Afbeelding |
Onderdeelnummer |
Fabrikant |
Omschrijving |
package |
Voorraad |
Aantal |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 60V 200MA SOT-23
|
package: TO-236-3, SC-59, SOT-23-3 |
Voorraad4.976 |
|
MOSFET (Metal Oxide) | 60V | 200mA (Ta) | 4.5V, 10V | 1.8V @ 26µA | 1.5nC @ 10V | 45pF @ 25V | ±20V | - | 360mW (Ta) | 5 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT23-3 | TO-236-3, SC-59, SOT-23-3 |
||
Infineon Technologies |
MOSFET N-CH 55V 77A TO-220
|
package: TO-220-3 |
Voorraad4.032 |
|
MOSFET (Metal Oxide) | 55V | 77A (Tc) | 10V | 4V @ 55µA | 103nC @ 10V | 5335pF @ 25V | ±20V | - | 107W (Tc) | 9.1 mOhm @ 39A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 55V 3.7A SOT223
|
package: TO-261-4, TO-261AA |
Voorraad10.140 |
|
MOSFET (Metal Oxide) | 55V | 3.7A (Ta) | 10V | 4V @ 250µA | 35nC @ 10V | 660pF @ 25V | ±20V | - | 1W (Ta) | 45 mOhm @ 3.7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
||
Infineon Technologies |
MOSFET N-CH 30V 35A DPAK
|
package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Voorraad3.072 |
|
MOSFET (Metal Oxide) | 30V | 35A (Tc) | 4.5V, 10V | 1V @ 250µA | 26nC @ 4.5V | 870pF @ 25V | ±16V | - | 68W (Tc) | 31 mOhm @ 21A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Global Power Technologies Group |
MOSFET N-CH 600V 12A TO220
|
package: TO-220-3 |
Voorraad3.744 |
|
MOSFET (Metal Oxide) | 600V | 12A (Tc) | 10V | 5V @ 250µA | 40nC @ 10V | 1890pF @ 25V | ±30V | - | 231W (Tc) | 650 mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 330V 25A D2PAK
|
package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Voorraad2.624 |
|
MOSFET (Metal Oxide) | 330V | 25A (Tc) | 10V | 5V @ 250µA | 75nC @ 15V | 2010pF @ 25V | ±30V | - | 3.1W (Ta), 250W (Tc) | 230 mOhm @ 12.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK (TO-263AB) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Vishay Siliconix |
MOSFET N-CH 150V 4A PPAK SO-8
|
package: PowerPAK? SO-8 |
Voorraad26.952 |
|
MOSFET (Metal Oxide) | 150V | 4A (Ta) | 10V | 4.5V @ 250µA | 36nC @ 10V | - | ±20V | - | 1.9W (Ta) | 50 mOhm @ 5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SO-8 | PowerPAK? SO-8 |
||
Renesas Electronics America |
MOSFET N-CH 40V 35A 8HSON
|
package: 8-SMD, Flat Lead Exposed Pad |
Voorraad5.680 |
|
MOSFET (Metal Oxide) | 40V | 35A (Tc) | 10V | 4V @ 250µA | 54nC @ 10V | 2850pF @ 25V | ±20V | - | 1W (Ta), 77W (Tc) | 10 mOhm @ 17.5A, 10V | 175°C (TJ) | Surface Mount | 8-HSON | 8-SMD, Flat Lead Exposed Pad |
||
ON Semiconductor |
MOSFET N-CH 60V SO8FL
|
package: 8-PowerTDFN, 5 Leads |
Voorraad2.064 |
|
MOSFET (Metal Oxide) | 60V | 8.8A (Ta), 25A (Tc) | 4.5V, 10V | 2V @ 16µA | 5nC @ 10V | 410pF @ 25V | ±20V | - | 3.5W (Ta), 28W (Tc) | 21 mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 30V 68A DFN5X6
|
package: 8-PowerSMD, Flat Leads |
Voorraad58.320 |
|
MOSFET (Metal Oxide) | 30V | 27A (Ta), 68A (Tc) | 4.5V, 10V | 2.3V @ 250µA | 23nC @ 10V | 1080pF @ 15V | ±20V | - | 5.7W (Ta), 35.5W (Tc) | 5 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (5x6) | 8-PowerSMD, Flat Leads |
||
TSC America Inc. |
MOSFET, SINGLE, N-CHANNEL, TRENC
|
package: TO-236-3, SC-59, SOT-23-3 |
Voorraad4.016 |
|
MOSFET (Metal Oxide) | 30V | 5.8A (Ta) | 4.5V, 10V | 3V @ 250µA | 13.8nC @ 10V | 400.96pF @ 15V | ±20V | - | 750mW (Ta) | 30 mOhm @ 5.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
||
IXYS |
MOSFET N-CH 600V 28A TO3P
|
package: TO-3P-3, SC-65-3 |
Voorraad6.624 |
|
MOSFET (Metal Oxide) | 600V | 28A (Tc) | 10V | 5V @ 2.5mA | 50nC @ 10V | 3560pF @ 25V | ±30V | - | 695W (Tc) | 260 mOhm @ 14A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
||
ON Semiconductor |
MOSFET N-CH 60V 35A ATPAK
|
package: ATPAK (2 leads+tab) |
Voorraad3.152 |
|
MOSFET (Metal Oxide) | 60V | 35A (Ta) | 4V, 10V | - | 34.5nC @ 10V | 1820pF @ 20V | ±20V | - | 40W (Tc) | 23 mOhm @ 18A, 10V | 150°C (TJ) | Surface Mount | ATPAK | ATPAK (2 leads+tab) |
||
Toshiba Semiconductor and Storage |
MOSFET N CH 600V 9.7A TO-220
|
package: TO-220-3 |
Voorraad6.960 |
|
MOSFET (Metal Oxide) | 600V | 9.7A (Ta) | 10V | 3.7V @ 500µA | 20nC @ 10V | 700pF @ 300V | ±30V | Super Junction | 100W (Tc) | 380 mOhm @ 4.9A, 10V | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 900V 6A TO-220
|
package: TO-220-3 |
Voorraad955.884 |
|
MOSFET (Metal Oxide) | 900V | 6A (Tc) | 10V | 5V @ 250µA | 40nC @ 10V | 1770pF @ 25V | ±30V | - | 167W (Tc) | 2.3 Ohm @ 3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 8TDSON
|
package: 8-PowerTDFN |
Voorraad2.816 |
|
MOSFET (Metal Oxide) | 40V | 40A (Tc) | 7V, 10V | 3.4V @ 17µA | 23nC @ 10V | 1300pF @ 25V | ±20V | - | 48W (Tc) | 5.4 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TSDSON-8 | 8-PowerTDFN |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 30V 84A D-PAK
|
package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Voorraad119.388 |
|
MOSFET (Metal Oxide) | 30V | 84A (Ta) | 4.5V, 10V | 3V @ 250µA | 56nC @ 10V | 3845pF @ 15V | ±20V | - | 83W (Ta) | 5 mOhm @ 18A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 92A 8DSOP
|
package: 8-PowerWDFN |
Voorraad7.344 |
|
MOSFET (Metal Oxide) | 100V | 92A (Tc) | 10V | 4V @ 1mA | 58nC @ 10V | 5200pF @ 50V | ±20V | - | 800mW (Ta), 142W (Tc) | 4.5 mOhm @ 46A, 10V | 150°C (TJ) | Surface Mount | 8-DSOP Advance | 8-PowerWDFN |
||
IXYS Integrated Circuits Division |
MOSFET N-CH 250V 360MA SOT-89
|
package: TO-243AA |
Voorraad350.388 |
|
MOSFET (Metal Oxide) | 250V | 360mA (Ta) | 0V | - | - | 350pF @ 25V | ±15V | Depletion Mode | 1.1W (Ta) | 4 Ohm @ 200mA, 0V | -55°C ~ 125°C (TA) | Surface Mount | SOT-89-3 | TO-243AA |
||
Vishay Siliconix |
MOSFET N-CH 60V 2.5A 4-DIP
|
package: 4-DIP (0.300", 7.62mm) |
Voorraad150.600 |
|
MOSFET (Metal Oxide) | 60V | 2.5A (Ta) | 4V, 5V | 2V @ 250µA | 18nC @ 5V | 870pF @ 25V | ±10V | - | 1.3W (Ta) | 100 mOhm @ 1.5A, 5V | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP, Hexdip, HVMDIP | 4-DIP (0.300", 7.62mm) |
||
Vishay Siliconix |
MOSFET P-CH 30V 35A PPAK 1212-8
|
package: PowerPAK? 1212-8 |
Voorraad43.392 |
|
MOSFET (Metal Oxide) | 30V | 35A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 102nC @ 10V | 3595pF @ 15V | ±25V | - | 3.7W (Ta), 52W (Tc) | 7.2 mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? 1212-8 | PowerPAK? 1212-8 |
||
Diodes Incorporated |
MOSFET N-CH 50V 200MA SC70-3
|
package: SC-70, SOT-323 |
Voorraad1.850.112 |
|
MOSFET (Metal Oxide) | 50V | 200mA (Ta) | 10V | 1.5V @ 250µA | - | 50pF @ 10V | ±20V | - | 200mW (Ta) | 3.5 Ohm @ 220mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-323 | SC-70, SOT-323 |
||
Nexperia USA Inc. |
N-CHANNEL 100 V, 40 MOHM, STANDA
|
package: - |
Voorraad17.358 |
|
MOSFET (Metal Oxide) | 100 V | 17A | - | - | 6.6 nC @ 10 V | - | - | - | 21W | - | - | Surface Mount | MLPAK33 | 8-PowerVDFN |
||
Goford Semiconductor |
N650V,RD(MAX)<360M@10V,VTH2.5V~4
|
package: - |
Voorraad294 |
|
MOSFET (Metal Oxide) | 650 V | 11A (Tc) | 10V | 4V @ 250µA | 21 nC @ 10 V | 901 pF @ 50 V | ±30V | - | 192W (Tc) | 360mOhm @ 5.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
Renesas Electronics Corporation |
P-CHANNEL POWER MOSFET
|
package: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Panjit International Inc. |
100V P-CHANNEL ENHANCEMENT MODE
|
package: - |
Voorraad26.646 |
|
MOSFET (Metal Oxide) | 100 V | 2.6A (Ta) | 4.5V, 10V | 3V @ 250µA | 20 nC @ 10 V | 1419 pF @ 25 V | ±20V | - | 3.1W (Ta) | 210mOhm @ 2.6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
||
Micro Commercial Co |
MOSFET P-CH
|
package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 5A (Ta) | 10V | 3.5V @ 250µA | 26 nC @ 10 V | 1450 pF @ 20 V | ±20V | - | - | 80mOhm @ 5A, 10V | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
||
EPC |
Linear IC's
|
package: - |
Request a Quote |
|
GaNFET (Gallium Nitride) | 200 V | 48A (Ta) | 5V | 2.5V @ 4mA | 10.6 nC @ 5 V | 1401 pF @ 100 V | +6V, -4V | - | - | 10mOhm @ 16A, 5V | -40°C ~ 150°C (TJ) | Surface Mount | 7-QFN (3x5) | 7-PowerWQFN |