Rohm Semiconductor Producten - Transistors - FET's, MOSFET's - Arrays

SH8K39GZETB

Rohm Semiconductor

MOSFET 2N-CH 60V 8A 8SOP

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
• Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V
• Vgs(th) (Max) @ Id: 2.7V @ 200µA
• Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 30V
• Power - Max: 1.4W (Ta)
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOP

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BSM180D12P2E002

Rohm Semiconductor

SIC 2N-CH 1200V 204A MODULE

• FET Type: Silicon Carbide (SiC)
• FET Feature: -
• Drain to Source Voltage (Vdss): 1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C: 204A (Tc)
• Rds On (Max) @ Id, Vgs: -
• Vgs(th) (Max) @ Id: 4V @ 35.2mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 18000pF @ 10V
• Power - Max: 1360W (Tc)
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

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SP8K3FD5TB1

Rohm Semiconductor

MOSFET 2N-CH 30V 8SOP

• FET Type: -
• FET Feature: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Rds On (Max) @ Id, Vgs: -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Power - Max: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

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SH8MA3TB1

Rohm Semiconductor

MOSFET N/P-CH 30V 7A/6A 8SOP

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 6A (Ta)
• Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V, 50mOhm @ 6A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 10V, 10nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 15V, 480pF @ 15V
• Power - Max: 2W (Ta)
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOP

package: -

SP8M8FD5TB1

Rohm Semiconductor

MOSFET N/P-CH 30V 6A/4.5A 8SOP

• FET Type: MOSFET (Metal Oxide)
• FET Feature: Logic Level Gate, 4V Drive
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 4.5A (Ta)
• Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V, 56mOhm @ 4.5A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 5V, 8.5nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V, 850pF @ 10V
• Power - Max: 2W (Ta)
• Operating Temperature: 150°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOP

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SH8MA4TB1

Rohm Semiconductor

MOSFET N/P-CH 30V 9A/8.5A 8SOP

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 8.5A (Ta)
• Rds On (Max) @ Id, Vgs: 21.4mOhm @ 9A, 10V, 29.6mOhm @ 8.5A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V, 19.6nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 15V, 890pF @ 15V
• Power - Max: 2W (Ta)
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOP

package: -

SP8K22HZGTB

Rohm Semiconductor

MOSFET 2N-CH 45V 4.5A 8SOP

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 45V
• Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
• Rds On (Max) @ Id, Vgs: 46mOhm @ 4.5A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V
• Power - Max: 1.4W (Ta)
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOP

package: -

SP8M51FRATB

Rohm Semiconductor

MOSFET N/P-CH 100V 3A/2.5A 8SOP

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 2.5A (Ta)
• Rds On (Max) @ Id, Vgs: 170mOhm @ 3A, 10V, 290mOhm @ 2.5A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V, 12.5nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 10V, 1550pF @ 25V
• Power - Max: 2W
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOP

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SP8K22FRATB

Rohm Semiconductor

MOSFET 2N-CH 45V 4.5A 8SOP

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 45V
• Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
• Rds On (Max) @ Id, Vgs: 46mOhm @ 4.5A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V
• Power - Max: 2W
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOP

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BSM600D12P3G001

Rohm Semiconductor

SIC 2N-CH 1200V 600A MODULE

• FET Type: Silicon Carbide (SiC)
• FET Feature: -
• Drain to Source Voltage (Vdss): 1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C: 600A (Tc)
• Rds On (Max) @ Id, Vgs: -
• Vgs(th) (Max) @ Id: 5.6V @ 182mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 31000pF @ 10V
• Power - Max: 2450W (Tc)
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

package: -

SP8M3FD5TB1

Rohm Semiconductor

MOSFET N/P-CH 30V 8SOP

• FET Type: -
• FET Feature: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Rds On (Max) @ Id, Vgs: -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Power - Max: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

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SP8M51HZGTB

Rohm Semiconductor

MOSFET N/P-CH 100V 3A/2.5A 8SOP

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 2.5A (Ta)
• Rds On (Max) @ Id, Vgs: 170mOhm @ 3A, 10V, 290mOhm @ 2.5A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V, 12.5nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V, 1550pF @ 25V
• Power - Max: 2W (Ta)
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOP

package: -

HT8KB5TB1

Rohm Semiconductor

40V 12A, DUAL NCH+NCH, HSMT8, PO

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 12A (Tc)
• Rds On (Max) @ Id, Vgs: 47mOhm @ 5A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 20V
• Power - Max: 2W (Ta), 13W (Tc)
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-PowerVDFN
• Supplier Device Package: 8-HSMT (3.2x3)

package: -

BSM250D17P2E004

Rohm Semiconductor

SIC 2N-CH 1700V 250A MODULE

• FET Type: Silicon Carbide (SiC)
• FET Feature: -
• Drain to Source Voltage (Vdss): 1700V (1.7kV)
• Current - Continuous Drain (Id) @ 25°C: 250A (Tc)
• Rds On (Max) @ Id, Vgs: -
• Vgs(th) (Max) @ Id: 4V @ 66mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 30000pF @ 10V
• Power - Max: 1800W (Tc)
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

package: -

QH8M22TCR

Rohm Semiconductor

MOSFET N/P-CH 40V 4.5A/2A TSMT8

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 2A (Ta)
• Rds On (Max) @ Id, Vgs: 46mOhm @ 4.5A, 10V, 190mOhm @ 2A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 10µA, 3V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 2.6nC @ 10V, 9.5nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 193pF @ 20V, 450pF @ 20V
• Power - Max: 1.1W (Ta)
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SMD, Flat Lead
• Supplier Device Package: TSMT8

package: -

BSM450D12P4G102

Rohm Semiconductor

SIC 2N-CH 1200V 447A MODULE

• FET Type: Silicon Carbide (SiC)
• FET Feature: -
• Drain to Source Voltage (Vdss): 1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C: 447A (Tc)
• Rds On (Max) @ Id, Vgs: -
• Vgs(th) (Max) @ Id: 4.8V @ 218.4mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 44000pF @ 10V
• Power - Max: 1.45kW (Tc)
• Operating Temperature: 175°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

package: -

UT6ME5TCR

Rohm Semiconductor

MOSFET N/P-CH 100V 2A HUML2020L8

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 2A (Ta), 1A (Ta)
• Rds On (Max) @ Id, Vgs: 207mOhm @ 2A, 10V, 840mOhm @ 1A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 10V, 6.7nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 50V
• Power - Max: 2W (Ta)
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-PowerUDFN
• Supplier Device Package: HUML2020L8

package: -

SH8K25GZ0TB

Rohm Semiconductor

MOSFET 2N-CH 40V 5.2A 8SOP

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
• Rds On (Max) @ Id, Vgs: 85mOhm @ 5.2A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 10V
• Power - Max: 2W (Ta)
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOP

package: -

SH8K51GZETB

Rohm Semiconductor

MOSFET 2N-CH 35V 4A 8SOP

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 35V
• Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
• Rds On (Max) @ Id, Vgs: 58mOhm @ 4A, 10V
• Vgs(th) (Max) @ Id: 2.8V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V
• Power - Max: 1.4W (Ta)
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOP

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UT6JE5TCR

Rohm Semiconductor

MOSFET 2P-CH 100V 1A HUML2020L8

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
• Rds On (Max) @ Id, Vgs: 840mOhm @ 1A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 50V
• Power - Max: 2W (Ta)
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-PowerUDFN
• Supplier Device Package: HUML2020L8

package: -

SH8KB6TB1

Rohm Semiconductor

MOSFET 2N-CH 40V 8.5A 8SOP

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
• Rds On (Max) @ Id, Vgs: 19.4mOhm @ 8.5A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 20V
• Power - Max: 2W (Ta)
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOP

package: -

SH8KB7TB1

Rohm Semiconductor

MOSFET 2N-CH 40V 13.5A 8SOP

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta)
• Rds On (Max) @ Id, Vgs: 8.4mOhm @ 13.5A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 20V
• Power - Max: 2W (Ta)
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOP

package: -

QH8MB5TCR

Rohm Semiconductor

MOSFET N/P-CH 40V 4.5A/5A TSMT8

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 5A (Ta)
• Rds On (Max) @ Id, Vgs: 44mOhm @ 4.5A, 10V, 41mOhm @ 5A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V, 17.2nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 20V, 920pF @ 20V
• Power - Max: 1.1W (Ta)
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SMD, Flat Lead
• Supplier Device Package: TSMT8

package: -

QH8KE5TCR

Rohm Semiconductor

100V 2.0A, DUAL NCH+NCH, TSMT8,

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
• Rds On (Max) @ Id, Vgs: 202mOhm @ 2A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 50V
• Power - Max: 1.5W (Ta)
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SMD, Flat Lead
• Supplier Device Package: TSMT8

package: -

SH8MA2GZETB

Rohm Semiconductor

MOSFET N/P-CH 30V 4.5A 8SOP

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
• Rds On (Max) @ Id, Vgs: 80mOhm @ 4.5A, 10V, 82mOhm @ 4.5A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V, 6.7nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 125pF @ 15V, 305pF @ 15V
• Power - Max: 1.4W (Ta)
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOP

package: -

SP8K32HZGTB

Rohm Semiconductor

MOSFET 2N-CH 60V 4.5A 8SOP

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
• Rds On (Max) @ Id, Vgs: 65mOhm @ 4.5A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V
• Power - Max: 2W (Ta)
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOP

package: -

SH8M51GZETB

Rohm Semiconductor

MOSFET N/P-CH 100V 3A/2.5A 8SOP

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 2.5A (Ta)
• Rds On (Max) @ Id, Vgs: 170mOhm @ 3A, 10V, 290mOhm @ 2.5A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V, 12.5nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V, 1550pF @ 25V
• Power - Max: 1.4W (Ta)
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOP

package: -

QH8KE6TCR

Rohm Semiconductor

100V 4A, DUAL NCH+NCH, TSMT8

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
• Rds On (Max) @ Id, Vgs: 56mOhm @ 4A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 50V
• Power - Max: 1.1W (Ta)
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SMD, Flat Lead
• Supplier Device Package: TSMT8

package: -