Pagina 33 - Infineon Technologies Producten - Transistors - FET's, MOSFET's - Single | Heisener Electronics
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Infineon Technologies Producten - Transistors - FET's, MOSFET's - Single

Archief 8.381
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Afbeelding
Onderdeelnummer
Fabrikant
Omschrijving
package
Voorraad
Aantal
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SPD30P06PGBTMA1
Infineon Technologies

MOSFET P-CH 60V 30A TO252-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1.7mA
  • Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1535 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 75mOhm @ 21.5A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
package: -
Voorraad48.906
MOSFET (Metal Oxide)
60 V
30A (Tc)
10V
4V @ 1.7mA
48 nC @ 10 V
1535 pF @ 25 V
±20V
-
125W (Tc)
75mOhm @ 21.5A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO252-3
TO-252-3, DPAK (2 Leads + Tab), SC-63
IPB037N06N3GATMA1
Infineon Technologies

MOSFET N-CH 60V 90A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 90µA
  • Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 188W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.7mOhm @ 90A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
package: -
Voorraad12.000
MOSFET (Metal Oxide)
60 V
90A (Tc)
10V
4V @ 90µA
98 nC @ 10 V
11000 pF @ 30 V
±20V
-
188W (Tc)
3.7mOhm @ 90A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO263-3
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IPF031N13NM6ATMA1
Infineon Technologies

TRENCH >=100V

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
94-2436PBF
Infineon Technologies

MOSFET N-CH 55V 30A DPAK

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IPP60R210CFD7XKSA1
Infineon Technologies

MOSFET N CH

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 240µA
  • Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 400 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 64W (Tc)
  • Rds On (Max) @ Id, Vgs: 210mOhm @ 4.9A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3
  • Package / Case: TO-220-3
package: -
Voorraad1.425
MOSFET (Metal Oxide)
600 V
12A (Tc)
10V
4.5V @ 240µA
23 nC @ 10 V
1015 pF @ 400 V
±20V
-
64W (Tc)
210mOhm @ 4.9A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PG-TO220-3
TO-220-3
IPT010N08NM5ATMA1
Infineon Technologies

TRENCH 40<-<100V PG-HSOF-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 425A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.8V @ 280µA
  • Gate Charge (Qg) (Max) @ Vgs: 223 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 40 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.05mOhm @ 150A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-HSOF-8
  • Package / Case: 8-PowerSFN
package: -
Request a Quote
MOSFET (Metal Oxide)
80 V
43A (Ta), 425A (Tc)
6V, 10V
3.8V @ 280µA
223 nC @ 10 V
16000 pF @ 40 V
±20V
-
3.8W (Ta), 375W (Tc)
1.05mOhm @ 150A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-HSOF-8
8-PowerSFN
ISP25DP06LMSATMA1
Infineon Technologies

MOSFET P-CH 60V 1.9A SOT223

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 270µA
  • Gate Charge (Qg) (Max) @ Vgs: 13.9 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.8W (Ta), 5W (Tc)
  • Rds On (Max) @ Id, Vgs: 250mOhm @ 1.9A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-SOT223
  • Package / Case: TO-261-4, TO-261AA
package: -
Request a Quote
MOSFET (Metal Oxide)
60 V
1.9A (Ta)
4.5V, 10V
2V @ 270µA
13.9 nC @ 10 V
420 pF @ 30 V
±20V
-
1.8W (Ta), 5W (Tc)
250mOhm @ 1.9A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-SOT223
TO-261-4, TO-261AA
IPC60R360P7X7SA1
Infineon Technologies

MOSFET N-CH DIE

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IPW65R110CFD7XKSA1
Infineon Technologies

HIGH POWER_NEW

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 480µA
  • Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1942 pF @ 400 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 114W (Tc)
  • Rds On (Max) @ Id, Vgs: 110mOhm @ 9.7A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO247-3
  • Package / Case: TO-247-3
package: -
Request a Quote
MOSFET (Metal Oxide)
650 V
22A (Tc)
10V
4.5V @ 480µA
41 nC @ 10 V
1942 pF @ 400 V
±20V
-
114W (Tc)
110mOhm @ 9.7A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PG-TO247-3
TO-247-3
IPB60R190C6ATMA1
Infineon Technologies

MOSFET N-CH 600V 20.2A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 630µA
  • Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 100 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 151W (Tc)
  • Rds On (Max) @ Id, Vgs: 190mOhm @ 9.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
package: -
Voorraad2.280
MOSFET (Metal Oxide)
600 V
20.2A (Tc)
10V
3.5V @ 630µA
63 nC @ 10 V
1400 pF @ 100 V
±20V
-
151W (Tc)
190mOhm @ 9.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TO263-3
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
BSZ100N06LS3GATMA1
Infineon Technologies

MOSFET N-CH 60V 11A/20A 8TSDSON

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 23µA
  • Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.1W (Ta), 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TSDSON-8
  • Package / Case: 8-PowerVDFN
package: -
Voorraad298.299
MOSFET (Metal Oxide)
60 V
11A (Ta), 20A (Tc)
4.5V, 10V
2.2V @ 23µA
45 nC @ 10 V
3500 pF @ 30 V
±20V
-
2.1W (Ta), 50W (Tc)
10mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TSDSON-8
8-PowerVDFN
IRFC9034NB
Infineon Technologies

MOSFET 55V 19A DIE

  • FET Type: -
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55 V
  • Current - Continuous Drain (Id) @ 25°C: 19A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 100mOhm @ 19A, 10V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: Die
  • Package / Case: Die
package: -
Request a Quote
MOSFET (Metal Oxide)
55 V
19A
10V
-
-
-
-
-
-
100mOhm @ 19A, 10V
-
Surface Mount
Die
Die
BSC088N15LS5ATMA1
Infineon Technologies

TRENCH >=100V

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150 V
  • Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 87A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 107µA
  • Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 75 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 139W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.8mOhm @ 46A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TDSON-8
  • Package / Case: 8-PowerTDFN
package: -
Voorraad12.000
MOSFET (Metal Oxide)
150 V
11.7A (Ta), 87A (Tc)
4.5V, 10V
2.3V @ 107µA
26 nC @ 4.5 V
3500 pF @ 75 V
±20V
-
2.5W (Ta), 139W (Tc)
8.8mOhm @ 46A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TDSON-8
8-PowerTDFN
IQE018N06NM6CGSCATMA1
Infineon Technologies

TRENCH 40<-<100V

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IPB100N12S305ATMA2
Infineon Technologies

MOSFET_(120V 300V)

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 120 V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 240µA
  • Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 11570 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.1mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3-2
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
package: -
Request a Quote
MOSFET (Metal Oxide)
120 V
100A (Tc)
10V
4V @ 240µA
185 nC @ 10 V
11570 pF @ 25 V
±20V
-
300W (Tc)
5.1mOhm @ 100A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO263-3-2
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
BSC080P03LSGAUMA1
Infineon Technologies

MOSFET P-CH 30V 16A/30A TDSON-8

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 122.4 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6140 pF @ 15 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 89W (Tc)
  • Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TDSON-8-3
  • Package / Case: 8-PowerVDFN
package: -
Voorraad42.108
MOSFET (Metal Oxide)
30 V
16A (Ta), 30A (Tc)
10V
2.2V @ 250µA
122.4 nC @ 10 V
6140 pF @ 15 V
±25V
-
2.5W (Ta), 89W (Tc)
8mOhm @ 30A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TDSON-8-3
8-PowerVDFN
SPP02N60S5
Infineon Technologies

N-CHANNEL POWER MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 80µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 25W (Tc)
  • Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3-1
  • Package / Case: TO-220-3
package: -
Request a Quote
MOSFET (Metal Oxide)
600 V
1.8A (Tc)
10V
5.5V @ 80µA
9.5 nC @ 10 V
240 pF @ 25 V
±20V
-
25W (Tc)
3Ohm @ 1.1A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PG-TO220-3-1
TO-220-3
IAUS300N10S5N015TATMA1
Infineon Technologies

MOSFET N-CH 100V 300A HDSOP-16-2

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 300A (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.8V @ 275µA
  • Gate Charge (Qg) (Max) @ Vgs: 216 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 16011 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 375W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-HDSOP-16-2
  • Package / Case: 16-PowerSOP Module
package: -
Voorraad5.730
MOSFET (Metal Oxide)
100 V
300A (Tj)
6V, 10V
3.8V @ 275µA
216 nC @ 10 V
16011 pF @ 50 V
±20V
-
375W (Tc)
1.5mOhm @ 100A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-HDSOP-16-2
16-PowerSOP Module
BSF083N03LQG
Infineon Technologies

N-CHANNEL POWER MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 53A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.2W (Ta), 36W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.3mOhm @ 20A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: MG-WDSON-2, CanPAK M™
  • Package / Case: 3-WDSON
package: -
Request a Quote
MOSFET (Metal Oxide)
30 V
13A (Ta), 53A (Tc)
4.5V, 10V
2.2V @ 250µA
18 nC @ 10 V
1800 pF @ 15 V
±20V
-
2.2W (Ta), 36W (Tc)
8.3mOhm @ 20A, 10V
-40°C ~ 150°C (TJ)
Surface Mount
MG-WDSON-2, CanPAK M™
3-WDSON
IMDQ75R008M1HXUMA1
Infineon Technologies

SILICON CARBIDE MOSFET

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
AIMZA75R020M1HXKSA1
Infineon Technologies

AUTOMOTIVE_SICMOS

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IPD11DP10NMATMA1
Infineon Technologies

TRENCH >=100V PG-TO252-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 22A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1.7mA
  • Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta), 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 111mOhm @ 18A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
package: -
Voorraad7.776
MOSFET (Metal Oxide)
100 V
3.4A (Ta), 22A (Tc)
10V
4V @ 1.7mA
74 nC @ 10 V
3200 pF @ 50 V
±20V
-
3W (Ta), 125W (Tc)
111mOhm @ 18A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO252-3
TO-252-3, DPAK (2 Leads + Tab), SC-63
AUIRFR8403TRLARMA1
Infineon Technologies

MOSFET_(20V 40V)

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3171 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 99W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.1mOhm @ 76A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3-901|DPAK
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
package: -
Request a Quote
MOSFET (Metal Oxide)
40 V
100A (Tc)
10V
3.9V @ 100µA
99 nC @ 10 V
3171 pF @ 25 V
±20V
-
99W (Tc)
3.1mOhm @ 76A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO252-3-901|DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
IPI200N25N3GAKSA1
Infineon Technologies

MOSFET N-CH 250V 64A TO262-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250 V
  • Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 270µA
  • Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 7100 pF @ 100 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 20mOhm @ 64A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO262-3
  • Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
package: -
Request a Quote
MOSFET (Metal Oxide)
250 V
64A (Tc)
10V
4V @ 270µA
86 nC @ 10 V
7100 pF @ 100 V
±20V
-
300W (Tc)
20mOhm @ 64A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO262-3
TO-262-3 Long Leads, I2PAK, TO-262AA
2N7002L6327HTSA1
Infineon Technologies

MOSFET N-CH 60V 300MA SOT23-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-SOT23-PO
  • Package / Case: TO-236-3, SC-59, SOT-23-3
package: -
Request a Quote
MOSFET (Metal Oxide)
60 V
300mA (Ta)
4.5V, 10V
2.5V @ 250µA
0.6 nC @ 10 V
20 pF @ 25 V
±20V
-
500mW (Ta)
3Ohm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-SOT23-PO
TO-236-3, SC-59, SOT-23-3
IMBG120R017M2HXTMA1
Infineon Technologies

SIC DISCRETE

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
package: -
Voorraad2.991
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
BUZ111S
Infineon Technologies

N-CHANNEL POWER MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55 V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 240µA
  • Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 8mOhm @ 80A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3-1
  • Package / Case: TO-220-3
package: -
Request a Quote
MOSFET (Metal Oxide)
55 V
80A (Tc)
10V
4V @ 240µA
185 nC @ 10 V
4500 pF @ 25 V
±20V
-
300W (Tc)
8mOhm @ 80A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-3-1
TO-220-3
IPT60R035CFD7XTMA1
Infineon Technologies

MOSFET N-CH 600V 67A 8HSOF

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1.25mA
  • Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4354 pF @ 400 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 351W (Tc)
  • Rds On (Max) @ Id, Vgs: 35mOhm @ 24.9A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-HSOF-8-1
  • Package / Case: 8-PowerSFN
package: -
Request a Quote
MOSFET (Metal Oxide)
600 V
67A (Tc)
10V
4.5V @ 1.25mA
109 nC @ 10 V
4354 pF @ 400 V
±20V
-
351W (Tc)
35mOhm @ 24.9A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-HSOF-8-1
8-PowerSFN