Pagina 140 - Transistors - FET's, MOSFET's - Arrays | Discrete halfgeleiderproducten | Heisener Electronics
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Transistors - FET's, MOSFET's - Arrays

Archief 5.684
Pagina  140/203
Afbeelding
Onderdeelnummer
Fabrikant
Omschrijving
package
Voorraad
Aantal
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
hot AUIRF7379Q
Infineon Technologies

MOSFET N/P-CH 30V 5.8A 8SOIC

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5.8A, 4.3A
  • Rds On (Max) @ Id, Vgs: 45 mOhm @ 5.8A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V
  • Power - Max: 2.5W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad426.360
Logic Level Gate
30V
5.8A, 4.3A
45 mOhm @ 5.8A, 10V
3V @ 250µA
25nC @ 10V
520pF @ 25V
2.5W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
AO4854L_102
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 8A 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8A
  • Rds On (Max) @ Id, Vgs: 19 mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 888pF @ 15V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad6.464
Logic Level Gate
30V
8A
19 mOhm @ 8A, 10V
2.4V @ 250µA
18nC @ 10V
888pF @ 15V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
QJD1210SB1
Powerex Inc.

MOD MOSFET 1200V 10A DUAL SIC

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
Voorraad5.728
-
-
-
-
-
-
-
-
-
-
-
-
hot CSD75211W1723
Texas Instruments

MOSFET 2P-CH 20V 4.5A 12DSBGA

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A
  • Rds On (Max) @ Id, Vgs: 40 mOhm @ 2A, 4.5V
  • Vgs(th) (Max) @ Id: 1.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.9nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
  • Power - Max: 1.5W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 12-UFBGA, DSBGA
  • Supplier Device Package: 12-DSBGA
package: 12-UFBGA, DSBGA
Voorraad2.535.192
Logic Level Gate
20V
4.5A
40 mOhm @ 2A, 4.5V
1.1V @ 250µA
5.9nC @ 4.5V
600pF @ 10V
1.5W
-55°C ~ 150°C (TJ)
Surface Mount
12-UFBGA, DSBGA
12-DSBGA
NTLJD3181PZTAG
ON Semiconductor

MOSFET 2P-CH 20V 2.2A 6WDFN

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.2A
  • Rds On (Max) @ Id, Vgs: 100 mOhm @ 2A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 10V
  • Power - Max: 710mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-WDFN Exposed Pad
  • Supplier Device Package: 6-WDFN (2x2)
package: 6-WDFN Exposed Pad
Voorraad3.632
Logic Level Gate
20V
2.2A
100 mOhm @ 2A, 4.5V
1V @ 250µA
7.8nC @ 4.5V
450pF @ 10V
710mW
-55°C ~ 150°C (TJ)
Surface Mount
6-WDFN Exposed Pad
6-WDFN (2x2)
FDMJ1028N
Fairchild/ON Semiconductor

MOSFET 2N-CH 20V 3.2A 6-MICROFET

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.2A
  • Rds On (Max) @ Id, Vgs: 90 mOhm @ 3.2A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 10V
  • Power - Max: 800mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-WFDFN Exposed Pad
  • Supplier Device Package: 6-MicroFET (2x2)
package: 6-WFDFN Exposed Pad
Voorraad2.080
Logic Level Gate
20V
3.2A
90 mOhm @ 3.2A, 4.5V
1.5V @ 250µA
3nC @ 4.5V
200pF @ 10V
800mW
-55°C ~ 150°C (TJ)
Surface Mount
6-WFDFN Exposed Pad
6-MicroFET (2x2)
hot FDJ1028N
Fairchild/ON Semiconductor

MOSFET 2N-CH 20V 3.2A SC-75

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.2A
  • Rds On (Max) @ Id, Vgs: 90 mOhm @ 3.2A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 10V
  • Power - Max: 1.5W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC75-6 FLMP
  • Supplier Device Package: SC75-6 FLMP
package: SC75-6 FLMP
Voorraad176.304
Logic Level Gate
20V
3.2A
90 mOhm @ 3.2A, 4.5V
1.5V @ 250µA
3nC @ 4.5V
200pF @ 10V
1.5W
-55°C ~ 150°C (TJ)
Surface Mount
SC75-6 FLMP
SC75-6 FLMP
hot UP0487800L
Panasonic Electronic Components

MOSFET 2N-CH 50V .1A SS-MINI-6P

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 100mA
  • Rds On (Max) @ Id, Vgs: 12 Ohm @ 10mA, 4V
  • Vgs(th) (Max) @ Id: 1.5V @ 1µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 3V
  • Power - Max: 125mW
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SSMINI6-F1
package: SOT-563, SOT-666
Voorraad1.485.516
Logic Level Gate
50V
100mA
12 Ohm @ 10mA, 4V
1.5V @ 1µA
-
12pF @ 3V
125mW
125°C (TJ)
Surface Mount
SOT-563, SOT-666
SSMINI6-F1
hot STC5NF30V
STMicroelectronics

MOSFET 2N-CH 30V 5A 8-TSSOP

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5A
  • Rds On (Max) @ Id, Vgs: 31 mOhm @ 2.5A, 4.5V
  • Vgs(th) (Max) @ Id: 600mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 15V
  • Power - Max: 1.5W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
package: 8-TSSOP (0.173", 4.40mm Width)
Voorraad125.676
Logic Level Gate
30V
5A
31 mOhm @ 2.5A, 4.5V
600mV @ 250µA
11.5nC @ 4.5V
460pF @ 15V
1.5W
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
APTC60TAM35PG
Microsemi Corporation

MOSFET 6N-CH 600V 72A SP6-P

  • FET Type: 6 N-Channel (3-Phase Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 72A
  • Rds On (Max) @ Id, Vgs: 35 mOhm @ 72A, 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 5.4mA
  • Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
  • Power - Max: 416W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP6
  • Supplier Device Package: SP6-P
package: SP6
Voorraad6.176
Standard
600V
72A
35 mOhm @ 72A, 10V
3.9V @ 5.4mA
518nC @ 10V
14000pF @ 25V
416W
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6-P
hot AON3818
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 24V 8A

  • FET Type: 2 N-Channel (Dual) Common Drain
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 24V
  • Current - Continuous Drain (Id) @ 25°C: 8A
  • Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 8A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 12V
  • Power - Max: 2.7W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 8-DFN (2.9x2.3)
package: 8-SMD, Flat Lead
Voorraad5.040
Logic Level Gate
24V
8A
13.5 mOhm @ 8A, 4.5V
1.2V @ 250µA
15nC @ 4.5V
840pF @ 12V
2.7W
-55°C ~ 150°C (TJ)
Surface Mount
8-SMD, Flat Lead
8-DFN (2.9x2.3)
IPG20N10S4L22AATMA1
Infineon Technologies

MOSFET 2N-CH 100V 20A TDSON-8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 20A
  • Rds On (Max) @ Id, Vgs: 22 mOhm @ 17A, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1755pF @ 25V
  • Power - Max: 60W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PG-TDSON-8-10
package: 8-PowerVDFN
Voorraad5.856
Logic Level Gate
100V
20A
22 mOhm @ 17A, 10V
2.1V @ 25µA
27nC @ 10V
1755pF @ 25V
60W
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerVDFN
PG-TDSON-8-10
hot FDG6308P
Fairchild/ON Semiconductor

MOSFET 2P-CH 20V 0.6A SC70-6

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 600mA
  • Rds On (Max) @ Id, Vgs: 400 mOhm @ 600mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 153pF @ 10V
  • Power - Max: 300mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-70-6
package: 6-TSSOP, SC-88, SOT-363
Voorraad6.864
Logic Level Gate
20V
600mA
400 mOhm @ 600mA, 4.5V
1.5V @ 250µA
2.5nC @ 4.5V
153pF @ 10V
300mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-70-6
hot FDG6335N
Fairchild/ON Semiconductor

MOSFET 2N-CH 20V 0.7A SOT-363

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 700mA
  • Rds On (Max) @ Id, Vgs: 300 mOhm @ 700mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 113pF @ 10V
  • Power - Max: 300mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-70-6
package: 6-TSSOP, SC-88, SOT-363
Voorraad217.116
Logic Level Gate
20V
700mA
300 mOhm @ 700mA, 4.5V
1.5V @ 250µA
1.4nC @ 4.5V
113pF @ 10V
300mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-70-6
WI62120
Wise-Integration

GANFET 650V 13A 14QFN

  • FET Type: GaNFET (Gallium Nitride)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 13A
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: 2.2V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 2.75nC @ 6V
  • Input Capacitance (Ciss) (Max) @ Vds: 92.7pF @ 400V
  • Power - Max: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 14-PowerLDFN
  • Supplier Device Package: 14-PQFN (6x8)
package: -
Voorraad4.437
-
650V
13A
-
2.2V @ 10mA
2.75nC @ 6V
92.7pF @ 400V
-
-40°C ~ 150°C (TJ)
Surface Mount
14-PowerLDFN
14-PQFN (6x8)
DMT32M6LDG-13
Diodes Incorporated

MOSFET 2N-CH 30V 21A PWRDI3333

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 47A (Tc)
  • Rds On (Max) @ Id, Vgs: 2.5mOhm @ 18A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 400µA
  • Gate Charge (Qg) (Max) @ Vgs: 15.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2101pF @ 15V
  • Power - Max: 1.1W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PowerDI3333-8 (Type G)
package: -
Voorraad8.970
-
30V
21A (Ta), 47A (Tc)
2.5mOhm @ 18A, 10V
2.2V @ 400µA
15.6nC @ 4.5V
2101pF @ 15V
1.1W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerVDFN
PowerDI3333-8 (Type G)
EFC2K107NUZTCG
onsemi

MOSFET 2N-CH 12V 20A 10WLCSP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate, 2.5V Drive
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
  • Rds On (Max) @ Id, Vgs: 2.85mOhm @ 5A, 4.5V
  • Vgs(th) (Max) @ Id: 1.3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 3.8V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.8W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 10-SMD, No Lead
  • Supplier Device Package: 10-WLCSP (1.84x1.96)
package: -
Voorraad14.091
Logic Level Gate, 2.5V Drive
12V
20A (Ta)
2.85mOhm @ 5A, 4.5V
1.3V @ 1mA
30nC @ 3.8V
-
1.8W (Ta)
150°C (TJ)
Surface Mount
10-SMD, No Lead
10-WLCSP (1.84x1.96)
IRF7307QTRPBF
Infineon Technologies

MOSFET N/P-CH 20V 5.2A/4.3A 8SO

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5.2A, 4.3A
  • Rds On (Max) @ Id, Vgs: 50mOhm @ 2.6A, 4.5V
  • Vgs(th) (Max) @ Id: 700mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V
  • Power - Max: 2W
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
package: -
Request a Quote
Logic Level Gate
20V
5.2A, 4.3A
50mOhm @ 2.6A, 4.5V
700mV @ 250µA
20nC @ 4.5V
660pF @ 15V
2W
-
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
G170P02D32
Goford Semiconductor

MOSFET P+P-CH 20V 20A 15W DFN3*3

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Rds On (Max) @ Id, Vgs: 21mOhm @ 6A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2193pF @ 10V
  • Power - Max: 15W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: 8-DFN (3.15x3.05) Dual
package: -
Voorraad15.000
-
20V
20A (Tc)
21mOhm @ 6A, 4.5V
1V @ 250µA
30nC @ 10V
2193pF @ 10V
15W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerVDFN
8-DFN (3.15x3.05) Dual
PJS6601-AU_S1_000A1
Panjit International Inc.

MOSFET N/P-CH 20V 4.1A SOT23-6

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), 3.1A (Ta)
  • Rds On (Max) @ Id, Vgs: 56mOhm @ 4.1A. 4.5V, 115mOhm @ 3.1A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V, 5.4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V, 416pF @ 10V
  • Power - Max: 1.25W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: SOT-23-6
package: -
Voorraad8.832
-
20V
4.1A (Ta), 3.1A (Ta)
56mOhm @ 4.1A. 4.5V, 115mOhm @ 3.1A, 4.5V
1.2V @ 250µA
4.6nC @ 4.5V, 5.4nC @ 4.5V
350pF @ 10V, 416pF @ 10V
1.25W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6
SOT-23-6
FAM65CR51ADZ1
onsemi

APM16-CDA SF3 650V 51MOHM SIC DI

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
  • Rds On (Max) @ Id, Vgs: 51mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 3.3mA
  • Gate Charge (Qg) (Max) @ Vgs: 123nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4864pF @ 400V
  • Power - Max: 189W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 12-SSIP Exposed Pad, Formed Leads
  • Supplier Device Package: APMCD-B16
package: -
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-
650V
41A (Tc)
51mOhm @ 20A, 10V
5V @ 3.3mA
123nC @ 10V
4864pF @ 400V
189W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
12-SSIP Exposed Pad, Formed Leads
APMCD-B16
SP8J5FRATB
Rohm Semiconductor

MOSFET 2P-CH 7A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate, 4V Drive
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
  • Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
package: -
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Logic Level Gate, 4V Drive
-
7A (Ta)
28mOhm @ 7A, 10V
2.5V @ 1mA
-
-
-
150°C
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
CAB011M12FM3T
Wolfspeed, Inc.

SIC 2N-CH 1200V 105A MODULE

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 105A (Tj)
  • Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 15V
  • Vgs(th) (Max) @ Id: 3.6V @ 35mA
  • Gate Charge (Qg) (Max) @ Vgs: 324nC @ 15V
  • Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 800V
  • Power - Max: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
package: -
Voorraad3
-
1200V (1.2kV)
105A (Tj)
14mOhm @ 100A, 15V
3.6V @ 35mA
324nC @ 15V
10300pF @ 800V
-
-40°C ~ 150°C (TJ)
Chassis Mount
Module
Module
BUK9K22-80EX
Nexperia USA Inc.

MOSFET 2N-CH 80V 21A LFPAK56D

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
  • Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 23.1nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 3115pF @ 25V
  • Power - Max: 64W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-1205, 8-LFPAK56
  • Supplier Device Package: LFPAK56D
package: -
Voorraad6.702
Logic Level Gate
80V
21A (Ta)
19mOhm @ 10A, 10V
2.1V @ 1mA
23.1nC @ 5V
3115pF @ 25V
64W
-55°C ~ 175°C (TJ)
Surface Mount
SOT-1205, 8-LFPAK56
LFPAK56D
SQJQ960EL-T1_GE3
Vishay Siliconix

MOSFET 2N-CH 60V 63A PPAK8X8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
  • Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1950pF @ 25V
  • Power - Max: 71W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® 8 x 8 Dual
  • Supplier Device Package: PowerPAK® 8 x 8 Dual
package: -
Voorraad12.630
-
60V
63A (Tc)
9mOhm @ 10A, 10V
2.5V @ 250µA
24nC @ 10V
1950pF @ 25V
71W
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® 8 x 8 Dual
PowerPAK® 8 x 8 Dual
DMN16M7UCA6-7
Diodes Incorporated

MOSFET BVDSS: 8V~24V X4-DSN2718-

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 19.2A (Ta)
  • Rds On (Max) @ Id, Vgs: 3.8mOhm @ 3A, 4.5V
  • Vgs(th) (Max) @ Id: 1.3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 45.4nC @ 6V
  • Input Capacitance (Ciss) (Max) @ Vds: 2333pF @ 6V
  • Power - Max: 1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, No Lead
  • Supplier Device Package: X4-DSN2718-6
package: -
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-
12V
19.2A (Ta)
3.8mOhm @ 3A, 4.5V
1.3V @ 1mA
45.4nC @ 6V
2333pF @ 6V
1W
-55°C ~ 150°C (TJ)
Surface Mount
6-SMD, No Lead
X4-DSN2718-6
MCH6631-TL-E
onsemi

MOSFET N/P-CH

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
CSD87503Q3E
Texas Instruments

MOSFET 2N-CH 30V 10A 8VSON

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
  • Rds On (Max) @ Id, Vgs: 13.5mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17.4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 15V
  • Power - Max: 15.6W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: 8-VSON (3.3x3.3)
package: -
Voorraad1.041
-
30V
10A (Ta)
13.5mOhm @ 6A, 10V
2.1V @ 250µA
17.4nC @ 4.5V
1020pF @ 15V
15.6W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerVDFN
8-VSON (3.3x3.3)