Pagina 35 - Infineon Technologies Producten - Transistors - FET's, MOSFET's - Single | Heisener Electronics
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Infineon Technologies Producten - Transistors - FET's, MOSFET's - Single

Archief 8.381
Pagina  35/300
Afbeelding
Onderdeelnummer
Fabrikant
Omschrijving
package
Voorraad
Aantal
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
IPW60R125CFD7XKSA1
Infineon Technologies

MOSFET N-CH 600V 18A TO247-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 390µA
  • Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1503 pF @ 400 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 92W (Tc)
  • Rds On (Max) @ Id, Vgs: 125mOhm @ 7.8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO247-3
  • Package / Case: TO-247-3
package: -
Voorraad375
MOSFET (Metal Oxide)
600 V
18A (Tc)
10V
4.5V @ 390µA
36 nC @ 10 V
1503 pF @ 400 V
±20V
-
92W (Tc)
125mOhm @ 7.8A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PG-TO247-3
TO-247-3
IQE065N10NM5CGSCATMA1
Infineon Technologies

OPTIMOS LOWVOLTAGE POWER MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 85A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.8V @ 48µA
  • Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-WHTFN-9-1
  • Package / Case: 9-PowerWDFN
package: -
Request a Quote
MOSFET (Metal Oxide)
100 V
13A (Ta), 85A (Tc)
6V, 10V
3.8V @ 48µA
43 nC @ 10 V
3000 pF @ 50 V
±20V
-
2.5W (Ta), 100W (Tc)
6.5mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-WHTFN-9-1
9-PowerWDFN
94-2498
Infineon Technologies

IC MOSFET

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IMZA65R027M1HXKSA1
Infineon Technologies

MOSFET 650V NCH SIC TRENCH

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 5.7V @ 11mA
  • Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2131 pF @ 400 V
  • Vgs (Max): +23V, -5V
  • FET Feature: -
  • Power Dissipation (Max): 189W (Tc)
  • Rds On (Max) @ Id, Vgs: 34mOhm @ 38.3A, 18V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO247-4-3
  • Package / Case: TO-247-4
package: -
Voorraad1.380
SiCFET (Silicon Carbide)
650 V
59A (Tc)
18V
5.7V @ 11mA
63 nC @ 18 V
2131 pF @ 400 V
+23V, -5V
-
189W (Tc)
34mOhm @ 38.3A, 18V
-55°C ~ 150°C (TJ)
Through Hole
PG-TO247-4-3
TO-247-4
BSZ123N08NS3GATMA1
Infineon Technologies

MOSFET N-CH 80V 10A/40A 8TSDSON

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 33µA
  • Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 40 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.1W (Ta), 66W (Tc)
  • Rds On (Max) @ Id, Vgs: 12.3mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TSDSON-8
  • Package / Case: 8-PowerVDFN
package: -
Voorraad157.749
MOSFET (Metal Oxide)
80 V
10A (Ta), 40A (Tc)
6V, 10V
3.5V @ 33µA
25 nC @ 10 V
1700 pF @ 40 V
±20V
-
2.1W (Ta), 66W (Tc)
12.3mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TSDSON-8
8-PowerVDFN
IPS60R280PFD7SAKMA1
Infineon Technologies

CONSUMER PG-TO251-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 180µA
  • Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 656 pF @ 400 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 51W (Tc)
  • Rds On (Max) @ Id, Vgs: 280mOhm @ 3.6A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO251-3
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
package: -
Request a Quote
MOSFET (Metal Oxide)
600 V
12A (Tc)
10V
4.5V @ 180µA
15.3 nC @ 10 V
656 pF @ 400 V
±20V
-
51W (Tc)
280mOhm @ 3.6A, 10V
-40°C ~ 150°C (TJ)
Through Hole
PG-TO251-3
TO-251-3 Short Leads, IPak, TO-251AA
IPU95R750P7AKMA1
Infineon Technologies

MOSFET N-CH 950V 9A TO251-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 950 V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 220µA
  • Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 712 pF @ 400 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 73W (Tc)
  • Rds On (Max) @ Id, Vgs: 750mOhm @ 4.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO251-3
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
package: -
Request a Quote
MOSFET (Metal Oxide)
950 V
9A (Tc)
10V
3.5V @ 220µA
23 nC @ 10 V
712 pF @ 400 V
±20V
-
73W (Tc)
750mOhm @ 4.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PG-TO251-3
TO-251-3 Short Leads, IPak, TO-251AA
BSZ0901NSIATMA1
Infineon Technologies

MOSFET N-CH 30V 25A/40A TSDSON

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: Schottky Diode (Body)
  • Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.1mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TSDSON-8-FL
  • Package / Case: 8-PowerTDFN
package: -
Voorraad14.688
MOSFET (Metal Oxide)
30 V
25A (Ta), 40A (Tc)
4.5V, 10V
2.2V @ 250µA
41 nC @ 10 V
2600 pF @ 15 V
±20V
Schottky Diode (Body)
2.1W (Ta), 69W (Tc)
2.1mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TSDSON-8-FL
8-PowerTDFN
IPD95R450PFD7ATMA1
Infineon Technologies

MOSFET N-CH 950V 13.3A TO252-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 950 V
  • Current - Continuous Drain (Id) @ 25°C: 13.3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 360µA
  • Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 400 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 104W (Tc)
  • Rds On (Max) @ Id, Vgs: 450mOhm @ 7.2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
package: -
Voorraad7.404
MOSFET (Metal Oxide)
950 V
13.3A (Tc)
10V
3.5V @ 360µA
43 nC @ 10 V
1230 pF @ 400 V
±20V
-
104W (Tc)
450mOhm @ 7.2A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TO252-3
TO-252-3, DPAK (2 Leads + Tab), SC-63
IPD60R2K0PFD7SAUMA1
Infineon Technologies

MOSFET N-CH 600V 3A TO252-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 30µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 134 pF @ 400 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 20W (Tc)
  • Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3-344
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
package: -
Request a Quote
MOSFET (Metal Oxide)
600 V
3A (Tc)
10V
4.5V @ 30µA
3.8 nC @ 10 V
134 pF @ 400 V
±20V
-
20W (Tc)
2Ohm @ 500mA, 10V
-40°C ~ 150°C (TJ)
Surface Mount
PG-TO252-3-344
TO-252-3, DPAK (2 Leads + Tab), SC-63
BSO065N03MSG
Infineon Technologies

SMALL SIGNAL N-CHANNEL MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.56W (Ta)
  • Rds On (Max) @ Id, Vgs: 6.5mOhm @ 16A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-DSO-8
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
package: -
Request a Quote
MOSFET (Metal Oxide)
30 V
13A (Ta)
4.5V, 10V
2V @ 250µA
40 nC @ 10 V
3100 pF @ 15 V
±20V
-
1.56W (Ta)
6.5mOhm @ 16A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-DSO-8
8-SOIC (0.154", 3.90mm Width)
IAUC60N06S5L073ATMA1
Infineon Technologies

MOSFET_)40V 60V) PG-TDSON-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 19µA
  • Gate Charge (Qg) (Max) @ Vgs: 22.6 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1655 pF @ 30 V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 52W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.3mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TDSON-8-33
  • Package / Case: 8-PowerTDFN
package: -
Voorraad14.640
MOSFET (Metal Oxide)
60 V
60A (Tj)
4.5V, 10V
2.2V @ 19µA
22.6 nC @ 10 V
1655 pF @ 30 V
±16V
-
52W (Tc)
7.3mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TDSON-8-33
8-PowerTDFN
SPP15P10PLHXKSA1
Infineon Technologies

MOSFET P-CH 100V 15A TO220-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1.54mA
  • Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 128W (Tc)
  • Rds On (Max) @ Id, Vgs: 200mOhm @ 11.3A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3
  • Package / Case: TO-220-3
package: -
Request a Quote
MOSFET (Metal Oxide)
100 V
15A (Tc)
4.5V, 10V
2V @ 1.54mA
62 nC @ 10 V
1490 pF @ 25 V
±20V
-
128W (Tc)
200mOhm @ 11.3A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-3
TO-220-3
IMT65R057M1HXUMA1
Infineon Technologies

SILICON CARBIDE MOSFET

  • FET Type: -
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-HSOF-8-1
  • Package / Case: 8-PowerSFN
package: -
Voorraad6.000
SiCFET (Silicon Carbide)
650 V
-
18V
-
-
-
-
-
-
-
-
Surface Mount
PG-HSOF-8-1
8-PowerSFN
IPS60R360PFD7SAKMA1
Infineon Technologies

MOSFET N-CH 650V 10A TO251-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 140µA
  • Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 534 pF @ 400 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 43W (Tc)
  • Rds On (Max) @ Id, Vgs: 360mOhm @ 2.9A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO251-3
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
package: -
Voorraad2.496
MOSFET (Metal Oxide)
650 V
10A (Tc)
10V
4.5V @ 140µA
12.7 nC @ 10 V
534 pF @ 400 V
±20V
-
43W (Tc)
360mOhm @ 2.9A, 10V
-40°C ~ 150°C (TJ)
Through Hole
PG-TO251-3
TO-251-3 Short Leads, IPak, TO-251AA
BSC0580NSATMA1
Infineon Technologies

TRENCH <= 40V

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
AIMZA75R027M1HXKSA1
Infineon Technologies

IGBT

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IPA320N20NM3SXKSA1
Infineon Technologies

MOSFET N-CH 200V 26A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 89µA
  • Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 100 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 38W (Tc)
  • Rds On (Max) @ Id, Vgs: 32mOhm @ 26A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220 Full Pack
  • Package / Case: TO-220-3 Full Pack
package: -
Voorraad4.500
MOSFET (Metal Oxide)
200 V
26A (Tc)
10V
4V @ 89µA
30 nC @ 10 V
2300 pF @ 100 V
±20V
-
38W (Tc)
32mOhm @ 26A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220 Full Pack
TO-220-3 Full Pack
IAUCN04S7L009ATMA1
Infineon Technologies

MOSFET_(20V 40V)

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 275A (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1.8V @ 60µA
  • Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5704 pF @ 20 V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 129W (Tc)
  • Rds On (Max) @ Id, Vgs: 0.91mOhm @ 88A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TDSON-8-34
  • Package / Case: 8-PowerTDFN
package: -
Voorraad3.000
MOSFET (Metal Oxide)
40 V
275A (Tj)
4.5V, 10V
1.8V @ 60µA
85 nC @ 10 V
5704 pF @ 20 V
±16V
-
129W (Tc)
0.91mOhm @ 88A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TDSON-8-34
8-PowerTDFN
IRLMS6702TR
Infineon Technologies

MOSFET P-CH 20V 2.4A 6-TSOP

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 15 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 200mOhm @ 1.6A, 4.5V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: Micro6™(SOT23-6)
  • Package / Case: SOT-23-6
package: -
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MOSFET (Metal Oxide)
20 V
2.4A (Ta)
-
700mV @ 250µA (Min)
8.8 nC @ 4.5 V
210 pF @ 15 V
-
-
-
200mOhm @ 1.6A, 4.5V
-
Surface Mount
Micro6™(SOT23-6)
SOT-23-6
IPDD60R150G7XTMA1
Infineon Technologies

MOSFET N-CH 600V 16A HDSOP-10

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 260µA
  • Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 902 pF @ 400 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 95W (Tc)
  • Rds On (Max) @ Id, Vgs: 150mOhm @ 5.3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-HDSOP-10-1
  • Package / Case: 10-PowerSOP Module
package: -
Voorraad60
MOSFET (Metal Oxide)
600 V
16A (Tc)
10V
4V @ 260µA
23 nC @ 10 V
902 pF @ 400 V
±20V
-
95W (Tc)
150mOhm @ 5.3A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-HDSOP-10-1
10-PowerSOP Module
IPD06P005NSAUMA1
Infineon Technologies

MOSFET P-CH 60V 6.5A TO252-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 270µA
  • Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 28W (Tc)
  • Rds On (Max) @ Id, Vgs: 250mOhm @ 6.5A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3-313
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
package: -
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MOSFET (Metal Oxide)
60 V
6.5A (Tc)
10V
4V @ 270µA
10.6 nC @ 10 V
420 pF @ 30 V
±20V
-
28W (Tc)
250mOhm @ 6.5A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO252-3-313
TO-252-3, DPAK (2 Leads + Tab), SC-63
IPP018N10N5AKSA1
Infineon Technologies

TRENCH >=100V

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 205A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.8V @ 270µA
  • Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.83mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3
  • Package / Case: TO-220-3
package: -
Voorraad1.422
MOSFET (Metal Oxide)
100 V
33A (Ta), 205A (Tc)
6V, 10V
3.8V @ 270µA
210 nC @ 10 V
16000 pF @ 50 V
±20V
-
3.8W (Ta), 375W (Tc)
1.83mOhm @ 100A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-3
TO-220-3
IPF024N10NF2SATMA1
Infineon Technologies

TRENCH >=100V

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 227A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.8V @ 169µA
  • Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 250W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-7-14
  • Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
package: -
Voorraad2.358
MOSFET (Metal Oxide)
100 V
227A (Tc)
6V, 10V
3.8V @ 169µA
154 nC @ 10 V
7300 pF @ 50 V
±20V
-
250W (Tc)
2.4mOhm @ 100A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO263-7-14
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
IMZ120R045M1XKSA1
Infineon Technologies

SICFET N-CH 1200V 52A TO247-4

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V
  • Vgs(th) (Max) @ Id: 5.7V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 800 V
  • Vgs (Max): +20V, -10V
  • FET Feature: Current Sensing
  • Power Dissipation (Max): 228W (Tc)
  • Rds On (Max) @ Id, Vgs: 59mOhm @ 20A, 15V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO247-4-1
  • Package / Case: TO-247-4
package: -
Voorraad753
SiCFET (Silicon Carbide)
1200 V
52A (Tc)
15V
5.7V @ 10mA
52 nC @ 15 V
1900 pF @ 800 V
+20V, -10V
Current Sensing
228W (Tc)
59mOhm @ 20A, 15V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO247-4-1
TO-247-4
IMZA75R090M1HXKSA1
Infineon Technologies

SILICON CARBIDE MOSFET

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO247-4
  • Package / Case: TO-247-4
package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
Through Hole
PG-TO247-4
TO-247-4
IPAN60R125PFD7SXKSA1
Infineon Technologies

MOSFET N-CH 650V 25A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 390µA
  • Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1503 pF @ 400 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 32W (Tc)
  • Rds On (Max) @ Id, Vgs: 125mOhm @ 7.8A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-FP
  • Package / Case: TO-220-3 Full Pack
package: -
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MOSFET (Metal Oxide)
650 V
25A (Tc)
10V
4.5V @ 390µA
36 nC @ 10 V
1503 pF @ 400 V
±20V
-
32W (Tc)
125mOhm @ 7.8A, 10V
-40°C ~ 150°C (TJ)
Through Hole
PG-TO220-FP
TO-220-3 Full Pack
94-3316
Infineon Technologies

MOSFET N-CH 55V 2A SOT223

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55 V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 140mOhm @ 2A, 10V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223
  • Package / Case: TO-261-4, TO-261AA
package: -
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MOSFET (Metal Oxide)
55 V
2A (Ta)
-
2V @ 250µA
14 nC @ 10 V
230 pF @ 25 V
-
-
-
140mOhm @ 2A, 10V
-
Surface Mount
SOT-223
TO-261-4, TO-261AA