Afbeelding |
Onderdeelnummer |
Fabrikant |
Omschrijving |
package |
Voorraad |
Aantal |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
ON Semiconductor |
MOSFET N-CH 100V 20A
|
package: TO-220-3 Full Pack |
Voorraad7.872 |
|
MOSFET (Metal Oxide) | 100V | 20A (Ta) | 4V, 10V | - | 44nC @ 10V | 2150pF @ 20V | ±20V | - | 2W (Ta), 25W (Tc) | 60 mOhm @ 10A, 10V | 150°C (TJ) | Through Hole | TO-220F-3SG | TO-220-3 Full Pack |
||
Fairchild/ON Semiconductor |
MOSFET P-CH 200V 7.3A TO-220F
|
package: TO-220-3 Full Pack |
Voorraad6.512 |
|
MOSFET (Metal Oxide) | 200V | 7.3A (Tc) | 10V | 5V @ 250µA | 40nC @ 10V | 1200pF @ 25V | ±30V | - | 50W (Tc) | 470 mOhm @ 3.65A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 600V 1A DPAK
|
package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Voorraad2.448 |
|
MOSFET (Metal Oxide) | 600V | 1A (Tc) | 10V | 4V @ 250µA | 6.2nC @ 10V | 170pF @ 25V | ±30V | - | 2.5W (Ta), 28W (Tc) | 11.5 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Vishay Siliconix |
MOSFET N-CH 250V 14A TO-220AB
|
package: TO-220-3 |
Voorraad7.776 |
|
MOSFET (Metal Oxide) | 250V | 14A (Tc) | 10V | 4V @ 250µA | 54nC @ 10V | 1060pF @ 25V | ±20V | - | 150W (Tc) | 240 mOhm @ 8.4A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
ON Semiconductor |
MOSFET N-CH 28V 60A IPAK
|
package: TO-251-3 Short Leads, IPak, TO-251AA |
Voorraad4.864 |
|
MOSFET (Metal Oxide) | 28V | 60A (Tc) | 4.5V, 10V | 3V @ 250µA | 30nC @ 4.5V | 2150pF @ 24V | ±20V | - | 75W (Tc) | 7.5 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Through Hole | I-Pak | TO-251-3 Short Leads, IPak, TO-251AA |
||
ON Semiconductor |
MOSFET P-CH 30V 2.5A 6-TSOP
|
package: SOT-23-6 |
Voorraad100.800 |
|
MOSFET (Metal Oxide) | 30V | 2.5A (Ta) | 4.5V, 10V | 3V @ 250µA | 13nC @ 10V | 480pF @ 5V | ±20V | - | 500mW (Ta) | 100 mOhm @ 3.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 |
||
Rohm Semiconductor |
MOSFET N-CH 200V 10A TO-220FN
|
package: TO-220-3 Full Pack |
Voorraad12.924 |
|
MOSFET (Metal Oxide) | 200V | 10A (Ta) | 10V | 4V @ 1mA | 30nC @ 10V | 543pF @ 10V | ±30V | - | 35W (Tc) | 360 mOhm @ 5A, 10V | 150°C (TJ) | Through Hole | TO-220FN | TO-220-3 Full Pack |
||
Toshiba Semiconductor and Storage |
MOSFET N CH 600V 7A TO-220SIS
|
package: TO-220-3 Full Pack, Isolated Tab |
Voorraad5.200 |
|
MOSFET (Metal Oxide) | 600V | 7A (Ta) | 10V | 3.7V @ 350µA | 15nC @ 10V | 490pF @ 300V | ±30V | Super Junction | 30W (Tc) | 600 mOhm @ 3.5A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack, Isolated Tab |
||
Nexperia USA Inc. |
MOSFET N-CH 80V 120A I2PAK
|
package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Voorraad7.440 |
|
MOSFET (Metal Oxide) | 80V | 120A (Tc) | 10V | 4V @ 1mA | 139nC @ 10V | 9800pF @ 30V | ±20V | - | 338W (Tc) | 3.5 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Vishay Siliconix |
MOSFET N-CH 60V 30A D2PAK
|
package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Voorraad2.384 |
|
MOSFET (Metal Oxide) | 60V | 30A (Tc) | 4V, 5V | 2V @ 250µA | 35nC @ 5V | 1600pF @ 25V | ±10V | - | 3.7W (Ta), 88W (Tc) | 50 mOhm @ 18A, 5V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
STMicroelectronics |
MOSFET N-CH 600V 5A DPAK
|
package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Voorraad914.652 |
|
MOSFET (Metal Oxide) | 600V | 5A (Tc) | 10V | 4.5V @ 50µA | 34nC @ 10V | 690pF @ 25V | ±30V | - | 90W (Tc) | 1.6 Ohm @ 2.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Transphorm |
GAN FET 650V 35A TO247
|
package: TO-247-3 |
Voorraad22.224 |
|
GaNFET (Gallium Nitride) | 650V | 35A (Tc) | - | 2.6V @ 700µA | 42nC @ 8V | 2200pF @ 400V | ±18V | - | 125W (Tc) | 62 mOhm @ 22A, 8V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
||
IXYS |
MOSFET N-CH 100V 178A SOT-227
|
package: SOT-227-4, miniBLOC |
Voorraad7.752 |
|
MOSFET (Metal Oxide) | 100V | 178A | 10V | 4.5V @ 3mA | 540nC @ 10V | 23000pF @ 25V | ±20V | - | 830W (Tc) | 11 mOhm @ 100A, 10V | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
||
STMicroelectronics |
MOSFET N-CH 1500V 8A TO-247
|
package: TO-247-3 |
Voorraad93.696 |
|
MOSFET (Metal Oxide) | 1500V | 8A (Tc) | 10V | 5V @ 250µA | 89.3nC @ 10V | 3255pF @ 25V | ±30V | - | 320W (Tc) | 2.5 Ohm @ 4A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
||
Taiwan Semiconductor Corporation |
-30V, -4.1A, SINGLE P-CHANNEL PO
|
package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 4.1A (Tc) | 2.5V, 10V | 900mV @ 250µA | 8 nC @ 4.5 V | 810 pF @ 15 V | ±12V | - | 1.56W (Tc) | 65mOhm @ 4A, 10V | 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
||
IXYS |
DISCRETE MOSFET 130A 650V X3 PLU
|
package: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Texas Instruments |
MOSFET N-CH 40V 194A TO220-3
|
package: - |
Voorraad2.661 |
|
MOSFET (Metal Oxide) | 40 V | 194A (Ta) | 4.5V, 10V | 2.4V @ 250µA | 64 nC @ 10 V | 5940 pF @ 20 V | ±20V | - | 188W (Ta) | 2.6mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
||
onsemi |
T8 80V LL SO8FL
|
package: - |
Voorraad4.215 |
|
MOSFET (Metal Oxide) | 80 V | 8.7A (Ta), 30A (Tc) | 4.5V, 10V | 2V @ 30µA | 6 nC @ 4.5 V | 623 pF @ 40 V | ±20V | - | 3.5W (Ta), 42W (Tc) | 19.5mOhm @ 5A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
||
Vishay Siliconix |
MOSFET N-CH 40V 20.7A 8SOIC
|
package: - |
Voorraad7.494 |
|
MOSFET (Metal Oxide) | 40 V | 20.7A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 62 nC @ 10 V | 2440 pF @ 20 V | ±20V | - | 7.1W (Tc) | 9mOhm @ 14A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
||
Diodes Incorporated |
MOSFET BVDSS: 8V~24V X2-DFN0606-
|
package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 20 V | 550mA (Ta) | 1.5V, 4.5V | 1V @ 250µA | 0.28 nC @ 4.5 V | 14.6 pF @ 16 V | ±8V | - | 450mW (Ta) | 990mOhm @ 100mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | X2-DFN0606-3 | 3-XFDFN |
||
Nexperia USA Inc. |
MOSFET N-CH 60V 300MA TO236AB
|
package: - |
Voorraad158.157 |
|
MOSFET (Metal Oxide) | 60 V | 300mA (Tc) | 4.5V, 10V | 2.5V @ 250µA | - | 50 pF @ 10 V | ±30V | - | 830mW (Tc) | 5Ohm @ 500mA, 10V | -65°C ~ 150°C (TJ) | Surface Mount | TO-236AB | TO-236-3, SC-59, SOT-23-3 |
||
Panjit International Inc. |
80V/ 3.4MOHM / MV MOSFET
|
package: - |
Voorraad2.310 |
|
MOSFET (Metal Oxide) | 80 V | 161A (Tc) | 7V, 10V | 3.75V @ 250µA | 76 nC @ 7 V | 7430 pF @ 40 V | ±20V | - | 156W (Tc) | 3.4mOhm @ 50A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
||
Diodes Incorporated |
MOSFET BVDSS: 31V~40V PowerDI333
|
package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 13.6A (Ta), 49A (Tc) | 4.5V, 10V | 2.3V @ 250µA | 12.3 nC @ 10 V | 881 pF @ 20 V | ±20V | - | 2.9W (Ta), 37.5W (Tc) | 8.9mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | PowerDI3333-8 (SWP) Type UX | 8-PowerVDFN |
||
Vishay Siliconix |
N-CHANNEL 40-V (D-S) 175C MOSFET
|
package: - |
Voorraad9.000 |
|
MOSFET (Metal Oxide) | 40 V | 60A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 65 nC @ 10 V | 2922 pF @ 20 V | ±20V | - | 55W (Tc) | 4.5mOhm @ 15.3A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
||
Renesas Electronics Corporation |
N-CHANNEL POWER MOSFET
|
package: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Vishay Siliconix |
MOSFET N-CH 30V 40.6A/60A PPAK
|
package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 40.6A (Ta), 60A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 135 nC @ 10 V | 4735 pF @ 15 V | ±20V | Schottky Diode (Body) | 6.25W (Ta), 104W (Tc) | 2.1mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
||
Infineon Technologies |
MOSFET N-CH 650V 24A TO263-3
|
package: - |
Voorraad10.197 |
|
MOSFET (Metal Oxide) | 650 V | 24A (Tc) | 10V | 4V @ 590µA | 45 nC @ 10 V | 2140 pF @ 400 V | ±20V | - | 128W (Tc) | 95mOhm @ 11.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 120V 100A TO220-3
|
package: - |
Voorraad4.095 |
|
MOSFET (Metal Oxide) | 120 V | 100A (Tc) | 10V | 4V @ 230µA | 182 nC @ 10 V | 12000 pF @ 60 V | ±20V | - | 300W (Tc) | 4.8mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |