Pagina 66 - Transistors - FET's, MOSFET's - Arrays | Discrete halfgeleiderproducten | Heisener Electronics
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Transistors - FET's, MOSFET's - Arrays

Archief 5.684
Pagina  66/203
Afbeelding
Onderdeelnummer
Fabrikant
Omschrijving
package
Voorraad
Aantal
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
BSL308PEL6327HTSA1
Infineon Technologies

MOSFET 2P-CH 30V 2A 6TSOP

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2A
  • Rds On (Max) @ Id, Vgs: 80 mOhm @ 2A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 11µA
  • Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V
  • Power - Max: 500mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: PG-TSOP6-6
package: SOT-23-6 Thin, TSOT-23-6
Voorraad3.424
Logic Level Gate
30V
2A
80 mOhm @ 2A, 10V
1V @ 11µA
5nC @ 10V
500pF @ 15V
500mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
PG-TSOP6-6
hot NTMD6N04R2G
ON Semiconductor

MOSFET 2N-CH 40V 4.6A 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 4.6A
  • Rds On (Max) @ Id, Vgs: 34 mOhm @ 5.8A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 32V
  • Power - Max: 1.29W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad377.568
Logic Level Gate
40V
4.6A
34 mOhm @ 5.8A, 10V
3V @ 250µA
30nC @ 10V
900pF @ 32V
1.29W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
hot SI7940DP-T1-E3
Vishay Siliconix

MOSFET 2N-CH 12V 7.6A PPAK SO-8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 7.6A
  • Rds On (Max) @ Id, Vgs: 17 mOhm @ 11.8A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.4W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? SO-8 Dual
  • Supplier Device Package: PowerPAK? SO-8 Dual
package: PowerPAK? SO-8 Dual
Voorraad20.436
Logic Level Gate
12V
7.6A
17 mOhm @ 11.8A, 4.5V
1.5V @ 250µA
17nC @ 4.5V
-
1.4W
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SO-8 Dual
PowerPAK? SO-8 Dual
SI1029X-T1-E3
Vishay Siliconix

MOSFET N/P-CH 60V SOT563F

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 305mA, 190mA
  • Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V
  • Power - Max: 250mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SC-89-6
package: SOT-563, SOT-666
Voorraad2.064
Logic Level Gate
60V
305mA, 190mA
1.4 Ohm @ 500mA, 10V
2.5V @ 250µA
0.75nC @ 4.5V
30pF @ 25V
250mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SC-89-6
hot FDJ1027P
Fairchild/ON Semiconductor

MOSFET 2P-CH 20V 2.8A SC-75

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.8A
  • Rds On (Max) @ Id, Vgs: 160 mOhm @ 2.8A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 10V
  • Power - Max: 900mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC75-6 FLMP
  • Supplier Device Package: SC75-6 FLMP
package: SC75-6 FLMP
Voorraad204.432
Logic Level Gate
20V
2.8A
160 mOhm @ 2.8A, 4.5V
1.5V @ 250µA
4nC @ 4.5V
290pF @ 10V
900mW
-55°C ~ 150°C (TJ)
Surface Mount
SC75-6 FLMP
SC75-6 FLMP
SP8M5TB
Rohm Semiconductor

MOSFET N/P-CH 30V 6A/7A 8SOIC

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6A, 7A
  • Rds On (Max) @ Id, Vgs: 30 mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V
  • Power - Max: 2W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad6.080
Logic Level Gate
30V
6A, 7A
30 mOhm @ 6A, 10V
2.5V @ 1mA
7.2nC @ 5V
520pF @ 10V
2W
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
APTM60A11FT1G
Microsemi Corporation

MOSFET 2N-CH 600V 40A SP1

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 40A
  • Rds On (Max) @ Id, Vgs: 132 mOhm @ 33A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 330nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 10552pF @ 25V
  • Power - Max: 390W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP1
  • Supplier Device Package: SP1
package: SP1
Voorraad6.448
Standard
600V
40A
132 mOhm @ 33A, 10V
5V @ 2.5mA
330nC @ 10V
10552pF @ 25V
390W
-40°C ~ 150°C (TJ)
Chassis Mount
SP1
SP1
hot IXTL2X180N10T
IXYS

MOSFET 2N-CH 100V 100A I5-PAK

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 100A
  • Rds On (Max) @ Id, Vgs: 7.4 mOhm @ 50A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 151nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 25V
  • Power - Max: 150W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: ISOPLUSi5-Pak?
  • Supplier Device Package: ISOPLUSi5-Pak?
package: ISOPLUSi5-Pak?
Voorraad6.160
Standard
100V
100A
7.4 mOhm @ 50A, 10V
4.5V @ 250µA
151nC @ 10V
6900pF @ 25V
150W
-55°C ~ 175°C (TJ)
Through Hole
ISOPLUSi5-Pak?
ISOPLUSi5-Pak?
ALD1101BSAL
Advanced Linear Devices Inc.

MOSFET 2N-CH 10.6V 8SOIC

  • FET Type: 2 N-Channel (Dual) Matched Pair
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 10.6V
  • Current - Continuous Drain (Id) @ 25°C: 40mA
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 500mW
  • Operating Temperature: 0°C ~ 70°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad3.376
Standard
10.6V
40mA
-
-
-
-
500mW
0°C ~ 70°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
ALD114804PCL
Advanced Linear Devices Inc.

MOSFET 4N-CH 10.6V 16DIP

  • FET Type: 4 N-Channel, Matched Pair
  • FET Feature: Depletion Mode
  • Drain to Source Voltage (Vdss): 10.6V
  • Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
  • Rds On (Max) @ Id, Vgs: 500 Ohm @ 3.6V
  • Vgs(th) (Max) @ Id: 360mV @ 1µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
  • Power - Max: 500mW
  • Operating Temperature: 0°C ~ 70°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 16-DIP (0.300", 7.62mm)
  • Supplier Device Package: 16-PDIP
package: 16-DIP (0.300", 7.62mm)
Voorraad6.160
Depletion Mode
10.6V
12mA, 3mA
500 Ohm @ 3.6V
360mV @ 1µA
-
2.5pF @ 5V
500mW
0°C ~ 70°C (TJ)
Through Hole
16-DIP (0.300", 7.62mm)
16-PDIP
hot NTJD4001NT1G
ON Semiconductor

MOSFET 2N-CH 30V 0.25A SOT-363

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 250mA
  • Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 10mA, 4V
  • Vgs(th) (Max) @ Id: 1.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 33pF @ 5V
  • Power - Max: 272mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-88/SC70-6/SOT-363
package: 6-TSSOP, SC-88, SOT-363
Voorraad3.137.352
Standard
30V
250mA
1.5 Ohm @ 10mA, 4V
1.5V @ 100µA
1.3nC @ 5V
33pF @ 5V
272mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-88/SC70-6/SOT-363
hot DMN4026SSDQ-13
Diodes Incorporated

MOSFET 2N-CH 40V 7A 8SO

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 7A
  • Rds On (Max) @ Id, Vgs: 24 mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 19.1nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 20V
  • Power - Max: 1.3W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad16.236
Logic Level Gate
40V
7A
24 mOhm @ 6A, 10V
3V @ 250µA
19.1nC @ 10V
1060pF @ 20V
1.3W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
ALD1116PAL
Advanced Linear Devices Inc.

MOSFET 2N-CH 10.6V 8DIP

  • FET Type: 2 N-Channel (Dual) Matched Pair
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 10.6V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 500 Ohm @ 5V
  • Vgs(th) (Max) @ Id: 1V @ 1µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V
  • Power - Max: 500mW
  • Operating Temperature: 0°C ~ 70°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-PDIP
package: 8-DIP (0.300", 7.62mm)
Voorraad17.532
Standard
10.6V
-
500 Ohm @ 5V
1V @ 1µA
-
3pF @ 5V
500mW
0°C ~ 70°C (TJ)
Through Hole
8-DIP (0.300", 7.62mm)
8-PDIP
QH8KA3TCR
Rohm Semiconductor

MOSFET 2N-CH 30V 9A TSMT8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
  • Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 15V
  • Power - Max: 1.5W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: TSMT8
package: -
Voorraad8.760
-
30V
9A (Ta)
16mOhm @ 9A, 10V
2.5V @ 1mA
15.5nC @ 10V
640pF @ 15V
1.5W (Ta)
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
TSMT8
IAUC60N04S6N031HATMA1
Infineon Technologies

MOSFET 2N-CH 40V 60A 8TDSON

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tj)
  • Rds On (Max) @ Id, Vgs: 3.1mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1922pF @ 25V
  • Power - Max: 75W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PG-TDSON-8-56
package: -
Voorraad28.929
-
40V
60A (Tj)
3.1mOhm @ 30A, 10V
3V @ 25µA
30nC @ 10V
1922pF @ 25V
75W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerVDFN
PG-TDSON-8-56
AOCA32112E
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 20V 4.5A 4ALPHADFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 48mOhm @ 3A, 4.5V
  • Vgs(th) (Max) @ Id: 1.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.1W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, No Lead
  • Supplier Device Package: 4-AlphaDFN (0.97x0.97)
package: -
Request a Quote
-
20V
4.5A (Ta)
48mOhm @ 3A, 4.5V
1.3V @ 250µA
11.5nC @ 4.5V
-
1.1W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD, No Lead
4-AlphaDFN (0.97x0.97)
AONH36328
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 13.8A/18A 8DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 13.8A (Ta), 18A (Tc)
  • Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 15V
  • Power - Max: 2.5W (Ta), 23W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WDFN Exposed Pad
  • Supplier Device Package: 8-DFN-EP (3x3)
package: -
Request a Quote
-
30V
13.8A (Ta), 18A (Tc)
8.5mOhm @ 20A, 10V
2.1V @ 250µA
20nC @ 10V
700pF @ 15V
2.5W (Ta), 23W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-WDFN Exposed Pad
8-DFN-EP (3x3)
AON2803G
Alpha & Omega Semiconductor Inc.

MOSFET P-CH DUAL

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
CWDM305PD-TR13-PBFREE
Central Semiconductor Corp

MOSFET 2P-CH 30V 5.3A 8SOIC

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5.3A
  • Rds On (Max) @ Id, Vgs: 72mOhm @ 2.7A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 10V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
package: -
Request a Quote
-
30V
5.3A
72mOhm @ 2.7A, 10V
3V @ 250µA
7nC @ 5V
590pF @ 10V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
PJX138K_R1_00001
Panjit International Inc.

MOSFET 2N-CH 50V 0.35A SOT563

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
  • Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
  • Power - Max: 223mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
package: -
Voorraad75.456
-
50V
350mA (Ta)
1.6Ohm @ 500mA, 10V
1.5V @ 250µA
1nC @ 4.5V
50pF @ 25V
223mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
PJT7802_R1_00001
Panjit International Inc.

MOSFET 2N-CH 20V 0.5A SOT363

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
  • Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 10V
  • Power - Max: 350mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
package: -
Voorraad8.100
-
20V
500mA (Ta)
400mOhm @ 500mA, 4.5V
1V @ 250µA
0.9nC @ 4.5V
39pF @ 10V
350mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
DMN52D0UDWQ-13
Diodes Incorporated

MOSFET BVDSS: 31V~40V SOT363 T&R

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
  • Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 42.3pF @ 25V
  • Power - Max: 300mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
package: -
Request a Quote
-
50V
350mA (Ta)
2Ohm @ 50mA, 5V
1V @ 250µA
1.5nC @ 10V
42.3pF @ 25V
300mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
BSM600D12P3G001
Rohm Semiconductor

SIC 2N-CH 1200V 600A MODULE

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 600A (Tc)
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: 5.6V @ 182mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 31000pF @ 10V
  • Power - Max: 2450W (Tc)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
package: -
Voorraad12
-
1200V (1.2kV)
600A (Tc)
-
5.6V @ 182mA
-
31000pF @ 10V
2450W (Tc)
-40°C ~ 150°C (TJ)
Chassis Mount
Module
Module
PJL9850_R2_00001
Panjit International Inc.

MOSFET 2N-CH 40V 5.4A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
  • Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 425pF @ 25V
  • Power - Max: 1.7W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
package: -
Voorraad11.454
-
40V
5.4A (Ta)
32mOhm @ 5A, 10V
2.5V @ 250µA
4.4nC @ 4.5V
425pF @ 25V
1.7W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
TSM8568CV-RGG
Taiwan Semiconductor Corporation

-30V, -4.5A, COMPLEMENTARY P-CHA

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
Voorraad30.000
-
-
-
-
-
-
-
-
-
-
-
-
SH8MA2GZETB
Rohm Semiconductor

MOSFET N/P-CH 30V 4.5A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 80mOhm @ 4.5A, 10V, 82mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V, 6.7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 125pF @ 15V, 305pF @ 15V
  • Power - Max: 1.4W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
package: -
Voorraad9.813
-
30V
4.5A (Ta)
80mOhm @ 4.5A, 10V, 82mOhm @ 4.5A, 10V
2.5V @ 1mA
3nC @ 4.5V, 6.7nC @ 4.5V
125pF @ 15V, 305pF @ 15V
1.4W (Ta)
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
DMG1023UVQ-7
Diodes Incorporated

MOSFET 2P-CH 20V 1.03A SOT563

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.03A (Ta)
  • Rds On (Max) @ Id, Vgs: 750mOhm @ 430mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.622nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 59pF @ 16V
  • Power - Max: 530mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
package: -
Voorraad8.700
-
20V
1.03A (Ta)
750mOhm @ 430mA, 4.5V
1V @ 250µA
0.622nC @ 4.5V
59pF @ 16V
530mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
2N7002DWAQ-7
Diodes Incorporated

MOSFET 2N-CH 60V 0.18A SOT363

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
  • Rds On (Max) @ Id, Vgs: 6Ohm @ 115mA, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.87nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V
  • Power - Max: 300mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
package: -
Request a Quote
-
60V
180mA (Ta)
6Ohm @ 115mA, 10V
2.5V @ 250µA
0.87nC @ 10V
22pF @ 25V
300mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363