Pagina 190 - Transistors - FET's, MOSFET's - Arrays | Discrete halfgeleiderproducten | Heisener Electronics
Contacteer ons
SalesDept@heisener.com +86-755-83210559 ext. 805
Language Translation

* Please refer to the English Version as our Official Version.

Transistors - FET's, MOSFET's - Arrays

Archief 5.684
Pagina  190/203
Afbeelding
Onderdeelnummer
Fabrikant
Omschrijving
package
Voorraad
Aantal
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
hot BSO615CT
Infineon Technologies

MOSFET N/P-CH 60V 3.1A/2A 8SOIC

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 3.1A, 2A
  • Rds On (Max) @ Id, Vgs: 110 mOhm @ 3.1A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 20µA
  • Gate Charge (Qg) (Max) @ Vgs: 22.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: PG-DSO-8
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad11.400
Logic Level Gate
60V
3.1A, 2A
110 mOhm @ 3.1A, 10V
2V @ 20µA
22.5nC @ 10V
380pF @ 25V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
PG-DSO-8
AO6802L_001
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 3.5A 6-TSOP

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A
  • Rds On (Max) @ Id, Vgs: 50 mOhm @ 3.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 15V
  • Power - Max: 1.15W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-74, SOT-457
  • Supplier Device Package: 6-TSOP
package: SC-74, SOT-457
Voorraad7.872
Logic Level Gate
30V
3.5A
50 mOhm @ 3.5A, 10V
2.5V @ 250µA
5nC @ 10V
210pF @ 15V
1.15W
-55°C ~ 150°C (TJ)
Surface Mount
SC-74, SOT-457
6-TSOP
AON6974
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 22A/30A 8DFN

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 22A, 30A
  • Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 951pF @ 15V
  • Power - Max: 3.6W, 4.3W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: 8-DFN (5x6)
package: 8-PowerVDFN
Voorraad2.848
Logic Level Gate
30V
22A, 30A
5.2 mOhm @ 20A, 10V
2.2V @ 250µA
22.5nC @ 10V
951pF @ 15V
3.6W, 4.3W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerVDFN
8-DFN (5x6)
MVDF1N05ER2G
ON Semiconductor

MOSFET 2N-CH 50V 2A 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 2A
  • Rds On (Max) @ Id, Vgs: 300 mOhm @ 1.5A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad4.480
Logic Level Gate
50V
2A
300 mOhm @ 1.5A, 10V
3V @ 250µA
12.5nC @ 10V
330pF @ 25V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
VBH40-05B
IXYS

MOSFET 4N-CH 500V 40A V2

  • FET Type: 4 N-Channel (H-Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 40A
  • Rds On (Max) @ Id, Vgs: 116 mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: V2-PAK
  • Supplier Device Package: V2-PAK
package: V2-PAK
Voorraad5.504
Standard
500V
40A
116 mOhm @ 30A, 10V
4V @ 8mA
270nC @ 10V
-
-
-40°C ~ 150°C (TJ)
Chassis Mount
V2-PAK
V2-PAK
DMN61D9UDW-13
Diodes Incorporated

MOSFET 2N-CH 60V 0.35A SOT363

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 350mA
  • Rds On (Max) @ Id, Vgs: 2 Ohm @ 50mA, 5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 28.5pF @ 30V
  • Power - Max: 320mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
package: 6-TSSOP, SC-88, SOT-363
Voorraad7.520
Standard
60V
350mA
2 Ohm @ 50mA, 5V
1V @ 250µA
0.4nC @ 4.5V
28.5pF @ 30V
320mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
hot NX3008CBKV,115
Nexperia USA Inc.

MOSFET N/P-CH 30V SOT666

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 400mA, 220mA
  • Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 350mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.68nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V
  • Power - Max: 500mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-666
package: SOT-563, SOT-666
Voorraad48.000
Logic Level Gate
30V
400mA, 220mA
1.4 Ohm @ 350mA, 4.5V
1.1V @ 250µA
0.68nC @ 4.5V
50pF @ 15V
500mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-666
hot SH8J62TB1
Rohm Semiconductor

MOSFET 2P-CH 30V 4.5A SOP8

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A
  • Rds On (Max) @ Id, Vgs: 56 mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 8nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 10V
  • Power - Max: 2W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad7.608
Logic Level Gate
30V
4.5A
56 mOhm @ 4.5A, 10V
2.5V @ 1mA
8nC @ 5V
800pF @ 10V
2W
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
hot US6K2TR
Rohm Semiconductor

MOSFET 2N-CH 30V 1.4A TUMT6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 1.4A
  • Rds On (Max) @ Id, Vgs: 240 mOhm @ 1.4A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 2nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 10V
  • Power - Max: 1W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, Flat Leads
  • Supplier Device Package: TUMT6
package: 6-SMD, Flat Leads
Voorraad432.000
Logic Level Gate
30V
1.4A
240 mOhm @ 1.4A, 10V
2.5V @ 1mA
2nC @ 5V
70pF @ 10V
1W
150°C (TJ)
Surface Mount
6-SMD, Flat Leads
TUMT6
hot NTHC5513T1G
ON Semiconductor

MOSFET N/P-CH 20V 1206A

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.2A
  • Rds On (Max) @ Id, Vgs: 80 mOhm @ 2.9A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 10V
  • Power - Max: 1.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: ChipFET?
package: 8-SMD, Flat Lead
Voorraad123.960
Logic Level Gate
20V
2.9A, 2.2A
80 mOhm @ 2.9A, 4.5V
1.2V @ 250µA
4nC @ 4.5V
180pF @ 10V
1.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-SMD, Flat Lead
ChipFET?
hot DMG1024UV-7
Diodes Incorporated

MOSFET 2N-CH 20V 1.38A SOT563

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.38A
  • Rds On (Max) @ Id, Vgs: 450 mOhm @ 600mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 60.67pF @ 16V
  • Power - Max: 530mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
package: SOT-563, SOT-666
Voorraad36.600
Logic Level Gate
20V
1.38A
450 mOhm @ 600mA, 4.5V
1V @ 250µA
0.74nC @ 4.5V
60.67pF @ 16V
530mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
hot FDY2000PZ
Fairchild/ON Semiconductor

MOSFET 2P-CH 20V 0.35A SOT-563F

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 350mA
  • Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 350mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 10V
  • Power - Max: 446mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SC-89-6
package: SOT-563, SOT-666
Voorraad36.000
Logic Level Gate
20V
350mA
1.2 Ohm @ 350mA, 4.5V
1.5V @ 250µA
1.4nC @ 4.5V
100pF @ 10V
446mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SC-89-6
SLA5065
Sanken

MOSFET 4N-CH 60V 7A 15-SIP

  • FET Type: 4 N-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 7A
  • Rds On (Max) @ Id, Vgs: 100 mOhm @ 3.5A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 10V
  • Power - Max: 4.8W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 15-SIP, Exposed Tab, Formed Leads
  • Supplier Device Package: 15-ZIP
package: 15-SIP, Exposed Tab, Formed Leads
Voorraad18.660
Standard
60V
7A
100 mOhm @ 3.5A, 10V
2V @ 250µA
-
660pF @ 10V
4.8W
150°C (TJ)
Through Hole
15-SIP, Exposed Tab, Formed Leads
15-ZIP
hot IRF7501TRPBF
Infineon Technologies

MOSFET 2N-CH 20V 2.4A MICRO8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.4A
  • Rds On (Max) @ Id, Vgs: 135 mOhm @ 1.7A, 4.5V
  • Vgs(th) (Max) @ Id: 700mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 15V
  • Power - Max: 1.25W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
  • Supplier Device Package: Micro8?
package: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Voorraad5.344
Logic Level Gate
20V
2.4A
135 mOhm @ 1.7A, 4.5V
700mV @ 250µA
8nC @ 4.5V
260pF @ 15V
1.25W
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Micro8?
hot DMN2004DWK-7
Diodes Incorporated

MOSFET 2N-CH 20V 0.54A SOT-363

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 540mA
  • Rds On (Max) @ Id, Vgs: 550 mOhm @ 540mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V
  • Power - Max: 200mW
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
package: 6-TSSOP, SC-88, SOT-363
Voorraad411.024
Logic Level Gate
20V
540mA
550 mOhm @ 540mA, 4.5V
1V @ 250µA
-
150pF @ 16V
200mW
-65°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
NTK3142PT1H
Sanyo

MOSFET P-CH

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
SCH2822-TL-E
onsemi

PCH+SBD 2.5V DRIVE SERIES

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
DMN3022LDG-7
Diodes Incorporated

MOSFET 2N-CH 30V 7.6A PWRDI3333

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 15A (Tc)
  • Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 5V, 8mOhm @ 10A, 5V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 4.5V, 8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 481pF @ 15V, 996pF @ 15V
  • Power - Max: 1.96W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerLDFN
  • Supplier Device Package: PowerDI3333-8 (Type D)
package: -
Request a Quote
-
30V
7.6A (Ta), 15A (Tc)
22mOhm @ 10A, 5V, 8mOhm @ 10A, 5V
2.1V @ 250µA, 1.2V @ 250µA
3.7nC @ 4.5V, 8nC @ 4.5V
481pF @ 15V, 996pF @ 15V
1.96W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerLDFN
PowerDI3333-8 (Type D)
VEC2301-TL-E
onsemi

PCH+PCH 2.5V DRIVE SERIES

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
ECH8606-TL-H
onsemi

NCH+NCH 4V DRIVE SERIES

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
MCACD12NP10Y-TP
Micro Commercial Co

MOSFET

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Tc), 12A (Tc)
  • Rds On (Max) @ Id, Vgs: 26mOhm @ 25A, 10V, 120mOhm @ 12A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V, 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 50V, 1100pF @ 50V
  • Power - Max: -
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: DFN5060-8D
package: -
Request a Quote
-
100V
25A (Tc), 12A (Tc)
26mOhm @ 25A, 10V, 120mOhm @ 12A, 10V
2.5V @ 250µA
32nC @ 10V, 20nC @ 10V
1200pF @ 50V, 1100pF @ 50V
-
-55°C ~ 150°C
Surface Mount
8-PowerVDFN
DFN5060-8D
DMTH6015LDVWQ-7
Diodes Incorporated

MOSFET 2N-CH 60V 9.2A PWRDI3333

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 24.5A (Tc)
  • Rds On (Max) @ Id, Vgs: 20.5mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 825pF @ 30V
  • Power - Max: 1.46W (Ta)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PowerDI3333-8 (Type UXD)
package: -
Request a Quote
-
60V
9.2A (Ta), 24.5A (Tc)
20.5mOhm @ 10A, 10V
2.5V @ 250µA
14.3nC @ 10V
825pF @ 30V
1.46W (Ta)
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerVDFN
PowerDI3333-8 (Type UXD)
2N7002HSX
Nexperia USA Inc.

MOSFET 2N-CH 60V 0.32A 6TSSOP

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)
  • Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 34pF @ 10V
  • Power - Max: 420mW
  • Operating Temperature: -55°C ~ 150°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: 6-TSSOP
package: -
Voorraad18.351
-
60V
320mA (Ta)
1.6Ohm @ 500mA, 10V
2.5V @ 250µA
0.5nC @ 4.5V
34pF @ 10V
420mW
-55°C ~ 150°C (TA)
Surface Mount
6-TSSOP, SC-88, SOT-363
6-TSSOP
FF8MR12W1M1HB70BPSA1
Infineon Technologies

MOSFET

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
Voorraad72
-
-
-
-
-
-
-
-
-
-
-
-
PJT7812_R1_00001
Panjit International Inc.

MOSFET 2N-CH 30V 0.5A SOT363

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
  • Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.87nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 34pF @ 15V
  • Power - Max: 350mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
package: -
Request a Quote
-
30V
500mA (Ta)
1.2Ohm @ 500mA, 4.5V
1.1V @ 250µA
0.87nC @ 4.5V
34pF @ 15V
350mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
SQ4937EY-T1_BE3
Vishay Siliconix

MOSFET 2P-CH 30V 5A 8SOIC

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
  • Rds On (Max) @ Id, Vgs: 75mOhm @ 3.9A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 25V
  • Power - Max: 3.3W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
package: -
Voorraad3.000
-
30V
5A (Tc)
75mOhm @ 3.9A, 10V
2.5V @ 250µA
15nC @ 10V
480pF @ 25V
3.3W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
MMBT7002DW
Diotec Semiconductor

MOSFET SOT363 N+N 60V 7.5OHM

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 115mA (Ta)
  • Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
  • Power - Max: 200mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-VSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
package: -
Request a Quote
Logic Level Gate
60V
115mA (Ta)
7.5Ohm @ 500mA, 10V
2.5V @ 250µA
-
50pF @ 25V
200mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-VSSOP, SC-88, SOT-363
SOT-363
MCACD40NP03-TP
Micro Commercial Co

MOSFET

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V, 12mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA, 2.7V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 23.6nC @ 10V, 38nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 15V, 1860pF @ 15V
  • Power - Max: 50W (Tj), 54W (Tj)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerLDFN
  • Supplier Device Package: PDFN5060-8D
package: -
Request a Quote
-
30V
40A (Tc)
9mOhm @ 20A, 10V, 12mOhm @ 20A, 10V
2.5V @ 250µA, 2.7V @ 250µA
23.6nC @ 10V, 38nC @ 10V
1050pF @ 15V, 1860pF @ 15V
50W (Tj), 54W (Tj)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerLDFN
PDFN5060-8D