Toshiba Semiconductor and Storage Producten

2SK2962(T6CANO,F,M

Toshiba Semiconductor and Storage

MOSFET N-CH

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: Through Hole
• Supplier Device Package: TO-92MOD
• Package / Case: TO-226-3, TO-92-3 Long Body

package: TO-226-3, TO-92-3 Long Body

TK90S06N1L,LQ

Toshiba Semiconductor and Storage

MOSFET N-CH 60V 90A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 500µA
• Gate Charge (Qg) (Max) @ Vgs: 81nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 5400pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 157W (Tc)
• Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 45A, 10V
• Operating Temperature: 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-252-3
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

package: TO-252-3, DPak (2 Leads + Tab), SC-63

TPH7R506NH,L1Q

Toshiba Semiconductor and Storage

MOSFET N CH 60V 22A 8-SOP ADV

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 300µA
• Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2320pF @ 30V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
• Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 11A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SOP Advance (5x5)
• Package / Case: 8-PowerVDFN

package: 8-PowerVDFN

SSM6L35FU(TE85L,F)

Toshiba Semiconductor and Storage

MOSFET N/P-CH 20V 0.18A/0.1A US6

• FET Type: N and P-Channel
• FET Feature: Logic Level Gate, 1.2V Drive
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 180mA, 100mA
• Rds On (Max) @ Id, Vgs: 3 Ohm @ 50mA, 4V
• Vgs(th) (Max) @ Id: 1V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 3V
• Power - Max: 200mW
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: US6

package: 6-TSSOP, SC-88, SOT-363

2SC5930(T2MITUM,FM

Toshiba Semiconductor and Storage

TRANS NPN 1A 600V SC71

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 1A
• Voltage - Collector Emitter Breakdown (Max): 600V
• Vce Saturation (Max) @ Ib, Ic: 1V @ 75mA, 600mA
• Current - Collector Cutoff (Max): 100µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 5V
• Power - Max: 1W
• Frequency - Transition: -
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: SC-71
• Supplier Device Package: MSTM

package: SC-71

2SC5439(F)

Toshiba Semiconductor and Storage

TRANS NPN 450V 8A TO220NIS

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 8A
• Voltage - Collector Emitter Breakdown (Max): 450V
• Vce Saturation (Max) @ Ib, Ic: 1V @ 640mA, 3.2A
• Current - Collector Cutoff (Max): 100µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 1A, 5V
• Power - Max: 2W
• Frequency - Transition: -
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack
• Supplier Device Package: TO-220NIS

package: TO-220-3 Full Pack

RN2506(TE85L,F)

Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.3W SMV

• Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 4.7k
• Resistor - Emitter Base (R2) (Ohms): 47k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 200MHz
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Package / Case: SC-74A, SOT-753
• Supplier Device Package: SMV

package: SC-74A, SOT-753

TA58M06S,MTDQ(J

Toshiba Semiconductor and Storage

IC REG LINEAR 500MA LSTM

• Output Configuration: -
• Output Type: -
• Number of Regulators: 1
• Voltage - Input (Max): -
• Voltage - Output (Min/Fixed): -
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 500mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: -
• Control Features: -
• Protection Features: -
• Operating Temperature: -40°C ~ 105°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack
• Supplier Device Package: LSTM

package: TO-220-3 Full Pack

TA48L018F(TE12L,F)

Toshiba Semiconductor and Storage

IC REG LINEAR 1.8V 150MA PWMINI

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 16V
• Voltage - Output (Min/Fixed): 1.8V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.5V @ 100mA
• Current - Output: 150mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 800µA ~ 5mA
• PSRR: 72dB (120Hz)
• Control Features: -
• Protection Features: Over Current, Over Temperature
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: TO-243AA
• Supplier Device Package: PW-MINI (SOT-89)

package: TO-243AA

TB67S269FTG

Toshiba Semiconductor and Storage

IC MOTOR DVR BIPO STEP 48WQFN

• Motor Type - Stepper: Bipolar
• Motor Type - AC, DC: -
• Function: Driver - Fully Integrated, Control and Power Stage
• Output Configuration: Half Bridge (4)
• Interface: Parallel
• Technology: Power MOSFET
• Step Resolution: 1 ~ 1/32
• Applications: General Purpose
• Current - Output: 2A
• Voltage - Supply: 4.75 V ~ 5.25 V
• Voltage - Load: 10 V ~ 47 V
• Operating Temperature: -20°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 48-WFQFN Exposed Pad
• Supplier Device Package: 48-WQFN (7x7)

package: 48-WFQFN Exposed Pad

TB6593FNG(O,EL)

Toshiba Semiconductor and Storage

IC MOTOR DRIVER PAR 20SSOP

• Motor Type - Stepper: -
• Motor Type - AC, DC: Brushed DC
• Function: Driver - Fully Integrated, Control and Power Stage
• Output Configuration: Half Bridge (2)
• Interface: PWM
• Technology: Power MOSFET
• Step Resolution: -
• Applications: General Purpose
• Current - Output: 1A
• Voltage - Supply: 2.7 V ~ 5.5 V
• Voltage - Load: 2.5 V ~ 13.5 V
• Operating Temperature: -20°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 20-LSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 20-SSOP

package: 20-LSSOP (0.173", 4.40mm Width)

TC58BVG0S3HTA00

Toshiba Semiconductor and Storage

IC EEPROM 1GBIT 25NS 48TSOP

• Memory Type: Non-Volatile
• Memory Format: EEPROM
• Technology: EEPROM - NAND
• Memory Size: 1Gb (128M x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 25ns
• Access Time: 25ns
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 48-TFSOP (0.724", 18.40mm Width)
• Supplier Device Package: 48-TSOP I

package: 48-TFSOP (0.724", 18.40mm Width)

TC74AC373P(F)

Toshiba Semiconductor and Storage

IC LATCH OCT D-TYPE 3-ST 20-DIP

• Logic Type: D-Type Transparent Latch
• Circuit: 8:8
• Output Type: Tri-State
• Voltage - Supply: 2 V ~ 5.5 V
• Independent Circuits: 1
• Delay Time - Propagation: 5.8ns
• Current - Output High, Low: 75mA, 75mA
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Through Hole
• Package / Case: 20-DIP (0.300", 7.62mm)
• Supplier Device Package: 20-DIP

package: 20-DIP (0.300", 7.62mm)

TC7SH14FSTPL3

Toshiba Semiconductor and Storage

IC GATE FSV

• Logic Type: Inverter
• Number of Circuits: 1
• Number of Inputs: 1
• Features: Schmitt Trigger
• Voltage - Supply: 2 V ~ 5.5 V
• Current - Quiescent (Max): 2µA
• Current - Output High, Low: 8mA, 8mA
• Logic Level - Low: 0.9 V ~ 1.65 V
• Logic Level - High: 2.2 V ~ 3.85 V
• Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Supplier Device Package: fSV
• Package / Case: SOT-953

package: SOT-953

TC75S57F,LF

Toshiba Semiconductor and Storage

IC C0MP GP CMOS PUSH-PULL SMV

• Type: General Purpose
• Number of Elements: 1
• Output Type: Push-Pull
• Voltage - Supply, Single/Dual (±): 1.8 V ~ 7 V, ±0.9 V ~ 3.5 V
• Voltage - Input Offset (Max): 7mV @ 5V
• Current - Input Bias (Max): 1pA
• Current - Output (Typ): 25mA
• Current - Quiescent (Max): 220µA
• CMRR, PSRR (Typ): -
• Propagation Delay (Max): 140ns
• Hysteresis: -
• Operating Temperature: -40°C ~ 85°C
• Package / Case: SC-74A, SOT-753
• Mounting Type: Surface Mount
• Supplier Device Package: SMV

package: SC-74A, SOT-753

TC75S101FE,LM(T

Toshiba Semiconductor and Storage

IC OP AMP GP CMOS ESV

• Amplifier Type: General Purpose
• Number of Circuits: 1
• Output Type: -
• Slew Rate: 0.15 V/µs
• Gain Bandwidth Product: -
• -3db Bandwidth: -
• Current - Input Bias: 0.1pA
• Voltage - Input Offset: 1.2mV
• Current - Supply: 63µA
• Current - Output / Channel: 1.5mA
• Voltage - Supply, Single/Dual (±): 1.5 V ~ 5.5 V, ±0.75 V ~ 2.75 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: SOT-553
• Supplier Device Package: ESV

package: SOT-553

DF2B6.8AFS,L3M

Toshiba Semiconductor and Storage

TVS DIODE 5VWM 7VC FSC

• Type: Steering (Rail to Rail)
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 5V (Max)
• Voltage - Breakdown (Min): 5.8V
• Voltage - Clamping (Max) @ Ipp: 7V (Typ)
• Current - Peak Pulse (10/1000µs): 1A (8/20µs)
• Power - Peak Pulse: -
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: 9pF @ 1MHz
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: SOD-923
• Supplier Device Package: fSC (SOD-923)

package: SOD-923

TLP197G(F)

Toshiba Semiconductor and Storage

PHOTORELAY MOSFET 350V 6SOP

• Circuit: SPST-NO (1 Form A)
• Output Type: AC, DC
• On-State Resistance (Max): 35 Ohm
• Load Current: 120mA
• Voltage - Input: 1.15VDC
• Voltage - Load: 0 ~ 350 V
• Mounting Type: Surface Mount
• Termination Style: Gull Wing
• Package / Case: 6-SOP (0.173", 4.40mm)
• Supplier Device Package: 6-SOP (2.54mm)
• Relay Type: Relay

package: 6-SOP (0.173", 4.40mm)

74LCX374FT(AE)

Toshiba Semiconductor and Storage

IC FF D-TYPE SNGL 8BIT 20TSSOPB

• Function: Standard
• Type: D-Type
• Output Type: Tri-State, Non-Inverted
• Number of Elements: 1
• Number of Bits per Element: 8
• Clock Frequency: 150MHz
• Max Propagation Delay @ V, Max CL: 8.5ns @ 3.3V, 50pF
• Trigger Type: Positive Edge
• Current - Output High, Low: 24mA, 24mA
• Voltage - Supply: 2 V ~ 3.6 V
• Current - Quiescent (Iq): 10µA
• Input Capacitance: 7pF
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 20-TSSOP (0.173", 4.40mm Width)

package: 20-TSSOP (0.173", 4.40mm Width)

TCR4DG30,LF

Toshiba Semiconductor and Storage

X34 LDO REGULATORS VOUT: 3.0V IO

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 3V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.291V @ 420mA
• Current - Output: 420mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: 70dB (1kHz)
• Control Features: Enable
• Protection Features: Over Current, Over Temperature, Short Circuit
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 4-XFBGA, CSPBGA
• Supplier Device Package: 4-WCSPE (0.65x0.65)

package: 4-XFBGA, CSPBGA

RN2108-LF-CT

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A SSM

• Transistor Type: PNP - Pre-Biased
• Current - Collector (Ic) (Max): 100 mA
• Voltage - Collector Emitter Breakdown (Max): 50 V
• Resistor - Base (R1) (Ohms): 22 kOhms
• Resistor - Emitter Base (R2) (Ohms): 47 kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 200 MHz
• Power - Max: 100 mW
• Mounting Type: Surface Mount
• Package / Case: SC-75, SOT-416
• Supplier Device Package: SSM

package: -

RN2410-LF

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V SMINI

• Transistor Type: PNP - Pre-Biased
• Current - Collector (Ic) (Max): 100 mA
• Voltage - Collector Emitter Breakdown (Max): 50 V
• Resistor - Base (R1) (Ohms): 4.7 kOhms
• Resistor - Emitter Base (R2) (Ohms): -
• DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 200 MHz
• Power - Max: 200 mW
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: S-Mini

package: -

TPN2R903PL-L1Q

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 70A 8TSON

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.1V @ 200µA
• Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 630mW (Ta), 75W (Tc)
• Rds On (Max) @ Id, Vgs: 2.9mOhm @ 35A, 10V
• Operating Temperature: 175°C
• Mounting Type: Surface Mount
• Supplier Device Package: 8-TSON Advance (3.1x3.1)
• Package / Case: 8-PowerVDFN

package: -

RN2903FE-LXHF-CT

Toshiba Semiconductor and Storage

AUTO AEC-Q 2-IN-1 (POINT-SYMMETR

• Transistor Type: 2 PNP - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 22kOhms
• Resistor - Emitter Base (R2) (Ohms): 22kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 200MHz
• Power - Max: 100mW
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-666
• Supplier Device Package: ES6

package: -

RN4990-TE85L-F

Toshiba Semiconductor and Storage

NPN + PNP BRT Q1BSR=4.7KOHM Q1BE

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 4.7kOhms
• Resistor - Emitter Base (R2) (Ohms): -
• DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 250MHz, 200MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: US6

package: -

2SA1162-O-LXHF

Toshiba Semiconductor and Storage

TRANS PNP 50V 0.15A SMINI

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 150 mA
• Voltage - Collector Emitter Breakdown (Max): 50 V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
• Power - Max: 200 mW
• Frequency - Transition: 80MHz
• Operating Temperature: 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: S-Mini

package: -

TCR3UM08A-LF-SE

Toshiba Semiconductor and Storage

LDO REG IOUT: 300MA VIN: 6V VOUT

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 0.8V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 1.257V @ 300mA
• Current - Output: 300mA
• Current - Quiescent (Iq): 580 nA
• Current - Supply (Max): -
• PSRR: 70dB (1kHz)
• Control Features: Current Limit, Enable
• Protection Features: Over Current, Over Temperature
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 4-UDFN Exposed Pad
• Supplier Device Package: 4-DFN (1x1)

package: -

TMPM4GNF10FG

Toshiba Semiconductor and Storage

IC MCU 32BIT 1MB FLASH 100LQFP

• Core Processor: ARM® Cortex®-M4F
• Core Size: 32-Bit
• Speed: 200MHz
• Connectivity: EBI/EMI, FIFO, I2C, IrDA, SIO, SPI, UART/USART
• Peripherals: DMA, I2S, LVD, POR, PWM, WDT
• Number of I/O: 91
• Program Memory Size: 1MB (1M x 8)
• Program Memory Type: FLASH
• EEPROM Size: 32K x 8
• RAM Size: 256K x 8
• Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V
• Data Converters: A/D 24x12b SAR; D/A 2x8b
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 100-LQFP
• Supplier Device Package: 100-LQFP (14x14)

package: -

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