Microsemi Corporation Producten - Transistors - IGBT's - Single

APT95GR65JDU60

Microsemi Corporation

INSULATED GATE BIPOLAR TRANSISTO

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 650V
• Current - Collector (Ic) (Max): 135A
• Current - Collector Pulsed (Icm): 380A
• Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 95A
• Power - Max: 446W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: 420nC
• Td (on/off) @ 25°C: 29ns/226ns
• Test Condition: 433V, 95A, 4.3 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: SOT-227-4, miniBLOC
• Supplier Device Package: SOT-227

package: SOT-227-4, miniBLOC

APT50GP60LDLG

Microsemi Corporation

IGBT 600V 150A 625W TO264

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 150A
• Current - Collector Pulsed (Icm): 190A
• Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
• Power - Max: 625W
• Switching Energy: 456µJ (on), 635µJ (off)
• Input Type: Standard
• Gate Charge: 165nC
• Td (on/off) @ 25°C: 19ns/85ns
• Test Condition: 400V, 50A, 4.3 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-264-3, TO-264AA
• Supplier Device Package: TO-264

package: TO-264-3, TO-264AA

APT30GS60KRG

Microsemi Corporation

IGBT 600V 54A 250W TO220

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 54A
• Current - Collector Pulsed (Icm): 113A
• Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 30A
• Power - Max: 250W
• Switching Energy: 570µJ (off)
• Input Type: Standard
• Gate Charge: 145nC
• Td (on/off) @ 25°C: 16ns/360ns
• Test Condition: 400V, 30A, 9.1 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220

package: TO-220-3

APT44GA60BD30C

Microsemi Corporation

IGBT 600V 78A 337W TO247

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 78A
• Current - Collector Pulsed (Icm): 130A
• Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 26A
• Power - Max: 337W
• Switching Energy: 409µJ (on), 450µJ (off)
• Input Type: Standard
• Gate Charge: 128nC
• Td (on/off) @ 25°C: 16ns/102ns
• Test Condition: 400V, 26A, 4.7 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247 [B]

package: TO-247-3

APT102GA60B2

Microsemi Corporation

IGBT 600V 183A 780W TO247

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 183A
• Current - Collector Pulsed (Icm): 307A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 62A
• Power - Max: 780W
• Switching Energy: 1.354mJ (on), 1.614mJ (off)
• Input Type: Standard
• Gate Charge: 294nC
• Td (on/off) @ 25°C: 28ns/212ns
• Test Condition: 400V, 62A, 4.7 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3 Variant
• Supplier Device Package: -

package: TO-247-3 Variant

APT75GN60B2DQ3G

Microsemi Corporation

IGBT 600V 155A 536W TO264

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 155A
• Current - Collector Pulsed (Icm): 225A
• Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 75A
• Power - Max: 536W
• Switching Energy: 2500µJ (on), 2140µJ (off)
• Input Type: Standard
• Gate Charge: 485nC
• Td (on/off) @ 25°C: 47ns/385ns
• Test Condition: 400V, 75A, 1 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: Through Hole
• Package / Case: TO-264-3, TO-264AA
• Supplier Device Package: -

package: TO-264-3, TO-264AA