Pagina 11 - Transistors - FET's, MOSFET's - Arrays | Discrete halfgeleiderproducten | Heisener Electronics
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Transistors - FET's, MOSFET's - Arrays

Archief 5.684
Pagina  11/203
Afbeelding
Onderdeelnummer
Fabrikant
Omschrijving
package
Voorraad
Aantal
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IRL6372PBF
Infineon Technologies

MOSFET 2N-CH 30V 8.1A 8SO

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8.1A
  • Rds On (Max) @ Id, Vgs: 17.9 mOhm @ 8.1A, 4.5V
  • Vgs(th) (Max) @ Id: 1.1V @ 10µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 25V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad3.840
Logic Level Gate
30V
8.1A
17.9 mOhm @ 8.1A, 4.5V
1.1V @ 10µA
11nC @ 4.5V
1020pF @ 25V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
BTS7904SAKSA1
Infineon Technologies

MOSFET N/P-CH 55V/30V 40A TO220

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 55V, 30V
  • Current - Continuous Drain (Id) @ 25°C: 40A
  • Rds On (Max) @ Id, Vgs: 12 mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 40µA
  • Gate Charge (Qg) (Max) @ Vgs: 123nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6100pF @ 25V
  • Power - Max: 69W, 96W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-220-5
  • Supplier Device Package: PG-TO220-5-13
package: TO-220-5
Voorraad2.224
Logic Level Gate
55V, 30V
40A
12 mOhm @ 20A, 10V
2.2V @ 40µA
123nC @ 10V
6100pF @ 25V
69W, 96W
-55°C ~ 150°C (TJ)
Surface Mount
TO-220-5
PG-TO220-5-13
PMDPB760ENX
WeEn Semiconductors

MOSFET AXIAL

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
Voorraad6.896
-
-
-
-
-
-
-
-
-
-
-
-
RJM0603JSC-00#13
Renesas Electronics America

MOSFET 3N/3P-CH 60V 20A HSOP

  • FET Type: 3 N and 3 P-Channel (3-Phase Bridge)
  • FET Feature: Logic Level Gate, 4.5V Drive
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 20A
  • Rds On (Max) @ Id, Vgs: 20 mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 10V
  • Power - Max: 54W
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Package / Case: 20-SOIC (0.433", 11.00mm Width) Exposed Pad
  • Supplier Device Package: 20-HSOP
package: 20-SOIC (0.433", 11.00mm Width) Exposed Pad
Voorraad5.280
Logic Level Gate, 4.5V Drive
60V
20A
20 mOhm @ 10A, 10V
2.5V @ 1mA
43nC @ 10V
2600pF @ 10V
54W
175°C
Surface Mount
20-SOIC (0.433", 11.00mm Width) Exposed Pad
20-HSOP
hot SQ9945AEY-T1-E3
Vishay Siliconix

MOSFET 2N-CH 60V 3.7A 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 3.7A
  • Rds On (Max) @ Id, Vgs: 80 mOhm @ 3.7A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 2.4W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad1.401.312
Logic Level Gate
60V
3.7A
80 mOhm @ 3.7A, 10V
3V @ 250µA
20nC @ 10V
-
2.4W
-55°C ~ 175°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot SI4563DY-T1-E3
Vishay Siliconix

MOSFET N/P-CH 40V 8A 8-SOIC

  • FET Type: N and P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 8A
  • Rds On (Max) @ Id, Vgs: 16 mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2390pF @ 20V
  • Power - Max: 3.25W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad133.716
Standard
40V
8A
16 mOhm @ 5A, 10V
2V @ 250µA
85nC @ 10V
2390pF @ 20V
3.25W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
APTM10HM09FT3G
Microsemi Corporation

MOSFET 4N-CH 100V 139A SP3

  • FET Type: 4 N-Channel (H-Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 139A
  • Rds On (Max) @ Id, Vgs: 10 mOhm @ 69.5A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 9875pF @ 25V
  • Power - Max: 390W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP3
  • Supplier Device Package: SP3
package: SP3
Voorraad4.032
Standard
100V
139A
10 mOhm @ 69.5A, 10V
4V @ 2.5mA
350nC @ 10V
9875pF @ 25V
390W
-40°C ~ 150°C (TJ)
Chassis Mount
SP3
SP3
DMT3011LDT-7
Diodes Incorporated

MOSFET 2N-CH 30V 8A V-DFN3030-8

  • FET Type: 2 N-Channel (Dual) Asymmetrical
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8A, 10.7A
  • Rds On (Max) @ Id, Vgs: 20 mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 641pF @ 15V
  • Power - Max: 1.9W
  • Operating Temperature: -55°C ~ 155°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-VDFN Exposed Pad
  • Supplier Device Package: V-DFN3030-8 (Type K)
package: 8-VDFN Exposed Pad
Voorraad6.592
Standard
30V
8A, 10.7A
20 mOhm @ 6A, 10V
3V @ 250µA
13.2nC @ 10V
641pF @ 15V
1.9W
-55°C ~ 155°C (TJ)
Surface Mount
8-VDFN Exposed Pad
V-DFN3030-8 (Type K)
DMC3021LSDQ-13
Diodes Incorporated

MOSFET N/P-CH 30V 8.5A/7A 8-SO

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8.5A, 7A
  • Rds On (Max) @ Id, Vgs: 21 mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16.1nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 767pF @ 10V
  • Power - Max: 2.5W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad3.472
Logic Level Gate
30V
8.5A, 7A
21 mOhm @ 7A, 10V
2.1V @ 250µA
16.1nC @ 10V
767pF @ 10V
2.5W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot SIA907EDJT-T1-GE3
Vishay Siliconix

MOSFET 2P-CH 20V 4.5A SC-70-6L

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
  • Rds On (Max) @ Id, Vgs: 57 mOhm @ 3.6A, 4.5V
  • Vgs(th) (Max) @ Id: 1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 7.8W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? SC-70-6 Dual
  • Supplier Device Package: PowerPAK? SC-70-6 Dual
package: PowerPAK? SC-70-6 Dual
Voorraad146.412
Logic Level Gate
20V
4.5A (Tc)
57 mOhm @ 3.6A, 4.5V
1.4V @ 250µA
23nC @ 10V
-
7.8W
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SC-70-6 Dual
PowerPAK? SC-70-6 Dual
hot FDG6321C
Fairchild/ON Semiconductor

MOSFET N/P-CH 25V SC70-6

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 500mA, 410mA
  • Rds On (Max) @ Id, Vgs: 450 mOhm @ 500mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
  • Power - Max: 300mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-70-6
package: 6-TSSOP, SC-88, SOT-363
Voorraad1.107.624
Logic Level Gate
25V
500mA, 410mA
450 mOhm @ 500mA, 4.5V
1.5V @ 250µA
2.3nC @ 4.5V
50pF @ 10V
300mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-70-6
SLA5086
Sanken

MOSFET 5P-CH 60V 5A 12-SIP

  • FET Type: 5 P-Channel, Common Source
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 5A
  • Rds On (Max) @ Id, Vgs: 220 mOhm @ 3A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 10V
  • Power - Max: 5W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 12-SIP, Exposed Tab
  • Supplier Device Package: 12-SIP
package: 12-SIP, Exposed Tab
Voorraad18.804
Logic Level Gate
60V
5A
220 mOhm @ 3A, 10V
2V @ 250µA
-
790pF @ 10V
5W
150°C (TJ)
Through Hole
12-SIP, Exposed Tab
12-SIP
DMP2040UND-13
Diodes Incorporated

MOSFET 2P-CH 20V 5.3A PWRDI3333

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta), 13.6A (Tc)
  • Rds On (Max) @ Id, Vgs: 36mOhm @ 8.9A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 834pF @ 10V
  • Power - Max: 900mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PowerDI3333-8 (Type UXB)
package: -
Request a Quote
-
20V
5.3A (Ta), 13.6A (Tc)
36mOhm @ 8.9A, 4.5V
1.5V @ 250µA
20nC @ 10V
834pF @ 10V
900mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerVDFN
PowerDI3333-8 (Type UXB)
UPA2451CTL-E1-A
Renesas Electronics Corporation

MOSFET 2N-CH 30V 8.2A 6HWSON

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8.2A
  • Rds On (Max) @ Id, Vgs: 20mOhm @ 4A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 4V
  • Input Capacitance (Ciss) (Max) @ Vds: 605pF @ 10V
  • Power - Max: 700mW
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 6-VFDFN Exposed Pad
  • Supplier Device Package: 6-HWSON
package: -
Request a Quote
Logic Level Gate
30V
8.2A
20mOhm @ 4A, 4.5V
1.5V @ 1mA
6.3nC @ 4V
605pF @ 10V
700mW
-
Surface Mount
6-VFDFN Exposed Pad
6-HWSON
NTMC083NP10M5L
onsemi

MOSFET N/P-CH 100V 2.9A 8SOIC

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), 4.1A (Tc), 2.4A (Ta), 3.3A (Tc)
  • Rds On (Max) @ Id, Vgs: 83mOhm @ 1.5A, 10V, 131mOhm @ 1.5A, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V, 8.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 222pF @ 50V, 525pF @ 50V
  • Power - Max: 1.6W (Ta), 3.1W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
package: -
Voorraad13.215
-
100V
2.9A (Ta), 4.1A (Tc), 2.4A (Ta), 3.3A (Tc)
83mOhm @ 1.5A, 10V, 131mOhm @ 1.5A, 10V
-
5nC @ 10V, 8.4nC @ 10V
222pF @ 50V, 525pF @ 50V
1.6W (Ta), 3.1W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
DMN31D5UDA-7B
Diodes Incorporated

MOSFET 2N-CH 0.4A 6DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
  • Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, No Lead
  • Supplier Device Package: X2-DFN0806-6
package: -
Voorraad23.988
-
-
400mA (Ta)
1.5Ohm @ 100mA, 4.5V
1V @ 250µA
-
-
-
-55°C ~ 150°C (TJ)
Surface Mount
6-SMD, No Lead
X2-DFN0806-6
DMG6302UDW-13
Diodes Incorporated

MOSFET 2P-CH 25V 0.15A SOT363

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 150mA (Ta)
  • Rds On (Max) @ Id, Vgs: 10Ohm @ 140mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.34nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 30.7pF @ 10V
  • Power - Max: 310mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
package: -
Request a Quote
-
25V
150mA (Ta)
10Ohm @ 140mA, 4.5V
1.5V @ 250µA
0.34nC @ 4.5V
30.7pF @ 10V
310mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
BSS138BKSH
Nexperia USA Inc.

MOSFET 2N-CH 60V 0.32A 6TSSOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)
  • Rds On (Max) @ Id, Vgs: 1.6Ohm @ 320mA, 10V
  • Vgs(th) (Max) @ Id: 1.6V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 56pF @ 10V
  • Power - Max: 445mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: 6-TSSOP
package: -
Voorraad3.843
Logic Level Gate
60V
320mA (Ta)
1.6Ohm @ 320mA, 10V
1.6V @ 250µA
0.7nC @ 4.5V
56pF @ 10V
445mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
6-TSSOP
FDS6986S
Fairchild Semiconductor

MOSFET 2N-CH 30V 6.5A/7.9A 8SOIC

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6.5A, 7.9A
  • Rds On (Max) @ Id, Vgs: 29mOhm @ 6.5A, 10V, 20mOhm @ 7.9A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA, 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 9nC @ 5V, 16nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 695pF @ 10V, 1233pF @ 10V
  • Power - Max: 900mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
package: -
Request a Quote
Logic Level Gate
30V
6.5A, 7.9A
29mOhm @ 6.5A, 10V, 20mOhm @ 7.9A, 10V
3V @ 250µA, 3V @ 1mA
9nC @ 5V, 16nC @ 5V
695pF @ 10V, 1233pF @ 10V
900mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
DMC62D2SVQ-7
Diodes Incorporated

MOSFET BVDSS: 41V~60V SOT563 T&R

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 480mA (Ta), 320mA (Ta)
  • Rds On (Max) @ Id, Vgs: 1.7Ohm @ 200mA, 10V, 4Ohm @ 200mA, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA, 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.04nC @ 10V, 1.1nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V, 40pF @ 25V
  • Power - Max: 500mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
package: -
Request a Quote
-
60V
480mA (Ta), 320mA (Ta)
1.7Ohm @ 200mA, 10V, 4Ohm @ 200mA, 10V
2.5V @ 250µA, 3V @ 250µA
1.04nC @ 10V, 1.1nC @ 10V
41pF @ 30V, 40pF @ 25V
500mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
CMLDM3737-TR-PBFREE
Central Semiconductor Corp

MOSFET 2N-CH 20V 0.54A SOT563

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 540mA
  • Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.58nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V
  • Power - Max: 350mW
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
package: -
Voorraad54.591
Logic Level Gate
20V
540mA
550mOhm @ 540mA, 4.5V
1V @ 250µA
1.58nC @ 4.5V
150pF @ 16V
350mW
-65°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
FF23MR12W1M1PB11BPSA1
Infineon Technologies

MOSFET 2 IND 1200V 50A EASY1BM

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 50A
  • Rds On (Max) @ Id, Vgs: 22.5mOhm @ 50A, 15V
  • Vgs(th) (Max) @ Id: 5.5V @ 20mA
  • Gate Charge (Qg) (Max) @ Vgs: 124nC @ 15V
  • Input Capacitance (Ciss) (Max) @ Vds: 3680pF @ 800V
  • Power - Max: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: AG-EASY1BM-2
package: -
Request a Quote
-
1200V (1.2kV)
50A
22.5mOhm @ 50A, 15V
5.5V @ 20mA
124nC @ 15V
3680pF @ 800V
-
-40°C ~ 150°C (TJ)
Chassis Mount
Module
AG-EASY1BM-2
SP8K22HZGTB
Rohm Semiconductor

MOSFET 2N-CH 45V 4.5A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 45V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 46mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V
  • Power - Max: 1.4W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
package: -
Voorraad7.260
-
45V
4.5A (Ta)
46mOhm @ 4.5A, 10V
2.5V @ 1mA
9.6nC @ 5V
550pF @ 10V
1.4W (Ta)
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
SP8K22FRATB
Rohm Semiconductor

MOSFET 2N-CH 45V 4.5A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 45V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 46mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V
  • Power - Max: 2W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
package: -
Request a Quote
-
45V
4.5A (Ta)
46mOhm @ 4.5A, 10V
2.5V @ 1mA
9.6nC @ 5V
550pF @ 10V
2W
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
DMP31D7LDWQ-13
Diodes Incorporated

MOSFET 2P-CH 30V 0.55A SOT363

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 550mA (Ta)
  • Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V
  • Vgs(th) (Max) @ Id: 2.6V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 19pF @ 15V
  • Power - Max: 290mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
package: -
Request a Quote
-
30V
550mA (Ta)
900mOhm @ 420mA, 10V
2.6V @ 250µA
0.8nC @ 10V
19pF @ 15V
290mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
DMC2710UDW-13
Diodes Incorporated

MOSFET N/P-CH 20V 0.75A SOT363

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 750mA (Ta), 600mA (Ta)
  • Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V, 750mOhm @ 430mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, 49pF @ 16V
  • Power - Max: 290mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
package: -
Request a Quote
-
20V
750mA (Ta), 600mA (Ta)
450mOhm @ 600mA, 4.5V, 750mOhm @ 430mA, 4.5V
1V @ 250µA
0.6nC @ 4.5V, 0.7nC @ 4.5V
42pF @ 16V, 49pF @ 16V
290mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
DMN62D2UVT-13
Diodes Incorporated

MOSFET BVDSS: 41V~60V TSOT26 T&R

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 455mA (Ta)
  • Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V
  • Power - Max: 500mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: TSOT-26
package: -
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-
60V
455mA (Ta)
2Ohm @ 50mA, 5V
1V @ 250µA
0.8nC @ 4.5V
41pF @ 30V
500mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
TSOT-26
NVLUD4C26NTAG
onsemi

MOSFET

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta)
  • Rds On (Max) @ Id, Vgs: 21mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 1.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 15V
  • Power - Max: 720mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: 6-UDFN (2x2)
package: -
Request a Quote
-
30V
4.8A (Ta)
21mOhm @ 6A, 10V
1.1V @ 250µA
9nC @ 4.5V
460pF @ 15V
720mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
6-UDFN (2x2)