Toshiba Semiconductor and Storage Producten

TK35N65W5,S1F

Toshiba Semiconductor and Storage

MOSFET N-CH 650V 35A TO-247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650V
• Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 2.1mA
• Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4100pF @ 300V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 270W (Tc)
• Rds On (Max) @ Id, Vgs: 95 mOhm @ 17.5A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247
• Package / Case: TO-247-3

package: TO-247-3

TK5P53D(T6RSS-Q)

Toshiba Semiconductor and Storage

MOSFET N-CH 525V 5A DPAK-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 525V
• Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 80W (Tc)
• Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2.5A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D-Pak
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

package: TO-252-3, DPak (2 Leads + Tab), SC-63

TPN14006NH,L1Q

Toshiba Semiconductor and Storage

MOSFET N CH 60V 13A 8TSON-ADV

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
• Vgs(th) (Max) @ Id: 4V @ 200µA
• Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 30V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 700mW (Ta), 30W (Tc)
• Rds On (Max) @ Id, Vgs: 14 mOhm @ 6.5A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-TSON Advance (3.3x3.3)
• Package / Case: 8-PowerVDFN

package: 8-PowerVDFN

TK35A65W,S5X

Toshiba Semiconductor and Storage

MOSFET N-CH 650V 35A TO-220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650V
• Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 2.1mA
• Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4100pF @ 300V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 50W (Tc)
• Rds On (Max) @ Id, Vgs: 80 mOhm @ 17.5A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220SIS
• Package / Case: TO-220-3 Full Pack, Isolated Tab

package: TO-220-3 Full Pack, Isolated Tab

TPWR8503NL,L1Q

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 150A 8DSOP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.3V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 800mW (Ta), 142W (Tc)
• Rds On (Max) @ Id, Vgs: 0.85 mOhm @ 50A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-DSOP Advance
• Package / Case: 8-PowerWDFN

package: 8-PowerWDFN

TK50P03M1(T6RSS-Q)

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 50A DP TO252-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.3V @ 200µA
• Gate Charge (Qg) (Max) @ Vgs: 25.3nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 47W (Tc)
• Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 25A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: DP
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

package: TO-252-3, DPak (2 Leads + Tab), SC-63

2SC2383-O,T6ALPF(M

Toshiba Semiconductor and Storage

TRANS NPN 1A 160V TO226-3

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 1A
• Voltage - Collector Emitter Breakdown (Max): 160V
• Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
• Current - Collector Cutoff (Max): 1µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 200mA, 5V
• Power - Max: 900mW
• Frequency - Transition: 100MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 Long Body
• Supplier Device Package: TO-92MOD

package: TO-226-3, TO-92-3 Long Body

RN2103CT(TPL3)

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 0.05W CST3

• Transistor Type: PNP - Pre-Biased
• Current - Collector (Ic) (Max): 50mA
• Voltage - Collector Emitter Breakdown (Max): 20V
• Resistor - Base (R1) (Ohms): 22k
• Resistor - Emitter Base (R2) (Ohms): 22k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: -
• Power - Max: 50mW
• Mounting Type: Surface Mount
• Package / Case: SC-101, SOT-883
• Supplier Device Package: CST3

package: SC-101, SOT-883

RN1103,LF(CT

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 0.1W SSM

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 22k
• Resistor - Emitter Base (R2) (Ohms): 22k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 250MHz
• Power - Max: 100mW
• Mounting Type: Surface Mount
• Package / Case: SC-75, SOT-416
• Supplier Device Package: SSM

package: SC-75, SOT-416

2SC2714-O(TE85L,F)

Toshiba Semiconductor and Storage

TRANS RF NPN 30V 550MHZ S-MINI

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 30V
• Frequency - Transition: 550MHz
• Noise Figure (dB Typ @ f): 2.5dB @ 100MHz
• Gain: 23dB
• Power - Max: 100mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 6V
• Current - Collector (Ic) (Max): 20mA
• Operating Temperature: 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: S-Mini

package: TO-236-3, SC-59, SOT-23-3

HN2C01FU-Y(TE85L,F

Toshiba Semiconductor and Storage

TRANS 2NPN 50V 0.15A US6

• Transistor Type: 2 NPN (Dual)
• Current - Collector (Ic) (Max): 150mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
• Power - Max: 200mW
• Frequency - Transition: 80MHz
• Operating Temperature: 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: US6

package: 6-TSSOP, SC-88, SOT-363

RN4606(TE85L,F)

Toshiba Semiconductor and Storage

TRANS NPN/PNP PREBIAS 0.3W SM6

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 4.7k
• Resistor - Emitter Base (R2) (Ohms): 47k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 100µA (ICBO)
• Frequency - Transition: 200MHz, 250MHz
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Package / Case: SC-74, SOT-457
• Supplier Device Package: SM6

package: SC-74, SOT-457

CES521,L3F

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 200MA ESC

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30V
• Current - Average Rectified (Io): 200mA
• Voltage - Forward (Vf) (Max) @ If: 500mV @ 200mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 30µA @ 30V
• Capacitance @ Vr, F: 26pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SC-79, SOD-523
• Supplier Device Package: ESC
• Operating Temperature - Junction: 125°C (Max)

package: SC-79, SOD-523

TRS16N65D,S1F

Toshiba Semiconductor and Storage

DIODE ARRAY SCHOTTKY 650V TO247

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 650V
• Current - Average Rectified (Io) (per Diode): 8A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.7V @ 8A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 90µA @ 650V
• Operating Temperature - Junction: 175°C (Max)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247

package: TO-247-3

HN2S02JE(TE85L,F)

Toshiba Semiconductor and Storage

DIODE ARRAY SCHOTTKY 40V ESV

• Diode Configuration: 2 Independent
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40V
• Current - Average Rectified (Io) (per Diode): 100mA
• Voltage - Forward (Vf) (Max) @ If: 600mV @ 100mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5µA @ 40V
• Operating Temperature - Junction: 125°C (Max)
• Mounting Type: Surface Mount
• Package / Case: SOT-553
• Supplier Device Package: ESV

package: SOT-553

TC7S14FU,LF

Toshiba Semiconductor and Storage

IC GATE USV L-MOS

• Logic Type: Inverter
• Number of Circuits: 1
• Number of Inputs: 1
• Features: Schmitt Trigger
• Voltage - Supply: 2 V ~ 6 V
• Current - Quiescent (Max): 1µA
• Current - Output High, Low: 2.6mA, 2.6mA
• Logic Level - Low: 0.3 V ~ 1.5 V
• Logic Level - High: 1.5 V ~ 4.2 V
• Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Supplier Device Package: USV
• Package / Case: 5-TSSOP, SC-70-5, SOT-353

package: 5-TSSOP, SC-70-5, SOT-353

TC74HC4066AF-ELF

Toshiba Semiconductor and Storage

IC MUX/DEMUX QUAD SPST SOP14

• Switch Circuit: SPST - NO
• Multiplexer/Demultiplexer Circuit: 1:1
• Number of Circuits: 4
• On-State Resistance (Max): 80 Ohm
• Channel-to-Channel Matching (ΔRon): 5 Ohm
• Voltage - Supply, Single (V+): 2 V ~ 12 V
• Voltage - Supply, Dual (V±): -
• Switch Time (Ton, Toff) (Max): 12ns, 18ns
• -3db Bandwidth: 200MHz
• Charge Injection: -
• Channel Capacitance (CS(off), CD(off)): 10pF
• Current - Leakage (IS(off)) (Max): 1µA
• Crosstalk: -60dB @ 1MHz
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 14-SOIC (0.209", 5.30mm Width)
• Supplier Device Package: 14-SOP

package: 14-SOIC (0.209", 5.30mm Width)

TL1L4-NW0,L4A5B

Toshiba Semiconductor and Storage

POWER LED WHT 5000K 3535

• Color: White, Cool
• CCT (K): 5000K
• Flux @ 85°C, Current - Test: 150 lm (140 lm ~ 160 lm)
• Flux @ 25°C, Current - Test: -
• Current - Test: 350mA
• Voltage - Forward (Vf) (Typ): 2.8V
• Lumens/Watt @ Current - Test: 153 lm/W
• CRI (Color Rendering Index): 70
• Current - Max: 1.5A
• Viewing Angle: 120°
• Mounting Type: Surface Mount
• Package / Case: 1414 (3535 Metric)
• Supplier Device Package: 3535
• Size / Dimension: 0.138" L x 0.138" W (3.50mm x 3.50mm)
• Height - Seated (Max): 0.085" (2.15mm)

package: 1414 (3535 Metric)

DF5A3.6F(TE85L,F)

Toshiba Semiconductor and Storage

TVS DIODE 1VWM SMV

• Type: Zener
• Unidirectional Channels: 4
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 1V
• Voltage - Breakdown (Min): 3.4V
• Voltage - Clamping (Max) @ Ipp: -
• Current - Peak Pulse (10/1000µs): -
• Power - Peak Pulse: -
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: 110pF @ 1MHz
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: SC-74A, SOT-753
• Supplier Device Package: SMV

package: SC-74A, SOT-753

TLP3127(F

Toshiba Semiconductor and Storage

PHOTORELAY SPST-NO 1.3A 30V

• Circuit: SPST-NO (1 Form A)
• Output Type: AC, DC
• On-State Resistance (Max): -
• Load Current: 1.3A
• Voltage - Input: 1.33VDC
• Voltage - Load: 0 ~ 60 V
• Mounting Type: Surface Mount
• Termination Style: Gull Wing
• Package / Case: 4-SOP (0.173", 4.40mm)
• Supplier Device Package: 4-SOP (2.54mm)
• Relay Type: Relay

package: 4-SOP (0.173", 4.40mm)

TLP3419(TP,F)

Toshiba Semiconductor and Storage

PHOTORELAY SPST-NO 200MA 80V

• Circuit: SPST-NO (1 Form A)
• Output Type: AC, DC
• On-State Resistance (Max): 8 Ohm
• Load Current: 200mA
• Voltage - Input: 1.27VDC
• Voltage - Load: 0 ~ 80 V
• Mounting Type: Surface Mount
• Termination Style: SMD (SMT) Tab
• Package / Case: 4-SMD (0.096", 2.45mm)
• Supplier Device Package: 4-VSON
• Relay Type: Relay

package: 4-SMD (0.096", 2.45mm)

TLP184(GB-TPL,SE

Toshiba Semiconductor and Storage

OPTOISO 3.75KV TRANS 6-SO 4 LEAD

• Number of Channels: 1
• Voltage - Isolation: 3750Vrms
• Current Transfer Ratio (Min): 100% @ 5mA
• Current Transfer Ratio (Max): 600% @ 5mA
• Turn On / Turn Off Time (Typ): 3µs, 3µs
• Rise / Fall Time (Typ): 2µs, 3µs
• Input Type: AC, DC
• Output Type: Transistor
• Voltage - Output (Max): 80V
• Current - Output / Channel: 50mA
• Voltage - Forward (Vf) (Typ): 1.25V
• Current - DC Forward (If) (Max): 50mA
• Vce Saturation (Max): 300mV
• Operating Temperature: -55°C ~ 110°C
• Mounting Type: Surface Mount
• Package / Case: 6-SMD (4 Leads), Gull Wing
• Supplier Device Package: 6-SO, 4 Lead

package: 6-SMD (4 Leads), Gull Wing

TC74ACT00P(F)

Toshiba Semiconductor and Storage

IC GATE NAND 4CH 2-INP 14DIP

• Logic Type: NAND Gate
• Number of Circuits: 4
• Number of Inputs: 2
• Features: -
• Voltage - Supply: 4.5 V ~ 5.5 V
• Current - Quiescent (Max): 4µA
• Current - Output High, Low: 24mA, 24mA
• Logic Level - Low: 0.8V
• Logic Level - High: 2V
• Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Through Hole
• Supplier Device Package: 14-DIP
• Package / Case: 14-DIP (0.300", 7.62mm)

package: 14-DIP (0.300", 7.62mm)

RN4908-LXHF-CT

Toshiba Semiconductor and Storage

AUTO AEC-Q TR PNP + NPN BRT, Q1B

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 22kOhms
• Resistor - Emitter Base (R2) (Ohms): 47kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 200MHz, 250MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: US6

package: -

SSM6K404TU-LF

Toshiba Semiconductor and Storage

MOSFET N-CH 20V 3A UF6

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20 V
• Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
• Vgs(th) (Max) @ Id: 1V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 4 V
• Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 10 V
• Vgs (Max): ±10V
• FET Feature: -
• Power Dissipation (Max): 500mW (Ta)
• Rds On (Max) @ Id, Vgs: 55mOhm @ 2A, 4V
• Operating Temperature: 150°C
• Mounting Type: Surface Mount
• Supplier Device Package: UF6
• Package / Case: 6-SMD, Flat Leads

package: -

TCR3RM28A-LF-SE

Toshiba Semiconductor and Storage

LDO REG 2.8V 300MA 4DFNC

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 2.8V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.15V @ 300mA
• Current - Output: 300mA
• Current - Quiescent (Iq): 12 µA
• Current - Supply (Max): -
• PSRR: 100dB ~ 68dB (1kHz ~ 1MHz)
• Control Features: Current Limit, Enable
• Protection Features: Over Current, Over Temperature
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 4-XDFN Exposed Pad
• Supplier Device Package: 4-DFNC (1x1)

package: -

TPC8207-TE12L

Toshiba Semiconductor and Storage

MOSFET 2N-CH 20V 6A 8-SOP

• FET Type: MOSFET (Metal Oxide)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 6A
• Rds On (Max) @ Id, Vgs: 20mOhm @ 4.8A, 4V
• Vgs(th) (Max) @ Id: 1.2V @ 200µA
• Gate Charge (Qg) (Max) @ Vgs: 22nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 2010pF @ 10V
• Power - Max: 750mW
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.173", 4.40mm Width)
• Supplier Device Package: 8-SOP (5.5x6.0)

package: -

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TPCA8047-H-T2L1-VM

Toshiba Semiconductor and Storage

MOSFET N-CH 40V 32A 8SOP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40 V
• Current - Continuous Drain (Id) @ 25°C: 32A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.3V @ 500µA
• Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 3365 pF @ 10 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
• Rds On (Max) @ Id, Vgs: 7.3mOhm @ 16A, 10V
• Operating Temperature: 150°C
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SOP Advance (5x5)
• Package / Case: 8-PowerVDFN

package: -

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