Pagina 67 - Transistors - FET's, MOSFET's - Arrays | Discrete halfgeleiderproducten | Heisener Electronics
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Transistors - FET's, MOSFET's - Arrays

Archief 5.684
Pagina  67/203
Afbeelding
Onderdeelnummer
Fabrikant
Omschrijving
package
Voorraad
Aantal
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
BSD235N L6327
Infineon Technologies

MOSFET 2N-CH 20V 0.95A SOT363

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 950mA
  • Rds On (Max) @ Id, Vgs: 350 mOhm @ 950mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 1.6µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.32nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 63pF @ 10V
  • Power - Max: 500mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-VSSOP, SC-88, SOT-363
  • Supplier Device Package: PG-SOT363-6
package: 6-VSSOP, SC-88, SOT-363
Voorraad6.672
Logic Level Gate
20V
950mA
350 mOhm @ 950mA, 4.5V
1.2V @ 1.6µA
0.32nC @ 4.5V
63pF @ 10V
500mW
-55°C ~ 150°C (TJ)
Surface Mount
6-VSSOP, SC-88, SOT-363
PG-SOT363-6
hot PMDPB70EN,115
Nexperia USA Inc.

MOSFET 2N-CH 30V 3.5A 6DFN

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A
  • Rds On (Max) @ Id, Vgs: 57 mOhm @ 3.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 130pF @ 15V
  • Power - Max: 510mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: DFN2020-6
package: 6-UDFN Exposed Pad
Voorraad174.000
Logic Level Gate
30V
3.5A
57 mOhm @ 3.5A, 10V
2.5V @ 250µA
4.5nC @ 10V
130pF @ 15V
510mW
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
DFN2020-6
SSM6L11TU(TE85L,F)
Toshiba Semiconductor and Storage

MOSFET N/P-CH 20V 0.5A UF6 S

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 500mA
  • Rds On (Max) @ Id, Vgs: 145 mOhm @ 250MA, 4V
  • Vgs(th) (Max) @ Id: 1.1V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 268pF @ 10V
  • Power - Max: 500mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, Flat Leads
  • Supplier Device Package: UF6
package: 6-SMD, Flat Leads
Voorraad3.456
Logic Level Gate
20V
500mA
145 mOhm @ 250MA, 4V
1.1V @ 100µA
-
268pF @ 10V
500mW
150°C (TJ)
Surface Mount
6-SMD, Flat Leads
UF6
MCH6663-TL-H
ON Semiconductor

MOSFET N/P-CH 30V 1.8/1.5A MCPH6

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 1.8A, 1.5A
  • Rds On (Max) @ Id, Vgs: 188 mOhm @ 900mA, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 88pF @ 10V
  • Power - Max: 800mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, Flat Leads
  • Supplier Device Package: 6-MCPH
package: 6-SMD, Flat Leads
Voorraad3.264
Logic Level Gate
30V
1.8A, 1.5A
188 mOhm @ 900mA, 10V
-
2nC @ 10V
88pF @ 10V
800mW
-55°C ~ 150°C (TJ)
Surface Mount
6-SMD, Flat Leads
6-MCPH
SI9926BDY-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 20V 6.2A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 6.2A
  • Rds On (Max) @ Id, Vgs: 20 mOhm @ 8.2A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.14W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad3.600
Logic Level Gate
20V
6.2A
20 mOhm @ 8.2A, 4.5V
1.5V @ 250µA
20nC @ 4.5V
-
1.14W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot SI7842DP-T1-E3
Vishay Siliconix

MOSFET 2N-CH 30V 6.3A PPAK SO-8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6.3A
  • Rds On (Max) @ Id, Vgs: 22 mOhm @ 7.5A, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.4W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? SO-8 Dual
  • Supplier Device Package: PowerPAK? SO-8 Dual
package: PowerPAK? SO-8 Dual
Voorraad1.159.212
Logic Level Gate
30V
6.3A
22 mOhm @ 7.5A, 10V
2.4V @ 250µA
20nC @ 10V
-
1.4W
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SO-8 Dual
PowerPAK? SO-8 Dual
hot IRFH7911TRPBF
Infineon Technologies

MOSFET 2N-CH 30V 13A/28A PQFN

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 13A, 28A
  • Rds On (Max) @ Id, Vgs: 8.6 mOhm @ 12A, 10V
  • Vgs(th) (Max) @ Id: 2.35V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 15V
  • Power - Max: 2.4W, 3.4W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 18-PowerVQFN
  • Supplier Device Package: PQFN (5x6)
package: 18-PowerVQFN
Voorraad115.224
Logic Level Gate
30V
13A, 28A
8.6 mOhm @ 12A, 10V
2.35V @ 25µA
12nC @ 4.5V
1060pF @ 15V
2.4W, 3.4W
-55°C ~ 150°C (TJ)
Surface Mount
18-PowerVQFN
PQFN (5x6)
hot IRF7380PBF
Infineon Technologies

MOSFET 2N-CH 80V 3.6A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 3.6A
  • Rds On (Max) @ Id, Vgs: 73 mOhm @ 2.2A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 25V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad5.888
Logic Level Gate
80V
3.6A
73 mOhm @ 2.2A, 10V
4V @ 250µA
23nC @ 10V
660pF @ 25V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
HCT802TXV
TT Electronics/Optek Technology

MOSFET N/P-CH 90V 2A/1.1A SMD

  • FET Type: N and P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 90V
  • Current - Continuous Drain (Id) @ 25°C: 2A, 1.1A
  • Rds On (Max) @ Id, Vgs: 5 Ohm @ 1A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 25V
  • Power - Max: 500mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, No Lead
  • Supplier Device Package: 6-SMD
package: 6-SMD, No Lead
Voorraad7.216
Standard
90V
2A, 1.1A
5 Ohm @ 1A, 10V
2.5V @ 1mA
-
70pF @ 25V
500mW
-55°C ~ 150°C (TJ)
Surface Mount
6-SMD, No Lead
6-SMD
HTMN5130SSD-13
Diodes Incorporated

MOSFET 2N-CH 55V 2.6A 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 2.6A
  • Rds On (Max) @ Id, Vgs: 130 mOhm @ 3A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 218.7pF @ 25V
  • Power - Max: 1.7W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad3.312
Standard
55V
2.6A
130 mOhm @ 3A, 10V
3V @ 250µA
8.9nC @ 10V
218.7pF @ 25V
1.7W
-55°C ~ 175°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot NTJD5121NT1G
ON Semiconductor

MOSFET 2N-CH 60V 0.295A SOT363

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 295mA
  • Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 26pF @ 20V
  • Power - Max: 250mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-88/SC70-6/SOT-363
package: 6-TSSOP, SC-88, SOT-363
Voorraad2.930.520
Logic Level Gate
60V
295mA
1.6 Ohm @ 500mA, 10V
2.5V @ 250µA
0.9nC @ 4.5V
26pF @ 20V
250mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-88/SC70-6/SOT-363
ALD114913SAL
Advanced Linear Devices Inc.

MOSFET 2N-CH 10.6V 8SOIC

  • FET Type: 2 N-Channel (Dual) Matched Pair
  • FET Feature: Depletion Mode
  • Drain to Source Voltage (Vdss): 10.6V
  • Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
  • Rds On (Max) @ Id, Vgs: 500 Ohm @ 2.7V
  • Vgs(th) (Max) @ Id: 1.26V @ 1µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
  • Power - Max: 500mW
  • Operating Temperature: 0°C ~ 70°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad6.504
Depletion Mode
10.6V
12mA, 3mA
500 Ohm @ 2.7V
1.26V @ 1µA
-
2.5pF @ 5V
500mW
0°C ~ 70°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
FDMD8240LET40
Fairchild/ON Semiconductor

MOSFET 2N-CH 40V 24A POWER3.3X5

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 24A
  • Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 23A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4230pF @ 20V
  • Power - Max: 50W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 12-PowerWDFN
  • Supplier Device Package: 12-Power3.3x5
package: 12-PowerWDFN
Voorraad3.376
Standard
40V
24A
2.6 mOhm @ 23A, 10V
3V @ 250µA
56nC @ 10V
4230pF @ 20V
50W
-55°C ~ 175°C (TJ)
Surface Mount
12-PowerWDFN
12-Power3.3x5
FDMS3600S
Fairchild/ON Semiconductor

MOSFET 2N-CH 25V 15A/30A 8-PQFN

  • FET Type: 2 N-Channel (Dual) Asymmetrical
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 15A, 30A
  • Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 2.7V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 13V
  • Power - Max: 1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: Power56
package: 8-PowerTDFN
Voorraad24.498
Logic Level Gate
25V
15A, 30A
5.6 mOhm @ 15A, 10V
2.7V @ 250µA
27nC @ 10V
1680pF @ 13V
1W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerTDFN
Power56
hot QS6K1TR
Rohm Semiconductor

MOSFET 2N-CH 30V 1A TSMT6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 1A
  • Rds On (Max) @ Id, Vgs: 238 mOhm @ 1A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 2.4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 77pF @ 10V
  • Power - Max: 1.25W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: TSMT6 (SC-95)
package: SOT-23-6 Thin, TSOT-23-6
Voorraad578.508
Logic Level Gate
30V
1A
238 mOhm @ 1A, 4.5V
1.5V @ 1mA
2.4nC @ 4.5V
77pF @ 10V
1.25W
150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
TSMT6 (SC-95)
NVMJD2D7N04CLTWG
onsemi

MOSFET N-CH 40V LFPAK56

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
MCQD08P04-TP
Micro Commercial Co

MOSFET

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 8A
  • Rds On (Max) @ Id, Vgs: 50mOhm @ 4.3A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 23.98nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1045pF @ 30V
  • Power - Max: 2.4W
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
package: -
Request a Quote
-
40V
8A
50mOhm @ 4.3A, 10V
2.5V @ 250µA
23.98nC @ 10V
1045pF @ 30V
2.4W
-55°C ~ 150°C
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
MSCSM170DUM15T3AG
Microchip Technology

SIC 2N-CH 1700V 181A SP3F

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1700V (1.7kV)
  • Current - Continuous Drain (Id) @ 25°C: 181A (Tc)
  • Rds On (Max) @ Id, Vgs: 15mOhm @ 90A, 20V
  • Vgs(th) (Max) @ Id: 3.2V @ 7.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 534nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 9900pF @ 1000V
  • Power - Max: 862W (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: SP3F
package: -
Voorraad15
-
1700V (1.7kV)
181A (Tc)
15mOhm @ 90A, 20V
3.2V @ 7.5mA
534nC @ 20V
9900pF @ 1000V
862W (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
SP3F
DMN601DWKQ-7
Diodes Incorporated

MOSFET 2N-CH 60V 0.305A SOT363

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 305mA (Ta)
  • Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 0.304nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
  • Power - Max: 200mW
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
package: -
Voorraad194.640
-
60V
305mA (Ta)
2Ohm @ 500mA, 10V
2.5V @ 1mA
0.304nC @ 4.5V
50pF @ 25V
200mW
-65°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
NVMFD5C672NLT1G
onsemi

MOSFET 2N-CH 60V 12A/49A 8DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 49A (Tc)
  • Rds On (Max) @ Id, Vgs: 11.9mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 30µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 793pF @ 25V
  • Power - Max: 3.1W (Ta), 45W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
package: -
Request a Quote
-
60V
12A (Ta), 49A (Tc)
11.9mOhm @ 10A, 10V
2.2V @ 30µA
5.7nC @ 4.5V
793pF @ 25V
3.1W (Ta), 45W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerTDFN
8-DFN (5x6) Dual Flag (SO8FL-Dual)
AOCA32301
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 9A 4ALPHADFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
  • Rds On (Max) @ Id, Vgs: 18mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id: 1.9V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 24.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.9W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, No Lead
  • Supplier Device Package: 4-AlphaDFN (1.9x1.3)
package: -
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-
30V
9A (Ta)
18mOhm @ 4A, 10V
1.9V @ 250µA
24.5nC @ 10V
-
1.9W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD, No Lead
4-AlphaDFN (1.9x1.3)
IRF7501TR
Infineon Technologies

MOSFET 2N-CH 20V 2.4A MICRO8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.4A
  • Rds On (Max) @ Id, Vgs: 135mOhm @ 1.7A, 4.5V
  • Vgs(th) (Max) @ Id: 700mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 15V
  • Power - Max: 1.25W
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
  • Supplier Device Package: Micro8™
package: -
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Logic Level Gate
20V
2.4A
135mOhm @ 1.7A, 4.5V
700mV @ 250µA
8nC @ 4.5V
260pF @ 15V
1.25W
-
Surface Mount
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Micro8™
SSM5N16FU-LF
Toshiba Semiconductor and Storage

MOSFET 2N-CH 20V 0.1A USV

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
  • Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
  • Vgs(th) (Max) @ Id: 1.1V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 9.3pF @ 3V
  • Power - Max: 200mW (Ta)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 5-TSSOP, SC-70-5, SOT-353
  • Supplier Device Package: USV
package: -
Voorraad9.000
-
20V
100mA (Ta)
3Ohm @ 10mA, 4V
1.1V @ 100µA
-
9.3pF @ 3V
200mW (Ta)
150°C
Surface Mount
5-TSSOP, SC-70-5, SOT-353
USV
DMN2016UFX-7
Diodes Incorporated

MOSFET 2N-CH 24V 9.9A 4VDFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 24V
  • Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta)
  • Rds On (Max) @ Id, Vgs: 15mOhm @ 6.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 10V
  • Power - Max: 1.07W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-VFDFN Exposed Pad
  • Supplier Device Package: V-DFN2050-4
package: -
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-
24V
9.9A (Ta)
15mOhm @ 6.5A, 4.5V
1.5V @ 250µA
14nC @ 4.5V
950pF @ 10V
1.07W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
4-VFDFN Exposed Pad
V-DFN2050-4
SSF2215
Good-Ark Semiconductor

MOSFET 2P-CH 20V 3A SOT23-6

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
  • Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 15V
  • Power - Max: 1.25W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: SOT-23-6L
package: -
Voorraad17.775
-
20V
3A (Ta)
85mOhm @ 3A, 4.5V
1V @ 250µA
8nC @ 4.5V
510pF @ 15V
1.25W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6
SOT-23-6L
DMT4014LDV-13
Diodes Incorporated

MOSFET 2N-CH 40V 8.5A PWRDI3333

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 26.5A (Tc)
  • Rds On (Max) @ Id, Vgs: 19mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 20V
  • Power - Max: 1W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PowerDI3333-8 (Type UXC)
package: -
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-
40V
8.5A (Ta), 26.5A (Tc)
19mOhm @ 20A, 10V
3V @ 250µA
11.2nC @ 10V
750pF @ 20V
1W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerVDFN
PowerDI3333-8 (Type UXC)
EM6J1T2CR
Rohm Semiconductor

MOSFET 2P-CH 20V EMT6

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
SI1922EDH-T1-BE3
Vishay Siliconix

MOSFET 2N-CH 20V 1.3A SC70-6

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta), 1.3A (Tc)
  • Rds On (Max) @ Id, Vgs: 198mOhm @ 1A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 740mW (Ta), 1.25W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-70-6
package: -
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-
20V
1.3A (Ta), 1.3A (Tc)
198mOhm @ 1A, 4.5V
1V @ 250µA
2.5nC @ 8V
-
740mW (Ta), 1.25W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-70-6