Transistoren - Bipolair (BJT) - RF

BFR 182W E6327

Infineon Technologies

TRANSISTOR NPN RF 12V SOT-323

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 12V
• Frequency - Transition: 8GHz
• Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
• Gain: 19dB
• Power - Max: 250mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 8V
• Current - Collector (Ic) (Max): 35mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: PG-SOT323-3

package: SC-70, SOT-323

BFP183WE6327BTSA1

Infineon Technologies

TRANSISTOR NPN RF 12V SOT-343

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 12V
• Frequency - Transition: 8GHz
• Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz
• Gain: 22dB
• Power - Max: 450mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V
• Current - Collector (Ic) (Max): 65mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-82A, SOT-343
• Supplier Device Package: PG-SOT343-4

package: SC-82A, SOT-343

2N5031

Microsemi Corporation

TRANS RF NPN 200MW 20MA TO72

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 10V
• Frequency - Transition: 400MHz
• Noise Figure (dB Typ @ f): -
• Gain: 12dB @ 400MHz
• Power - Max: 200mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1mA, 6V
• Current - Collector (Ic) (Max): 20mA
• Operating Temperature: -
• Mounting Type: Through Hole
• Package / Case: TO-206AF, TO-72-4 Metal Can
• Supplier Device Package: TO-72

package: TO-206AF, TO-72-4 Metal Can

NE85634-T1-RE-A

CEL

RF TRANSISTOR NPN SOT-89

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 12V
• Frequency - Transition: 6.5GHz
• Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
• Gain: 9dB
• Power - Max: 1.2W
• DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 20mA, 10V
• Current - Collector (Ic) (Max): 100mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-243AA
• Supplier Device Package: SOT-89

package: TO-243AA

LZ1418E100R,114

Ampleon USA Inc.

TRANSISTOR NPN POWER SOT443A

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 20V
• Frequency - Transition: 1.6GHz
• Noise Figure (dB Typ @ f): -
• Gain: -
• Power - Max: 45W
• DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 2A, 3V
• Current - Collector (Ic) (Max): 4A
• Operating Temperature: 200°C (TJ)
• Mounting Type: Flange
• Package / Case: SOT-443A
• Supplier Device Package: CDFM2

package: SOT-443A

AT-42070

Broadcom Limited

TRANS NPN BIPO 12V 80MA 70-SMD

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 12V
• Frequency - Transition: 8GHz
• Noise Figure (dB Typ @ f): 1.9dB ~ 3dB @ 2GHz ~ 4GHz
• Gain: 10.5dB ~ 14dB
• Power - Max: 600mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 35mA, 8V
• Current - Collector (Ic) (Max): 80mA
• Operating Temperature: 200°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 4-SMD (70 mil)
• Supplier Device Package: 70 mil Package

package: 4-SMD (70 mil)

NE662M04-A

CEL

RF TRANSISTOR NPN SOT-343F

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 3.3V
• Frequency - Transition: 25GHz
• Noise Figure (dB Typ @ f): 1.1dB @ 2GHz
• Gain: 18dB
• Power - Max: 115mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 2V
• Current - Collector (Ic) (Max): 35mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-343F
• Supplier Device Package: SOT-343F

package: SOT-343F

NE85639R-T1

CEL

TRANS NPN 1GHZ SOT-143R

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 12V
• Frequency - Transition: 9GHz
• Noise Figure (dB Typ @ f): 1.5dB ~ 2.1dB @ 1GHz
• Gain: 13.5dB
• Power - Max: 200mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
• Current - Collector (Ic) (Max): 100mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-143R
• Supplier Device Package: SOT-143R

package: SOT-143R

FMMT918TA

Diodes Incorporated

TRANS RF NPN 15V 100MA SOT23-3

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 15V
• Frequency - Transition: 600MHz
• Noise Figure (dB Typ @ f): 6dB @ 60MHz
• Gain: 15dB
• Power - Max: 330mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3mA, 1V
• Current - Collector (Ic) (Max): 100mA
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

package: TO-236-3, SC-59, SOT-23-3

BFS17W,115

NXP

TRANS NPN 15V 1GHZ SOT323

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 15V
• Frequency - Transition: 1.6GHz
• Noise Figure (dB Typ @ f): 4.5dB @ 500MHz
• Gain: -
• Power - Max: 300mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 2mA, 1V
• Current - Collector (Ic) (Max): 50mA
• Operating Temperature: 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: SOT-323-3

package: SC-70, SOT-323

BFP450H6433XTMA1

Infineon Technologies

TRANS RF NPN 4.5V 100MA SOT343

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 5V
• Frequency - Transition: 24GHz
• Noise Figure (dB Typ @ f): 1.25dB @ 1.8GHz
• Gain: 15.5dB
• Power - Max: 450mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 4V
• Current - Collector (Ic) (Max): 100mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-82A, SOT-343
• Supplier Device Package: PG-SOT343-4

package: SC-82A, SOT-343

0912-45

Microsemi Corporation

TRANS RF BIPO 225W 4.5A 55CT1

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 60V
• Frequency - Transition: 960MHz ~ 1.215GHz
• Noise Figure (dB Typ @ f): -
• Gain: 8dB ~ 9dB
• Power - Max: 225W
• DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 300mA, 5V
• Current - Collector (Ic) (Max): 4.5A
• Operating Temperature: 200°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: 55CT
• Supplier Device Package: 55CT

package: 55CT

JANTX2N4957

Microsemi Corporation

TRANS PNP 30V 30MA TO72

• Transistor Type: PNP
• Voltage - Collector Emitter Breakdown (Max): 30V
• Frequency - Transition: -
• Noise Figure (dB Typ @ f): 3.5dB @ 450MHz
• Gain: 25dB
• Power - Max: 200mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
• Current - Collector (Ic) (Max): 30mA
• Operating Temperature: -65°C ~ 200°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-72-3 Metal Can
• Supplier Device Package: TO-72

package: TO-72-3 Metal Can

BFG520,215

NXP

TRANS RF NPN 9GHZ 15V SOT143

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 15V
• Frequency - Transition: 9GHz
• Noise Figure (dB Typ @ f): 1.1dB ~ 2.1dB @ 900MHz
• Gain: -
• Power - Max: 300mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 6V
• Current - Collector (Ic) (Max): 70mA
• Operating Temperature: 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-253-4, TO-253AA
• Supplier Device Package: SOT-143B

package: TO-253-4, TO-253AA

BFP780H6327XTSA1

Infineon Technologies

TRANSISTOR RF NPN AMP SOT-343

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 6.1V
• Frequency - Transition: 900MHz
• Noise Figure (dB Typ @ f): 1.2dB ~ 2.4dB @ 900MHz ~ 3.5GHz
• Gain: 27dB
• Power - Max: 600mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 90mA, 5V
• Current - Collector (Ic) (Max): 120mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-82A, SOT-343
• Supplier Device Package: SOT343-4-2

package: SC-82A, SOT-343

2SC5226A-4-TL-E

ON Semiconductor

TRANS NPN BIPO VHF-UHF MCP

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 10V
• Frequency - Transition: 7GHz
• Noise Figure (dB Typ @ f): 1dB @ 1GHz
• Gain: 12dB
• Power - Max: 150mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 5V
• Current - Collector (Ic) (Max): 70mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: 3-MCP

package: SC-70, SOT-323

BLT81,115

NXP

TRANS NPN 9.5V 500MA SOT223

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 9.5V
• Frequency - Transition: 900MHz
• Noise Figure (dB Typ @ f): -
• Gain: 8dB
• Power - Max: 2W
• DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 300mA, 5V
• Current - Collector (Ic) (Max): 500mA
• Operating Temperature: 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-261-4, TO-261AA
• Supplier Device Package: SOT-223

package: TO-261-4, TO-261AA

BFU550WX

NXP

TRANS RF NPN 12V 50MA SOT-323

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 12V
• Frequency - Transition: 11GHz
• Noise Figure (dB Typ @ f): 0.6dB @ 900MHz
• Gain: 18dB
• Power - Max: 450mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 8V
• Current - Collector (Ic) (Max): 50mA
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: SOT-323-3

package: SC-70, SOT-323

BFR380TE6327

Infineon Technologies

RF BIPOLAR TRANSISTOR

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 9V
• Frequency - Transition: 14GHz
• Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
• Gain: 12.5dB
• Power - Max: 380mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 40mA, 3V
• Current - Collector (Ic) (Max): 80mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-75, SOT-416
• Supplier Device Package: PG-SC-75

package: -

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LYE16350XH

Ampleon USA Inc.

LYE16350XH - RF POWER TRANSISTOR

• Transistor Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Frequency - Transition: -
• Noise Figure (dB Typ @ f): -
• Gain: -
• Power - Max: -
• DC Current Gain (hFE) (Min) @ Ic, Vce: -
• Current - Collector (Ic) (Max): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

package: -

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RX1214B280YH

Ampleon USA Inc.

MICROWAVE POWER TRANSISTOR

• Transistor Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Frequency - Transition: -
• Noise Figure (dB Typ @ f): -
• Gain: -
• Power - Max: -
• DC Current Gain (hFE) (Min) @ Ic, Vce: -
• Current - Collector (Ic) (Max): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

package: -

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15C02SS-TL-E

onsemi

TRANSISTOR

• Transistor Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Frequency - Transition: -
• Noise Figure (dB Typ @ f): -
• Gain: -
• Power - Max: -
• DC Current Gain (hFE) (Min) @ Ic, Vce: -
• Current - Collector (Ic) (Max): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

package: -

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PH1214-110M

MACOM Technology Solutions

TRANSISTOR,110W,1.20-1.40GHZ,40V

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 70V
• Frequency - Transition: -
• Noise Figure (dB Typ @ f): -
• Gain: 7.4dB
• Power - Max: 350W
• DC Current Gain (hFE) (Min) @ Ic, Vce: -
• Current - Collector (Ic) (Max): 10.5A
• Operating Temperature: 200°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: 2L-FLG
• Supplier Device Package: 2L-FLG

package: -

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PH1214-80M

MACOM Technology Solutions

TRANSISTOR,BIPOLAR,80W,1.20-1.40

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 70V
• Frequency - Transition: 1.4GHz
• Noise Figure (dB Typ @ f): -
• Gain: 7.9dB
• Power - Max: 220W
• DC Current Gain (hFE) (Min) @ Ic, Vce: -
• Current - Collector (Ic) (Max): 6.4A
• Operating Temperature: 200°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: 2L-FLG
• Supplier Device Package: 2L-FLG

package: -

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MRF8372MR1

Microsemi Corporation

TRANS NPN 16V 200MA

• Transistor Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Frequency - Transition: -
• Noise Figure (dB Typ @ f): -
• Gain: -
• Power - Max: -
• DC Current Gain (hFE) (Min) @ Ic, Vce: -
• Current - Collector (Ic) (Max): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

package: -

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3MN03SF-TL-E

onsemi

BIP NPN 30MA 20V

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 20V
• Frequency - Transition: 320MHz
• Noise Figure (dB Typ @ f): 3dB @ 100MHz
• Gain: -
• Power - Max: 150mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 1mA, 6V
• Current - Collector (Ic) (Max): 30mA
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: 3-SMD, Flat Lead
• Supplier Device Package: 3-SSFP

package: -

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NTE161

NTE Electronics, Inc

RF TRANS NPN 45V 600MHZ TO72

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 45V
• Frequency - Transition: 600MHz
• Noise Figure (dB Typ @ f): 6dB @ 60MHz
• Gain: 15dB
• Power - Max: 200mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3mA, 1V
• Current - Collector (Ic) (Max): 50mA
• Operating Temperature: -65°C ~ 200°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-206AF, TO-72-4 Metal Can
• Supplier Device Package: TO-72

package: -

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MSC2295-BT1

onsemi

TRANS NPN RF BIPO 20V SC-59

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 20V
• Frequency - Transition: 150MHz
• Noise Figure (dB Typ @ f): -
• Gain: -
• Power - Max: 200mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 10V
• Current - Collector (Ic) (Max): 30mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SC-59

package: -

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