• Current - Collector (Ic) (Max): 50mA
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
• Supplier Device Package: TO-92-3

package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

MMBTH81_D87Z

Fairchild/ON Semiconductor

TRANS RF PNP 20V 50MA SOT-23

• Transistor Type: PNP
• Voltage - Collector Emitter Breakdown (Max): 20V
• Frequency - Transition: 600MHz
• Noise Figure (dB Typ @ f): -
• Gain: -
• Power - Max: 225mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
• Current - Collector (Ic) (Max): 50mA
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3 (TO-236)

package: TO-236-3, SC-59, SOT-23-3

UPA895TS-A

CEL

TRANSISTOR NPN DUAL 6-SMINI

• Transistor Type: 2 NPN (Dual)
• Voltage - Collector Emitter Breakdown (Max): 5.5V
• Frequency - Transition: 6.5GHz
• Noise Figure (dB Typ @ f): 1.9dB ~ 2.5dB @ 2GHz
• Gain: -
• Power - Max: 130mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 1V
• Current - Collector (Ic) (Max): 100mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-SMD, Flat Leads
• Supplier Device Package: 6-Super Lead-Less MiniMold

package: 6-SMD, Flat Leads

NE68539-T1-A

CEL

RF TRANSISTOR NPN SOT-143

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 6V
• Frequency - Transition: 12GHz
• Noise Figure (dB Typ @ f): 1.5dB @ 2GHz
• Gain: 11dB
• Power - Max: 180mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 3V
• Current - Collector (Ic) (Max): 30mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-253-4, TO-253AA
• Supplier Device Package: SOT-143

package: TO-253-4, TO-253AA

MPSH10

Fairchild/ON Semiconductor

TRANSISTOR NPN RF VHF/UHF TO-92

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 25V
• Frequency - Transition: 650MHz
• Noise Figure (dB Typ @ f): -
• Gain: -
• Power - Max: 350mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
• Current - Collector (Ic) (Max): 50mA
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)
• Supplier Device Package: TO-92-3

package: TO-226-3, TO-92-3 (TO-226AA)

BFG541,115

NXP

TRANS NPN 15V 9GHZ SOT223

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 15V
• Frequency - Transition: 9GHz
• Noise Figure (dB Typ @ f): 1.3dB ~ 2.4dB @ 900MHz
• Gain: -
• Power - Max: 650mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 40mA, 8V
• Current - Collector (Ic) (Max): 120mA
• Operating Temperature: 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-261-4, TO-261AA
• Supplier Device Package: SOT-223

package: TO-261-4, TO-261AA

BFG505,215

NXP

TRANS NPN 6V 18MA SOT343N

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 15V
• Frequency - Transition: 9GHz
• Noise Figure (dB Typ @ f): 1.2dB ~ 2.1dB @ 900MHz
• Gain: -
• Power - Max: 150mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 6V
• Current - Collector (Ic) (Max): 18mA
• Operating Temperature: 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-253-4, TO-253AA
• Supplier Device Package: SOT-143B

package: TO-253-4, TO-253AA

0510-50A

Microsemi Corporation

TRANS RF BIPO 50W 1000MHZ 55AV2

• Transistor Type: -
• Voltage - Collector Emitter Breakdown (Max): 27V
• Frequency - Transition: 500MHz ~ 1GHz
• Noise Figure (dB Typ @ f): -
• Gain: 7dB
• Power - Max: 50W
• DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V
• Current - Collector (Ic) (Max): 3.7A
• Operating Temperature: 200°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: 55AV
• Supplier Device Package: 55AV

package: 55AV

1517-20M

Microsemi Corporation

TRANS RF BIPO 175W 3A 55LV1

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 65V
• Frequency - Transition: 1.48GHz ~ 1.65GHz
• Noise Figure (dB Typ @ f): -
• Gain: 7.6dB ~ 9.3dB
• Power - Max: 175W
• DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V
• Current - Collector (Ic) (Max): 3A
• Operating Temperature: -
• Mounting Type: Chassis Mount
• Package / Case: 55LV-1
• Supplier Device Package: 55LV-1

package: 55LV-1

MS652S

Microsemi Corporation

TRANS RF BIPO 25W 2A M123

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 16V
• Frequency - Transition: 450MHz ~ 512MHz
• Noise Figure (dB Typ @ f): -
• Gain: 10dB
• Power - Max: 25W
• DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 200mA, 5V
• Current - Collector (Ic) (Max): 2A
• Operating Temperature: 200°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: M123
• Supplier Device Package: M123

package: M123

HFA3135IHZ96

Intersil

IC TRANS ARRAY PNP MATCH SOT23-6

• Transistor Type: 2 PNP (Dual)
• Voltage - Collector Emitter Breakdown (Max): 9V
• Frequency - Transition: 7GHz
• Noise Figure (dB Typ @ f): 5.2dB @ 900MHz
• Gain: -
• Power - Max: -
• DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 10mA, 2V
• Current - Collector (Ic) (Max): 26mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-23-6
• Supplier Device Package: SOT-23-6

package: SOT-23-6

BFU550AVL

NXP

TRANS RF NPN 12V 50MA TO-236AB

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 12V
• Frequency - Transition: 11GHz
• Noise Figure (dB Typ @ f): 1.4dB @ 1.8GHz
• Gain: 12dB
• Power - Max: 450mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 8V
• Current - Collector (Ic) (Max): 50mA
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: TO-236AB (SOT23)

package: TO-236-3, SC-59, SOT-23-3

MRF10350

M/A-Com Technology Solutions

TRANS NPN 350W 1025MHZ-1150MHZ

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 65V
• Frequency - Transition: -
• Noise Figure (dB Typ @ f): -
• Gain: 9dB
• Power - Max: 350W
• DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 5V
• Current - Collector (Ic) (Max): 31A
• Operating Temperature: 200°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: 355E-01
• Supplier Device Package: 355E-01, Style 1

package: 355E-01

2SC4093-T1-A

CEL

RF TRANSISTOR NPN SOT-143

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 12V
• Frequency - Transition: 7GHz
• Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
• Gain: 14.2dB
• Power - Max: 200mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
• Current - Collector (Ic) (Max): 100mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-253-4, TO-253AA
• Supplier Device Package: SOT-143

package: TO-253-4, TO-253AA

2SC2714-Y(TE85L,F)

Toshiba Semiconductor and Storage

TRANSISTOR NPN S-MINI

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 30V
• Frequency - Transition: 550MHz
• Noise Figure (dB Typ @ f): 2.5dB @ 100MHz
• Gain: 23dB
• Power - Max: 100mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 6V
• Current - Collector (Ic) (Max): 20mA
• Operating Temperature: 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: S-Mini

package: TO-236-3, SC-59, SOT-23-3

2SC2714-O(TE85L,F)

Toshiba Semiconductor and Storage

TRANS RF NPN 30V 550MHZ S-MINI

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 30V
• Frequency - Transition: 550MHz
• Noise Figure (dB Typ @ f): 2.5dB @ 100MHz
• Gain: 23dB
• Power - Max: 100mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 6V
• Current - Collector (Ic) (Max): 20mA
• Operating Temperature: 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: S-Mini

package: TO-236-3, SC-59, SOT-23-3

MPSH10RLRA

onsemi

TRANS NPN VHF/UHF SS 25V TO92

• Transistor Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Frequency - Transition: -
• Noise Figure (dB Typ @ f): -
• Gain: -
• Power - Max: -
• DC Current Gain (hFE) (Min) @ Ic, Vce: -
• Current - Collector (Ic) (Max): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

package: -

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2SC5010-A

CEL

RF TRANS NPN 6V 12GHZ SOT523

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 6V
• Frequency - Transition: 12GHz
• Noise Figure (dB Typ @ f): 1.5dB @ 2GHz
• Gain: 8.5dB
• Power - Max: 125mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 3V
• Current - Collector (Ic) (Max): 30mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-523
• Supplier Device Package: -

package: -

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S9018

EVVO

TRANS NPN 1V5 SOT23

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 15V
• Frequency - Transition: 800MHz
• Noise Figure (dB Typ @ f): -
• Gain: -
• Power - Max: 200mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 5V
• Current - Collector (Ic) (Max): 50mA
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23

package: -

2N3866-TRAY

Central Semiconductor Corp

RF TRANS NPN 30V 500MHZ TO39

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 30V
• Frequency - Transition: 500MHz
• Noise Figure (dB Typ @ f): -
• Gain: 10dB
• Power - Max: 5W
• DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 50mA, 5V
• Current - Collector (Ic) (Max): 400mA
• Operating Temperature: -65°C ~ 200°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-205AD, TO-39-3 Metal Can
• Supplier Device Package: TO-39

package: -

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SD1430-02

Microsemi Corporation

TRANSISTOR

• Transistor Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Frequency - Transition: -
• Noise Figure (dB Typ @ f): -
• Gain: -
• Power - Max: -
• DC Current Gain (hFE) (Min) @ Ic, Vce: -
• Current - Collector (Ic) (Max): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

package: -

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SD1330-05C

Microsemi Corporation

TRANSISTOR

• Transistor Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Frequency - Transition: -
• Noise Figure (dB Typ @ f): -
• Gain: -
• Power - Max: -
• DC Current Gain (hFE) (Min) @ Ic, Vce: -
• Current - Collector (Ic) (Max): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

package: -

Request a Quote