Pagina 3 - Rohm Semiconductor Producten - Transistors - FET's, MOSFET's - Arrays | Heisener Electronics
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Rohm Semiconductor Producten - Transistors - FET's, MOSFET's - Arrays

Archief 313
Pagina  3/12
Afbeelding
Onderdeelnummer
Fabrikant
Omschrijving
package
Voorraad
Aantal
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
QH8K22TCR
Rohm Semiconductor

MOSFET 2N-CH 40V 6.5A TSMT8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 46mOhm @ 6.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 10µA
  • Gate Charge (Qg) (Max) @ Vgs: 2.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 195pF @ 20V
  • Power - Max: 1.1W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: TSMT8
package: -
Voorraad54.453
-
40V
6.5A (Ta)
46mOhm @ 6.5A, 10V
2.5V @ 10µA
2.6nC @ 10V
195pF @ 20V
1.1W (Ta)
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
TSMT8
SP8K33TB1
Rohm Semiconductor

MOSFET 2N-CH 60V 8SOP

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
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BSM300D12P4G101
Rohm Semiconductor

SIC 2N-CH 1200V 291A MODULE

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 291A (Tc)
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: 4.8V @ 145.6mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 30000pF @ 10V
  • Power - Max: 925W (Tc)
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
package: -
Voorraad24
-
1200V (1.2kV)
291A (Tc)
-
4.8V @ 145.6mA
-
30000pF @ 10V
925W (Tc)
175°C (TJ)
Chassis Mount
Module
Module
SH8K26GZ0TB
Rohm Semiconductor

MOSFET 2N-CH 40V 6A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
  • Rds On (Max) @ Id, Vgs: 38mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 10V
  • Power - Max: 2W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
package: -
Voorraad7.134
-
40V
6A (Ta)
38mOhm @ 6A, 10V
2.5V @ 1mA
2.9nC @ 5V
280pF @ 10V
2W (Ta)
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
SH8K52GZETB
Rohm Semiconductor

MOSFET 2N-CH 100V 3A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
  • Rds On (Max) @ Id, Vgs: 170mOhm @ 3A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V
  • Power - Max: 1.4W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
package: -
Voorraad29.685
-
100V
3A (Ta)
170mOhm @ 3A, 10V
2.5V @ 1mA
8.5nC @ 5V
610pF @ 25V
1.4W (Ta)
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
SP8K32TB1
Rohm Semiconductor

MOSFET 2N-CH 60V 4.5A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate, 4V Drive
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 65mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V
  • Power - Max: 2W (Ta)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
package: -
Request a Quote
Logic Level Gate, 4V Drive
60V
4.5A (Ta)
65mOhm @ 4.5A, 10V
2.5V @ 1mA
10nC @ 5V
500pF @ 10V
2W (Ta)
150°C
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
UT6K30TCR
Rohm Semiconductor

MOSFET 2N-CH 60V 3A HUML2020L8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
  • Rds On (Max) @ Id, Vgs: 153mOhm @ 3A, 10V
  • Vgs(th) (Max) @ Id: 2.7V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 30V
  • Power - Max: 2W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-PowerUDFN
  • Supplier Device Package: HUML2020L8
package: -
Voorraad9.969
-
60V
3A (Ta)
153mOhm @ 3A, 10V
2.7V @ 50µA
2.1nC @ 10V
110pF @ 30V
2W (Ta)
150°C (TJ)
Surface Mount
6-PowerUDFN
HUML2020L8
SH8JE5TB1
Rohm Semiconductor

MOSFET 2P-CH 100V 4.5A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 91mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 50V
  • Power - Max: 2W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
package: -
Voorraad9.000
-
100V
4.5A (Ta)
91mOhm @ 4.5A, 10V
2.5V @ 1mA
52nC @ 10V
2100pF @ 50V
2W (Ta)
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
UT6KE5TCR
Rohm Semiconductor

MOSFET 2N-CH 100V 2A HUML2020L8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Rds On (Max) @ Id, Vgs: 207mOhm @ 2A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 50V
  • Power - Max: 2W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-PowerUDFN
  • Supplier Device Package: HUML2020L8
package: -
Voorraad9.000
-
100V
2A (Ta)
207mOhm @ 2A, 10V
2.5V @ 1mA
2.8nC @ 10V
90pF @ 50V
2W (Ta)
150°C (TJ)
Surface Mount
6-PowerUDFN
HUML2020L8
SP8M41HZGTB
Rohm Semiconductor

MOSFET N/P-CH 80V 3.4A/2.6A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 2.6A (Ta)
  • Rds On (Max) @ Id, Vgs: 130mOhm @ 3.4A, 10V, 240mOhm @ 2.6A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 5V, 11.5nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V, 1000pF @ 10V
  • Power - Max: 2W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
package: -
Voorraad6.426
-
80V
3.4A (Ta), 2.6A (Ta)
130mOhm @ 3.4A, 10V, 240mOhm @ 2.6A, 10V
2.5V @ 1mA
9.2nC @ 5V, 11.5nC @ 5V
600pF @ 10V, 1000pF @ 10V
2W (Ta)
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
SH8M31GZETB
Rohm Semiconductor

MOSFET N/P-CH 60V 4.5A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 65mOhm @ 4.5A, 10V, 70mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 7nC @ 5V, 40nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V, 2500pF @ 10V
  • Power - Max: 2W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
package: -
Voorraad7.398
-
60V
4.5A (Ta)
65mOhm @ 4.5A, 10V, 70mOhm @ 4.5A, 10V
3V @ 1mA
7nC @ 5V, 40nC @ 10V
500pF @ 10V, 2500pF @ 10V
2W (Ta)
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
HP8K24TB
Rohm Semiconductor

MOSFET 2N-CH 30V 15A/27A 8HSOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 27A (Tc), 26A (Ta), 80A (Tc)
  • Rds On (Max) @ Id, Vgs: 8.8mOhm @ 15A, 10V, 3mOhm @ 26A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V, 36nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 15V, 2410pF @ 15V
  • Power - Max: 3W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-HSOP
package: -
Voorraad28.368
-
30V
15A (Ta), 27A (Tc), 26A (Ta), 80A (Tc)
8.8mOhm @ 15A, 10V, 3mOhm @ 26A, 10V
2.5V @ 1mA
10nC @ 10V, 36nC @ 10V
590pF @ 15V, 2410pF @ 15V
3W (Ta)
150°C (TJ)
Surface Mount
8-PowerTDFN
8-HSOP
UT6JB5TCR
Rohm Semiconductor

MOSFET 2P-CH 40V 3.5A HUML2020L8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 122mOhm @ 3.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 265pF @ 20V
  • Power - Max: 2W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-PowerUDFN
  • Supplier Device Package: HUML2020L8
package: -
Voorraad7.044
-
40V
3.5A (Ta)
122mOhm @ 3.5A, 10V
2.5V @ 1mA
6.2nC @ 10V
265pF @ 20V
2W (Ta)
150°C (TJ)
Surface Mount
6-PowerUDFN
HUML2020L8
SP8K33HZGTB
Rohm Semiconductor

MOSFET 2N-CH 60V 5A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
  • Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 10V
  • Power - Max: 2W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
package: -
Voorraad6.885
-
60V
5A (Ta)
48mOhm @ 5A, 10V
2.5V @ 1mA
12nC @ 5V
620pF @ 10V
2W (Ta)
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
SP8K33FRATB
Rohm Semiconductor

MOSFET 2N-CH 60V 5A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
  • Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 10V
  • Power - Max: 2W
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
package: -
Voorraad7.500
-
60V
5A (Ta)
48mOhm @ 5A, 10V
2.5V @ 1mA
12nC @ 5V
620pF @ 10V
2W
150°C
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
SP8K3FRATB
Rohm Semiconductor

MOSFET 2N-CH 30V 7A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
  • Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
  • Power - Max: 1.4W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
package: -
Voorraad3.153
-
30V
7A (Ta)
24mOhm @ 7A, 10V
2.5V @ 1mA
11.8nC @ 5V
600pF @ 10V
1.4W (Ta)
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
QH8KB5TCR
Rohm Semiconductor

MOSFET 2N-CH 40V 4.5A TSMT8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 44mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 20V
  • Power - Max: 1.1W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: TSMT8
package: -
Voorraad2.898
-
40V
4.5A (Ta)
44mOhm @ 4.5A, 10V
2.5V @ 1mA
3.5nC @ 10V
150pF @ 20V
1.1W (Ta)
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
TSMT8
SP8M4HZGTB
Rohm Semiconductor

MOSFET N/P-CH 30V 9A/7A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 7A (Ta)
  • Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 10V, 28mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V, 25nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V, 2600pF @ 10V
  • Power - Max: 1.4W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
package: -
Voorraad5.937
-
30V
9A (Ta), 7A (Ta)
18mOhm @ 9A, 10V, 28mOhm @ 7A, 10V
2.5V @ 1mA
15nC @ 5V, 25nC @ 5V
1190pF @ 10V, 2600pF @ 10V
1.4W (Ta)
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
SP8M4FRATB
Rohm Semiconductor

MOSFET N/P-CH 30V 9A/7A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 7A (Ta)
  • Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 10V, 28mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V, 25nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V, 2600pF @ 10V
  • Power - Max: 2W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
package: -
Request a Quote
-
30V
9A (Ta), 7A (Ta)
18mOhm @ 9A, 10V, 28mOhm @ 7A, 10V
2.5V @ 1mA
15nC @ 5V, 25nC @ 5V
1190pF @ 10V, 2600pF @ 10V
2W
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
QH8KB6TCR
Rohm Semiconductor

MOSFET 2N-CH 40V 8A TSMT8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
  • Rds On (Max) @ Id, Vgs: 17.7mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 20V
  • Power - Max: 1.1W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: TSMT8
package: -
Voorraad17.850
-
40V
8A (Ta)
17.7mOhm @ 8A, 10V
2.5V @ 1mA
10.6nC @ 10V
530pF @ 20V
1.1W (Ta)
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
TSMT8
SH8MC5TB1
Rohm Semiconductor

MOSFET N/P-CH 60V 6.5A/7A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 7A (Ta)
  • Rds On (Max) @ Id, Vgs: 32mOhm @ 6.5A, 10V, 33mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 7.6nC @ 10V, 50nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 30V, 2630pF @ 30V
  • Power - Max: 2W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
package: -
Voorraad6.063
-
60V
6.5A (Ta), 7A (Ta)
32mOhm @ 6.5A, 10V, 33mOhm @ 7A, 10V
2.5V @ 1mA
7.6nC @ 10V, 50nC @ 10V
460pF @ 30V, 2630pF @ 30V
2W (Ta)
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
BSM400D12P3G002
Rohm Semiconductor

SIC 2N-CH 1200V 400A MODULE

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 400A (Tc)
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: 5.6V @ 109.2mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 17000pF @ 10V
  • Power - Max: 1570W (Tc)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
package: -
Voorraad6
-
1200V (1.2kV)
400A (Tc)
-
5.6V @ 109.2mA
-
17000pF @ 10V
1570W (Tc)
-40°C ~ 150°C (TJ)
Chassis Mount
Module
Module
HP8KB6TB1
Rohm Semiconductor

40V 24A, DUAL NCH+NCH, HSOP8, PO

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 24A (Tc)
  • Rds On (Max) @ Id, Vgs: 15.7mOhm @ 10.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 20V
  • Power - Max: 3W (Ta), 21W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-HSOP
package: -
Voorraad7.500
-
40V
10.5A (Ta), 24A (Tc)
15.7mOhm @ 10.5A, 10V
2.5V @ 1mA
10.6nC @ 10V
530pF @ 20V
3W (Ta), 21W (Tc)
150°C (TJ)
Surface Mount
8-PowerTDFN
8-HSOP
HP8KB7TB1
Rohm Semiconductor

40V 24A, DUAL NCH+NCH, HSOP8, PO

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 24A (Tc)
  • Rds On (Max) @ Id, Vgs: 8mOhm @ 16A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 20V
  • Power - Max: 3W (Ta), 26W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-HSOP
package: -
Voorraad7.500
-
40V
16A (Ta), 24A (Tc)
8mOhm @ 16A, 10V
2.5V @ 1mA
27nC @ 10V
1570pF @ 20V
3W (Ta), 26W (Tc)
150°C (TJ)
Surface Mount
8-PowerTDFN
8-HSOP
SH8JC5TB1
Rohm Semiconductor

MOSFET 2P-CH 60V 7.5A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 32mOhm @ 7.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2630pF @ 30V
  • Power - Max: 1.4W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
package: -
Voorraad20.205
-
60V
7.5A (Ta)
32mOhm @ 7.5A, 10V
2.5V @ 1mA
50nC @ 10V
2630pF @ 30V
1.4W (Ta)
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
UT6KC5TCR
Rohm Semiconductor

MOSFET 2N-CH 60V 3.5A 8DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 95mOhm @ 3.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 30V
  • Power - Max: 2W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerUDFN
  • Supplier Device Package: DFN2020-8D
package: -
Voorraad3.987
-
60V
3.5A (Ta)
95mOhm @ 3.5A, 10V
2.5V @ 1mA
3.1nC @ 10V
135pF @ 30V
2W (Ta)
150°C (TJ)
Surface Mount
8-PowerUDFN
DFN2020-8D
SP8J5FRATB
Rohm Semiconductor

MOSFET 2P-CH 7A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate, 4V Drive
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
  • Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
package: -
Request a Quote
Logic Level Gate, 4V Drive
-
7A (Ta)
28mOhm @ 7A, 10V
2.5V @ 1mA
-
-
-
150°C
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
SP8K80TB1
Rohm Semiconductor

MOSFET 2N-CH 500V 0.5A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
  • Rds On (Max) @ Id, Vgs: 11.7Ohm @ 250mA, 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 3.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 23.5pF @ 25V
  • Power - Max: 2W (Ta)
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
package: -
Voorraad7.986
-
500V
500mA (Ta)
11.7Ohm @ 250mA, 10V
5V @ 1mA
3.8nC @ 10V
23.5pF @ 25V
2W (Ta)
-
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP