Taiwan Semiconductor Corporation Producten

2M180ZHR0G

Taiwan Semiconductor Corporation

DIODE, ZENER, 180V, 2000MW, %, A

• Voltage - Zener (Nom) (Vz): 180V
• Tolerance: ±5%
• Power - Max: 2W
• Impedance (Max) (Zzt): 725 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 136.8V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AC, DO-15, Axial
• Supplier Device Package: DO-204AC (DO-15)

package: DO-204AC, DO-15, Axial

BZD17C13P RUG

Taiwan Semiconductor Corporation

DIODE, ZENER, 13V, 800MW, %, SUB

• Voltage - Zener (Nom) (Vz): 13V
• Tolerance: ±6.53%
• Power - Max: 800mW
• Impedance (Max) (Zzt): 10 Ohms
• Current - Reverse Leakage @ Vr: 2µA @ 10V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: Sub SMA

package: DO-219AB

BZD17C200P MQG

Taiwan Semiconductor Corporation

DIODE, ZENER, 200V, 800MW, %, SU

• Voltage - Zener (Nom) (Vz): 200V
• Tolerance: ±6%
• Power - Max: 800mW
• Impedance (Max) (Zzt): 750 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 150V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: Sub SMA

package: DO-219AB

1N4755A R0G

Taiwan Semiconductor Corporation

DIODE, ZENER, 43V, 1000MW, 5%, D

• Voltage - Zener (Nom) (Vz): 43V
• Tolerance: ±5%
• Power - Max: 1W
• Impedance (Max) (Zzt): 70 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 32.7V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

package: DO-204AL, DO-41, Axial

TSZU52C3V3 RGG

Taiwan Semiconductor Corporation

DIODE, ZENER, 3.3V, 150MW, 5%, 0

• Voltage - Zener (Nom) (Vz): 3.3V
• Tolerance: ±5%
• Power - Max: 150mW
• Impedance (Max) (Zzt): 95 Ohms
• Current - Reverse Leakage @ Vr: 25µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: -55°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 0201 (0603 Metric)
• Supplier Device Package: 0603

package: 0201 (0603 Metric)

TSZU52C20 RGG

Taiwan Semiconductor Corporation

DIODE, ZENER, 20V, 150MW, 5%, 06

• Voltage - Zener (Nom) (Vz): 20V
• Tolerance: ±5%
• Power - Max: 150mW
• Impedance (Max) (Zzt): 50 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 15V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: -55°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 0201 (0603 Metric)
• Supplier Device Package: 0603

package: 0201 (0603 Metric)

BZX85C6V2 A0G

Taiwan Semiconductor Corporation

DIODE, ZENER, 6.2V, 1300MW, 5%,

• Voltage - Zener (Nom) (Vz): 6.2V
• Tolerance: ±5%
• Power - Max: 1.3W
• Impedance (Max) (Zzt): 4 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 3V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 10mA
• Operating Temperature: -65°C ~ 200°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

package: DO-204AL, DO-41, Axial

BZT52B43 RHG

Taiwan Semiconductor Corporation

DIODE, ZENER, 43V, 500MW, 2%, SO

• Voltage - Zener (Nom) (Vz): 43V
• Tolerance: ±2%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 150 Ohms
• Current - Reverse Leakage @ Vr: 45nA @ 30.1V
• Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-123F
• Supplier Device Package: SOD-123F

package: SOD-123F

BZT52B43-G RHG

Taiwan Semiconductor Corporation

DIODE, ZENER, 43V, 410MW, 2%, SO

• Voltage - Zener (Nom) (Vz): 43V
• Tolerance: ±2%
• Power - Max: 410mW
• Impedance (Max) (Zzt): 130 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 29.4V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: SOD-123

package: SOD-123

BZX585B7V5 RSG

Taiwan Semiconductor Corporation

DIODE, ZENER, 7.5V, 200MW, 2%, S

• Voltage - Zener (Nom) (Vz): 7.5V
• Tolerance: ±2%
• Power - Max: 200mW
• Impedance (Max) (Zzt): 15 Ohms
• Current - Reverse Leakage @ Vr: 900nA @ 5V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-79, SOD-523
• Supplier Device Package: SOD-523F

package: SC-79, SOD-523

BZX85C12 R0G

Taiwan Semiconductor Corporation

DIODE, ZENER, 12V, 1300MW, 5%, D

• Voltage - Zener (Nom) (Vz): 12V
• Tolerance: ±5%
• Power - Max: 1.3W
• Impedance (Max) (Zzt): 9 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 9.1V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 10mA
• Operating Temperature: -65°C ~ 200°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

package: DO-204AL, DO-41, Axial

BZX79B3V0 A0G

Taiwan Semiconductor Corporation

DIODE, ZENER, 3V, 500MW, 2%, DO-

• Voltage - Zener (Nom) (Vz): 3V
• Tolerance: ±2%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 95 Ohms
• Current - Reverse Leakage @ Vr: 1mA @ 50V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 100mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35

package: DO-204AH, DO-35, Axial

1SMA4750 R3G

Taiwan Semiconductor Corporation

DIODE, ZENER, 27V, 1000MW, %, DO

• Voltage - Zener (Nom) (Vz): 27V
• Tolerance: ±5%
• Power - Max: 1.25W
• Impedance (Max) (Zzt): 35 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 20.6V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)

package: DO-214AC, SMA

GBL01HD2G

Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 4A,

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 100V
• Current - Average Rectified (Io): 4A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A
• Current - Reverse Leakage @ Vr: 5µA @ 100V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, GBL
• Supplier Device Package: GBL

package: 4-SIP, GBL

SF2005PTH

Taiwan Semiconductor Corporation

DIODE GEN PURP 300V 20A TO247AD

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 300 V
• Current - Average Rectified (Io): 20A
• Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35 ns
• Current - Reverse Leakage @ Vr: 10 µA @ 300 V
• Capacitance @ Vr, F: 175pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD (TO-3P)
• Operating Temperature - Junction: -55°C ~ 150°C

package: -

TSF30L100C

Taiwan Semiconductor Corporation

DIODE ARR SCHOTT 100V ITO220AB

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100 V
• Current - Average Rectified (Io) (per Diode): 15A
• Voltage - Forward (Vf) (Max) @ If: 800 mV @ 15 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 250 µA @ 100 V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack, Isolated Tab
• Supplier Device Package: ITO-220AB

package: -

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T15JA07G-K

Taiwan Semiconductor Corporation

15A, 1000V, STANDARD BRIDGE RECT

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1 kV
• Current - Average Rectified (Io): 15 A
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A
• Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, TS-6P
• Supplier Device Package: TS-6P

package: -

KBPF304G

Taiwan Semiconductor Corporation

3A, 400V, STANDARD BRIDGE RECTIF

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 400 V
• Current - Average Rectified (Io): 3 A
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
• Current - Reverse Leakage @ Vr: 5 µA @ 400 V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, KBPF
• Supplier Device Package: KBPF

package: -

RS2GA

Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 1.5A DO214AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400 V
• Current - Average Rectified (Io): 1.5A
• Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 150 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 400 V
• Capacitance @ Vr, F: 50pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)
• Operating Temperature - Junction: -55°C ~ 150°C

package: -

UGF12JH

Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 12A ITO220AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 12A
• Voltage - Forward (Vf) (Max) @ If: 2 V @ 12 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 20 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 600 V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-220-2 Full Pack
• Supplier Device Package: ITO-220AC
• Operating Temperature - Junction: -55°C ~ 150°C

package: -

MBR30L60CTH

Taiwan Semiconductor Corporation

DIODE ARR SCHOTT 60V 30A TO220AB

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 60 V
• Current - Average Rectified (Io) (per Diode): 30A
• Voltage - Forward (Vf) (Max) @ If: 600 mV @ 15 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 480 µA @ 60 V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

package: -

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ES2GAF-T

Taiwan Semiconductor Corporation

35NS, 2A, 400V, SUPER FAST RECOV

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400 V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 2 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 400 V
• Capacitance @ Vr, F: 21pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-221AC, SMA Flat Leads
• Supplier Device Package: SMAF
• Operating Temperature - Junction: -55°C ~ 150°C

package: -

ESGLW

Taiwan Semiconductor Corporation

DIODE GP 400V 800MA SOD123W

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400 V
• Current - Average Rectified (Io): 800mA
• Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35 ns
• Current - Reverse Leakage @ Vr: 1 µA @ 400 V
• Capacitance @ Vr, F: 20pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-123W
• Supplier Device Package: SOD-123W
• Operating Temperature - Junction: -55°C ~ 150°C

package: -

TSD2JALH

Taiwan Semiconductor Corporation

2A, 600V, STANDARD RECOVERY RECT

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1 µA @ 600 V
• Capacitance @ Vr, F: 15pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-221AC, SMA Flat Leads
• Supplier Device Package: Thin SMA
• Operating Temperature - Junction: -40°C ~ 175°C

package: -

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TSZU52C33

Taiwan Semiconductor Corporation

603, 150MW, 5%, SMALL SIGNAL ZEN

• Voltage - Zener (Nom) (Vz): 33 V
• Tolerance: ±5%
• Power - Max: 150 mW
• Impedance (Max) (Zzt): 80 Ohms
• Current - Reverse Leakage @ Vr: 100 nA @ 25 V
• Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
• Operating Temperature: -55°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 0603 (1608 Metric)
• Supplier Device Package: 0603

package: -

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SFAF804GH

Taiwan Semiconductor Corporation

35NS, 8A, 200V, SUPER FAST RECOV

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200 V
• Current - Average Rectified (Io): 8A
• Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35 ns
• Current - Reverse Leakage @ Vr: 10 µA @ 200 V
• Capacitance @ Vr, F: 90pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2 Full Pack
• Supplier Device Package: ITO-220AC
• Operating Temperature - Junction: -55°C ~ 150°C

package: -

RS1MFSHMWG

Taiwan Semiconductor Corporation

DIODE GEN PURP 1KV 1A SOD128

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1000 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 500 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
• Capacitance @ Vr, F: 7pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-128
• Supplier Device Package: SOD-128
• Operating Temperature - Junction: -55°C ~ 150°C

package: -

SRA1060

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 60V 10A TO220AC

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 60 V
• Current - Average Rectified (Io): 10A
• Voltage - Forward (Vf) (Max) @ If: 700 mV @ 10 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500 µA @ 60 V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220AC
• Operating Temperature - Junction: -55°C ~ 150°C

package: -

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