Pagina 138 - Transistors - FET's, MOSFET's - Arrays | Discrete halfgeleiderproducten | Heisener Electronics
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Transistors - FET's, MOSFET's - Arrays

Archief 5.684
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Afbeelding
Onderdeelnummer
Fabrikant
Omschrijving
package
Voorraad
Aantal
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
hot IRF8513PBF
Infineon Technologies

MOSFET 2N-CH 30V 8A/11A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8A, 11A
  • Rds On (Max) @ Id, Vgs: 15.5 mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id: 2.35V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 766pF @ 15V
  • Power - Max: 1.5W, 2.4W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad48.384
Logic Level Gate
30V
8A, 11A
15.5 mOhm @ 8A, 10V
2.35V @ 25µA
8.6nC @ 4.5V
766pF @ 15V
1.5W, 2.4W
-55°C ~ 175°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot AO4830L
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 80V 3.5A 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A
  • Rds On (Max) @ Id, Vgs: 75 mOhm @ 3.5A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 40V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad6.272
Standard
80V
3.5A
75 mOhm @ 3.5A, 10V
5V @ 250µA
13nC @ 10V
770pF @ 40V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
DMN2040LSD-13
Diodes Incorporated

MOSFET 2N-CH 20V 7A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 7A
  • Rds On (Max) @ Id, Vgs: 26 mOhm @ 6A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 562pF @ 10V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad6.080
Logic Level Gate
20V
7A
26 mOhm @ 6A, 4.5V
1.2V @ 250µA
-
562pF @ 10V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
FDC6000NZ_F077
Fairchild/ON Semiconductor

MOSFET 2N-CH 20V 7.3A 6-SSOP

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 7.3A
  • Rds On (Max) @ Id, Vgs: 20 mOhm @ 6.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 10V
  • Power - Max: 1.2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-SSOT Flat-lead, SuperSOT?-6 FLMP
  • Supplier Device Package: SuperSOT?-6 FLMP
package: 6-SSOT Flat-lead, SuperSOT?-6 FLMP
Voorraad5.648
Logic Level Gate
20V
7.3A
20 mOhm @ 6.5A, 4.5V
1.5V @ 250µA
11nC @ 4.5V
840pF @ 10V
1.2W
-55°C ~ 150°C (TJ)
Surface Mount
6-SSOT Flat-lead, SuperSOT?-6 FLMP
SuperSOT?-6 FLMP
hot FDMJ1023PZ
Fairchild/ON Semiconductor

MOSFET 2P-CH 20V 2.9A SC75

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.9A
  • Rds On (Max) @ Id, Vgs: 112 mOhm @ 2.9A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 10V
  • Power - Max: 700mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-WFDFN Exposed Pad
  • Supplier Device Package: SC-75, MicroFET
package: 6-WFDFN Exposed Pad
Voorraad16.980
Logic Level Gate
20V
2.9A
112 mOhm @ 2.9A, 4.5V
1V @ 250µA
6.5nC @ 4.5V
400pF @ 10V
700mW
-55°C ~ 150°C (TJ)
Surface Mount
6-WFDFN Exposed Pad
SC-75, MicroFET
hot NTMD6N02R2
ON Semiconductor

MOSFET 2N-CH 20V 3.92A 8SO

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.92A
  • Rds On (Max) @ Id, Vgs: 35 mOhm @ 6A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 16V
  • Power - Max: 730mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad6.048
Logic Level Gate
20V
3.92A
35 mOhm @ 6A, 4.5V
1.2V @ 250µA
20nC @ 4.5V
1100pF @ 16V
730mW
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
DMNH6021SPD-13
Diodes Incorporated

MOSFET 2NCH 60V 8.2A POWERDI

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 8.2A, 32A
  • Rds On (Max) @ Id, Vgs: 25 mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20.1nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1143pF @ 25V
  • Power - Max: 1.5W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: PowerDI5060-8
package: 8-PowerTDFN
Voorraad4.368
Standard
60V
8.2A, 32A
25 mOhm @ 15A, 10V
3V @ 250µA
20.1nC @ 10V
1143pF @ 25V
1.5W
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerTDFN
PowerDI5060-8
hot FC8V33030L
Panasonic Electronic Components

MOSFET 2N-CH 33V 6.5A WMINI8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 33V
  • Current - Continuous Drain (Id) @ 25°C: 6.5A
  • Rds On (Max) @ Id, Vgs: 20 mOhm @ 3.3A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 480µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 10V
  • Power - Max: 1W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: WMini8-F1
package: 8-SMD, Flat Lead
Voorraad82.764
Logic Level Gate
33V
6.5A
20 mOhm @ 3.3A, 10V
2.5V @ 480µA
3.8nC @ 4.5V
360pF @ 10V
1W
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
WMini8-F1
hot SI1016CX-T1-GE3
Vishay Siliconix

MOSFET N/P-CH 20V SC89-6

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 396 mOhm @ 500mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 10V
  • Power - Max: 220mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SC-89-6
package: SOT-563, SOT-666
Voorraad210.636
Logic Level Gate
20V
-
396 mOhm @ 500mA, 4.5V
1V @ 250µA
2nC @ 4.5V
43pF @ 10V
220mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SC-89-6
hot ZXMP3A16DN8TA
Diodes Incorporated

MOSFET 2P-CH 30V 4.2A 8-SOIC

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.2A
  • Rds On (Max) @ Id, Vgs: 45 mOhm @ 4.2A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 29.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1022pF @ 15V
  • Power - Max: 1.8W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad455.772
Logic Level Gate
30V
4.2A
45 mOhm @ 4.2A, 10V
1V @ 250µA (Min)
29.6nC @ 10V
1022pF @ 15V
1.8W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
hot SIA923EDJ-T1-GE3
Vishay Siliconix

MOSFET 2P-CH 20V 4.5A SC-70-6

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A
  • Rds On (Max) @ Id, Vgs: 54 mOhm @ 3.8A, 4.5V
  • Vgs(th) (Max) @ Id: 1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 7.8W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? SC-70-6 Dual
  • Supplier Device Package: PowerPAK? SC-70-6 Dual
package: PowerPAK? SC-70-6 Dual
Voorraad3.719.412
Logic Level Gate
20V
4.5A
54 mOhm @ 3.8A, 4.5V
1.4V @ 250µA
25nC @ 8V
-
7.8W
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SC-70-6 Dual
PowerPAK? SC-70-6 Dual
SMA5117
Sanken

MOSFET 6N-CH 250V 7A 12-SIP

  • FET Type: 6 N-Channel (3-Phase Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 7A
  • Rds On (Max) @ Id, Vgs: 250 mOhm @ 3.5A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 10V
  • Power - Max: 4W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 12-SIP, Exposed Tab
  • Supplier Device Package: 12-SIP
package: 12-SIP, Exposed Tab
Voorraad7.472
Standard
250V
7A
250 mOhm @ 3.5A, 10V
4V @ 1mA
-
850pF @ 10V
4W
150°C (TJ)
Through Hole
12-SIP, Exposed Tab
12-SIP
hot DMN4031SSD-13
Diodes Incorporated

MOSFET 2N-CH 40V 5.2A 8SO

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 5.2A
  • Rds On (Max) @ Id, Vgs: 31 mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 945pF @ 20V
  • Power - Max: 1.42W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad144.060
Logic Level Gate
40V
5.2A
31 mOhm @ 6A, 10V
3V @ 250µA
18.6nC @ 10V
945pF @ 20V
1.42W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot DMN3024LSD-13
Diodes Incorporated

MOSFET 2N-CH 30V 6.8A 8SO

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6.8A
  • Rds On (Max) @ Id, Vgs: 24 mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12.9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 608pF @ 15V
  • Power - Max: 1.8W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad378.504
Logic Level Gate
30V
6.8A
24 mOhm @ 7A, 10V
3V @ 250µA
12.9nC @ 10V
608pF @ 15V
1.8W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot SI4936BDY-T1-E3
Vishay Siliconix

MOSFET 2N-CH 30V 6.9A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6.9A
  • Rds On (Max) @ Id, Vgs: 35 mOhm @ 5.9A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 15V
  • Power - Max: 2.8W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad834.072
Logic Level Gate
30V
6.9A
35 mOhm @ 5.9A, 10V
3V @ 250µA
15nC @ 10V
530pF @ 15V
2.8W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot FDC6312P
Fairchild/ON Semiconductor

MOSFET 2P-CH 20V 2.3A SSOT-6

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.3A
  • Rds On (Max) @ Id, Vgs: 115 mOhm @ 2.3A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 467pF @ 10V
  • Power - Max: 700mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: SuperSOT?-6
package: SOT-23-6 Thin, TSOT-23-6
Voorraad438.288
Logic Level Gate
20V
2.3A
115 mOhm @ 2.3A, 4.5V
1.5V @ 250µA
7nC @ 4.5V
467pF @ 10V
700mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
SuperSOT?-6
IRF40H233XTMA1
Infineon Technologies

MOSFET 2N-CH 40V 8TDSON

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: PG-TDSON-8-900
package: -
Request a Quote
-
40V
-
-
-
-
-
-
-
Surface Mount
8-PowerTDFN
PG-TDSON-8-900
HP8M51TB1
Rohm Semiconductor

MOSFET N/P-CH 100V 4.5A 8HSOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 170mOhm @ 4.5A, 10V, 290mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V, 26.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 50V, 1430pF @ 50V
  • Power - Max: 3W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-HSOP
package: -
Voorraad7.344
-
100V
4.5A (Ta)
170mOhm @ 4.5A, 10V, 290mOhm @ 4.5A, 10V
2.5V @ 1mA
15nC @ 10V, 26.2nC @ 10V
600pF @ 50V, 1430pF @ 50V
3W (Ta)
150°C (TJ)
Surface Mount
8-PowerTDFN
8-HSOP
NTTFD4D0N04HLTWG
onsemi

MOSFET 2N-CH 40V 15A/60A 12WQFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 60A (Tc)
  • Rds On (Max) @ Id, Vgs: 4.5mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 20V
  • Power - Max: 1.7W (Ta), 26W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 12-PowerWQFN
  • Supplier Device Package: 12-WQFN (3.3x3.3)
package: -
Voorraad1.530
-
40V
15A (Ta), 60A (Tc)
4.5mOhm @ 10A, 10V
2V @ 50µA
18nC @ 10V
1100pF @ 20V
1.7W (Ta), 26W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
12-PowerWQFN
12-WQFN (3.3x3.3)
SP8M10FRATB
Rohm Semiconductor

MOSFET N/P-CH 30V 7A/4.5A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate, 4V Drive
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 4.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V, 56mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 5V, 8.5nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V, 850pF @ 10V
  • Power - Max: 2W (Ta)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
package: -
Voorraad3.543
Logic Level Gate, 4V Drive
30V
7A (Ta), 4.5A (Ta)
25mOhm @ 7A, 10V, 56mOhm @ 4.5A, 10V
2.5V @ 1mA
8.4nC @ 5V, 8.5nC @ 5V
600pF @ 10V, 850pF @ 10V
2W (Ta)
150°C
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
XP10A250YT
YAGEO XSEMI

MOSFET 2N-CH 100V 2.1A PMPAK

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta)
  • Rds On (Max) @ Id, Vgs: 250mOhm @ 2A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 50V
  • Power - Max: 2.5W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerDFN
  • Supplier Device Package: PMPAK® 3 x 3
package: -
Voorraad3.000
-
100V
2.1A (Ta)
250mOhm @ 2A, 10V
3V @ 250µA
8.8nC @ 10V
320pF @ 50V
2.5W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerDFN
PMPAK® 3 x 3
DMN3270UVT-7
Diodes Incorporated

MOSFET 2N-CH 30V 1.6A TSOT26

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
  • Rds On (Max) @ Id, Vgs: 270mOhm @ 650mA, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 40µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.07nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 161pF @ 15V
  • Power - Max: 760mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: TSOT-26
package: -
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30V
1.6A (Ta)
270mOhm @ 650mA, 4.5V
900mV @ 40µA
3.07nC @ 4.5V
161pF @ 15V
760mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
TSOT-26
FDS4559-F085
onsemi

MOSFET N/P-CH 60V 8SOIC

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A, 3.5A
  • Rds On (Max) @ Id, Vgs: 55mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
package: -
Request a Quote
Logic Level Gate
60V
4.5A, 3.5A
55mOhm @ 4.5A, 10V
3V @ 250µA
18nC @ 10V
650pF @ 25V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
UHB100SC12E1BC3N
Qorvo

1200V/100A,SIC,HALF-BRIDGE,G3, E

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
FW225-TL-E
onsemi

NCH+NCH 4V DRIVE SERIES

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
FDPC8011S-AU01
onsemi

MOSFET 2N-CH 25V 13A PWRCLIP-33

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 20A (Tc), 27A (Ta), 60A (Tc)
  • Rds On (Max) @ Id, Vgs: 6mOhm @ 13A, 10V, 1.8mOhm @ 27A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA, 2.2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V, 64nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 13V, 4335pF @ 13V
  • Power - Max: 800mW (Ta), 900mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerWDFN
  • Supplier Device Package: Powerclip-33
package: -
Voorraad9.000
-
25V
13A (Ta), 20A (Tc), 27A (Ta), 60A (Tc)
6mOhm @ 13A, 10V, 1.8mOhm @ 27A, 10V
2.2V @ 250µA, 2.2V @ 1mA
19nC @ 10V, 64nC @ 10V
1240pF @ 13V, 4335pF @ 13V
800mW (Ta), 900mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerWDFN
Powerclip-33
NTJD1155LT2G
onsemi

MOSFET N/P-CH 8V SC88

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 8V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 175mOhm @ 1.2A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 400mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-88/SC70-6/SOT-363
package: -
Voorraad9.420
-
8V
-
175mOhm @ 1.2A, 4.5V
1V @ 250µA
-
-
400mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-88/SC70-6/SOT-363
HUF7554S3S
Harris Corporation

MOSFET 80V 75A

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
Request a Quote
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-
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