Pagina 10 - Transistoren - Bipolair (BJT) - RF | Discrete halfgeleiderproducten | Heisener Electronics
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Transistoren - Bipolair (BJT) - RF

Archief 1.633
Pagina  10/59
Afbeelding
Onderdeelnummer
Fabrikant
Omschrijving
package
Voorraad
Aantal
Voltage - Collector Emitter Breakdown (Max)
Frequency - Transition
Noise Figure (dB Typ @ f)
Gain
Power - Max
DC Current Gain (hFE) (Min) @ Ic, Vce
Current - Collector (Ic) (Max)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
NE85634-T1-RF-A
CEL

SAME AS 2SC3357 SAME AS 2SC3357

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 6.5GHz
  • Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
  • Gain: 9dB
  • Power - Max: 1.2W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 20mA, 10V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89
package: TO-243AA
Voorraad7.488
12V
6.5GHz
1.1dB @ 1GHz
9dB
1.2W
125 @ 20mA, 10V
100mA
150°C (TJ)
Surface Mount
TO-243AA
SOT-89
NE462M02-T1-AZ
CEL

RF TRANSISTOR NPN SOT-89

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 6GHz
  • Noise Figure (dB Typ @ f): 3.5dB @ 1GHz
  • Gain: 10dB
  • Power - Max: 1.8W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
  • Current - Collector (Ic) (Max): 150mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: -
package: TO-243AA
Voorraad2.368
12V
6GHz
3.5dB @ 1GHz
10dB
1.8W
50 @ 50mA, 5V
150mA
150°C (TJ)
Surface Mount
TO-243AA
-
NSVF2250WT1
ON Semiconductor

TRANSISTOR NPN BIPO UHF SOT-323

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SC-70-3 (SOT323)
package: SC-70, SOT-323
Voorraad2.544
15V
-
-
-
-
-
50mA
-
Surface Mount
SC-70, SOT-323
SC-70-3 (SOT323)
BLS2731-110,114
Ampleon USA Inc.

TRANSISTOR RF POWER SOT423A

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 75V
  • Frequency - Transition: 3.1GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 7dB
  • Power - Max: 500W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 3A, 5V
  • Current - Collector (Ic) (Max): 12A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-423A
  • Supplier Device Package: CDFM2
package: SOT-423A
Voorraad5.776
75V
3.1GHz
-
7dB
500W
40 @ 3A, 5V
12A
200°C (TJ)
Surface Mount
SOT-423A
CDFM2
UPA810T-A
CEL

RF DUAL TRANSISTORS NPN SOT-363

  • Transistor Type: 2 NPN (Dual)
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 4.5GHz
  • Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
  • Gain: 9dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 7mA, 3V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
package: 6-TSSOP, SC-88, SOT-363
Voorraad3.584
12V
4.5GHz
1.2dB @ 1GHz
9dB
200mW
70 @ 7mA, 3V
100mA
150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
hot SD1433
STMicroelectronics

TRANSISTOR NPN RF UHF 4LEAD

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 16V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: 7dB
  • Power - Max: 58W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
  • Current - Collector (Ic) (Max): 2.5A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: M122
  • Supplier Device Package: M122
package: M122
Voorraad4.496
16V
-
-
7dB
58W
10 @ 1A, 5V
2.5A
200°C (TJ)
Chassis, Stud Mount
M122
M122
hot SD1275-01
STMicroelectronics

TRANS NPN RF MICROWAVE VHF M113

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 16V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: 9dB
  • Power - Max: 70W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 250mA, 5V
  • Current - Collector (Ic) (Max): 8A
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: M113
  • Supplier Device Package: M113
package: M113
Voorraad6.704
16V
-
-
9dB
70W
20 @ 250mA, 5V
8A
-
Surface Mount
M113
M113
BF494_D27Z
Fairchild/ON Semiconductor

TRANSISTOR RF NPN 20V TO-92

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 350mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 67 @ 1mA, 10V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Voorraad5.792
20V
-
-
-
350mW
67 @ 1mA, 10V
30mA
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
hot AT-32032-TR1
Broadcom Limited

IC TRANS NPN BIPOLAR SOT-323

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5.5V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): 1dB ~ 1.3dB @ 900MHz
  • Gain: 13.5dB ~ 15dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 2.7V
  • Current - Collector (Ic) (Max): 40mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SC-70-3
package: SC-70, SOT-323
Voorraad806.088
5.5V
-
1dB ~ 1.3dB @ 900MHz
13.5dB ~ 15dB
200mW
70 @ 5mA, 2.7V
40mA
150°C (TJ)
Surface Mount
SC-70, SOT-323
SC-70-3
hot HFA3096B
Intersil

IC TRANS ARRAY NPN/PNP 16-SOIC

  • Transistor Type: 3 NPN + 2 PNP
  • Voltage - Collector Emitter Breakdown (Max): 12V, 15V
  • Frequency - Transition: 8GHz, 5.5GHz
  • Noise Figure (dB Typ @ f): 3.5dB @ 1GHz
  • Gain: -
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 2V / 20 @ 10mA, 2V
  • Current - Collector (Ic) (Max): 65mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 16-SOIC
package: 16-SOIC (0.154", 3.90mm Width)
Voorraad163.080
12V, 15V
8GHz, 5.5GHz
3.5dB @ 1GHz
-
150mW
40 @ 10mA, 2V / 20 @ 10mA, 2V
65mA
150°C (TJ)
Surface Mount
16-SOIC (0.154", 3.90mm Width)
16-SOIC
TCS800
Microsemi Corporation

TRANS RF BIPO 1944W 50A 55SM1

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: 1.03GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 8dB ~ 9dB
  • Power - Max: 1944W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 5V
  • Current - Collector (Ic) (Max): 50A
  • Operating Temperature: 230°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55SM
  • Supplier Device Package: 55SM
package: 55SM
Voorraad2.544
65V
1.03GHz
-
8dB ~ 9dB
1944W
20 @ 5A, 5V
50A
230°C (TJ)
Chassis Mount
55SM
55SM
UMIL80
Microsemi Corporation

TRANS RF BIPO 220W 12A 55HU-2

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 31V
  • Frequency - Transition: 200MHz ~ 500MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 9dB ~ 9.5dB
  • Power - Max: 220W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
  • Current - Collector (Ic) (Max): 12A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55HV
  • Supplier Device Package: 55HV
package: 55HV
Voorraad6.672
31V
200MHz ~ 500MHz
-
9dB ~ 9.5dB
220W
10 @ 1A, 5V
12A
200°C (TJ)
Chassis Mount
55HV
55HV
1075MP
Microsemi Corporation

TRANS RF BIPO 250W 6.5A 55FW1

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: 1.025GHz ~ 1.15GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 7.6dB ~ 8.5dB
  • Power - Max: 250W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V
  • Current - Collector (Ic) (Max): 6.5A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55FW-1
  • Supplier Device Package: 55FW-1
package: 55FW-1
Voorraad5.904
65V
1.025GHz ~ 1.15GHz
-
7.6dB ~ 8.5dB
250W
20 @ 100mA, 5V
6.5A
200°C (TJ)
Chassis Mount
55FW-1
55FW-1
hot NE68119-T1-A
CEL

RF TRANSISTOR NPN SOT-523

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 7GHz
  • Noise Figure (dB Typ @ f): 1.4dB @ 1GHz
  • Gain: 10dB
  • Power - Max: 100mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 7mA, 3V
  • Current - Collector (Ic) (Max): 65mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-523
  • Supplier Device Package: SOT-523
package: SOT-523
Voorraad756.000
10V
7GHz
1.4dB @ 1GHz
10dB
100mW
80 @ 7mA, 3V
65mA
150°C (TJ)
Surface Mount
SOT-523
SOT-523
MCH4013-TL-E
ON Semiconductor

TRANS NPN 15MA 3.5V MCPH4

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 3.5V
  • Frequency - Transition: 22.5GHz
  • Noise Figure (dB Typ @ f): 1.5dB @ 2GHz
  • Gain: 16dB
  • Power - Max: 50mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 1V
  • Current - Collector (Ic) (Max): 15mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: 4-MCPH
package: SC-82A, SOT-343
Voorraad3.936
3.5V
22.5GHz
1.5dB @ 2GHz
16dB
50mW
70 @ 5mA, 1V
15mA
150°C (TJ)
Surface Mount
SC-82A, SOT-343
4-MCPH
BFU520XVL
NXP

TRANS RF NPN 12V 30MA SOT-143B

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 10.5GHz
  • Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
  • Gain: 18dB
  • Power - Max: 450mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 8V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: SOT-143B
package: TO-253-4, TO-253AA
Voorraad3.456
12V
10.5GHz
1.1dB @ 1.8GHz
18dB
450mW
60 @ 5mA, 8V
30mA
-40°C ~ 150°C (TJ)
Surface Mount
TO-253-4, TO-253AA
SOT-143B
2SC5086-Y,LF
Toshiba Semiconductor and Storage

TRANS RF NPN 12V 1MHZ SSM

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 7GHz
  • Noise Figure (dB Typ @ f): 1dB @ 500MHz
  • Gain: -
  • Power - Max: 100mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 10V
  • Current - Collector (Ic) (Max): 80mA
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: SSM
package: SC-75, SOT-416
Voorraad5.008
12V
7GHz
1dB @ 500MHz
-
100mW
120 @ 20mA, 10V
80mA
125°C (TJ)
Surface Mount
SC-75, SOT-416
SSM
BFP540ESDH6327XTSA1
Infineon Technologies

TRANS RF NPN 4.5V 80MA SOT343

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5V
  • Frequency - Transition: 30GHz
  • Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 1.8GHz
  • Gain: 21.5dB
  • Power - Max: 250mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 3.5V
  • Current - Collector (Ic) (Max): 80mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: PG-SOT343-4
package: SC-82A, SOT-343
Voorraad90.954
5V
30GHz
0.9dB ~ 1.4dB @ 1.8GHz
21.5dB
250mW
50 @ 20mA, 3.5V
80mA
150°C (TJ)
Surface Mount
SC-82A, SOT-343
PG-SOT343-4
BFR 182 E6327
Infineon Technologies

TRANSISTOR NPN RF 12V SOT-23

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
  • Gain: 12dB ~ 18dB
  • Power - Max: 250mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 8V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23-3
package: TO-236-3, SC-59, SOT-23-3
Voorraad55.626
12V
8GHz
0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
12dB ~ 18dB
250mW
70 @ 10mA, 8V
35mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
PG-SOT23-3
BFT25A,215
NXP

TRANS NPN 5V 5GHZ SOT-23

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5V
  • Frequency - Transition: 5GHz
  • Noise Figure (dB Typ @ f): 1.8dB ~ 2dB @ 1GHz
  • Gain: -
  • Power - Max: 32mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500µA, 1V
  • Current - Collector (Ic) (Max): 6.5mA
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB (SOT23)
package: TO-236-3, SC-59, SOT-23-3
Voorraad84.888
5V
5GHz
1.8dB ~ 2dB @ 1GHz
-
32mW
50 @ 500µA, 1V
6.5mA
175°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
TO-236AB (SOT23)
2SC4260TI-03TR-E
Renesas Electronics Corporation

FREQUENCY AMPLIFIER TRANSISTOR

  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
RF3356-TP
Micro Commercial Co

Interface

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 7GHz
  • Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
  • Gain: 12.5dB
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 20mA, 10V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
package: -
Request a Quote
12V
7GHz
1.1dB @ 1GHz
12.5dB
150mW
130 @ 20mA, 10V
100mA
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
2N3866A-PBFREE
Central Semiconductor Corp

RF TRANS NPN 30V 400MHZ TO39

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Frequency - Transition: 800MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 10dB
  • Power - Max: 5W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 50mA, 5V
  • Current - Collector (Ic) (Max): 400mA
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39
package: -
Request a Quote
30V
800MHz
-
10dB
5W
25 @ 50mA, 5V
400mA
-65°C ~ 200°C (TJ)
Through Hole
TO-205AD, TO-39-3 Metal Can
TO-39
64042
Microsemi Corporation

RF POWER TRANSISTOR

  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
2SA1483-Y-TE12L-F
Toshiba Semiconductor and Storage

2SA1483-Y(TE12L,F)

  • Transistor Type: PNP
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Frequency - Transition: 200MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 1V
  • Current - Collector (Ic) (Max): 200mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: PW-MINI
package: -
Request a Quote
45V
200MHz
-
-
-
120 @ 10mA, 1V
200mA
150°C (TJ)
Surface Mount
TO-243AA
PW-MINI
MRF5812MR2
Microsemi Corporation

TRANS NPN 15V 200MA

  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
NTE160
NTE Electronics, Inc

RF TRANS PNP 20V 700MHZ TO72

  • Transistor Type: PNP
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 700MHz
  • Noise Figure (dB Typ @ f): 5dB @ 800MHz
  • Gain: 14dB
  • Power - Max: 60mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2mA, 10V
  • Current - Collector (Ic) (Max): 10mA
  • Operating Temperature: 90°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AF, TO-72-4 Metal Can
  • Supplier Device Package: TO-72
package: -
Request a Quote
20V
700MHz
5dB @ 800MHz
14dB
60mW
50 @ 2mA, 10V
10mA
90°C (TJ)
Through Hole
TO-206AF, TO-72-4 Metal Can
TO-72
NTE229
NTE Electronics, Inc

RF TRANS NPN 30V 500MHZ TO92

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Frequency - Transition: 500MHz
  • Noise Figure (dB Typ @ f): 6dB @ 45MHz
  • Gain: 28dB
  • Power - Max: 425mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92
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30V
500MHz
6dB @ 45MHz
28dB
425mW
30 @ 5mA, 10V
50mA
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92