Pagina 57 - Transistoren - Bipolair (BJT) - RF | Discrete halfgeleiderproducten | Heisener Electronics
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Transistoren - Bipolair (BJT) - RF

Archief 1.633
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Afbeelding
Onderdeelnummer
Fabrikant
Omschrijving
package
Voorraad
Aantal
Voltage - Collector Emitter Breakdown (Max)
Frequency - Transition
Noise Figure (dB Typ @ f)
Gain
Power - Max
DC Current Gain (hFE) (Min) @ Ic, Vce
Current - Collector (Ic) (Max)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
BFR 949T E6327
Infineon Technologies

TRANSISTOR RF BIP SC-75

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 9GHz
  • Noise Figure (dB Typ @ f): 1dB ~ 2.5dB @ 1GHz
  • Gain: 20dB
  • Power - Max: 250mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 6V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: PG-SC-75
package: SC-75, SOT-416
Voorraad7.104
10V
9GHz
1dB ~ 2.5dB @ 1GHz
20dB
250mW
100 @ 5mA, 6V
35mA
150°C (TJ)
Surface Mount
SC-75, SOT-416
PG-SC-75
MRF4427GR2
Microsemi Corporation

RF NPN TRANSISTOR

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: 20dB
  • Power - Max: 1.5W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 10mA, 5V
  • Current - Collector (Ic) (Max): 400mA
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad6.672
20V
-
-
20dB
1.5W
10 @ 10mA, 5V
400mA
-
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot 2SC5753-T2-A
CEL

RF TRANSISTOR NPN SOT-343F

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 6V
  • Frequency - Transition: 12GHz
  • Noise Figure (dB Typ @ f): 1.7dB @ 2GHz
  • Gain: 13.5dB
  • Power - Max: 205mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 30mA, 3V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-343F
  • Supplier Device Package: SOT-343F
package: SOT-343F
Voorraad14.856
6V
12GHz
1.7dB @ 2GHz
13.5dB
205mW
75 @ 30mA, 3V
100mA
150°C (TJ)
Surface Mount
SOT-343F
SOT-343F
UMIL25
Microsemi Corporation

TRANS RF BIPO 70W 3A 55HV2

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 33V
  • Frequency - Transition: 225MHz ~ 400MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 8.9db ~ 10dB
  • Power - Max: 70W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V
  • Current - Collector (Ic) (Max): 3A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55HV
  • Supplier Device Package: 55HV
package: 55HV
Voorraad6.064
33V
225MHz ~ 400MHz
-
8.9db ~ 10dB
70W
10 @ 500mA, 5V
3A
200°C (TJ)
Chassis Mount
55HV
55HV
UPA811T-A
CEL

RF DUAL TRANSISTORS NPN SOT-363

  • Transistor Type: 2 NPN (Dual)
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 1.9dB @ 2GHz
  • Gain: 7.5dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 3V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
package: 6-TSSOP, SC-88, SOT-363
Voorraad5.280
10V
8GHz
1.9dB @ 2GHz
7.5dB
200mW
80 @ 5mA, 3V
35mA
150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
KSC1730OBU
Fairchild/ON Semiconductor

TRANSISTOR NPN 15V 50MA TO-92

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 1.1GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 250mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 10V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
package: TO-226-3, TO-92-3 (TO-226AA)
Voorraad4.000
15V
1.1GHz
-
-
250mW
70 @ 5mA, 10V
50mA
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
KSC1393RTA
Fairchild/ON Semiconductor

TRANSISTOR NPN 30V 20MA TO-92

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Frequency - Transition: 700MHz
  • Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 200MHz
  • Gain: 20dB ~ 24dB
  • Power - Max: 250mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 10V
  • Current - Collector (Ic) (Max): 20mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
package: TO-226-3, TO-92-3 (TO-226AA)
Voorraad4.064
30V
700MHz
2dB ~ 3dB @ 200MHz
20dB ~ 24dB
250mW
40 @ 2mA, 10V
20mA
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
NE85619-T1-A
CEL

RF TRANSISTOR NPN SOT-523

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 4.5GHz
  • Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
  • Gain: 9dB
  • Power - Max: 100mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 7mA, 3V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-523
  • Supplier Device Package: SOT-523
package: SOT-523
Voorraad5.200
12V
4.5GHz
1.2dB @ 1GHz
9dB
100mW
80 @ 7mA, 3V
100mA
150°C (TJ)
Surface Mount
SOT-523
SOT-523
BFG480W,135
NXP

TRANS RF NPN 21GHZ 4.5V SOT343

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 4.5V
  • Frequency - Transition: 21GHz
  • Noise Figure (dB Typ @ f): 1.2dB ~ 1.8dB @ 900MHz ~ 2GHz
  • Gain: 16dB
  • Power - Max: 360mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 80mA, 2V
  • Current - Collector (Ic) (Max): 250mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: CMPAK-4
package: SC-82A, SOT-343
Voorraad5.680
4.5V
21GHz
1.2dB ~ 1.8dB @ 900MHz ~ 2GHz
16dB
360mW
40 @ 80mA, 2V
250mA
150°C (TJ)
Surface Mount
SC-82A, SOT-343
CMPAK-4
BFP182RE7764HTSA1
Infineon Technologies

TRANSISTOR RF NPN 12V SOT-143R

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
  • Gain: 22dB
  • Power - Max: 250mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 8V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-143R
  • Supplier Device Package: PG-SOT143R-4
package: SOT-143R
Voorraad6.496
12V
8GHz
0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
22dB
250mW
70 @ 10mA, 8V
35mA
150°C (TJ)
Surface Mount
SOT-143R
PG-SOT143R-4
MAPRST0912-350
M/A-Com Technology Solutions

TRANS NPN 350W 960MHZ-1215MHZ

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: 1.215GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 9.4dB
  • Power - Max: 350W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): 32.5A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: -
  • Supplier Device Package: -
package: -
Voorraad7.312
65V
1.215GHz
-
9.4dB
350W
-
32.5A
200°C (TJ)
Chassis Mount
-
-
MS2554
Microsemi Corporation

TRANS RF BIPO 600W 17.8A SO42

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: 1.025GHz ~ 1.15GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 6.2dB
  • Power - Max: 600W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 5V
  • Current - Collector (Ic) (Max): 17.8A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M218
  • Supplier Device Package: M218
package: M218
Voorraad4.688
65V
1.025GHz ~ 1.15GHz
-
6.2dB
600W
15 @ 1A, 5V
17.8A
200°C (TJ)
Chassis Mount
M218
M218
MS1076
Microsemi Corporation

TRANS RF BIPO 320W 16A M174

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 35V
  • Frequency - Transition: 30MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 12dB
  • Power - Max: 320W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 7A, 5V
  • Current - Collector (Ic) (Max): 16A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M174
  • Supplier Device Package: M174
package: M174
Voorraad5.360
35V
30MHz
-
12dB
320W
15 @ 7A, 5V
16A
200°C (TJ)
Chassis Mount
M174
M174
CPH6020-TL-E
ON Semiconductor

TRANS NPN 8V 0.15A CPH6

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 8V
  • Frequency - Transition: 16GHz
  • Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
  • Gain: 13.5dB
  • Power - Max: 700mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V
  • Current - Collector (Ic) (Max): 150mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: 6-CPH
package: SOT-23-6 Thin, TSOT-23-6
Voorraad6.864
8V
16GHz
1.2dB @ 1GHz
13.5dB
700mW
60 @ 50mA, 5V
150mA
150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
6-CPH
MMBTH10M3T5G
ON Semiconductor

TRANS NPN VHF/UHF 25V SOT-723

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Frequency - Transition: 650MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 265mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-723
  • Supplier Device Package: SOT-723
package: SOT-723
Voorraad3.392
25V
650MHz
-
-
265mW
60 @ 4mA, 10V
-
-55°C ~ 150°C (TJ)
Surface Mount
SOT-723
SOT-723
BFR360FH6327XTSA1
Infineon Technologies

TRANS RF NPN 6V 35MA TSFP-3

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 9V
  • Frequency - Transition: 14GHz
  • Noise Figure (dB Typ @ f): 1dB @ 1.8GHz
  • Gain: 15.5dB
  • Power - Max: 210mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 15mA, 3V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-723
  • Supplier Device Package: PG-TSFP-3
package: SOT-723
Voorraad6.128
9V
14GHz
1dB @ 1.8GHz
15.5dB
210mW
90 @ 15mA, 3V
35mA
150°C (TJ)
Surface Mount
SOT-723
PG-TSFP-3
hot MRF317
M/A-Com Technology Solutions

TRANS RF NPN 35V 12A 316-01

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 35V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: 10dB
  • Power - Max: 100W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V
  • Current - Collector (Ic) (Max): 12A
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Package / Case: 316-01
  • Supplier Device Package: 316-01, STYLE 1
package: 316-01
Voorraad5.504
35V
-
-
10dB
100W
10 @ 5A, 5V
12A
-
Chassis Mount
316-01
316-01, STYLE 1
hot MMBT918
Fairchild/ON Semiconductor

TRANSISTOR RF NPN SOT-23

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 600MHz
  • Noise Figure (dB Typ @ f): 6dB @ 60MHz
  • Gain: 15dB
  • Power - Max: 225mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3mA, 1V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3 (TO-236)
package: TO-236-3, SC-59, SOT-23-3
Voorraad69.672
15V
600MHz
6dB @ 60MHz
15dB
225mW
20 @ 3mA, 1V
50mA
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
MPSH17RLRA
onsemi

SMALL SIGNAL BIPOLAR TRANSISTOR

  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
82092H
Microsemi Corporation

TRANSISTOR

  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
MRF426
MACOM Technology Solutions

TRANS RF NPN 35V 3A 211-07

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 35V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: 25dB
  • Power - Max: 25W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
  • Current - Collector (Ic) (Max): 3A
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Package / Case: 211-07
  • Supplier Device Package: 211-07, STYLE 1
package: -
Request a Quote
35V
-
-
25dB
25W
10 @ 1A, 5V
3A
-
Chassis Mount
211-07
211-07, STYLE 1
2SC3585-A
CEL

RF TRANS NPN 10V 10GHZ SOT23

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 10GHz
  • Noise Figure (dB Typ @ f): 1.8dB @ 2GHz
  • Gain: 10dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 6V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: -
package: -
Request a Quote
10V
10GHz
1.8dB @ 2GHz
10dB
200mW
50 @ 10mA, 6V
35mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
-
2SC3356-A
CEL

RF TRANS NPN 12V 7GHZ SOT23

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 7GHz
  • Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
  • Gain: 11.5dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: -
package: -
Request a Quote
12V
7GHz
1.1dB @ 1GHz
11.5dB
200mW
50 @ 20mA, 10V
100mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
-
2SC5751-A
CEL

RF TRANS NPN 6V 15GHZ SOT343F

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 6V
  • Frequency - Transition: 15GHz
  • Noise Figure (dB Typ @ f): 1.7dB @ 2GHz
  • Gain: 16dB
  • Power - Max: 205mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 20mA, 3V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-343F
  • Supplier Device Package: -
package: -
Request a Quote
6V
15GHz
1.7dB @ 2GHz
16dB
205mW
75 @ 20mA, 3V
50mA
150°C (TJ)
Surface Mount
SOT-343F
-
66099
Microsemi Corporation

RF POWER TRANSISTOR

  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
MS2554A
Microsemi Corporation

RF TRANS NPN 65V 1.15GHZ M216

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: 1.025GHz ~ 1.15GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 6.2dB
  • Power - Max: 600W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 5V
  • Current - Collector (Ic) (Max): 17.8A
  • Operating Temperature: 200°C
  • Mounting Type: Chassis Mount
  • Package / Case: M216
  • Supplier Device Package: M216
package: -
Request a Quote
65V
1.025GHz ~ 1.15GHz
-
6.2dB
600W
15 @ 1A, 5V
17.8A
200°C
Chassis Mount
M216
M216
CP302-MPSH10-CT20
Central Semiconductor Corp

RF TRANS NPNUHF/VHF

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Frequency - Transition: 650MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 350mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
package: -
Request a Quote
25V
650MHz
-
-
350mW
60 @ 4mA, 10V
-
-65°C ~ 150°C (TJ)
Surface Mount
Die
Die
BFP640E6327
Infineon Technologies

RF BIPOLAR TRANSISTOR

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 4.5V
  • Frequency - Transition: 40GHz
  • Noise Figure (dB Typ @ f): 0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz
  • Gain: 24dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 30mA, 3V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: PG-SOT343-4
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4.5V
40GHz
0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz
24dB
200mW
110 @ 30mA, 3V
50mA
150°C (TJ)
Surface Mount
SC-82A, SOT-343
PG-SOT343-4