Transistoren - Bipolair (BJT) - RF

BFP650E6327HTSA1

Infineon Technologies

TRANSISTOR RF NPN 4.5V SOT-343

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 4.5V
• Frequency - Transition: 37GHz
• Noise Figure (dB Typ @ f): 0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz
• Gain: 10.5dB ~ 21.5dB
• Power - Max: 500mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 80mA, 3V
• Current - Collector (Ic) (Max): 150mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-82A, SOT-343
• Supplier Device Package: PG-SOT343-4

package: SC-82A, SOT-343

BFR 181 E6780

Infineon Technologies

TRANSISTOR RF NPN 12V SOT-23

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 12V
• Frequency - Transition: 8GHz
• Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
• Gain: 18.5dB
• Power - Max: 175mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 8V
• Current - Collector (Ic) (Max): 20mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: PG-SOT23-3

package: TO-236-3, SC-59, SOT-23-3

MRF559T

Microsemi Corporation

COMM/BIPOLAR TRANSISTOR

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 16V
• Frequency - Transition: 870MHz
• Noise Figure (dB Typ @ f): -
• Gain: 9.5dB
• Power - Max: 2W
• DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
• Current - Collector (Ic) (Max): 150mA
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

package: -

MRF323

M/A-Com Technology Solutions

TRANS RF NPN 33V 1.1A 244-04

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 33V
• Frequency - Transition: -
• Noise Figure (dB Typ @ f): -
• Gain: 11dB
• Power - Max: 20W
• DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V
• Current - Collector (Ic) (Max): 2.2A
• Operating Temperature: -
• Mounting Type: Chassis Mount
• Package / Case: 244-04
• Supplier Device Package: 244-04, STYLE 1

package: 244-04

MPS5179RLRPG

ON Semiconductor

TRANSISTOR NPN RF BIPO 12V TO-92

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 12V
• Frequency - Transition: 2GHz
• Noise Figure (dB Typ @ f): -
• Gain: -
• Power - Max: 200W
• DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V
• Current - Collector (Ic) (Max): 50mA
• Operating Temperature: -
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
• Supplier Device Package: TO-92-3

package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

NE85630-R25-A

CEL

RF TRANSISTOR NPN SOT-323

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 12V
• Frequency - Transition: 4.5GHz
• Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
• Gain: 9dB
• Power - Max: 150mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 7mA, 3V
• Current - Collector (Ic) (Max): 100mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: SOT-323

package: SC-70, SOT-323

KSC1393OTA

Fairchild/ON Semiconductor

TRANSISTOR NPN 30V 20MA TO-92

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 30V
• Frequency - Transition: 700MHz
• Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 200MHz
• Gain: 20dB ~ 24dB
• Power - Max: 250mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2mA, 10V
• Current - Collector (Ic) (Max): 20mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
• Supplier Device Package: TO-92-3

package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

MBC13900T1

NXP

IC TRANS NPN RF LOW NOISE SC70-4

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 6.5V
• Frequency - Transition: 15GHz
• Noise Figure (dB Typ @ f): 0.8dB ~ 1.1dB @ 900MHz ~ 1.9GHz
• Gain: 15dB ~ 22dB
• Power - Max: 188mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 2V
• Current - Collector (Ic) (Max): 20mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-82A, SOT-343
• Supplier Device Package: SOT-343

package: SC-82A, SOT-343

BFG591,115

NXP

TRANS NPN 15V 7GHZ SOT-223

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 15V
• Frequency - Transition: 7GHz
• Noise Figure (dB Typ @ f): -
• Gain: -
• Power - Max: 2W
• DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 70mA, 8V
• Current - Collector (Ic) (Max): 200mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-261-4, TO-261AA
• Supplier Device Package: SOT-223

package: TO-261-4, TO-261AA

BFQ 19S E6327

Infineon Technologies

TRANSISTOR RF NPN 15V SOT-89

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 15V
• Frequency - Transition: 5.5GHz
• Noise Figure (dB Typ @ f): 1.8dB ~ 3dB @ 900MHz ~ 1.8Ghz
• Gain: 7dB ~ 11.5dB
• Power - Max: 1W
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 70mA, 8V
• Current - Collector (Ic) (Max): 210mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-243AA
• Supplier Device Package: PG-SOT89

package: TO-243AA

BFP720FH6327XTSA1

Infineon Technologies

TRANS RF NPN 45GHZ 3.5V TSFP-4

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 4.7V
• Frequency - Transition: 45GHz
• Noise Figure (dB Typ @ f): 0.4dB ~ 1dB @ 150MHz ~ 10GHz
• Gain: 10.5dB ~ 28dB
• Power - Max: 100mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 13mA, 3V
• Current - Collector (Ic) (Max): 25mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 4-SMD, Flat Leads
• Supplier Device Package: 4-TSFP

package: 4-SMD, Flat Leads

MS2200

Microsemi Corporation

TRANS RF BIPO 1167W 43.2A MS102

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 65V
• Frequency - Transition: 400MHz ~ 500MHz
• Noise Figure (dB Typ @ f): -
• Gain: 9.7dB
• Power - Max: 1167W
• DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 5V
• Current - Collector (Ic) (Max): 43.2A
• Operating Temperature: 200°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: M102
• Supplier Device Package: M102

package: M102

1035MP

Microsemi Corporation

TRANS RF BIPO 125W 2.5A 55FW1

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 65V
• Frequency - Transition: 1.025GHz ~ 1.15GHz
• Noise Figure (dB Typ @ f): -
• Gain: 10dB ~ 10.5dB
• Power - Max: 125W
• DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V
• Current - Collector (Ic) (Max): 2.5A
• Operating Temperature: 200°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: 55FW-1
• Supplier Device Package: 55FW-1

package: 55FW-1

BFU580GX

NXP

TRANS RF NPN 12V 60MA SOT223

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 12V
• Frequency - Transition: 11GHz
• Noise Figure (dB Typ @ f): 1.4dB @ 1.8GHz
• Gain: 10.5dB
• Power - Max: 1W
• DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 30mA, 8V
• Current - Collector (Ic) (Max): 60mA
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-261-4, TO-261AA
• Supplier Device Package: SOT-223

package: TO-261-4, TO-261AA

MMBTH24-7

Diodes Incorporated

TRANS NPN VHF/UHF 40V SOT23-3

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 40V
• Frequency - Transition: 400MHz
• Noise Figure (dB Typ @ f): -
• Gain: -
• Power - Max: 300mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 8mA, 10V
• Current - Collector (Ic) (Max): 50mA
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

package: TO-236-3, SC-59, SOT-23-3

DSC9F0100L

Panasonic Electronic Components

RF TRANS NPN 10V 1.9GHZ SSMINI3

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 10V
• Frequency - Transition: 1.9GHz
• Noise Figure (dB Typ @ f): -
• Gain: -
• Power - Max: 125mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 5mA, 4V
• Current - Collector (Ic) (Max): 50mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-89, SOT-490
• Supplier Device Package: SSMini3-F3-B

package: SC-89, SOT-490

PBR941,215

NXP

TRANSISTOR NPN UHF 50MA SOT23

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 10V
• Frequency - Transition: 8GHz
• Noise Figure (dB Typ @ f): 1.4dB ~ 2dB @ 1GHz ~ 2GHz
• Gain: -
• Power - Max: 360mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 6V
• Current - Collector (Ic) (Max): 50mA
• Operating Temperature: 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: TO-236AB (SOT23)

package: TO-236-3, SC-59, SOT-23-3

BFU530AR

NXP

TRANS RF NPN 12V 40MA TO-236AB

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 12V
• Frequency - Transition: 11GHz
• Noise Figure (dB Typ @ f): 0.6dB @ 900MHz
• Gain: 18dB
• Power - Max: 450mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 8V
• Current - Collector (Ic) (Max): 40mA
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: TO-236AB (SOT23)

package: TO-236-3, SC-59, SOT-23-3

BFU520YX

NXP

TRANS RF NPN 12V 30MA 6TSSOP

• Transistor Type: 2 NPN (Dual)
• Voltage - Collector Emitter Breakdown (Max): 12V
• Frequency - Transition: 10GHz
• Noise Figure (dB Typ @ f): 0.65dB @ 900MHz
• Gain: 19dB
• Power - Max: 450mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 8V
• Current - Collector (Ic) (Max): 30mA
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: SOT-363

package: 6-TSSOP, SC-88, SOT-363

2SC5012-A

CEL

RF TRANS NPN 10V 9GHZ SOT343

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 10V
• Frequency - Transition: 9GHz
• Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
• Gain: 15dB
• Power - Max: 150mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 8V
• Current - Collector (Ic) (Max): 65mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-82A, SOT-343
• Supplier Device Package: -

package: -

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MS3455

Microsemi Corporation

RF POWER TRANSISTOR

• Transistor Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Frequency - Transition: -
• Noise Figure (dB Typ @ f): -
• Gain: -
• Power - Max: -
• DC Current Gain (hFE) (Min) @ Ic, Vce: -
• Current - Collector (Ic) (Max): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

package: -

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NPT1010P

MACOM Technology Solutions

TRANSISTOR

• Transistor Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Frequency - Transition: -
• Noise Figure (dB Typ @ f): -
• Gain: -
• Power - Max: -
• DC Current Gain (hFE) (Min) @ Ic, Vce: -
• Current - Collector (Ic) (Max): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

package: -

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2SC4988FRTR-E

Renesas Electronics Corporation

RF 0.1A, NPN

• Transistor Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Frequency - Transition: -
• Noise Figure (dB Typ @ f): -
• Gain: -
• Power - Max: -
• DC Current Gain (hFE) (Min) @ Ic, Vce: -
• Current - Collector (Ic) (Max): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

package: -

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42105

Microsemi Corporation

RF POWER TRANSISTOR

• Transistor Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Frequency - Transition: -
• Noise Figure (dB Typ @ f): -
• Gain: -
• Power - Max: -
• DC Current Gain (hFE) (Min) @ Ic, Vce: -
• Current - Collector (Ic) (Max): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

package: -

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2N3495

Microchip Technology

SMALL-SIGNAL BJT

• Transistor Type: PNP
• Voltage - Collector Emitter Breakdown (Max): 120V
• Frequency - Transition: 150MHz
• Noise Figure (dB Typ @ f): -
• Gain: -
• Power - Max: 400mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 10V
• Current - Collector (Ic) (Max): 100mA
• Operating Temperature: -65°C ~ 200°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-205AA, TO-5-3 Metal Can
• Supplier Device Package: TO-5AA

package: -

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PH3135-5M

MACOM Technology Solutions

TRANSISTOR,BIPOLAR,5W,3.10-3.50_

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 60V
• Frequency - Transition: 3.5GHz
• Noise Figure (dB Typ @ f): -
• Gain: 8.5dB
• Power - Max: 50W
• DC Current Gain (hFE) (Min) @ Ic, Vce: -
• Current - Collector (Ic) (Max): 700mA
• Operating Temperature: 200°C
• Mounting Type: Chassis Mount
• Package / Case: 2L-FLG
• Supplier Device Package: -

package: -

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2SC4095-A

CEL

RF TRANS NPN 10V 10GHZ SOT143

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 10V
• Frequency - Transition: 10GHz
• Noise Figure (dB Typ @ f): 1.8dB @ 2GHz
• Gain: 12dB
• Power - Max: 200mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 6V
• Current - Collector (Ic) (Max): 35mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-253-4, TO-253AA
• Supplier Device Package: -

package: -

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NESG250134-T1-AZ

CEL

TRANS NPN 900MHZ SOT-89

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 9.2V
• Frequency - Transition: 10GHz
• Noise Figure (dB Typ @ f): -
• Gain: 23dB
• Power - Max: 1.5W
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 3V
• Current - Collector (Ic) (Max): 500mA
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: TO-243AA
• Supplier Device Package: 3-PowerMiniMold

package: -

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