Pagina 9 - Transistors - FET's, MOSFET's - Arrays | Discrete halfgeleiderproducten | Heisener Electronics
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Transistors - FET's, MOSFET's - Arrays

Archief 5.684
Pagina  9/203
Afbeelding
Onderdeelnummer
Fabrikant
Omschrijving
package
Voorraad
Aantal
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
BSO303PNTMA1
Infineon Technologies

MOSFET 2P-CH 30V 8.2A 8DSO

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8.2A
  • Rds On (Max) @ Id, Vgs: 21 mOhm @ 8.2A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 72.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1761pF @ 25V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: P-DSO-8
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad3.648
Logic Level Gate
30V
8.2A
21 mOhm @ 8.2A, 10V
2V @ 100µA
72.5nC @ 10V
1761pF @ 25V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
P-DSO-8
PMDPB28UN,115
NXP

MOSFET 2N-CH 20V 4.6A HUSON6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.6A
  • Rds On (Max) @ Id, Vgs: 37 mOhm @ 4.6A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 265pF @ 10V
  • Power - Max: 510mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: DFN2020-6
package: 6-UDFN Exposed Pad
Voorraad5.904
Logic Level Gate
20V
4.6A
37 mOhm @ 4.6A, 4.5V
1V @ 250µA
4.7nC @ 4.5V
265pF @ 10V
510mW
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
DFN2020-6
hot AO4850
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 75V 2.3A 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 2.3A
  • Rds On (Max) @ Id, Vgs: 130 mOhm @ 3.1A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 30V
  • Power - Max: 1.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad406.548
Logic Level Gate
75V
2.3A
130 mOhm @ 3.1A, 10V
3V @ 250µA
7nC @ 10V
380pF @ 30V
1.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
SI7909DN-T1-GE3
Vishay Siliconix

MOSFET 2P-CH 12V 5.3A 1212-8

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 5.3A
  • Rds On (Max) @ Id, Vgs: 37 mOhm @ 7.7A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 700µA
  • Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.3W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? 1212-8 Dual
  • Supplier Device Package: PowerPAK? 1212-8 Dual
package: PowerPAK? 1212-8 Dual
Voorraad7.328
Logic Level Gate
12V
5.3A
37 mOhm @ 7.7A, 4.5V
1V @ 700µA
24nC @ 4.5V
-
1.3W
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? 1212-8 Dual
PowerPAK? 1212-8 Dual
hot SI4923DY-T1-E3
Vishay Siliconix

MOSFET 2P-CH 30V 6.2A 8-SOIC

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6.2A
  • Rds On (Max) @ Id, Vgs: 21 mOhm @ 8.3A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad63.852
Logic Level Gate
30V
6.2A
21 mOhm @ 8.3A, 10V
3V @ 250µA
70nC @ 10V
-
1.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
APTM100A23SCTG
Microsemi Corporation

MOSFET 2N-CH 1000V 36A SP4

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Silicon Carbide (SiC)
  • Drain to Source Voltage (Vdss): 1000V (1kV)
  • Current - Continuous Drain (Id) @ 25°C: 36A
  • Rds On (Max) @ Id, Vgs: 270 mOhm @ 18A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 308nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 8700pF @ 25V
  • Power - Max: 694W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP4
  • Supplier Device Package: SP4
package: SP4
Voorraad4.480
Silicon Carbide (SiC)
1000V (1kV)
36A
270 mOhm @ 18A, 10V
5V @ 5mA
308nC @ 10V
8700pF @ 25V
694W
-40°C ~ 150°C (TJ)
Chassis Mount
SP4
SP4
hot FDW2511NZ
Fairchild/ON Semiconductor

MOSFET 2N-CH 20V 7.1A 8TSSOP

  • FET Type: 2 N-Channel (Dual) Common Drain
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 7.1A
  • Rds On (Max) @ Id, Vgs: 20 mOhm @ 7.1A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 10V
  • Power - Max: 1.6W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
package: 8-TSSOP (0.173", 4.40mm Width)
Voorraad167.628
Logic Level Gate
20V
7.1A
20 mOhm @ 7.1A, 4.5V
1.5V @ 250µA
17.3nC @ 4.5V
1000pF @ 10V
1.6W
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
hot FDS3601
Fairchild/ON Semiconductor

MOSFET 2N-CH 100V 1.3A 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 1.3A
  • Rds On (Max) @ Id, Vgs: 480 mOhm @ 1.3A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 153pF @ 50V
  • Power - Max: 900mW
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad91.800
Logic Level Gate
100V
1.3A
480 mOhm @ 1.3A, 10V
4V @ 250µA
5nC @ 10V
153pF @ 50V
900mW
-55°C ~ 175°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot PMDPB65UP,115
NXP

MOSFET 2P-CH 20V 3.5A SOT1118

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A
  • Rds On (Max) @ Id, Vgs: 70 mOhm @ 1A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 10V
  • Power - Max: 520mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: DFN2020-6
package: 6-UDFN Exposed Pad
Voorraad162.000
Logic Level Gate
20V
3.5A
70 mOhm @ 1A, 4.5V
1V @ 250µA
6nC @ 4.5V
380pF @ 10V
520mW
150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
DFN2020-6
hot DMN6070SSD-13
Diodes Incorporated

MOSFET 2N-CH 60V 3.3A 8-SO

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 3.3A
  • Rds On (Max) @ Id, Vgs: 80 mOhm @ 12A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 588pF @ 30V
  • Power - Max: 1.2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad16.896
Logic Level Gate
60V
3.3A
80 mOhm @ 12A, 10V
3V @ 250µA
12.3nC @ 10V
588pF @ 30V
1.2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
APTM50H14FT3G
Microsemi Corporation

MOSFET 4N-CH 500V 26A SP3

  • FET Type: 4 N-Channel (H-Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 26A
  • Rds On (Max) @ Id, Vgs: 168 mOhm @ 13A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3259pF @ 25V
  • Power - Max: 208W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP3
  • Supplier Device Package: SP3
package: SP3
Voorraad7.376
Standard
500V
26A
168 mOhm @ 13A, 10V
5V @ 1mA
72nC @ 10V
3259pF @ 25V
208W
-40°C ~ 150°C (TJ)
Chassis Mount
SP3
SP3
AUIRF7342QTR
Infineon Technologies

MOSFET 2P-CH 55V 3.4A 8SOIC

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 3.4A
  • Rds On (Max) @ Id, Vgs: 105 mOhm @ 3.4A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 25V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad6.704
Logic Level Gate
55V
3.4A
105 mOhm @ 3.4A, 10V
3V @ 250µA
38nC @ 10V
690pF @ 25V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot ZXMC4559DN8TC
Diodes Incorporated

MOSFET N/P-CH 60V 3.6A/2.6A 8SO

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 3.6A, 2.6A
  • Rds On (Max) @ Id, Vgs: 55 mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 20.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1063pF @ 30V
  • Power - Max: 2.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad414.252
Logic Level Gate
60V
3.6A, 2.6A
55 mOhm @ 4.5A, 10V
1V @ 250µA (Min)
20.4nC @ 10V
1063pF @ 30V
2.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
FCAB21520L1
Panasonic Electronic Components

GATE RESISTOR INTEGRATED DUAL NC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: 1.4V @ 1.64mA
  • Gate Charge (Qg) (Max) @ Vgs: 38nC @ 4V
  • Input Capacitance (Ciss) (Max) @ Vds: 5250pF @ 10V
  • Power - Max: 3.8W (Ta)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 10-SMD, No Lead
  • Supplier Device Package: 10-SMD
package: 10-SMD, No Lead
Voorraad17.232
Standard
-
-
-
1.4V @ 1.64mA
38nC @ 4V
5250pF @ 10V
3.8W (Ta)
150°C
Surface Mount
10-SMD, No Lead
10-SMD
SI5504BDC-T1-GE3
Vishay Siliconix

MOSFET N/P-CH 30V 4A 1206-8

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4A, 3.7A
  • Rds On (Max) @ Id, Vgs: 65 mOhm @ 3.1A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 15V
  • Power - Max: 3.12W, 3.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 1206-8 ChipFET?
package: 8-SMD, Flat Lead
Voorraad110.814
Logic Level Gate
30V
4A, 3.7A
65 mOhm @ 3.1A, 10V
3V @ 250µA
7nC @ 10V
220pF @ 15V
3.12W, 3.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-SMD, Flat Lead
1206-8 ChipFET?
SLA5074
Sanken

MOSFET 4N-CH 60V 5A 15-SIP

  • FET Type: 4 N-Channel (Half Bridge)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 5A
  • Rds On (Max) @ Id, Vgs: 300 mOhm @ 3A, 4V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V
  • Power - Max: 4.8W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 15-SIP, Exposed Tab, Formed Leads
  • Supplier Device Package: 15-SIP
package: 15-SIP, Exposed Tab, Formed Leads
Voorraad15.084
Logic Level Gate
60V
5A
300 mOhm @ 3A, 4V
2V @ 250µA
-
320pF @ 10V
4.8W
150°C (TJ)
Through Hole
15-SIP, Exposed Tab, Formed Leads
15-SIP
DMN2024UVT-13
Diodes Incorporated

MOSFET 2N-CH 20V 7A TSOT23-6

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
  • Rds On (Max) @ Id, Vgs: 24mOhm @ 6.5A, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 647pF @ 10V
  • Power - Max: 1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: TSOT-23-6
package: -
Request a Quote
-
20V
7A (Ta)
24mOhm @ 6.5A, 4.5V
900mV @ 250µA
7.1nC @ 4.5V
647pF @ 10V
1W
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
TSOT-23-6
SH8M24GZETB
Rohm Semiconductor

MOSFET N/P-CH 45V 6A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 45V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
  • Rds On (Max) @ Id, Vgs: 46mOhm @ 4.5A, 10V, 63mOhm @ 3.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 5V, 18.2nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V, 1700pF @ 10V
  • Power - Max: 1.4W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
package: -
Voorraad27.324
-
45V
6A (Ta)
46mOhm @ 4.5A, 10V, 63mOhm @ 3.5A, 10V
2.5V @ 1mA
9.6nC @ 5V, 18.2nC @ 5V
550pF @ 10V, 1700pF @ 10V
1.4W (Ta)
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
MSCSM70AM19CT1AG
Microchip Technology

SIC 2N-CH 700V 124A SP1F

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 700V
  • Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
  • Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V
  • Vgs(th) (Max) @ Id: 2.4V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 215nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 700V
  • Power - Max: 365W (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: SP1F
package: -
Request a Quote
-
700V
124A (Tc)
19mOhm @ 40A, 20V
2.4V @ 4mA
215nC @ 20V
4500pF @ 700V
365W (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
SP1F
EMH2308-TL-E
onsemi

MOSFET 2P-CH 20V 3A 8EMH

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3A
  • Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 4.5V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V
  • Power - Max: 1.2W
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 8-EMH
package: -
Request a Quote
Logic Level Gate
20V
3A
85mOhm @ 3A, 4.5V
-
4nC @ 4.5V
320pF @ 10V
1.2W
-
Surface Mount
8-SMD, Flat Lead
8-EMH
SQJ974EP-T1_BE3
Vishay Siliconix

MOSFET 2N-CH 100V 30A PPAK SO8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Rds On (Max) @ Id, Vgs: 25.5mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 25V
  • Power - Max: 48W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® SO-8 Dual
  • Supplier Device Package: PowerPAK® SO-8 Dual
package: -
Voorraad18.000
-
100V
30A (Tc)
25.5mOhm @ 10A, 10V
2.5V @ 250µA
30nC @ 10V
1050pF @ 25V
48W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® SO-8 Dual
PowerPAK® SO-8 Dual
SIZF914DT-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 25V 23.5A 8PWRPAIR

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 23.5A (Ta), 40A (Tc), 52A (Ta), 60A (Tc)
  • Rds On (Max) @ Id, Vgs: 3.8mOhm @ 10A, 10V, 0.9mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA, 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V, 98nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 10V, 4670pF @ 10V
  • Power - Max: 3.4W (Ta), 26.6W (Tc), 4W (Ta), 60W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerWDFN
  • Supplier Device Package: 8-PowerPair® (6x5)
package: -
Request a Quote
-
25V
23.5A (Ta), 40A (Tc), 52A (Ta), 60A (Tc)
3.8mOhm @ 10A, 10V, 0.9mOhm @ 10A, 10V
2.4V @ 250µA, 2.2V @ 250µA
21nC @ 10V, 98nC @ 10V
1050pF @ 10V, 4670pF @ 10V
3.4W (Ta), 26.6W (Tc), 4W (Ta), 60W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerWDFN
8-PowerPair® (6x5)
NXV08A170DB2
onsemi

APM12-CBA, MV7 80V, AL2O3, HALF

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 200A (Tj)
  • Rds On (Max) @ Id, Vgs: 0.99mOhm @ 80A, 10V, 1.35mOhm @ 80A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 40V
  • Power - Max: -
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 12-PowerDIP Module (1.118", 28.40mm)
  • Supplier Device Package: APM12-CBA
package: -
Request a Quote
-
80V
200A (Tj)
0.99mOhm @ 80A, 10V, 1.35mOhm @ 80A, 10V
4V @ 250µA
195nC @ 10V
14000pF @ 40V
-
175°C (TJ)
Through Hole
12-PowerDIP Module (1.118", 28.40mm)
APM12-CBA
MSCSM120AM31T1AG
Microchip Technology

SIC 2N-CH 1200V 89A

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
  • Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
  • Vgs(th) (Max) @ Id: 2.8V @ 3mA
  • Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
  • Power - Max: 395W (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
package: -
Request a Quote
-
1200V (1.2kV)
89A (Tc)
31mOhm @ 40A, 20V
2.8V @ 3mA
232nC @ 20V
3020pF @ 1000V
395W (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
-
SSFP4806
Good-Ark Semiconductor

MOSFET 2N-CH 40V 30A 8PPAK

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Rds On (Max) @ Id, Vgs: 9mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V
  • Power - Max: 46W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-PPAK (5.1x5.71)
package: -
Voorraad9.000
-
40V
30A (Tc)
9mOhm @ 8A, 10V
2.5V @ 250µA
24nC @ 4.5V
2200pF @ 25V
46W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerTDFN
8-PPAK (5.1x5.71)
IRFH7911TR2PBF
Infineon Technologies

MOSFET 2N-CH 30V 13A/28A PQFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 13A, 28A
  • Rds On (Max) @ Id, Vgs: 8.6mOhm @ 12A, 10V
  • Vgs(th) (Max) @ Id: 2.35V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 15V
  • Power - Max: 2.4W, 3.4W
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 18-PowerVQFN
  • Supplier Device Package: PQFN (5x6)
package: -
Request a Quote
Logic Level Gate
30V
13A, 28A
8.6mOhm @ 12A, 10V
2.35V @ 25µA
12nC @ 4.5V
1060pF @ 15V
2.4W, 3.4W
-
Surface Mount
18-PowerVQFN
PQFN (5x6)
SSM6L14FE-TE85L-F
Toshiba Semiconductor and Storage

MOSFET N/P-CH 20V 0.8A ES6

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate, 1.5V Drive
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 800mA (Ta), 720mA (Ta)
  • Rds On (Max) @ Id, Vgs: 240mOhm @ 500mA, 4.5V, 300mOhm @ 400mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V, 1.76nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 10V, 110pF @ 10V
  • Power - Max: 150mW (Ta)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6
package: -
Voorraad52.236
Logic Level Gate, 1.5V Drive
20V
800mA (Ta), 720mA (Ta)
240mOhm @ 500mA, 4.5V, 300mOhm @ 400mA, 4.5V
1V @ 1mA
2nC @ 4.5V, 1.76nC @ 4.5V
90pF @ 10V, 110pF @ 10V
150mW (Ta)
150°C
Surface Mount
SOT-563, SOT-666
ES6
BSC155N06NDATMA1
Infineon Technologies

MOSFET 2N-CH 60V 20A 8TDSON

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Rds On (Max) @ Id, Vgs: 15.5mOhm @ 17A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 20µA
  • Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 30V
  • Power - Max: 50W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PG-TDSON-8-4
package: -
Voorraad21.720
-
60V
20A (Tc)
15.5mOhm @ 17A, 10V
4V @ 20µA
29nC @ 10V
2250pF @ 30V
50W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerVDFN
PG-TDSON-8-4