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Toshiba Semiconductor and Storage Producten

Archief 4.549
Pagina  91/163
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Voorraad
Aantal
hot TK5A50D(STA4,Q,M)
Toshiba Semiconductor and Storage

MOSFET N-CH 500V 5A TO220SIS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 35W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack
package: TO-220-3 Full Pack
Voorraad120.000
TK11A65W,S5X
Toshiba Semiconductor and Storage

MOSFET N-CH 650V 11.1A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 450µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 890pF @ 300V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 35W (Tc)
  • Rds On (Max) @ Id, Vgs: 390 mOhm @ 5.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
package: TO-220-3 Full Pack, Isolated Tab
Voorraad6.992
TK15J60U(F)
Toshiba Semiconductor and Storage

MOSFET N-CH 600V 15A TO-3PN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 10V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 170W (Tc)
  • Rds On (Max) @ Id, Vgs: 300 mOhm @ 7.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3P(N)
  • Package / Case: TO-3P-3, SC-65-3
package: TO-3P-3, SC-65-3
Voorraad23.100
TPN2R304PL,L1Q
Toshiba Semiconductor and Storage

MOSFET N-CH 40V 80A TSON

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 0.3mA
  • Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 630mW (Ta), 104W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 40A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-TSON Advance (3.3x3.3)
  • Package / Case: 8-PowerVDFN
package: 8-PowerVDFN
Voorraad4.176
2SB1495,Q(M
Toshiba Semiconductor and Storage

TRANS PNP 3A 100V TO220-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.5mA, 1.5A
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 2A, 2V
  • Power - Max: 2W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220NIS
package: TO-220-3 Full Pack
Voorraad3.680
2SA965-O(TE6,F,M)
Toshiba Semiconductor and Storage

TRANS PNP 800MA 120V TO226-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 800mA
  • Voltage - Collector Emitter Breakdown (Max): 120V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V
  • Power - Max: 900mW
  • Frequency - Transition: 120MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: LSTM
package: TO-226-3, TO-92-3 Long Body
Voorraad5.888
RN1909FE(TE85L,F)
Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.1W ES6

  • Transistor Type: 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 47k
  • Resistor - Emitter Base (R2) (Ohms): 22k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 250MHz
  • Power - Max: 100mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6
package: SOT-563, SOT-666
Voorraad3.392
TCV7113F(TE12L,Q)
Toshiba Semiconductor and Storage

IC REG BUCK ADJ 6A SYNC 8SOP-ADV

  • Function: Step-Down
  • Output Configuration: Positive
  • Topology: Buck
  • Output Type: Adjustable
  • Number of Outputs: 1
  • Voltage - Input (Min): 2.7V
  • Voltage - Input (Max): 5.6V
  • Voltage - Output (Min/Fixed): 0.8V
  • Voltage - Output (Max): 5.6V
  • Current - Output: 6A
  • Frequency - Switching: 1MHz
  • Synchronous Rectifier: Yes
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: 8-SOP Advance (5x5)
package: 8-PowerVDFN
Voorraad5.568
TB67S215FTAG,EL
Toshiba Semiconductor and Storage

IC STEP MOTOR DRVR PWM 36WQFN

  • Motor Type - Stepper: Bipolar
  • Motor Type - AC, DC: -
  • Function: Driver - Fully Integrated, Control and Power Stage
  • Output Configuration: Half Bridge (4)
  • Interface: PWM
  • Technology: Power MOSFET
  • Step Resolution: 1, 1/2, 1/4
  • Applications: General Purpose
  • Current - Output: 2A
  • Voltage - Supply: 4.75 V ~ 5.25 V
  • Voltage - Load: 10 V ~ 35 V
  • Operating Temperature: -20°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 36-WFQFN Exposed Pad
  • Supplier Device Package: 36-WQFN (6x6)
package: 36-WFQFN Exposed Pad
Voorraad35.562
hot TC7SBL66CFU,LF
Toshiba Semiconductor and Storage

IC BUS SWITCH LOCAP USV

  • Switch Circuit: SPST - NC
  • Multiplexer/Demultiplexer Circuit: 1:1
  • Number of Circuits: 1
  • On-State Resistance (Max): 18 Ohm
  • Channel-to-Channel Matching (ΔRon): -
  • Voltage - Supply, Single (V+): 1.65 V ~ 3.6 V
  • Voltage - Supply, Dual (V±): -
  • Switch Time (Ton, Toff) (Max): 6ns, 6ns
  • -3db Bandwidth: -
  • Charge Injection: -
  • Channel Capacitance (CS(off), CD(off)): 3.5pF
  • Current - Leakage (IS(off)) (Max): 1µA
  • Crosstalk: -
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Package / Case: 5-TSSOP, SC-70-5, SOT-353
  • Supplier Device Package: USV
package: 5-TSSOP, SC-70-5, SOT-353
Voorraad816.000
TMP91FY22FG
Toshiba Semiconductor and Storage

IC MCU 16BIT 256KB FLASH 100QFP

  • Core Processor: 900/L1
  • Core Size: 16-Bit
  • Speed: 27MHz
  • Connectivity: EBI/EMI, IrDA, UART/USART
  • Peripherals: DMA
  • Number of I/O: 81
  • Program Memory Size: 256KB (256K x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 16K x 8
  • Voltage - Supply (Vcc/Vdd): -
  • Data Converters: A/D 8x10b
  • Oscillator Type: Internal
  • Operating Temperature: -20°C ~ 70°C (TA)
  • Mounting Type: -
  • Package / Case: 100-BQFP
  • Supplier Device Package: 100-QFP (14x20)
package: 100-BQFP
Voorraad2.064
hot TMP19A43FDXBG
Toshiba Semiconductor and Storage

IC MCU 32BIT 512KB FLASH 193FBGA

  • Core Processor: TX19A
  • Core Size: 32-Bit
  • Speed: 40MHz
  • Connectivity: EBI/EMI, I2C, UART/USART
  • Peripherals: DMA, WDT
  • Number of I/O: 143
  • Program Memory Size: 512KB (512K x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 24K x 8
  • Voltage - Supply (Vcc/Vdd): 1.35 V ~ 3.6 V
  • Data Converters: A/D 16x10b; D/A 2x8b
  • Oscillator Type: External
  • Operating Temperature: -20°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: 193-FBGA
  • Supplier Device Package: -
package: 193-FBGA
Voorraad19.680
TLP175A(TPL,E
Toshiba Semiconductor and Storage

PHOTO RELAY LOW TRIG CURR SO6

  • Circuit: SPST-NO (1 Form A)
  • Output Type: AC, DC
  • On-State Resistance (Max): 50 Ohm
  • Load Current: 100mA
  • Voltage - Input: 1.27VDC
  • Voltage - Load: 0 ~ 60 V
  • Mounting Type: Surface Mount
  • Termination Style: Gull Wing
  • Package / Case: 6-SMD (4 Leads), Gull Wing
  • Supplier Device Package: 6-SO, 4 Lead
  • Relay Type: Relay
package: 6-SMD (4 Leads), Gull Wing
Voorraad241.596
TLP209D(F)
Toshiba Semiconductor and Storage

PHOTORELAY MOSFET 50MA 8-SOP

  • Circuit: DPST (2 Form A)
  • Output Type: AC, DC
  • On-State Resistance (Max): 50 Ohm
  • Load Current: 50mA
  • Voltage - Input: 1.15VDC
  • Voltage - Load: 0 ~ 200 V
  • Mounting Type: Surface Mount
  • Termination Style: Gull Wing
  • Package / Case: 8-SOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-SOP
  • Relay Type: Relay
package: 8-SOP (0.173", 4.40mm Width)
Voorraad7.038
TLP3052(S,C,F)
Toshiba Semiconductor and Storage

OPTOISOLATOR 5KV TRIAC 6DIP 5L

  • Output Type: Triac
  • Zero Crossing Circuit: No
  • Number of Channels: 1
  • Voltage - Isolation: 5000Vrms
  • Voltage - Off State: 600V
  • Static dV/dt (Min): 500V/µs (Typ)
  • Current - LED Trigger (Ift) (Max): 10mA
  • Current - On State (It (RMS)) (Max): 100mA
  • Current - Hold (Ih): 1mA (Typ)
  • Turn On Time: -
  • Voltage - Forward (Vf) (Typ): 1.15V
  • Current - DC Forward (If) (Max): 50mA
  • Operating Temperature: -40°C ~ 100°C
  • Mounting Type: Through Hole
  • Package / Case: 6-DIP (0.300", 7.62mm), 5 Leads
  • Supplier Device Package: 6-DIP (Cut), 5 Lead
  • Approvals: BSI, SEMKO, UR
package: 6-DIP (0.300", 7.62mm), 5 Leads
Voorraad15.678
TLP748J(D4,F)
Toshiba Semiconductor and Storage

OPTOISOLATOR 4KV SCR 6DIP

  • Output Type: SCR
  • Zero Crossing Circuit: No
  • Number of Channels: 1
  • Voltage - Isolation: 4000Vrms
  • Voltage - Off State: 600V
  • Static dV/dt (Min): 5V/µs
  • Current - LED Trigger (Ift) (Max): 10mA
  • Current - On State (It (RMS)) (Max): 150mA
  • Current - Hold (Ih): 1mA
  • Turn On Time: 15µs
  • Voltage - Forward (Vf) (Typ): 1.15V
  • Current - DC Forward (If) (Max): 50mA
  • Operating Temperature: -40°C ~ 100°C
  • Mounting Type: Through Hole
  • Package / Case: 6-DIP (0.300", 7.62mm)
  • Supplier Device Package: 6-DIP
  • Approvals: BSI, SEMKO, UR, VDE
package: 6-DIP (0.300", 7.62mm)
Voorraad28.860
TLP293-4(V4GBTRE
Toshiba Semiconductor and Storage

OPTOISOLATOR 3.75KV TRANS SO16

  • Number of Channels: 4
  • Voltage - Isolation: 3750Vrms
  • Current Transfer Ratio (Min): 100% @ 5mA
  • Current Transfer Ratio (Max): 600% @ 5mA
  • Turn On / Turn Off Time (Typ): 3µs, 3µs
  • Rise / Fall Time (Typ): 2µs, 3µs
  • Input Type: DC
  • Output Type: Transistor
  • Voltage - Output (Max): 80V
  • Current - Output / Channel: 50mA
  • Voltage - Forward (Vf) (Typ): 1.25V
  • Current - DC Forward (If) (Max): 50mA
  • Vce Saturation (Max): 300mV
  • Operating Temperature: -55°C ~ 125°C
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.179", 4.55mm Width)
  • Supplier Device Package: 16-SO
package: 16-SOIC (0.179", 4.55mm Width)
Voorraad7.974
TLP7820(D4BLF4,E
Toshiba Semiconductor and Storage

ISO AMP ANALOG OUTPUT GAIN SAFE

  • Amplifier Type: Isolation
  • Number of Circuits: 1
  • Output Type: Differential
  • Slew Rate: -
  • Gain Bandwidth Product: -
  • -3db Bandwidth: 230kHz
  • Current - Input Bias: 5.5nA
  • Voltage - Input Offset: 900µV
  • Current - Supply: 12mA
  • Current - Output / Channel: -
  • Voltage - Supply, Single/Dual (±): 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 105°C
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 8-SO
package: 8-SOIC (0.295", 7.50mm Width)
Voorraad6.992
RN2908-LXHF-CT
Toshiba Semiconductor and Storage

AUTO AEC-Q TR PNPX2 BRT, Q1BSR=2

  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 22kOhms
  • Resistor - Emitter Base (R2) (Ohms): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 200MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
package: -
Voorraad17.988
7UL1T86FS-LF-B
Toshiba Semiconductor and Storage

L-MOS LVP IC VCC: 2.3V-3.6V, SOT

  • Logic Type: XOR (Exclusive OR)
  • Number of Circuits: 1
  • Number of Inputs: 2
  • Features: -
  • Voltage - Supply: 2.3V ~ 3.6V
  • Current - Quiescent (Max): 1 µA
  • Current - Output High, Low: 8mA, 8mA
  • Logic Level - Low: 0.35V ~ 0.5V
  • Logic Level - High: 1.1V ~ 1.2V
  • Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 15pF
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: fSV
  • Package / Case: SOT-953
package: -
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TC62D748CFG-O-EL
Toshiba Semiconductor and Storage

IC LED DRIVER LINEAR

  • Type: Linear
  • Topology: Shift Register
  • Internal Switch(s): No
  • Number of Outputs: 16
  • Voltage - Supply (Min): 3V
  • Voltage - Supply (Max): 5.5V
  • Voltage - Output: 17V
  • Current - Output / Channel: 90mA
  • Frequency: -
  • Dimming: No
  • Applications: General Purpose
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-SOP (0.236", 6.00mm Width)
  • Supplier Device Package: 24-SSOP
package: -
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RN2418-LF
Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A SMINI

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Resistor - Base (R1) (Ohms): 47 kOhms
  • Resistor - Emitter Base (R2) (Ohms): 10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 200 MHz
  • Power - Max: 200 mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: S-Mini
package: -
Voorraad9.000
RN4904FE-LF-CT
Toshiba Semiconductor and Storage

TRANS NPN/PNP PREBIAS 0.1W ES6

  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 47kOhms
  • Resistor - Emitter Base (R2) (Ohms): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250MHz, 200MHz
  • Power - Max: 100mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6
package: -
Voorraad12.000
2SA2097-TE16L1-NQ
Toshiba Semiconductor and Storage

TRANS PNP 50V 5A PW-MOLD

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 5 A
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Vce Saturation (Max) @ Ib, Ic: 270mV @ 53mA, 1.6A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
  • Power - Max: 1 W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: PW-MOLD
package: -
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TK28E65W-S1X
Toshiba Semiconductor and Storage

PB-F POWER MOSFET TRANSISTOR TO-

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 27.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 1.6mA
  • Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 230W (Tc)
  • Rds On (Max) @ Id, Vgs: 110mOhm @ 13.8A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
package: -
Voorraad150
TC74LCX541FT
Toshiba Semiconductor and Storage

IC BUF NON-INVERT 3.6V 20TSSOP

  • Logic Type: Buffer, Non-Inverting
  • Number of Elements: 1
  • Number of Bits per Element: 8
  • Input Type: -
  • Output Type: 3-State
  • Current - Output High, Low: 24mA, 24mA
  • Voltage - Supply: 1.65V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 20-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 20-TSSOP
package: -
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CMS02-TE12L
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 3A MFLAT

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 400 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500 µA @ 30 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-128
  • Supplier Device Package: M-FLAT (2.4x3.8)
  • Operating Temperature - Junction: -40°C ~ 125°C
package: -
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7UL2T86FK-LF-B
Toshiba Semiconductor and Storage

L-MOS LVP IC SOT-765(US8) VCC:2.

  • Logic Type: XOR (Exclusive OR)
  • Number of Circuits: 2
  • Number of Inputs: 2
  • Features: -
  • Voltage - Supply: 2.3V ~ 3.6V
  • Current - Quiescent (Max): 1 µA
  • Current - Output High, Low: 8mA, 8mA
  • Logic Level - Low: 0.35V ~ 0.5V
  • Logic Level - High: 1.1V ~ 1.2V
  • Max Propagation Delay @ V, Max CL: 5.2ns @ 3.3V, 15pF
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: US8
  • Package / Case: 8-VFSOP (0.091", 2.30mm Width)
package: -
Voorraad18.000