Toshiba Semiconductor and Storage Producten

TK5P50D(T6RSS-Q)

Toshiba Semiconductor and Storage

MOSFET N-CH 500V 5A DPAK-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 80W (Tc)
• Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2.5A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D-Pak
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

package: TO-252-3, DPak (2 Leads + Tab), SC-63

TPC8211(TE12L,Q,M)

Toshiba Semiconductor and Storage

MOSFET 2N-CH 30V 5.5A SOP8

• FET Type: 2 N-Channel (Dual)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 5.5A
• Rds On (Max) @ Id, Vgs: 36 mOhm @ 3A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 10V
• Power - Max: 450mW
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.173", 4.40mm Width)
• Supplier Device Package: 8-SOP (5.5x6.0)

package: 8-SOIC (0.173", 4.40mm Width)

2SC5201,T6F(J

Toshiba Semiconductor and Storage

TRANS NPN 50MA 600V TO226-3

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 50mA
• Voltage - Collector Emitter Breakdown (Max): 600V
• Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 20mA
• Current - Collector Cutoff (Max): 1µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 20mA, 5V
• Power - Max: 900mW
• Frequency - Transition: -
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 Long Body
• Supplier Device Package: TO-92MOD

package: TO-226-3, TO-92-3 Long Body

RN2310,LF

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 0.1W USM

• Transistor Type: PNP - Pre-Biased
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 4.7k
• Resistor - Emitter Base (R2) (Ohms): -
• DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 200MHz
• Power - Max: 100mW
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: USM

package: SC-70, SOT-323

RN2901(T5L,F,T)

Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.2W US6

• Transistor Type: 2 PNP - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 4.7k
• Resistor - Emitter Base (R2) (Ohms): 4.7k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 200MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: US6

package: 6-TSSOP, SC-88, SOT-363

CLH05,LMBJQ(O

Toshiba Semiconductor and Storage

DIODE GEN PURP 200V 5A L-FLAT

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 5A (DC)
• Voltage - Forward (Vf) (Max) @ If: 0.98V @ 5A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35ns
• Current - Reverse Leakage @ Vr: 10µA @ 200V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: L-FLAT?
• Supplier Device Package: L-FLAT? (4x5.5)
• Operating Temperature - Junction: -40°C ~ 150°C

package: L-FLAT?

TA58L05F(TE16L1,NQ

Toshiba Semiconductor and Storage

IC REG LINEAR 5V 250MA PW-MOLD

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 29V
• Voltage - Output (Min/Fixed): 5V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.4V @ 200mA
• Current - Output: 250mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 1mA ~ 50mA
• PSRR: -
• Control Features: Enable
• Protection Features: Over Current, Over Temperature
• Operating Temperature: -40°C ~ 105°C
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: PW-MOLD

package: TO-252-3, DPak (2 Leads + Tab), SC-63

TCR2LF36,LM(CT

Toshiba Semiconductor and Storage

IC REG LINEAR 3.6V 200MA SMV

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 3.6V
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 200mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 2µA
• PSRR: -
• Control Features: Enable
• Protection Features: Over Current
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: SC-74A, SOT-753
• Supplier Device Package: SMV

package: SC-74A, SOT-753

TB67H400AHG

Toshiba Semiconductor and Storage

IC MOTOR DRIVER PAR 25HZIP

• Motor Type - Stepper: -
• Motor Type - AC, DC: Brushed DC
• Function: Driver - Fully Integrated, Control and Power Stage
• Output Configuration: Half Bridge (4)
• Interface: Parallel, PWM
• Technology: Power MOSFET
• Step Resolution: -
• Applications: General Purpose
• Current - Output: 6A
• Voltage - Supply: 4.75 V ~ 5.25 V
• Voltage - Load: 10 V ~ 47 V
• Operating Temperature: -20°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 25-SIP, Formed Leads
• Supplier Device Package: 25-HZIP

package: 25-SIP, Formed Leads

TC74VCX257FTEL

Toshiba Semiconductor and Storage

IC MULTIPLEXER 1 X 2:4 16TSSOP

• Type: Multiplexer
• Circuit: 1 x 2:4
• Independent Circuits: 4
• Current - Output High, Low: 24mA, 24mA
• Voltage Supply Source: Single Supply
• Voltage - Supply: 1.2 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 16-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 16-TSSOP

package: 16-TSSOP (0.173", 4.40mm Width)

TC74LVX374FTEL

Toshiba Semiconductor and Storage

IC D-TYPE POS TRG SNGL 20TSSOP

• Function: Standard
• Type: D-Type
• Output Type: Tri-State, Non-Inverted
• Number of Elements: 1
• Number of Bits per Element: 8
• Clock Frequency: 95MHz
• Max Propagation Delay @ V, Max CL: 14.1ns @ 3.3V, 50pF
• Trigger Type: Positive Edge
• Current - Output High, Low: 4mA, 4mA
• Voltage - Supply: 2 V ~ 3.6 V
• Current - Quiescent (Iq): 4µA
• Input Capacitance: 4pF
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 20-TSSOP (0.173", 4.40mm Width)

package: 20-TSSOP (0.173", 4.40mm Width)

TC7SH125FSTPL3

Toshiba Semiconductor and Storage

IC BUS BUFF DVR TRI-ST FSV

• Logic Type: Buffer, Non-Inverting
• Number of Elements: 1
• Number of Bits per Element: 1
• Input Type: -
• Output Type: Push-Pull
• Current - Output High, Low: 8mA, 8mA
• Voltage - Supply: 2 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: SOT-953
• Supplier Device Package: fSV

package: SOT-953

TC74ACT244PF

Toshiba Semiconductor and Storage

IC BUFF/DVR TRI-ST DUAL 20DIP

• Logic Type: Buffer, Non-Inverting
• Number of Elements: 2
• Number of Bits per Element: 4
• Input Type: -
• Output Type: Push-Pull
• Current - Output High, Low: 24mA, 24mA
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Through Hole
• Package / Case: 20-DIP (0.300", 7.62mm)
• Supplier Device Package: 20-DIP

package: 20-DIP (0.300", 7.62mm)

DF2S5.1SC(TPL3)

Toshiba Semiconductor and Storage

TVS DIODE SC2

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 1.5V
• Voltage - Breakdown (Min): 4.85V
• Voltage - Clamping (Max) @ Ipp: -
• Current - Peak Pulse (10/1000µs): -
• Power - Peak Pulse: -
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: 25pF @ 1MHz
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: 2-SMD, Flat Lead
• Supplier Device Package: SC2

package: 2-SMD, Flat Lead

TLP512(F)

Toshiba Semiconductor and Storage

OPTOISOLATOR 2.5KV TRANS 6-DIP

• Number of Channels: 1
• Voltage - Isolation: 2500Vrms
• Current Transfer Ratio (Min): 15% @ 16mA
• Current Transfer Ratio (Max): -
• Turn On / Turn Off Time (Typ): 800ns, 800ns (Max)
• Rise / Fall Time (Typ): -
• Input Type: DC
• Output Type: Transistor
• Voltage - Output (Max): 15V
• Current - Output / Channel: 8mA
• Voltage - Forward (Vf) (Typ): 1.65V
• Current - DC Forward (If) (Max): 25mA
• Vce Saturation (Max): -
• Operating Temperature: -55°C ~ 100°C
• Mounting Type: Through Hole
• Package / Case: 6-DIP (0.300", 7.62mm)
• Supplier Device Package: 6-DIP

package: 6-DIP (0.300", 7.62mm)

TLP3924(TP15,F)

Toshiba Semiconductor and Storage

OPTOISO 1.5KV PHOTOVOLTAIC 4SSOP

• Number of Channels: 1
• Voltage - Isolation: 1500Vrms
• Current Transfer Ratio (Min): -
• Current Transfer Ratio (Max): -
• Turn On / Turn Off Time (Typ): -
• Rise / Fall Time (Typ): -
• Input Type: DC
• Output Type: Photovoltaic
• Voltage - Output (Max): 30V
• Current - Output / Channel: 4µA
• Voltage - Forward (Vf) (Typ): 1.3V
• Current - DC Forward (If) (Max): 30mA
• Vce Saturation (Max): -
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 4-SMD, Flat Leads
• Supplier Device Package: 4-SSOP

package: 4-SMD, Flat Leads

TLP291(GR,E)

Toshiba Semiconductor and Storage

OPTOISOLATOR 3.75KV TRANS 4-SO

• Number of Channels: 1
• Voltage - Isolation: 3750Vrms
• Current Transfer Ratio (Min): 100% @ 5mA
• Current Transfer Ratio (Max): 300% @ 5mA
• Turn On / Turn Off Time (Typ): 7µs, 7µs
• Rise / Fall Time (Typ): 4µs, 7µs
• Input Type: DC
• Output Type: Transistor
• Voltage - Output (Max): 80V
• Current - Output / Channel: 50mA
• Voltage - Forward (Vf) (Typ): 1.25V
• Current - DC Forward (If) (Max): 50mA
• Vce Saturation (Max): 300mV
• Operating Temperature: -55°C ~ 110°C
• Mounting Type: Surface Mount
• Package / Case: 4-SOIC (0.179", 4.55mm)
• Supplier Device Package: 4-SO

package: 4-SOIC (0.179", 4.55mm)

74VHCT04AFT

Toshiba Semiconductor and Storage

IC INVERTER 6CH 6-INP 14TSSOPB

• Logic Type: Inverter
• Number of Circuits: 6
• Number of Inputs: 6
• Features: -
• Voltage - Supply: 4.5 V ~ 5.5 V
• Current - Quiescent (Max): 2µA
• Current - Output High, Low: 8mA, 8mA
• Logic Level - Low: 0.8V
• Logic Level - High: 2V
• Max Propagation Delay @ V, Max CL: 7.7ns @ 5V, 50pF
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Supplier Device Package: 14-TSSOPB
• Package / Case: 14-TSSOP (0.173", 4.40mm Width)

package: 14-TSSOP (0.173", 4.40mm Width)

TCR15AG30,LF

Toshiba Semiconductor and Storage

IC REG LINEAR 3V 1.5A 6WCSP

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 6V
• Voltage - Output (Min/Fixed): 3V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.648V @ 1.5A
• Current - Output: 1.5A
• Current - Quiescent (Iq): 40µA
• Current - Supply (Max): -
• PSRR: 95dB ~ 60dB (1kHz)
• Control Features: Enable
• Protection Features: Current Limit, Thermal Shutdown, UVLO
• Operating Temperature: -40°C ~ 85°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-XFBGA, WLCSP
• Supplier Device Package: 6-WCSP (1.2x0.80)

package: 6-XFBGA, WLCSP

GT20N135SRA-S1E

Toshiba Semiconductor and Storage

IGBT 1350V 40A TO247

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 1350 V
• Current - Collector (Ic) (Max): 40 A
• Current - Collector Pulsed (Icm): 80 A
• Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
• Power - Max: 312 W
• Switching Energy: -, 700µJ (off)
• Input Type: Standard
• Gate Charge: 185 nC
• Td (on/off) @ 25°C: -
• Test Condition: 300V, 40A, 39Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247

package: -

RN1107-LXHF-CT

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A SSM

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 100 mA
• Voltage - Collector Emitter Breakdown (Max): 50 V
• Resistor - Base (R1) (Ohms): 10 kOhms
• Resistor - Emitter Base (R2) (Ohms): 47 kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 250 MHz
• Power - Max: 100 mW
• Mounting Type: Surface Mount
• Package / Case: SC-75, SOT-416
• Supplier Device Package: SSM

package: -

TCR3DM10-LF-SE

Toshiba Semiconductor and Storage

LDO REG IOUT: 300MA VIN: 6V VOUT

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 1V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.75V @ 300mA
• Current - Output: 300mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: -
• Control Features: Enable
• Protection Features: Over Current, Over Temperature
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 4-UDFN Exposed Pad
• Supplier Device Package: 4-DFN (1x1)

package: -

SSM6N39TU-LF

Toshiba Semiconductor and Storage

MOSFET 2N-CH 20V 1.6A UF6

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
• Rds On (Max) @ Id, Vgs: 119mOhm @ 1A, 4V
• Vgs(th) (Max) @ Id: 1V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4V
• Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 10V
• Power - Max: 500mW
• Operating Temperature: 150°C
• Mounting Type: Surface Mount
• Package / Case: 6-SMD, Flat Leads
• Supplier Device Package: UF6

package: -

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SSM10N961L-ELF

Toshiba Semiconductor and Storage

30V N-CH COMMON DRAIN FET RSS:9.

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
• Rds On (Max) @ Id, Vgs: -
• Vgs(th) (Max) @ Id: 2.3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Power - Max: 880mW (Ta)
• Operating Temperature: 150°C
• Mounting Type: Surface Mount
• Package / Case: 10-XFLGA, CSP
• Supplier Device Package: TCSPAG-341501

package: -

RN2109MFV-L3F

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A VESM

• Transistor Type: PNP - Pre-Biased
• Current - Collector (Ic) (Max): 100 mA
• Voltage - Collector Emitter Breakdown (Max): 50 V
• Resistor - Base (R1) (Ohms): 47 kOhms
• Resistor - Emitter Base (R2) (Ohms): 22 kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: -
• Power - Max: 150 mW
• Mounting Type: Surface Mount
• Package / Case: SOT-723
• Supplier Device Package: VESM

package: -

TCK422G-L3F

Toshiba Semiconductor and Storage

LOAD SWITCH (GATE DRIVER) IC WCS

• Driven Configuration: High-Side
• Channel Type: Single
• Number of Drivers: 1
• Gate Type: N-Channel MOSFET
• Voltage - Supply: 2.7V ~ 28V
• Logic Voltage - VIL, VIH: 0.4V, 1.2V
• Current - Peak Output (Source, Sink): -
• Input Type: Non-Inverting
• High Side Voltage - Max (Bootstrap): -
• Rise / Fall Time (Typ): -
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 6-XFBGA, WLCSP
• Supplier Device Package: 6-WCSPG (0.8x1.2)

package: -

RN4985FE-LXHF-CT

Toshiba Semiconductor and Storage

AUTO AEC-Q TR NPN+PNP Q1BSR=2.2K

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 2.2kOhms
• Resistor - Emitter Base (R2) (Ohms): 47kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 250MHz, 200MHz
• Power - Max: 100mW
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-666
• Supplier Device Package: ES6

package: -

XK1R9F10QB-LXGQ

Toshiba Semiconductor and Storage

MOSFET N-CH 100V 160A TO220SM

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100 V
• Current - Continuous Drain (Id) @ 25°C: 160A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 3.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 184 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 11500 pF @ 10 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 375W (Tc)
• Rds On (Max) @ Id, Vgs: 1.92mOhm @ 80A, 10V
• Operating Temperature: 175°C
• Mounting Type: Surface Mount
• Supplier Device Package: TO-220SM(W)
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

package: -