Transistoren - Bipolair (BJT) - RF

BFR 360F E6765

Infineon Technologies

TRANSISTOR NPN RF 6V TSFP-3

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 9V
• Frequency - Transition: 14GHz
• Noise Figure (dB Typ @ f): 1dB @ 1.8GHz
• Gain: 15.5dB
• Power - Max: 210mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 15mA, 3V
• Current - Collector (Ic) (Max): 35mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-723
• Supplier Device Package: PG-TSFP-3

package: SOT-723

PH3134-75S

M/A-Com Technology Solutions

TRANSISTOR 75W 1US 10%

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 65V
• Frequency - Transition: -
• Noise Figure (dB Typ @ f): -
• Gain: 7.5dB
• Power - Max: 75W
• DC Current Gain (hFE) (Min) @ Ic, Vce: -
• Current - Collector (Ic) (Max): 8.9A
• Operating Temperature: 200°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: -
• Supplier Device Package: -

package: -

MS2272

Microsemi Corporation

TRANS RF BIPO 940W 24A M216

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 65V
• Frequency - Transition: 960MHz ~ 1.215GHz
• Noise Figure (dB Typ @ f): -
• Gain: 7.6dB
• Power - Max: 940W
• DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V
• Current - Collector (Ic) (Max): 24A
• Operating Temperature: 200°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: M216
• Supplier Device Package: M216

package: M216

MAX2602ESA

Maxim Integrated

TRANS RF NPN 900MHZ 15V 8SOIC

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 15V
• Frequency - Transition: 1GHz
• Noise Figure (dB Typ @ f): 3.3dB @ 836MHz
• Gain: 11.6dB
• Power - Max: 6.4W
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 250mA, 3V
• Current - Collector (Ic) (Max): 1.2A
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
• Supplier Device Package: 8-SOIC-EP

package: 8-SOIC (0.154", 3.90mm Width) Exposed Pad

NE66219-T1-A

CEL

RF TRANSISTOR NPN SOT-523

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 3.3V
• Frequency - Transition: 21GHz
• Noise Figure (dB Typ @ f): 1.2dB @ 2GHz
• Gain: 14dB
• Power - Max: 115mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 2V
• Current - Collector (Ic) (Max): 35mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-523
• Supplier Device Package: SOT-523

package: SOT-523

MPSH81_D27Z

Fairchild/ON Semiconductor

TRANS RF PNP 20V 50MA TO-92

• Transistor Type: PNP
• Voltage - Collector Emitter Breakdown (Max): 20V
• Frequency - Transition: 600MHz
• Noise Figure (dB Typ @ f): -
• Gain: -
• Power - Max: 350mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
• Current - Collector (Ic) (Max): 50mA
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
• Supplier Device Package: TO-92-3

package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

UPA800T-A

CEL

RF DUAL TRANSISTORS NPN SOT-363

• Transistor Type: 2 NPN (Dual)
• Voltage - Collector Emitter Breakdown (Max): 10V
• Frequency - Transition: 8GHz
• Noise Figure (dB Typ @ f): 1.9dB @ 2GHz
• Gain: 7.5dB
• Power - Max: 200mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 3V
• Current - Collector (Ic) (Max): 35mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: SOT-363

package: 6-TSSOP, SC-88, SOT-363

HFA3127B96

Intersil

IC TRANS ARRAY NPN 16-SOIC

• Transistor Type: 5 NPN
• Voltage - Collector Emitter Breakdown (Max): 12V
• Frequency - Transition: 8GHz
• Noise Figure (dB Typ @ f): 3.5dB @ 1GHz
• Gain: -
• Power - Max: 150mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 2V
• Current - Collector (Ic) (Max): 65mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 16-SOIC

package: 16-SOIC (0.154", 3.90mm Width)

BFR92AW,135

NXP

TRANS NPN 25MA 15V 5GHZ SOT323

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 15V
• Frequency - Transition: 5GHz
• Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 1GHz ~ 2GHz
• Gain: -
• Power - Max: 300mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 15mA, 10V
• Current - Collector (Ic) (Max): 25mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: SOT-323-3

package: SC-70, SOT-323

BFQ149,115

NXP

TRANS PNP 15V 100MA SOT89

• Transistor Type: PNP
• Voltage - Collector Emitter Breakdown (Max): 15V
• Frequency - Transition: 5GHz
• Noise Figure (dB Typ @ f): 3.3dB @ 500MHz
• Gain: -
• Power - Max: 1W
• DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 70mA, 10V
• Current - Collector (Ic) (Max): 100mA
• Operating Temperature: 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-243AA
• Supplier Device Package: SOT-89-3

package: TO-243AA

BFG410W,135

NXP

TRANS RF NPN 22GHZ 4.5V SOT343

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 4.5V
• Frequency - Transition: 22GHz
• Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 2GHz
• Gain: 21dB
• Power - Max: 54mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 2V
• Current - Collector (Ic) (Max): 12mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-82A, SOT-343
• Supplier Device Package: CMPAK-4

package: SC-82A, SOT-343

MS2210

Microsemi Corporation

TRANS RF BIPO 940W 24A M216

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 65V
• Frequency - Transition: 960MHz ~ 1.215GHz
• Noise Figure (dB Typ @ f): -
• Gain: 7dB
• Power - Max: 940W
• DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V
• Current - Collector (Ic) (Max): 24A
• Operating Temperature: 200°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: M216
• Supplier Device Package: M216

package: M216

TAN150

Microsemi Corporation

TRANS RF BIPO 583W 15A 55AT1

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 55V
• Frequency - Transition: 960MHz ~ 1.215GHz
• Noise Figure (dB Typ @ f): -
• Gain: 7dB
• Power - Max: 583W
• DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
• Current - Collector (Ic) (Max): 15A
• Operating Temperature: 200°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: 55AT
• Supplier Device Package: 55AT

package: 55AT

MS1261

Microsemi Corporation

TRANS RF BIPO 34W 2.5A M122

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 18V
• Frequency - Transition: 175MHz
• Noise Figure (dB Typ @ f): -
• Gain: 12dB
• Power - Max: 34W
• DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 250mA, 5V
• Current - Collector (Ic) (Max): 2.5A
• Operating Temperature: 200°C (TJ)
• Mounting Type: Chassis, Stud Mount
• Package / Case: M122
• Supplier Device Package: M122

package: M122

SD1274

STMicroelectronics

TRANS NPN RF MICROWAVE VHF M135

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 16V
• Frequency - Transition: -
• Noise Figure (dB Typ @ f): -
• Gain: 10dB
• Power - Max: 70W
• DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 250mA, 5V
• Current - Collector (Ic) (Max): 8A
• Operating Temperature: 200°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: M135
• Supplier Device Package: M135

package: M135

2N4957UB

Microsemi Corporation

TRANS PNP 30V 30MA

• Transistor Type: PNP
• Voltage - Collector Emitter Breakdown (Max): 30V
• Frequency - Transition: -
• Noise Figure (dB Typ @ f): 3.5dB @ 450MHz
• Gain: 25dB
• Power - Max: 200mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
• Current - Collector (Ic) (Max): 30mA
• Operating Temperature: -65°C ~ 200°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 3-SMD, No Lead
• Supplier Device Package: UB

package: 3-SMD, No Lead

AT-32011-TR1G

Broadcom Limited

IC TRANS NPN BIPOLAR SOT-143

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 5.5V
• Frequency - Transition: -
• Noise Figure (dB Typ @ f): 1dB ~ 1.3dB @ 900MHz
• Gain: 12.5dB ~ 14dB
• Power - Max: 200mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 2.7V
• Current - Collector (Ic) (Max): 32mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-253-4, TO-253AA
• Supplier Device Package: SOT-143

package: TO-253-4, TO-253AA

15GN03MA-TL-E

ON Semiconductor

TRANS NPN BIPO 70MA 10V MCP

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 10V
• Frequency - Transition: 1.5GHz
• Noise Figure (dB Typ @ f): 1.6dB @ 0.4GHz
• Gain: 13dB @ 0.4GHz
• Power - Max: 400mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
• Current - Collector (Ic) (Max): 70mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: 3-MCP

package: SC-70, SOT-323

BFP840FESDH6327XTSA1

Infineon Technologies

IC TRANSISTOR RF NPN TSFP-4

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 2.6V
• Frequency - Transition: 85GHz
• Noise Figure (dB Typ @ f): 0.75dB @ 5.5GHz
• Gain: 35dB
• Power - Max: 75mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 10mA, 1.8V
• Current - Collector (Ic) (Max): 35mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-82A, SOT-343
• Supplier Device Package: 4-TSFP

package: SC-82A, SOT-343

2N5770

Central Semiconductor Corp

TRANS RF NPN 15V 50MA TO-92

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 15V
• Frequency - Transition: 900MHz
• Noise Figure (dB Typ @ f): 6dB @ 60MHz
• Gain: -
• Power - Max: 625mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 8mA, 1V
• Current - Collector (Ic) (Max): 50mA
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)
• Supplier Device Package: TO-92

package: TO-226-3, TO-92-3 (TO-226AA)

BFP640E6327BTSA1

Infineon Technologies

TRANSISTOR NPN SIGE RF SOT-343

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 4.5V
• Frequency - Transition: 40GHz
• Noise Figure (dB Typ @ f): 0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz
• Gain: 24dB
• Power - Max: 200mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 30mA, 3V
• Current - Collector (Ic) (Max): 50mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-82A, SOT-343
• Supplier Device Package: PG-SOT343-4

package: SC-82A, SOT-343

BFU668F,115

NXP

TRANSISTOR NPN SOT343F

• Transistor Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Frequency - Transition: -
• Noise Figure (dB Typ @ f): -
• Gain: -
• Power - Max: -
• DC Current Gain (hFE) (Min) @ Ic, Vce: -
• Current - Collector (Ic) (Max): -
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: SOT-343F
• Supplier Device Package: SOT-343F

package: SOT-343F

BFR193WH6327XTSA1

Infineon Technologies

TRANS RF NPN 12V 80MA SOT323

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 12V
• Frequency - Transition: 8GHz
• Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
• Gain: 10.5dB ~ 16dB
• Power - Max: 580mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
• Current - Collector (Ic) (Max): 80mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: PG-SOT323-3

package: SC-70, SOT-323

SRF4116

MACOM Technology Solutions

TRANSISTOR,1025-1150MHZ,50V,350P

• Transistor Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Frequency - Transition: -
• Noise Figure (dB Typ @ f): -
• Gain: -
• Power - Max: -
• DC Current Gain (hFE) (Min) @ Ic, Vce: -
• Current - Collector (Ic) (Max): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

package: -

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MS1001A

Microsemi Corporation

TRANS RF BIPO 270W 20A

• Transistor Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Frequency - Transition: -
• Noise Figure (dB Typ @ f): -
• Gain: -
• Power - Max: -
• DC Current Gain (hFE) (Min) @ Ic, Vce: -
• Current - Collector (Ic) (Max): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

package: -

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NTE64

NTE Electronics, Inc

RF TRANS NPN 15V 4.5GHZ 4SMD

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 15V
• Frequency - Transition: 4.5GHz
• Noise Figure (dB Typ @ f): 2dB @ 1GHz
• Gain: 12dB
• Power - Max: 375mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
• Current - Collector (Ic) (Max): 30mA
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: 4-SMD, Flat Lead
• Supplier Device Package: 4-SMD

package: -

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CP302-MPSH10-WN

Central Semiconductor Corp

RF TRANS NPNUHF/VHF

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 25V
• Frequency - Transition: 650MHz
• Noise Figure (dB Typ @ f): -
• Gain: -
• Power - Max: 350mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
• Current - Collector (Ic) (Max): -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Die

package: -

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CMPTH10-BK

Central Semiconductor Corp

RF TRANS NPNUHF/VHF SOT23

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 25V
• Frequency - Transition: 650MHz
• Noise Figure (dB Typ @ f): -
• Gain: -
• Power - Max: 350mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
• Current - Collector (Ic) (Max): -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23

package: -

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