Afbeelding |
Onderdeelnummer |
Fabrikant |
Omschrijving |
package |
Voorraad |
Aantal |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 100V 100A TO262-3
|
package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Voorraad2.416 |
|
MOSFET (Metal Oxide) | 100V | 100A (Tc) | 6V, 10V | 3.5V @ 275µA | 206nC @ 10V | 14800pF @ 50V | ±20V | - | 300W (Tc) | 3 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Renesas Electronics America |
MOSFET N-CH 400V 3A TO220
|
package: TO-220-3 Full Pack |
Voorraad3.104 |
|
MOSFET (Metal Oxide) | 400V | 3A (Ta) | 10V | - | 6nC @ 100V | 165pF @ 25V | ±30V | - | 20W (Tc) | 2.9 Ohm @ 1.5A, 10V | 150°C (TJ) | Through Hole | TO-220FL | TO-220-3 Full Pack |
||
STMicroelectronics |
MOSFET N-CH 600V 7.2A TO-220
|
package: TO-220-3 |
Voorraad451.032 |
|
MOSFET (Metal Oxide) | 600V | 7.2A (Tc) | 10V | 5V @ 250µA | 45nC @ 10V | 1625pF @ 25V | ±30V | - | 125W (Tc) | 1.2 Ohm @ 3.6A, 10V | 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
IXYS |
MOSFET N-CH 500V 44A PLUS247
|
package: TO-247-3 |
Voorraad103.464 |
|
MOSFET (Metal Oxide) | 500V | 44A (Tc) | 10V | 4V @ 4mA | 190nC @ 10V | 7000pF @ 25V | ±20V | - | 500W (Tc) | 120 mOhm @ 22A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PLUS247?-3 | TO-247-3 |
||
IXYS |
MOSFET N-CH 600V 18A TO-247
|
package: TO-247-3 |
Voorraad6.304 |
|
MOSFET (Metal Oxide) | 600V | 18A (Tc) | 10V | 4.5V @ 1.5mA | 35nC @ 10V | 1440pF @ 25V | ±30V | - | 320W (Tc) | 230 mOhm @ 9A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 650V 15A TO263
|
package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Voorraad4.336 |
|
MOSFET (Metal Oxide) | 650V | 15A (Tc) | 10V | 4V @ 250µA | 17.2nC @ 10V | 841pF @ 100V | ±30V | - | 208W (Tc) | 290 mOhm @ 7.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 500V 12A TO262-3
|
package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Voorraad9.276 |
|
MOSFET (Metal Oxide) | 500V | 12A (Tc) | 10V | 3.5V @ 440µA | 31nC @ 10V | 1190pF @ 100V | ±20V | - | 104W (Tc) | 299 mOhm @ 6.6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Fairchild/ON Semiconductor |
MOSFET P-CH 12V 80A POWER33
|
package: 8-PowerTDFN |
Voorraad3.504 |
|
MOSFET (Metal Oxide) | 12V | 80A (Tc) | 2.5V, 4.5V | 1V @ 250µA | 99nC @ 4.5V | 1250pF @ 6V | ±8V | - | 2.4W (Ta), 48W (Tc) | 3.9 mOhm @ 22A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | Power33 | 8-PowerTDFN |
||
Vishay Siliconix |
MOSFET N-CH 200V 5.2A D2PAK
|
package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Voorraad145.668 |
|
MOSFET (Metal Oxide) | 200V | 5.2A (Tc) | 10V | 4V @ 250µA | 14nC @ 10V | 260pF @ 25V | ±20V | - | 3W (Ta), 50W (Tc) | 800 mOhm @ 3.1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
STMicroelectronics |
MOSFET N-CH 600V 11A EP TO220FP
|
package: TO-220-3 Full Pack |
Voorraad23.400 |
|
MOSFET (Metal Oxide) | 600V | 11A (Tc) | 10V | 4V @ 250µA | 17nC @ 10V | 590pF @ 100V | ±25V | - | 25W (Tc) | 378 mOhm @ 5.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
||
Infineon Technologies |
MOSFET N-CH 150V 33A D2PAK
|
package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Voorraad19.668 |
|
MOSFET (Metal Oxide) | 150V | 33A (Tc) | 10V | 5V @ 100µA | 40nC @ 10V | 1750pF @ 50V | ±20V | - | 144W (Tc) | 42 mOhm @ 21A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
STMicroelectronics |
MOSFET N-CH 650V 17A POWERFLAT88
|
package: 4-PowerFlat? HV |
Voorraad15.432 |
|
MOSFET (Metal Oxide) | 650V | 17A (Tc) | 10V | 5V @ 250µA | 50nC @ 10V | 1950pF @ 100V | ±25V | - | 3W (Ta), 125W (Tc) | 179 mOhm @ 8.5A, 10V | 150°C (TJ) | Surface Mount | PowerFlat? (8x8) HV | 4-PowerFlat? HV |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 30V 54A DFN5X6
|
package: 8-PowerSMD, Flat Leads |
Voorraad4.192 |
|
MOSFET (Metal Oxide) | 30V | 54A (Ta), 85A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 72nC @ 10V | 3509pF @ 15V | ±20V | Schottky Diode (Body) | 7.4W (Ta), 83W (Tc) | 1.7 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (5x6) | 8-PowerSMD, Flat Leads |
||
Diodes Incorporated |
MOSFET N-CH 100V 3.8A POWERDI
|
package: 8-PowerWDFN |
Voorraad24.000 |
|
MOSFET (Metal Oxide) | 100V | 3.8A (Ta) | 6V, 10V | 3V @ 250µA | 10.6nC @ 10V | 549pF @ 50V | ±20V | - | 1W (Ta) | 110 mOhm @ 3.3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerWDFN |
||
STMicroelectronics |
MOSFET N CH 500V 12A I2PAK
|
package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Voorraad20.784 |
|
MOSFET (Metal Oxide) | 500V | 12A (Tc) | 10V | 4V @ 100µA | 27nC @ 10V | 816pF @ 50V | ±25V | - | 90W (Tc) | 320 mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
STMicroelectronics |
MOSFET N-CH 150V 6A POWERFLAT
|
package: 8-PowerVDFN |
Voorraad22.032 |
|
MOSFET (Metal Oxide) | 150V | 25A (Tc) | 10V | 4V @ 250µA | 29nC @ 10V | 1300pF @ 25V | ±20V | - | 80W (Tc) | 57 mOhm @ 3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerFlat? (6x5) | 8-PowerVDFN |
||
Infineon Technologies |
MOSFET P-CH 30V 4.6A 8-SOIC
|
package: 8-SOIC (0.154", 3.90mm Width) |
Voorraad249.876 |
|
MOSFET (Metal Oxide) | 30V | 4.6A (Ta) | 4.5V, 10V | 3V @ 250µA | 40nC @ 10V | 870pF @ 10V | ±20V | - | 2.5W (Tc) | 70 mOhm @ 4.6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Toshiba Semiconductor and Storage |
MOSFET P CH 20V 3.4A ES6
|
package: SOT-563, SOT-666 |
Voorraad89.154 |
|
MOSFET (Metal Oxide) | 20V | 3.4A (Ta) | 1.5V, 4.5V | 1V @ 1mA | 10.4nC @ 4.5V | 630pF @ 10V | ±8V | - | 500mW (Ta) | 59 mOhm @ 3A, 4.5V | 150°C (TJ) | Surface Mount | ES6 | SOT-563, SOT-666 |
||
onsemi |
MV8 40V P-CH LL IN LFPAK
|
package: - |
Voorraad7.440 |
|
MOSFET (Metal Oxide) | 40 V | 9.4A (Ta), 32A (Tc) | 4.5V, 10V | 3V @ 255µA | 16 nC @ 10 V | 1080 pF @ 25 V | ±20V | - | 3.8W (Ta), 44.1W (Tc) | 25mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-LFPAK | SOT-1205, 8-LFPAK56 |
||
Infineon Technologies |
MOSFET N-CH 40V 282A
|
package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 282A (Tc) | 4.5V, 10V | 2V @ 250µA | 133 nC @ 10 V | 9500 pF @ 20 V | ±20V | - | 139W (Tc) | 1.05mOhm @ 50A, 10V | -55°C ~ 150°C (TJ) | - | - | - |
||
Fairchild Semiconductor |
28A, 40V, 0.0029OHM, N-CHANNEL,
|
package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 28A (Ta), 80A (Tc) | 10V | 4V @ 250µA | 235 nC @ 10 V | 12200 pF @ 25 V | ±20V | - | 254W (Tc) | 2.9mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2PAK) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
||
Vishay Siliconix |
MOSFET N-CH 800V 15A D2PAK
|
package: - |
Voorraad2.400 |
|
MOSFET (Metal Oxide) | 800 V | 15A (Tc) | 10V | 4V @ 250µA | 122 nC @ 10 V | 2408 pF @ 100 V | ±30V | - | 208W (Tc) | 290mOhm @ 8.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D2PAK) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
||
Goford Semiconductor |
P-20V,-16A,RD(MAX)<17M@-4.5V,VTH
|
package: - |
Voorraad8.910 |
|
MOSFET (Metal Oxide) | 20 V | 16A (Tc) | 2.5V, 4.5V | 1V @ 250µA | 30 nC @ 10 V | 2179 pF @ 10 V | ±8V | - | 18W (Tc) | 17mOhm @ 6A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 6-DFN (2x2) | 6-UDFN Exposed Pad |
||
onsemi |
MOSFET N-CH 650V 65A TO247-4
|
package: - |
Voorraad1.020 |
|
MOSFET (Metal Oxide) | 650 V | 65A (Tc) | 10V | 5V @ 2.1mA | 158 nC @ 10 V | 5940 pF @ 400 V | ±30V | - | 446W (Tc) | 40mOhm @ 32.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247-4L | TO-247-4 |
||
Renesas Electronics Corporation |
MOSFET N-CH 75V 90A TO220AB
|
package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 75 V | 90A (Ta) | - | - | 89 nC @ 10 V | 6450 pF @ 10 V | - | - | 150W (Tc) | 4.8mOhm @ 45A, 10V | 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Rohm Semiconductor |
MOSFET N-CH 650V 11A LPTS
|
package: - |
Voorraad270 |
|
MOSFET (Metal Oxide) | 650 V | 11A (Tc) | 10V | 4V @ 320µA | 32 nC @ 10 V | 670 pF @ 25 V | ±20V | - | 124W (Tc) | 400mOhm @ 3.8A, 10V | 150°C (TJ) | Surface Mount | LPTS | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
||
Vishay Siliconix |
MOSFET N-CH 600V 40A TO247AC
|
package: - |
Voorraad1.200 |
|
MOSFET (Metal Oxide) | 600 V | 40A (Tc) | 10V | 4V @ 250µA | 189 nC @ 10 V | 3576 pF @ 100 V | ±30V | - | 313W (Tc) | 70mOhm @ 23.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
||
onsemi |
MOSFET N-CH 150V 20A/185A D2PAK
|
package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 150 V | 20A (Ta), 185A (Tc) | 8V, 10V | 4.5V @ 574µA | 88.9 nC @ 10 V | 7285 pF @ 75 V | ±20V | - | 3.7W (Ta), 316W (Tc) | 4.1mOhm @ 104A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2PAK) | TO-263-7, D2PAK (6 Leads + Tab) |