Pagina 11 - Transistoren - Bipolair (BJT) - RF | Discrete halfgeleiderproducten | Heisener Electronics
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Transistoren - Bipolair (BJT) - RF

Archief 1.633
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Afbeelding
Onderdeelnummer
Fabrikant
Omschrijving
package
Voorraad
Aantal
Voltage - Collector Emitter Breakdown (Max)
Frequency - Transition
Noise Figure (dB Typ @ f)
Gain
Power - Max
DC Current Gain (hFE) (Min) @ Ic, Vce
Current - Collector (Ic) (Max)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
BFP 196R E6501
Infineon Technologies

TRANSISTOR RF NPN 12V SOT-143

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 7.5GHz
  • Noise Figure (dB Typ @ f): 1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz
  • Gain: 10.5dB ~ 16.5dB
  • Power - Max: 700mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 8V
  • Current - Collector (Ic) (Max): 150mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: PG-SOT143-4
package: TO-253-4, TO-253AA
Voorraad6.752
12V
7.5GHz
1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz
10.5dB ~ 16.5dB
700mW
70 @ 50mA, 8V
150mA
150°C (TJ)
Surface Mount
TO-253-4, TO-253AA
PG-SOT143-4
MRF555G
Microsemi Corporation

RF NPN TRANSISTOR

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 16V
  • Frequency - Transition: 470MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 12.5dB
  • Power - Max: 3W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 5V
  • Current - Collector (Ic) (Max): 500mA
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
Voorraad5.888
16V
470MHz
-
12.5dB
3W
50 @ 100mA, 5V
500mA
-
-
-
-
hot 2SC5551AF-TD-E
ON Semiconductor

TRANS NPN BIPO HI FREQ PCP

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Frequency - Transition: 3.5GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 1.3W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 50mA, 5V
  • Current - Collector (Ic) (Max): 300mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: PCP
package: TO-243AA
Voorraad2.000
30V
3.5GHz
-
-
1.3W
135 @ 50mA, 5V
300mA
150°C (TJ)
Surface Mount
TO-243AA
PCP
NE687M33-T3-A
CEL

TRANSISTOR NPN 2GHZ M33

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 3V
  • Frequency - Transition: 12GHz
  • Noise Figure (dB Typ @ f): 1.5dB ~ 2dB @ 2GHz
  • Gain: -
  • Power - Max: 90mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 1V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, Flat Leads
  • Supplier Device Package: 3-SuperMiniMold (M33)
package: 3-SMD, Flat Leads
Voorraad5.088
3V
12GHz
1.5dB ~ 2dB @ 2GHz
-
90mW
70 @ 10mA, 1V
30mA
150°C (TJ)
Surface Mount
3-SMD, Flat Leads
3-SuperMiniMold (M33)
NE687M03-A
CEL

TRANSISTOR NPN 2GHZ MINIMOLD

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 3V
  • Frequency - Transition: 14GHz
  • Noise Figure (dB Typ @ f): 1.3dB ~ 2dB @ 2GHz
  • Gain: -
  • Power - Max: 90mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 20mA, 2V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-623F
  • Supplier Device Package: 3-SuperMiniMold (M03)
package: SOT-623F
Voorraad6.400
3V
14GHz
1.3dB ~ 2dB @ 2GHz
-
90mW
70 @ 20mA, 2V
30mA
150°C (TJ)
Surface Mount
SOT-623F
3-SuperMiniMold (M03)
KSC1674OTA
Fairchild/ON Semiconductor

TRANSISTOR NPN 20V 20MA TO-92

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 600MHz
  • Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 100MHz
  • Gain: -
  • Power - Max: 250mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 6V
  • Current - Collector (Ic) (Max): 20mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Voorraad3.856
20V
600MHz
3dB ~ 5dB @ 100MHz
-
250mW
70 @ 1mA, 6V
20mA
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
hot BF199
Fairchild/ON Semiconductor

TRANSISTOR RF NPN 25V 50MA TO-92

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Frequency - Transition: 1.1GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 350mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 38 @ 7mA, 10V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
package: TO-226-3, TO-92-3 (TO-226AA)
Voorraad6.075.936
25V
1.1GHz
-
-
350mW
38 @ 7mA, 10V
50mA
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
BFR94A,215
NXP

TRANS NPN 5GHZ TO-236AB

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 5GHz
  • Noise Figure (dB Typ @ f): 2.1dB ~ 3dB @ 1GHz ~ 2GHz
  • Gain: -
  • Power - Max: 300mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 15mA, 10V
  • Current - Collector (Ic) (Max): 25mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB (SOT23)
package: TO-236-3, SC-59, SOT-23-3
Voorraad2.608
15V
5GHz
2.1dB ~ 3dB @ 1GHz ~ 2GHz
-
300mW
65 @ 15mA, 10V
25mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
TO-236AB (SOT23)
MS2473
Microsemi Corporation

TRANS RF BIPO 2300W 46A M112

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: 1.09GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 6dB
  • Power - Max: 2300W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 1A, 5V
  • Current - Collector (Ic) (Max): 46A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M112
  • Supplier Device Package: M112
package: M112
Voorraad6.384
65V
1.09GHz
-
6dB
2300W
5 @ 1A, 5V
46A
200°C (TJ)
Chassis Mount
M112
M112
10A060
Microsemi Corporation

TRANS RF BIPO 21W 3A 55FT-2

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 24V
  • Frequency - Transition: 1GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 8dB ~ 8.5dB
  • Power - Max: 21W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 400mA, 5V
  • Current - Collector (Ic) (Max): 3A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Stud Mount
  • Package / Case: 55FT
  • Supplier Device Package: 55FT
package: 55FT
Voorraad7.984
24V
1GHz
-
8dB ~ 8.5dB
21W
20 @ 400mA, 5V
3A
200°C (TJ)
Stud Mount
55FT
55FT
JANTX2N4957UB
Microsemi Corporation

TRANS PNP 30V 30MA

  • Transistor Type: PNP
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): 3.5dB @ 450MHz
  • Gain: 25dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: UB
package: 3-SMD, No Lead
Voorraad7.248
30V
-
3.5dB @ 450MHz
25dB
200mW
30 @ 5mA, 10V
30mA
-65°C ~ 200°C (TJ)
Surface Mount
3-SMD, No Lead
UB
hot 2SC39310CL
Panasonic Electronic Components

TRANS NPN 20VCEO 15MA S-MINI 3P

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 650MHz
  • Noise Figure (dB Typ @ f): 3.3dB @ 100MHz
  • Gain: 24dB
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 1mA, 6V
  • Current - Collector (Ic) (Max): 15mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SMini3-G1
package: SC-70, SOT-323
Voorraad23.916
20V
650MHz
3.3dB @ 100MHz
24dB
150mW
65 @ 1mA, 6V
15mA
150°C (TJ)
Surface Mount
SC-70, SOT-323
SMini3-G1
HFA3102BZ96
Intersil

IC TRANS ARRAY DUAL NPN 14-SOIC

  • Transistor Type: 6 NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 10GHz
  • Noise Figure (dB Typ @ f): 1.8dB ~ 2.1dB @ 500MHz ~ 1GHz
  • Gain: 12.4dB ~ 17.5dB
  • Power - Max: 250mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 3V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 14-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 14-SOIC
package: 14-SOIC (0.154", 3.90mm Width)
Voorraad4.320
12V
10GHz
1.8dB ~ 2.1dB @ 500MHz ~ 1GHz
12.4dB ~ 17.5dB
250mW
40 @ 10mA, 3V
30mA
150°C (TJ)
Surface Mount
14-SOIC (0.154", 3.90mm Width)
14-SOIC
CMPT918 TR
Central Semiconductor Corp

TRANS NPN 30V 50MA SOT23

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 600MHz
  • Noise Figure (dB Typ @ f): 6dB @ 60MHz
  • Gain: 11dB
  • Power - Max: 350mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3mA, 1V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
package: TO-236-3, SC-59, SOT-23-3
Voorraad3.024
15V
600MHz
6dB @ 60MHz
11dB
350mW
20 @ 3mA, 1V
50mA
-65°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
BFP740FH6327XTSA1
Infineon Technologies

TRANS RF NPN 42GHZ 4.7V SOT343

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 4.7V
  • Frequency - Transition: 42GHz
  • Noise Figure (dB Typ @ f): 0.5dB ~ 0.75dB @ 1.8GHz ~ 6GHz
  • Gain: 27.5dB
  • Power - Max: 160mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 25mA, 3V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Flat Leads
  • Supplier Device Package: 4-TSFP
package: 4-SMD, Flat Leads
Voorraad27.330
4.7V
42GHz
0.5dB ~ 0.75dB @ 1.8GHz ~ 6GHz
27.5dB
160mW
160 @ 25mA, 3V
30mA
150°C (TJ)
Surface Mount
4-SMD, Flat Leads
4-TSFP
CM5160
Central Semiconductor Corp

TRANS PNP 60V 0.4A TO39

  • Transistor Type: PNP
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Frequency - Transition: 500MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 1W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 50mA, 5V
  • Current - Collector (Ic) (Max): 400mA
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39
package: TO-205AD, TO-39-3 Metal Can
Voorraad7.552
40V
500MHz
-
-
1W
10 @ 50mA, 5V
400mA
-65°C ~ 200°C (TJ)
Through Hole
TO-205AD, TO-39-3 Metal Can
TO-39
BFP420H6327XTSA1
Infineon Technologies

TRANS RF NPN 25GHZ 4.5V SOT343

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5V
  • Frequency - Transition: 25GHz
  • Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
  • Gain: 21dB
  • Power - Max: 160mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 4V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: SOT-343
package: SC-82A, SOT-343
Voorraad43.218
5V
25GHz
1.1dB @ 1.8GHz
21dB
160mW
60 @ 20mA, 4V
35mA
150°C (TJ)
Surface Mount
SC-82A, SOT-343
SOT-343
KSP10TA
Fairchild/ON Semiconductor

TRANSISTOR RF NPN 25V TO-92

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Frequency - Transition: 650MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 350mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Voorraad19.182
25V
650MHz
-
-
350mW
60 @ 4mA, 10V
-
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
BFU520AR
NXP

TRANS RF NPN 12V 30MA SOT23-3

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 10GHz
  • Noise Figure (dB Typ @ f): 0.7dB @ 900MHz
  • Gain: 18dB
  • Power - Max: 450mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 8V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB (SOT23)
package: TO-236-3, SC-59, SOT-23-3
Voorraad22.944
12V
10GHz
0.7dB @ 900MHz
18dB
450mW
60 @ 5mA, 8V
30mA
-40°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
TO-236AB (SOT23)
BFR 92P E6327
Infineon Technologies

TRANSISTOR RF NPN 15V SOT-23

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 5GHz
  • Noise Figure (dB Typ @ f): 1.4dB ~ 2dB @ 900MHz ~ 1.8GHz
  • Gain: 10.5dB ~ 16dB
  • Power - Max: 280mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V
  • Current - Collector (Ic) (Max): 45mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23-3
package: TO-236-3, SC-59, SOT-23-3
Voorraad561.240
15V
5GHz
1.4dB ~ 2dB @ 900MHz ~ 1.8GHz
10.5dB ~ 16dB
280mW
70 @ 15mA, 8V
45mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
PG-SOT23-3
BFR360L3E6765XTMA1
Infineon Technologies

RF TRANS NPN 9V 14GHZ TSLP-3-1

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 9V
  • Frequency - Transition: 14GHz
  • Noise Figure (dB Typ @ f): 1dB ~ 1.3dB @ 1.8GHz ~ 3GHz
  • Gain: 11.5dB ~ 16dB
  • Power - Max: 210mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 15mA, 3V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-101, SOT-883
  • Supplier Device Package: PG-TSLP-3-1
package: -
Request a Quote
9V
14GHz
1dB ~ 1.3dB @ 1.8GHz ~ 3GHz
11.5dB ~ 16dB
210mW
90 @ 15mA, 3V
35mA
150°C (TJ)
Surface Mount
SC-101, SOT-883
PG-TSLP-3-1
BFW16A
Central Semiconductor Corp

RF TRANSISTOR TO-39

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Frequency - Transition: 1.2GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 1.5W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 50mA, 5V
  • Current - Collector (Ic) (Max): 150mA
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39
package: -
Request a Quote
25V
1.2GHz
-
-
1.5W
25 @ 50mA, 5V
150mA
-
Through Hole
TO-205AD, TO-39-3 Metal Can
TO-39
SD1372-06H
Microsemi Corporation

RF POWER TRANSISTOR

  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
2N5109UB-BK
Central Semiconductor Corp

RF TRANS NPN 20V 1.2GHZ TO39

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 1.2GHz
  • Noise Figure (dB Typ @ f): 3.5dB @ 200MHz
  • Gain: 11dB
  • Power - Max: 1W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 15V
  • Current - Collector (Ic) (Max): 400mA
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, No Lead
  • Supplier Device Package: UB
package: -
Request a Quote
20V
1.2GHz
3.5dB @ 200MHz
11dB
1W
40 @ 50mA, 15V
400mA
-65°C ~ 200°C (TJ)
Surface Mount
4-SMD, No Lead
UB
PH1617-2
MACOM Technology Solutions

TRANSISTOR,BIPOLAR,WLESS,2W,1.6-

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: 1.7GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 10dB
  • Power - Max: 13.5W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): 2A
  • Operating Temperature: 200°C
  • Mounting Type: Chassis Mount
  • Package / Case: 2L-FLG
  • Supplier Device Package: -
package: -
Request a Quote
65V
1.7GHz
-
10dB
13.5W
-
2A
200°C
Chassis Mount
2L-FLG
-
CP229-2N5109-CM
Central Semiconductor Corp

RF TRANSISTOR TO-39

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 1.2GHz
  • Noise Figure (dB Typ @ f): 3dB @ 200MHz
  • Gain: 11dB
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 15V
  • Current - Collector (Ic) (Max): 400mA
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
package: -
Request a Quote
20V
1.2GHz
3dB @ 200MHz
11dB
-
40 @ 50mA, 15V
400mA
-65°C ~ 200°C (TJ)
Surface Mount
Die
Die
2SC3779D
Sanyo

UHF LOW-NOISE AMPLIFIER

  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
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NSVF6001SB6T1G
onsemi

RF TRANS NPN 0.1A 12V MCPH6

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 6.7GHz
  • Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
  • Gain: 11dB
  • Power - Max: 800mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 30mA, 5V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: 6-CPH
package: -
Voorraad8.649
12V
6.7GHz
1.1dB @ 1GHz
11dB
800mW
90 @ 30mA, 5V
100mA
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
6-CPH