Pagina 65 - Taiwan Semiconductor Corporation Producten | Heisener Electronics
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Taiwan Semiconductor Corporation Producten

Archief 4.299
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Voorraad
Aantal
2M16Z A0G
Taiwan Semiconductor Corporation

DIODE, ZENER, 16V, 2000MW, %, DO

  • Voltage - Zener (Nom) (Vz): 16V
  • Tolerance: ±5%
  • Power - Max: 2W
  • Impedance (Max) (Zzt): 8 Ohms
  • Current - Reverse Leakage @ Vr: 500nA @ 12.2V
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: DO-204AC, DO-15, Axial
  • Supplier Device Package: DO-204AC (DO-15)
package: DO-204AC, DO-15, Axial
Voorraad7.232
BZD27C62PHM2G
Taiwan Semiconductor Corporation

DIODE, ZENER, 62V, 1000MW, %, AE

  • Voltage - Zener (Nom) (Vz): 62V
  • Tolerance: ±6.45%
  • Power - Max: 1W
  • Impedance (Max) (Zzt): 80 Ohms
  • Current - Reverse Leakage @ Vr: 1µA @ 47V
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
package: DO-219AB
Voorraad4.032
BZD17C62P R3G
Taiwan Semiconductor Corporation

DIODE, ZENER, 62V, 800MW, %, SUB

  • Voltage - Zener (Nom) (Vz): 62V
  • Tolerance: ±6.45%
  • Power - Max: 800mW
  • Impedance (Max) (Zzt): 80 Ohms
  • Current - Reverse Leakage @ Vr: 1µA @ 47V
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
package: DO-219AB
Voorraad3.840
1SMA5955HR3G
Taiwan Semiconductor Corporation

DIODE, ZENER, 180V, 1500MW, 5%,

  • Voltage - Zener (Nom) (Vz): 180V
  • Tolerance: ±5%
  • Power - Max: 1.5W
  • Impedance (Max) (Zzt): 900 Ohms
  • Current - Reverse Leakage @ Vr: 500nA @ 136.8V
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
package: DO-214AC, SMA
Voorraad7.984
BZD17C39P RHG
Taiwan Semiconductor Corporation

DIODE, ZENER, 39V, 800MW, %, SUB

  • Voltage - Zener (Nom) (Vz): 39V
  • Tolerance: ±5.12%
  • Power - Max: 800mW
  • Impedance (Max) (Zzt): 40 Ohms
  • Current - Reverse Leakage @ Vr: 1µA @ 30V
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
package: DO-219AB
Voorraad4.528
MTZJ33SB R0G
Taiwan Semiconductor Corporation

DIODE, ZENER, 31.1V, 500MW, %, D

  • Voltage - Zener (Nom) (Vz): 31.1V
  • Tolerance: ±2%
  • Power - Max: 500mW
  • Impedance (Max) (Zzt): 65 Ohms
  • Current - Reverse Leakage @ Vr: 200nA @ 25V
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: DO-204AG, DO-34, Axial
  • Supplier Device Package: DO-34
package: DO-204AG, DO-34, Axial
Voorraad2.832
1N5259B A0G
Taiwan Semiconductor Corporation

DIODE, ZENER, 39V, 500MW, 5%, DO

  • Voltage - Zener (Nom) (Vz): 39V
  • Tolerance: ±5%
  • Power - Max: 500mW
  • Impedance (Max) (Zzt): 80 Ohms
  • Current - Reverse Leakage @ Vr: 100nA @ 30V
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
  • Operating Temperature: 100°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: DO-204AH, DO-35, Axial
  • Supplier Device Package: DO-35
package: DO-204AH, DO-35, Axial
Voorraad3.424
BZV55B11 L0G
Taiwan Semiconductor Corporation

DIODE, ZENER, 11V, 500MW, 2%, MM

  • Voltage - Zener (Nom) (Vz): 11V
  • Tolerance: ±2%
  • Power - Max: 500mW
  • Impedance (Max) (Zzt): 20 Ohms
  • Current - Reverse Leakage @ Vr: 100nA @ 8.2V
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
  • Operating Temperature: -65°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AC, MINI-MELF, SOD-80
  • Supplier Device Package: Mini MELF
package: DO-213AC, MINI-MELF, SOD-80
Voorraad7.840
1SMA200Z R3G
Taiwan Semiconductor Corporation

DIODE, ZENER, 200V, 1000MW, %, D

  • Voltage - Zener (Nom) (Vz): 200V
  • Tolerance: ±5%
  • Power - Max: 1.25W
  • Impedance (Max) (Zzt): 1500 Ohms
  • Current - Reverse Leakage @ Vr: 1µA @ 152V
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
package: DO-214AC, SMA
Voorraad2.144
MBS10HRCG
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 0.8A

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 400mA
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-BESOP (0.173", 4.40mm Width)
  • Supplier Device Package: MBS
package: 4-BESOP (0.173", 4.40mm Width)
Voorraad3.584
KBP152G-C2G
Taiwan Semiconductor Corporation

BRIDGE RECT 1PHASE 100V 1.5A KBP

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100 V
  • Current - Average Rectified (Io): 1.5 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 100 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBP
  • Supplier Device Package: KBP
package: -
Request a Quote
BZT52C39-G
Taiwan Semiconductor Corporation

SOD-123, 350MW, 5%, SMALL SIGNAL

  • Voltage - Zener (Nom) (Vz): 39 V
  • Tolerance: ±5%
  • Power - Max: 350 mW
  • Impedance (Max) (Zzt): 130 Ohms
  • Current - Reverse Leakage @ Vr: 100 nA @ 27.3 V
  • Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123
  • Supplier Device Package: SOD-123
package: -
Request a Quote
S2GA
Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 1.5A DO214AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.5 µs
  • Current - Reverse Leakage @ Vr: 5 µA @ 400 V
  • Capacitance @ Vr, F: 30pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
package: -
Voorraad45.000
FR305GH
Taiwan Semiconductor Corporation

250NS, 3A, 600V, FAST RECOVERY R

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 250 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Capacitance @ Vr, F: 30pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -55°C ~ 150°C
package: -
Voorraad11.250
S12JC-V7G
Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 12A DO214AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 12A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1 µA @ 600 V
  • Capacitance @ Vr, F: 78pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB (SMC)
  • Operating Temperature - Junction: -55°C ~ 150°C
package: -
Request a Quote
BZT52C6V8-G
Taiwan Semiconductor Corporation

SOD-123, 350MW, 5%, SMALL SIGNAL

  • Voltage - Zener (Nom) (Vz): 6.8 V
  • Tolerance: ±5%
  • Power - Max: 350 mW
  • Impedance (Max) (Zzt): 15 Ohms
  • Current - Reverse Leakage @ Vr: 2 µA @ 4 V
  • Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123
  • Supplier Device Package: SOD-123
package: -
Request a Quote
BZD27C43PH
Taiwan Semiconductor Corporation

SUB SMA, 1000MW, 6%, ZENER DIODE

  • Voltage - Zener (Nom) (Vz): 43 V
  • Tolerance: ±6.98%
  • Power - Max: 1 W
  • Impedance (Max) (Zzt): 45 Ohms
  • Current - Reverse Leakage @ Vr: 1 µA @ 33 V
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123
  • Supplier Device Package: Sub SMA
package: -
Request a Quote
ES3D-V7G
Taiwan Semiconductor Corporation

DIODE GEN PURP 200V 3A DO214AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 20 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 200 V
  • Capacitance @ Vr, F: 45pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB (SMC)
  • Operating Temperature - Junction: -55°C ~ 150°C
package: -
Request a Quote
1SMA5935H
Taiwan Semiconductor Corporation

DIODE ZENER 27V 1.5W DO214AC

  • Voltage - Zener (Nom) (Vz): 27 V
  • Tolerance: ±5%
  • Power - Max: 1.5 W
  • Impedance (Max) (Zzt): 23 Ohms
  • Current - Reverse Leakage @ Vr: 500 nA @ 20.6 V
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
package: -
Request a Quote
BZD27C10P
Taiwan Semiconductor Corporation

SUB SMA, 1000MW, 6%, ZENER DIODE

  • Voltage - Zener (Nom) (Vz): 10 V
  • Tolerance: ±6%
  • Power - Max: 1 W
  • Impedance (Max) (Zzt): 4 Ohms
  • Current - Reverse Leakage @ Vr: 7 µA @ 7.5 V
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123
  • Supplier Device Package: Sub SMA
package: -
Request a Quote
TSSD20L150SW
Taiwan Semiconductor Corporation

20A, 150V, TRENCH SCHOTTKY

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 150 V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 20 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 20 µA @ 150 V
  • Capacitance @ Vr, F: 920pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252 (DPAK)
  • Operating Temperature - Junction: -55°C ~ 150°C
package: -
Request a Quote
MBRS1060CTH
Taiwan Semiconductor Corporation

DIODE ARR SCHOTT 60V 10A TO263AB

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60 V
  • Current - Average Rectified (Io) (per Diode): 10A
  • Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 60 V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB (D2PAK)
package: -
Request a Quote
BZX584B47-RSG
Taiwan Semiconductor Corporation

SOD-523F, 150MW, 2%, SMALL SIGNA

  • Voltage - Zener (Nom) (Vz): 47 V
  • Tolerance: ±2%
  • Power - Max: 150 mW
  • Impedance (Max) (Zzt): 170 Ohms
  • Current - Reverse Leakage @ Vr: 100 nA @ 36 V
  • Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-79, SOD-523
  • Supplier Device Package: SOD-523F
package: -
Voorraad24.000
SF31GH
Taiwan Semiconductor Corporation

DIODE GEN PURP 50V 3A DO201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 50 V
  • Capacitance @ Vr, F: 80pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -55°C ~ 150°C
package: -
Request a Quote
S15MC-V7G
Taiwan Semiconductor Corporation

DIODE GEN PURP 1KV 15A DO214AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000 V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
  • Capacitance @ Vr, F: 93pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB (SMC)
  • Operating Temperature - Junction: -55°C ~ 150°C
package: -
Request a Quote
BZT52B62-G
Taiwan Semiconductor Corporation

SOD-123, 410MW, 2%, SMALL SIGNAL

  • Voltage - Zener (Nom) (Vz): 62 V
  • Tolerance: ±2%
  • Power - Max: 410 mW
  • Impedance (Max) (Zzt): 215 Ohms
  • Current - Reverse Leakage @ Vr: 45 nA @ 43.4 V
  • Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: SOD-123F
package: -
Request a Quote
BAS40-06
Taiwan Semiconductor Corporation

DIODE ARR SCHOTT 40V 200MA SOT23

  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io) (per Diode): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 5 ns
  • Current - Reverse Leakage @ Vr: 200 nA @ 30 V
  • Operating Temperature - Junction: -65°C ~ 125°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
package: -
Request a Quote
HER1604PT
Taiwan Semiconductor Corporation

50NS, 16A, 300V, HIGH EFFICIENT

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 300 V
  • Current - Average Rectified (Io) (per Diode): 16A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 300 V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (TO-3P)
package: -
Voorraad2.700