Pagina 189 - Transistors - FET's, MOSFET's - Arrays | Discrete halfgeleiderproducten | Heisener Electronics
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Transistors - FET's, MOSFET's - Arrays

Archief 5.684
Pagina  189/203
Afbeelding
Onderdeelnummer
Fabrikant
Omschrijving
package
Voorraad
Aantal
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
EFC8822R-TF
ON Semiconductor

MOSFET N-CH DUAL 6CSP

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
Voorraad3.504
-
-
-
-
-
-
-
-
-
-
-
-
hot SI6966EDQ-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 20V 8TSSOP

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 30 mOhm @ 5.2A, 4.5V
  • Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.25W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
package: 8-TSSOP (0.173", 4.40mm Width)
Voorraad414.252
Logic Level Gate
20V
-
30 mOhm @ 5.2A, 4.5V
600mV @ 250µA (Min)
25nC @ 4.5V
-
1.25W
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
hot SI6933DQ-T1-E3
Vishay Siliconix

MOSFET 2P-CH 30V 8-TSSOP

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 45 mOhm @ 3.5A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
package: 8-TSSOP (0.173", 4.40mm Width)
Voorraad85.152
Logic Level Gate
30V
-
45 mOhm @ 3.5A, 10V
1V @ 250µA (Min)
30nC @ 10V
-
1W
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
hot SI4992EY-T1-E3
Vishay Siliconix

MOSFET 2N-CH 75V 3.6A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 3.6A
  • Rds On (Max) @ Id, Vgs: 48 mOhm @ 4.8A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.4W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad6.784
Logic Level Gate
75V
3.6A
48 mOhm @ 4.8A, 10V
3V @ 250µA
21nC @ 10V
-
1.4W
-55°C ~ 175°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot IRF7301PBF
Infineon Technologies

MOSFET 2N-CH 20V 5.2A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5.2A
  • Rds On (Max) @ Id, Vgs: 50 mOhm @ 2.6A, 4.5V
  • Vgs(th) (Max) @ Id: 700mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad6.256
Logic Level Gate
20V
5.2A
50 mOhm @ 2.6A, 4.5V
700mV @ 250µA
20nC @ 4.5V
660pF @ 15V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
ALD212914PAL
Advanced Linear Devices Inc.

MOSFET 2N-CH 10.6V 0.08A 8DIP

  • FET Type: 2 N-Channel (Dual) Matched Pair
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 10.6V
  • Current - Continuous Drain (Id) @ 25°C: 80mA
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: 20mV @ 10µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 500mW
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-PDIP
package: 8-DIP (0.300", 7.62mm)
Voorraad4.736
Logic Level Gate
10.6V
80mA
-
20mV @ 10µA
-
-
500mW
-
Through Hole
8-DIP (0.300", 7.62mm)
8-PDIP
DMP2065UFDB-13
Diodes Incorporated

MOSFET BVDSS: 8V 24V U-DFN2020-6

  • FET Type: 2 P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 50 mOhm @ 2A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 752pF @ 15V
  • Power - Max: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: U-DFN2020-6 (Type B)
package: 6-UDFN Exposed Pad
Voorraad4.688
Standard
-
4.5A (Ta)
50 mOhm @ 2A, 4.5V
1V @ 250µA
9.1nC @ 4.5V
752pF @ 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
U-DFN2020-6 (Type B)
SQJB42EP-T1_GE3
Vishay Siliconix

MOSFET ARRAY 2N-CH 40V SO8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 25V
  • Power - Max: 48W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? SO-8 Dual
  • Supplier Device Package: PowerPAK? SO-8 Dual
package: PowerPAK? SO-8 Dual
Voorraad2.064
Standard
40V
30A (Tc)
9.5 mOhm @ 10A, 10V
3.5V @ 250µA
30nC @ 10V
1500pF @ 25V
48W
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK? SO-8 Dual
PowerPAK? SO-8 Dual
ALD310702APCL
Advanced Linear Devices Inc.

QUAD P-CHANNEL EPAD MATCHED PAIR

  • FET Type: 4 P-Channel, Matched Pair
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 8V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: 180mV @ 1µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
  • Power - Max: 500mW
  • Operating Temperature: 0°C ~ 70°C
  • Mounting Type: Through Hole
  • Package / Case: 16-DIP (0.300", 7.62mm)
  • Supplier Device Package: 16-PDIP
package: 16-DIP (0.300", 7.62mm)
Voorraad4.304
Standard
8V
-
-
180mV @ 1µA
-
2.5pF @ 5V
500mW
0°C ~ 70°C
Through Hole
16-DIP (0.300", 7.62mm)
16-PDIP
ALD110900PAL
Advanced Linear Devices Inc.

MOSFET 2N-CH 10.6V 8DIP

  • FET Type: 2 N-Channel (Dual) Matched Pair
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 10.6V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 500 Ohm @ 4V
  • Vgs(th) (Max) @ Id: 20mV @ 1µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
  • Power - Max: 500mW
  • Operating Temperature: 0°C ~ 70°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-PDIP
package: 8-DIP (0.300", 7.62mm)
Voorraad6.024
Standard
10.6V
-
500 Ohm @ 4V
20mV @ 1µA
-
2.5pF @ 5V
500mW
0°C ~ 70°C (TJ)
Through Hole
8-DIP (0.300", 7.62mm)
8-PDIP
hot IRF7316GTRPBF
Infineon Technologies

MOSFET 2P-CH 30V 4.9A 8SOIC

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.9A
  • Rds On (Max) @ Id, Vgs: 58 mOhm @ 4.9A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad24.000
Logic Level Gate
30V
4.9A
58 mOhm @ 4.9A, 10V
1V @ 250µA
34nC @ 10V
710pF @ 25V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
IPG20N04S4L11ATMA1
Infineon Technologies

MOSFET 2N-CH 8TDSON

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 20A
  • Rds On (Max) @ Id, Vgs: 11.6 mOhm @ 17A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 15µA
  • Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 25V
  • Power - Max: 41W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PG-TDSON-8-4
package: 8-PowerVDFN
Voorraad5.728
Logic Level Gate
40V
20A
11.6 mOhm @ 17A, 10V
2.2V @ 15µA
26nC @ 10V
1990pF @ 25V
41W
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerVDFN
PG-TDSON-8-4
FDMS3615S
Fairchild/ON Semiconductor

MOSFET 2N-CH 25V 16A/18A 8-PQFN

  • FET Type: 2 N-Channel (Dual) Asymmetrical
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 16A, 18A
  • Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 16A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1765pF @ 13V
  • Power - Max: 1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: Power56
package: 8-PowerTDFN
Voorraad7.296
Logic Level Gate
25V
16A, 18A
5.8 mOhm @ 16A, 10V
2.5V @ 250µA
27nC @ 10V
1765pF @ 13V
1W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerTDFN
Power56
hot FDG6320C
Fairchild/ON Semiconductor

MOSFET N/P-CH 25V SC70-6

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 220mA, 140mA
  • Rds On (Max) @ Id, Vgs: 4 Ohm @ 220mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 10V
  • Power - Max: 300mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-70-6
package: 6-TSSOP, SC-88, SOT-363
Voorraad402.000
Logic Level Gate
25V
220mA, 140mA
4 Ohm @ 220mA, 4.5V
1.5V @ 250µA
0.4nC @ 4.5V
9.5pF @ 10V
300mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-70-6
hot FDC6333C
Fairchild/ON Semiconductor

MOSFET N/P-CH 30V 2.5A/2A SSOT6

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A, 2A
  • Rds On (Max) @ Id, Vgs: 95 mOhm @ 2.5A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 282pF @ 15V
  • Power - Max: 700mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: SuperSOT?-6
package: SOT-23-6 Thin, TSOT-23-6
Voorraad86.856
Logic Level Gate
30V
2.5A, 2A
95 mOhm @ 2.5A, 10V
3V @ 250µA
6.6nC @ 10V
282pF @ 15V
700mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
SuperSOT?-6
EFC4K110NUZTDG
onsemi

MOSFET 2N-CH 24V 25A 10WLCSP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 24V
  • Current - Continuous Drain (Id) @ 25°C: 25A
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 49nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 2.5W
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 10-SMD, No Lead
  • Supplier Device Package: 10-WLCSP (3.2x2.1)
package: -
Request a Quote
-
24V
25A
-
-
49nC @ 4.5V
-
2.5W
-
Surface Mount
10-SMD, No Lead
10-WLCSP (3.2x2.1)
FDMS3602S-P
onsemi

MOSFET 2N-CH 25V 15A/30A 8PQFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 30A (Tc), 26A (Ta), 40A (Tc)
  • Rds On (Max) @ Id, Vgs: 5.6mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA, 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V, 64nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 13V, 4120pF @ 13V
  • Power - Max: 2.2W (Ta), 2.5W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-PQFN (5x6)
package: -
Request a Quote
-
25V
15A (Ta), 30A (Tc), 26A (Ta), 40A (Tc)
5.6mOhm @ 15A, 10V
3V @ 250µA, 3V @ 1mA
27nC @ 10V, 64nC @ 10V
1680pF @ 13V, 4120pF @ 13V
2.2W (Ta), 2.5W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerTDFN
8-PQFN (5x6)
DMN16M0UCA6-7
Diodes Incorporated

MOSFET 2N-CH 12V 17A X4-DSN2112

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
  • Rds On (Max) @ Id, Vgs: 5.9mOhm @ 5A, 4.5V
  • Vgs(th) (Max) @ Id: 1.3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 900mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, No Lead
  • Supplier Device Package: X4-DSN2112-6
package: -
Request a Quote
-
12V
17A (Ta)
5.9mOhm @ 5A, 4.5V
1.3V @ 1mA
24nC @ 4.5V
-
900mW
-55°C ~ 150°C (TJ)
Surface Mount
6-SMD, No Lead
X4-DSN2112-6
CAB008A12GM3T
Wolfspeed, Inc.

SIC 2N-CH 1200V 182A MODULE

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 182A (Tj)
  • Rds On (Max) @ Id, Vgs: 10.4mOhm @ 150A, 15V
  • Vgs(th) (Max) @ Id: 3.6V @ 46mA
  • Gate Charge (Qg) (Max) @ Vgs: 472nC @ 15V
  • Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 800V
  • Power - Max: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
package: -
Voorraad15
-
1200V (1.2kV)
182A (Tj)
10.4mOhm @ 150A, 15V
3.6V @ 46mA
472nC @ 15V
13600pF @ 800V
-
-40°C ~ 150°C (TJ)
Chassis Mount
Module
Module
MSCSM170AM058CT6LIAG
Microchip Technology

SIC 2N-CH 1700V 353A

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1700V (1.7kV)
  • Current - Continuous Drain (Id) @ 25°C: 353A (Tc)
  • Rds On (Max) @ Id, Vgs: 7.5mOhm @ 180A, 20V
  • Vgs(th) (Max) @ Id: 3.3V @ 15mA
  • Gate Charge (Qg) (Max) @ Vgs: 1068nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 19800pF @ 1000V
  • Power - Max: 1.642kW (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
package: -
Voorraad6
-
1700V (1.7kV)
353A (Tc)
7.5mOhm @ 180A, 20V
3.3V @ 15mA
1068nC @ 20V
19800pF @ 1000V
1.642kW (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
-
RF1K4909096
Fairchild Semiconductor

MOSFET 2N-CH 12V 3.5A 8SOIC

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 10V
  • Power - Max: 2W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
package: -
Request a Quote
Logic Level Gate
12V
3.5A (Ta)
50mOhm @ 3.5A, 5V
2V @ 250µA
25nC @ 10V
750pF @ 10V
2W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
SSFB12N05
Good-Ark Semiconductor

MOSFET N/P-CH 12V 5A 6DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
  • Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 4.5V, 74mOhm @ 4.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 4.5V, 9.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 495pF @ 6V, 520pF @ 6V
  • Power - Max: 1.9W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-WDFN Exposed Pad
  • Supplier Device Package: 6-DFN (2x2)
package: -
Voorraad24.000
-
12V
5A (Ta)
32mOhm @ 5A, 4.5V, 74mOhm @ 4.5A, 4.5V
1V @ 250µA
6.6nC @ 4.5V, 9.2nC @ 4.5V
495pF @ 6V, 520pF @ 6V
1.9W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-WDFN Exposed Pad
6-DFN (2x2)
A1F25M12W2-F1
STMicroelectronics

SIC 4N-CH 1200V 50A ACEPACK1

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 50A
  • Rds On (Max) @ Id, Vgs: 34mOhm @ 50A, 18V
  • Vgs(th) (Max) @ Id: 4.9V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 147nC @ 18V
  • Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 800V
  • Power - Max: -
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: ACEPACK 1
package: -
Request a Quote
-
1200V (1.2kV)
50A
34mOhm @ 50A, 18V
4.9V @ 5mA
147nC @ 18V
3500pF @ 800V
-
175°C (TJ)
Chassis Mount
Module
ACEPACK 1
FW216-NMM-TL-E-SY
Sanyo

MOSFET N-CH

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
UPA1763G-E1-A
Renesas Electronics Corporation

MOSFET 4.5A

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: 4.5A
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
Request a Quote
-
-
4.5A
-
-
-
-
-
-
-
-
-
QH8KE6TCR
Rohm Semiconductor

100V 4A, DUAL NCH+NCH, TSMT8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
  • Rds On (Max) @ Id, Vgs: 56mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 50V
  • Power - Max: 1.1W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: TSMT8
package: -
Voorraad9.000
-
100V
4A (Ta)
56mOhm @ 4A, 10V
2.5V @ 1mA
6.7nC @ 10V
305pF @ 50V
1.1W (Ta)
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
TSMT8
PJQ5839E-AU_R2_002A1
Panjit International Inc.

30V DUAL P-CHANNEL ENHANCEMENT M

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 31A (Tc)
  • Rds On (Max) @ Id, Vgs: 19.1mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1012pF @ 25V
  • Power - Max: 2.5W (Ta), 30W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: DFN5060B-8
package: -
Voorraad9.000
-
30V
9A (Ta), 31A (Tc)
19.1mOhm @ 10A, 10V
2.5V @ 250µA
22nC @ 10V
1012pF @ 25V
2.5W (Ta), 30W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerTDFN
DFN5060B-8
DMT3006LPB-13
Diodes Incorporated

MOSFET 2N-CH 11A/35A POWERDI50

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 35A (Tc), 14A (Ta), 50A (Tc)
  • Rds On (Max) @ Id, Vgs: 11.1mOhm @ 11.5A, 10V, 6mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: PowerDI5060-8 (Type S)
package: -
Request a Quote
-
-
11A (Ta), 35A (Tc), 14A (Ta), 50A (Tc)
11.1mOhm @ 11.5A, 10V, 6mOhm @ 20A, 10V
3V @ 250µA
-
-
-
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerTDFN
PowerDI5060-8 (Type S)