Pagina 1254 - Transistors - FET's, MOSFET's - Single | Discrete halfgeleiderproducten

IRF7701GTRPBF

Infineon Technologies

MOSFET P-CH 12V 10A 8-TSSOP

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 5050pF @ 10V
Vgs (Max): ±8V
FET Feature: -
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 11 mOhm @ 10A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)

package: 8-TSSOP (0.173", 4.40mm Width)

Voorraad2.736

MOSFET (Metal Oxide)

12V

10A (Ta)

1.8V, 4.5V

1.2V @ 250µA

100nC @ 4.5V

5050pF @ 10V

±8V

-

1.5W (Ta)

11 mOhm @ 10A, 4.5V

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP

8-TSSOP (0.173", 4.40mm Width)

IRF8010SPBF

Infineon Technologies

MOSFET N-CH 100V 80A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3830pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 260W (Tc)
Rds On (Max) @ Id, Vgs: 15 mOhm @ 45A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Voorraad14.568

MOSFET (Metal Oxide)

100V

80A (Tc)

10V

4V @ 250µA

120nC @ 10V

3830pF @ 25V

±20V

-

260W (Tc)

15 mOhm @ 45A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

D2PAK

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

CA/JCOP/MF4K/4B-UZ

NXP

CA/JCOP/MF4K/4B-UZ

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

package: -

Voorraad7.328

-

JAN2N6802

Microsemi Corporation

MOSFET N-CH TO-205AF TO-39

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 2.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-39
Package / Case: TO-205AF Metal Can

package: TO-205AF Metal Can

Voorraad5.664

MOSFET (Metal Oxide)

500V

2.5A (Tc)

10V

4V @ 250µA

33nC @ 10V

-

±20V

-

800mW (Ta), 25W (Tc)

1.6 Ohm @ 2.5A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-39

TO-205AF Metal Can

BUK9E3R7-60E,127

NXP

MOSFET N-CH 60V 120A I2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 95nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 13490pF @ 25V
Vgs (Max): ±10V
FET Feature: -
Power Dissipation (Max): 293W (Tc)
Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 25A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: I2PAK
Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

package: TO-262-3 Long Leads, I2Pak, TO-262AA

Voorraad3.776

MOSFET (Metal Oxide)

60V

120A (Tc)

5V, 10V

2.1V @ 1mA

95nC @ 5V

13490pF @ 25V

±10V

-

293W (Tc)

3.4 mOhm @ 25A, 10V

-55°C ~ 175°C (TJ)

Through Hole

I2PAK

TO-262-3 Long Leads, I2Pak, TO-262AA

SPP07N60S5XKSA1

Infineon Technologies

LOW POWER_LEGACY

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

package: -

Voorraad5.744

-

AOT262L

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 60V 20A TO220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 140A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 9800pF @ 30V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.1W (Ta), 333W (Tc)
Rds On (Max) @ Id, Vgs: 3 mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220
Package / Case: TO-220-3

package: TO-220-3

Voorraad24.012

MOSFET (Metal Oxide)

60V

20A (Ta), 140A (Tc)

6V, 10V

3.2V @ 250µA

115nC @ 10V

9800pF @ 30V

±20V

-

2.1W (Ta), 333W (Tc)

3 mOhm @ 20A, 10V

-55°C ~ 175°C (TJ)

Through Hole

TO-220

TO-220-3

AOTF8N80

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 800V 7.4A TO220F

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 1.63 Ohm @ 4A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220-3F
Package / Case: TO-220-3 Full Pack

package: TO-220-3 Full Pack

Voorraad11.592

MOSFET (Metal Oxide)

800V

7.4A (Tc)

10V

4.5V @ 250µA

32nC @ 10V

1650pF @ 25V

±30V

-

50W (Tc)

1.63 Ohm @ 4A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-220-3F

TO-220-3 Full Pack

PSMN4R1-60YLX

Nexperia USA Inc.

PSMN4R1-60YL/SOT669/LFPAK

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

package: -

Voorraad7.600

-

STW9NK90Z

STMicroelectronics

MOSFET N-CH 900V 8A TO-247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2115pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 160W (Tc)
Rds On (Max) @ Id, Vgs: 1.3 Ohm @ 3.6A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247-3
Package / Case: TO-247-3

package: TO-247-3

Voorraad44.196

MOSFET (Metal Oxide)

900V

8A (Tc)

10V

4.5V @ 100µA

72nC @ 10V

2115pF @ 25V

±30V

-

160W (Tc)

1.3 Ohm @ 3.6A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-247-3

SSM3K72CFS,LF

Toshiba Semiconductor and Storage

MOSFET N-CH 60V 0.17A

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 10V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 3.9 Ohm @ 100mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SSM
Package / Case: SC-75, SOT-416

package: SC-75, SOT-416

Voorraad7.360

MOSFET (Metal Oxide)

60V

170mA (Ta)

4.5V, 10V

2.1V @ 250µA

0.35nC @ 4.5V

17pF @ 10V

±20V

-

150mW (Ta)

3.9 Ohm @ 100mA, 10V

-55°C ~ 150°C (TJ)

Surface Mount

SSM

SC-75, SOT-416

RDX080N50FU6

Rohm Semiconductor

MOSFET N-CH 500V 8A TO-220FM

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 850 mOhm @ 4A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220FM
Package / Case: TO-220-2 Full Pack

package: TO-220-2 Full Pack

Voorraad20.784

MOSFET (Metal Oxide)

500V

8A (Ta)

10V

4V @ 1mA

28nC @ 10V

920pF @ 25V

±30V

-

40W (Tc)

850 mOhm @ 4A, 10V

150°C (TJ)

Through Hole

TO-220FM

TO-220-2 Full Pack

SI7464DP-T1-E3

Vishay Siliconix

MOSFET N-CH 200V 1.8A PPAK SO-8

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 240 mOhm @ 2.8A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK? SO-8
Package / Case: PowerPAK? SO-8

package: PowerPAK? SO-8

Voorraad34.860

MOSFET (Metal Oxide)

200V

1.8A (Ta)

6V, 10V

4V @ 250µA

18nC @ 10V

-

±20V

-

1.8W (Ta)

240 mOhm @ 2.8A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? SO-8

BSC22DN20NS3 G

Infineon Technologies

MOSFET N-CH 200V 7A 8TDSON

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 13µA
Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 430pF @ 100V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 34W (Tc)
Rds On (Max) @ Id, Vgs: 225 mOhm @ 3.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8
Package / Case: 8-PowerTDFN

package: 8-PowerTDFN

Voorraad46.122

MOSFET (Metal Oxide)

200V

7A (Tc)

10V

4V @ 13µA

5.6nC @ 10V

430pF @ 100V

±20V

-

34W (Tc)

225 mOhm @ 3.5A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TDSON-8

8-PowerTDFN

DMN2005LPK-7

Diodes Incorporated

MOSFET N-CH 20V 440MA 3-DFN

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 440mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs(th) (Max) @ Id: 1.2V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): ±10V
FET Feature: -
Power Dissipation (Max): 450mW (Ta)
Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 10mA, 4V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 3-DFN1006 (1.0x0.6)
Package / Case: 3-UFDFN

package: 3-UFDFN

Voorraad87.000

MOSFET (Metal Oxide)

20V

440mA (Ta)

1.5V, 4V

1.2V @ 100µA

-

±10V

-

450mW (Ta)

1.5 Ohm @ 10mA, 4V

-65°C ~ 150°C (TJ)

Surface Mount

3-DFN1006 (1.0x0.6)

3-UFDFN

NVMYS029N08LHTWG

onsemi

T8 80V LL LFPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 431 pF @ 40 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.5W (Ta), 33W (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: LFPAK4 (5x6)
Package / Case: SOT-1023, 4-LFPAK

package: -

Request a Quote

MOSFET (Metal Oxide)

80 V

7A (Ta), 22A (Tc)

4.5V, 10V

2V @ 20µA

9 nC @ 10 V

431 pF @ 40 V

±20V

-

3.5W (Ta), 33W (Tc)

29mOhm @ 5A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

LFPAK4 (5x6)

SOT-1023, 4-LFPAK

IXFH18N65X2

IXYS

MOSFET N-CH 650V 18A TO247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 25 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 290W (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 9A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247 (IXTH)
Package / Case: TO-247-3

package: -

Request a Quote

MOSFET (Metal Oxide)

650 V

18A (Tc)

10V

5V @ 1.5mA

29 nC @ 10 V

1520 pF @ 25 V

±30V

-

290W (Tc)

200mOhm @ 9A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-247 (IXTH)

TO-247-3

SIS782DN-T1-GE3

Vishay Siliconix

MOSFET N-CH 30V 16A PPAK1212-8

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1025 pF @ 15 V
Vgs (Max): ±20V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 41W (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8

package: -

Voorraad26.292

MOSFET (Metal Oxide)

30 V

16A (Tc)

4.5V, 10V

2.3V @ 250µA

30.5 nC @ 10 V

1025 pF @ 15 V

±20V

Schottky Diode (Body)

41W (Tc)

9.5mOhm @ 10A, 10V

-50°C ~ 150°C (TJ)

Surface Mount

PowerPAK® 1212-8

NIF9N05CLT3G-SY

Sanyo

2.6 A, 52 V, N-CHANNEL, LOGIC LE

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

package: -

Request a Quote

-

IPP60R450E6XKSA1

Infineon Technologies

MOSFET N-CH 600V 9.2A TO220-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 280µA
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 100 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 74W (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 3.4A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3
Package / Case: TO-220-3

package: -

Request a Quote

MOSFET (Metal Oxide)

600 V

9.2A (Tc)

10V

3.5V @ 280µA

28 nC @ 10 V

620 pF @ 100 V

±20V

-

74W (Tc)

450mOhm @ 3.4A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO220-3

TO-220-3

FCPF400N80ZL1-F154

onsemi

MOSFET N-CH 800V 11A TO220F-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800 V
Current - Continuous Drain (Id) @ 25°C: 11A (Tj)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 4.5V @ 1.1mA
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 35.7W (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 5.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220F-3
Package / Case: TO-220-3 Full Pack

package: -

Request a Quote

MOSFET (Metal Oxide)

800 V

11A (Tj)

-

4.5V @ 1.1mA

56 nC @ 10 V

2350 pF @ 100 V

±20V

-

35.7W (Tc)

400mOhm @ 5.5A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-220F-3

TO-220-3 Full Pack

IRF9620PBF-BE3

Vishay Siliconix

MOSFET P-CH 200V 3.5A TO220AB

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200 V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

package: -

Voorraad2.376

MOSFET (Metal Oxide)

200 V

3.5A (Tc)

-

4V @ 250µA

22 nC @ 10 V

350 pF @ 25 V

±20V

-

40W (Tc)

1.5Ohm @ 1.5A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-220AB

TO-220-3

IRFR3711ZCTRPBF

Infineon Technologies

MOSFET N-CH 20V 93A DPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20 V
Current - Continuous Drain (Id) @ 25°C: 93A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 2.45V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2160 pF @ 10 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 15A, 10V
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: TO-252AA (DPAK)
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

package: -

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MOSFET (Metal Oxide)

20 V

93A (Tc)

-

2.45V @ 250µA

27 nC @ 4.5 V

2160 pF @ 10 V

-

5.7mOhm @ 15A, 10V

-

Surface Mount

TO-252AA (DPAK)

TO-252-3, DPAK (2 Leads + Tab), SC-63

NVMFSW6D1N08HT1G

onsemi

MOSFET N-CH 80V 17A/89A 5DFN

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 89A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 120µA
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2085 pF @ 40 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.8W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Package / Case: 8-PowerTDFN, 5 Leads

package: -

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MOSFET (Metal Oxide)

80 V

17A (Ta), 89A (Tc)

10V

4V @ 120µA

32 nC @ 10 V

2085 pF @ 40 V

±20V

-

3.8W (Ta), 104W (Tc)

5.5mOhm @ 20A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

5-DFN (5x6) (8-SOFL)

8-PowerTDFN, 5 Leads

SPD04N60C2

Infineon Technologies

N-CHANNEL POWER MOSFET

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs: 22.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252-3-1
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

package: -

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MOSFET (Metal Oxide)

600 V

4.5A (Tc)

10V

5.5V @ 200µA

22.9 nC @ 10 V

580 pF @ 25 V

±20V

-

50W (Tc)

950mOhm @ 2.8A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TO252-3-1

TO-252-3, DPAK (2 Leads + Tab), SC-63

IQE030N06NM5CGSCATMA1

Infineon Technologies

OPTIMOS LOWVOLTAGE POWER MOSFET

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 132A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.3V @ 50µA
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 30 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-WHTFN-9-1
Package / Case: 9-PowerWDFN

package: -

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MOSFET (Metal Oxide)

60 V

21A (Ta), 132A (Tc)

6V, 10V

3.3V @ 50µA

49 nC @ 10 V

3800 pF @ 30 V

±20V

-

2.5W (Ta), 100W (Tc)

3mOhm @ 20A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-WHTFN-9-1

9-PowerWDFN

RSQ020N03HZGTR

Rohm Semiconductor

MOSFET N-CH 30V 2A TSMT6

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 3.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 10 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 134mOhm @ 2A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TSMT6 (SC-95)
Package / Case: SOT-23-6 Thin, TSOT-23-6

package: -

Voorraad3.690

MOSFET (Metal Oxide)

30 V

2A (Ta)

4V, 10V

2.5V @ 1mA

3.1 nC @ 5 V

110 pF @ 10 V

±20V

-

950mW (Ta)

134mOhm @ 2A, 10V

150°C (TJ)

Surface Mount

TSMT6 (SC-95)

SOT-23-6 Thin, TSOT-23-6

IRF610PBF-BE3

Vishay Siliconix

MOSFET N-CH 200V 3.3A TO220AB

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200 V
Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 36W (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

package: -

Voorraad22.377

MOSFET (Metal Oxide)

200 V

3.3A (Tc)

10V

4V @ 250µA

8.2 nC @ 10 V

140 pF @ 25 V

±20V

-

36W (Tc)

1.5Ohm @ 2A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-220AB

TO-220-3

Onderdeelnummer	Fabrikant	Omschrijving	package	Voorraad	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRF7701GTRPBF	Infineon Technologies	MOSFET P-CH 12V 10A 8-TSSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 5050pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 11 mOhm @ 10A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSSOP Package / Case: 8-TSSOP (0.173", 4.40mm Width)	package: 8-TSSOP (0.173", 4.40mm Width)	Voorraad2.736	MOSFET (Metal Oxide)	12V	10A (Ta)	1.8V, 4.5V	1.2V @ 250µA	100nC @ 4.5V	5050pF @ 10V	±8V	-	1.5W (Ta)	11 mOhm @ 10A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP	8-TSSOP (0.173", 4.40mm Width)
IRF8010SPBF	Infineon Technologies	MOSFET N-CH 100V 80A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3830pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 260W (Tc) Rds On (Max) @ Id, Vgs: 15 mOhm @ 45A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Voorraad14.568	MOSFET (Metal Oxide)	100V	80A (Tc)	10V	4V @ 250µA	120nC @ 10V	3830pF @ 25V	±20V	-	260W (Tc)	15 mOhm @ 45A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
CA/JCOP/MF4K/4B-UZ	NXP	CA/JCOP/MF4K/4B-UZ FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	package: -	Voorraad7.328	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
JAN2N6802	Microsemi Corporation	MOSFET N-CH TO-205AF TO-39 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 800mW (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 2.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-39 Package / Case: TO-205AF Metal Can	package: TO-205AF Metal Can	Voorraad5.664	MOSFET (Metal Oxide)	500V	2.5A (Tc)	10V	4V @ 250µA	33nC @ 10V	-	±20V	-	800mW (Ta), 25W (Tc)	1.6 Ohm @ 2.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-39	TO-205AF Metal Can
BUK9E3R7-60E,127	NXP	MOSFET N-CH 60V 120A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 95nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 13490pF @ 25V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 293W (Tc) Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	package: TO-262-3 Long Leads, I2Pak, TO-262AA	Voorraad3.776	MOSFET (Metal Oxide)	60V	120A (Tc)	5V, 10V	2.1V @ 1mA	95nC @ 5V	13490pF @ 25V	±10V	-	293W (Tc)	3.4 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
SPP07N60S5XKSA1	Infineon Technologies	LOW POWER_LEGACY FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	package: -	Voorraad5.744	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
AOT262L	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 60V 20A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 140A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9800pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 333W (Tc) Rds On (Max) @ Id, Vgs: 3 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	package: TO-220-3	Voorraad24.012	MOSFET (Metal Oxide)	60V	20A (Ta), 140A (Tc)	6V, 10V	3.2V @ 250µA	115nC @ 10V	9800pF @ 30V	±20V	-	2.1W (Ta), 333W (Tc)	3 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220	TO-220-3
AOTF8N80	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 800V 7.4A TO220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 1.63 Ohm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3F Package / Case: TO-220-3 Full Pack	package: TO-220-3 Full Pack	Voorraad11.592	MOSFET (Metal Oxide)	800V	7.4A (Tc)	10V	4.5V @ 250µA	32nC @ 10V	1650pF @ 25V	±30V	-	50W (Tc)	1.63 Ohm @ 4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3F	TO-220-3 Full Pack
PSMN4R1-60YLX	Nexperia USA Inc.	PSMN4R1-60YL/SOT669/LFPAK FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	package: -	Voorraad7.600	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
STW9NK90Z	STMicroelectronics	MOSFET N-CH 900V 8A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2115pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 160W (Tc) Rds On (Max) @ Id, Vgs: 1.3 Ohm @ 3.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	package: TO-247-3	Voorraad44.196	MOSFET (Metal Oxide)	900V	8A (Tc)	10V	4.5V @ 100µA	72nC @ 10V	2115pF @ 25V	±30V	-	160W (Tc)	1.3 Ohm @ 3.6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
SSM3K72CFS,LF	Toshiba Semiconductor and Storage	MOSFET N-CH 60V 0.17A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 3.9 Ohm @ 100mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SSM Package / Case: SC-75, SOT-416	package: SC-75, SOT-416	Voorraad7.360	MOSFET (Metal Oxide)	60V	170mA (Ta)	4.5V, 10V	2.1V @ 250µA	0.35nC @ 4.5V	17pF @ 10V	±20V	-	150mW (Ta)	3.9 Ohm @ 100mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SSM	SC-75, SOT-416
RDX080N50FU6	Rohm Semiconductor	MOSFET N-CH 500V 8A TO-220FM FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 850 mOhm @ 4A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-2 Full Pack	package: TO-220-2 Full Pack	Voorraad20.784	MOSFET (Metal Oxide)	500V	8A (Ta)	10V	4V @ 1mA	28nC @ 10V	920pF @ 25V	±30V	-	40W (Tc)	850 mOhm @ 4A, 10V	150°C (TJ)	Through Hole	TO-220FM	TO-220-2 Full Pack
SI7464DP-T1-E3	Vishay Siliconix	MOSFET N-CH 200V 1.8A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.8W (Ta) Rds On (Max) @ Id, Vgs: 240 mOhm @ 2.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	package: PowerPAK? SO-8	Voorraad34.860	MOSFET (Metal Oxide)	200V	1.8A (Ta)	6V, 10V	4V @ 250µA	18nC @ 10V	-	±20V	-	1.8W (Ta)	240 mOhm @ 2.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
BSC22DN20NS3 G	Infineon Technologies	MOSFET N-CH 200V 7A 8TDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 13µA Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 430pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 34W (Tc) Rds On (Max) @ Id, Vgs: 225 mOhm @ 3.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 Package / Case: 8-PowerTDFN	package: 8-PowerTDFN	Voorraad46.122	MOSFET (Metal Oxide)	200V	7A (Tc)	10V	4V @ 13µA	5.6nC @ 10V	430pF @ 100V	±20V	-	34W (Tc)	225 mOhm @ 3.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8	8-PowerTDFN
DMN2005LPK-7	Diodes Incorporated	MOSFET N-CH 20V 440MA 3-DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 440mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Vgs(th) (Max) @ Id: 1.2V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 450mW (Ta) Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 10mA, 4V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 3-DFN1006 (1.0x0.6) Package / Case: 3-UFDFN	package: 3-UFDFN	Voorraad87.000	MOSFET (Metal Oxide)	20V	440mA (Ta)	1.5V, 4V	1.2V @ 100µA	-	-	±10V	-	450mW (Ta)	1.5 Ohm @ 10mA, 4V	-65°C ~ 150°C (TJ)	Surface Mount	3-DFN1006 (1.0x0.6)	3-UFDFN
NVMYS029N08LHTWG	onsemi	T8 80V LL LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 431 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.5W (Ta), 33W (Tc) Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK4 (5x6) Package / Case: SOT-1023, 4-LFPAK	package: -	Request a Quote	MOSFET (Metal Oxide)	80 V	7A (Ta), 22A (Tc)	4.5V, 10V	2V @ 20µA	9 nC @ 10 V	431 pF @ 40 V	±20V	-	3.5W (Ta), 33W (Tc)	29mOhm @ 5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK4 (5x6)	SOT-1023, 4-LFPAK
IXFH18N65X2	IXYS	MOSFET N-CH 650V 18A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 290W (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXTH) Package / Case: TO-247-3	package: -	Request a Quote	MOSFET (Metal Oxide)	650 V	18A (Tc)	10V	5V @ 1.5mA	29 nC @ 10 V	1520 pF @ 25 V	±30V	-	290W (Tc)	200mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 (IXTH)	TO-247-3
SIS782DN-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 16A PPAK1212-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1025 pF @ 15 V Vgs (Max): ±20V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 41W (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 1212-8 Package / Case: PowerPAK® 1212-8	package: -	Voorraad26.292	MOSFET (Metal Oxide)	30 V	16A (Tc)	4.5V, 10V	2.3V @ 250µA	30.5 nC @ 10 V	1025 pF @ 15 V	±20V	Schottky Diode (Body)	41W (Tc)	9.5mOhm @ 10A, 10V	-50°C ~ 150°C (TJ)	Surface Mount	PowerPAK® 1212-8	PowerPAK® 1212-8
NIF9N05CLT3G-SY	Sanyo	2.6 A, 52 V, N-CHANNEL, LOGIC LE FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPP60R450E6XKSA1	Infineon Technologies	MOSFET N-CH 600V 9.2A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 280µA Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 74W (Tc) Rds On (Max) @ Id, Vgs: 450mOhm @ 3.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	9.2A (Tc)	10V	3.5V @ 280µA	28 nC @ 10 V	620 pF @ 100 V	±20V	-	74W (Tc)	450mOhm @ 3.4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-3	TO-220-3
FCPF400N80ZL1-F154	onsemi	MOSFET N-CH 800V 11A TO220F-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 11A (Tj) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4.5V @ 1.1mA Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 35.7W (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 5.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F-3 Package / Case: TO-220-3 Full Pack	package: -	Request a Quote	MOSFET (Metal Oxide)	800 V	11A (Tj)	-	4.5V @ 1.1mA	56 nC @ 10 V	2350 pF @ 100 V	±20V	-	35.7W (Tc)	400mOhm @ 5.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F-3	TO-220-3 Full Pack
IRF9620PBF-BE3	Vishay Siliconix	MOSFET P-CH 200V 3.5A TO220AB FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	package: -	Voorraad2.376	MOSFET (Metal Oxide)	200 V	3.5A (Tc)	-	4V @ 250µA	22 nC @ 10 V	350 pF @ 25 V	±20V	-	40W (Tc)	1.5Ohm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRFR3711ZCTRPBF	Infineon Technologies	MOSFET N-CH 20V 93A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 93A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2.45V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2160 pF @ 10 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 5.7mOhm @ 15A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: TO-252AA (DPAK) Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	package: -	Request a Quote	MOSFET (Metal Oxide)	20 V	93A (Tc)	-	2.45V @ 250µA	27 nC @ 4.5 V	2160 pF @ 10 V	-	-	-	5.7mOhm @ 15A, 10V	-	Surface Mount	TO-252AA (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
NVMFSW6D1N08HT1G	onsemi	MOSFET N-CH 80V 17A/89A 5DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 89A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 120µA Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2085 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 104W (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	package: -	Request a Quote	MOSFET (Metal Oxide)	80 V	17A (Ta), 89A (Tc)	10V	4V @ 120µA	32 nC @ 10 V	2085 pF @ 40 V	±20V	-	3.8W (Ta), 104W (Tc)	5.5mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
SPD04N60C2	Infineon Technologies	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 22.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3-1 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	4.5A (Tc)	10V	5.5V @ 200µA	22.9 nC @ 10 V	580 pF @ 25 V	±20V	-	50W (Tc)	950mOhm @ 2.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO252-3-1	TO-252-3, DPAK (2 Leads + Tab), SC-63
IQE030N06NM5CGSCATMA1	Infineon Technologies	OPTIMOS LOWVOLTAGE POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 132A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.3V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 100W (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-WHTFN-9-1 Package / Case: 9-PowerWDFN	package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	21A (Ta), 132A (Tc)	6V, 10V	3.3V @ 50µA	49 nC @ 10 V	3800 pF @ 30 V	±20V	-	2.5W (Ta), 100W (Tc)	3mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-WHTFN-9-1	9-PowerWDFN
RSQ020N03HZGTR	Rohm Semiconductor	MOSFET N-CH 30V 2A TSMT6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.1 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 950mW (Ta) Rds On (Max) @ Id, Vgs: 134mOhm @ 2A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT6 (SC-95) Package / Case: SOT-23-6 Thin, TSOT-23-6	package: -	Voorraad3.690	MOSFET (Metal Oxide)	30 V	2A (Ta)	4V, 10V	2.5V @ 1mA	3.1 nC @ 5 V	110 pF @ 10 V	±20V	-	950mW (Ta)	134mOhm @ 2A, 10V	150°C (TJ)	Surface Mount	TSMT6 (SC-95)	SOT-23-6 Thin, TSOT-23-6
IRF610PBF-BE3	Vishay Siliconix	MOSFET N-CH 200V 3.3A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 36W (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	package: -	Voorraad22.377	MOSFET (Metal Oxide)	200 V	3.3A (Tc)	10V	4V @ 250µA	8.2 nC @ 10 V	140 pF @ 25 V	±20V	-	36W (Tc)	1.5Ohm @ 2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3