Pagina 54 - Transistoren - Bipolair (BJT) - RF | Discrete halfgeleiderproducten | Heisener Electronics
Contacteer ons
SalesDept@heisener.com 86-755-83210559 x831
Language Translation

* Please refer to the English Version as our Official Version.

Transistoren - Bipolair (BJT) - RF

Archief 1.633
Pagina  54/59
Afbeelding
Onderdeelnummer
Fabrikant
Omschrijving
package
Voorraad
Aantal
Voltage - Collector Emitter Breakdown (Max)
Frequency - Transition
Noise Figure (dB Typ @ f)
Gain
Power - Max
DC Current Gain (hFE) (Min) @ Ic, Vce
Current - Collector (Ic) (Max)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
NE46134-T1-QS-AZ
CEL

SAME AS 2SC4536 NPN SILICON MEDI

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 5.5GHz
  • Noise Figure (dB Typ @ f): 1.5dB ~ 2dB @ 500MHz ~ 1GHz
  • Gain: 7dB
  • Power - Max: 2W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 10V
  • Current - Collector (Ic) (Max): 250mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89
package: TO-243AA
Voorraad5.152
15V
5.5GHz
1.5dB ~ 2dB @ 500MHz ~ 1GHz
7dB
2W
40 @ 50mA, 10V
250mA
150°C (TJ)
Surface Mount
TO-243AA
SOT-89
hot 2SA1978-T1B-A
CEL

RF TRANSISTOR PNP SOT-23

  • Transistor Type: PNP
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 5.5GHz
  • Noise Figure (dB Typ @ f): 2dB @ 1GHz
  • Gain: 10dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 15mA, 10V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
package: TO-236-3, SC-59, SOT-23-3
Voorraad36.000
12V
5.5GHz
2dB @ 1GHz
10dB
200mW
20 @ 15mA, 10V
50mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
NE68030-T1-R44-A
CEL

RF TRANSISTOR NPN SOT-323

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 10GHz
  • Noise Figure (dB Typ @ f): 1.9dB @ 2GHz
  • Gain: 9.4dB
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 3V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323
package: SC-70, SOT-323
Voorraad3.344
10V
10GHz
1.9dB @ 2GHz
9.4dB
150mW
80 @ 5mA, 3V
35mA
150°C (TJ)
Surface Mount
SC-70, SOT-323
SOT-323
PN5179_D75Z
Fairchild/ON Semiconductor

TRANS RF NPN 12V 50MA TO-92

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 2GHz
  • Noise Figure (dB Typ @ f): 5dB @ 200MHz
  • Gain: 15dB
  • Power - Max: 350mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Voorraad2.864
12V
2GHz
5dB @ 200MHz
15dB
350mW
25 @ 3mA, 1V
50mA
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
hot 2SC3931GCL
Panasonic Electronic Components

TRANS NPN 20VCEO 15MA S-MINI 3P

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 650MHz
  • Noise Figure (dB Typ @ f): 3.3dB @ 100MHz
  • Gain: 24dB
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 1mA, 6V
  • Current - Collector (Ic) (Max): 15mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-85
  • Supplier Device Package: SMini3-F2
package: SC-85
Voorraad4.178.364
20V
650MHz
3.3dB @ 100MHz
24dB
150mW
65 @ 1mA, 6V
15mA
150°C (TJ)
Surface Mount
SC-85
SMini3-F2
KSC1393YTA
Fairchild/ON Semiconductor

TRANSISTOR NPN 30V 20MA TO-92

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Frequency - Transition: 700MHz
  • Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 200MHz
  • Gain: 20dB ~ 24dB
  • Power - Max: 250mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 2mA, 10V
  • Current - Collector (Ic) (Max): 20mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Voorraad4.752
30V
700MHz
2dB ~ 3dB @ 200MHz
20dB ~ 24dB
250mW
90 @ 2mA, 10V
20mA
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
SD1405
STMicroelectronics

TRANS NPN RF MCRWAVE HF SSB M174

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 18V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: 13dB
  • Power - Max: 270W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 5V
  • Current - Collector (Ic) (Max): 20A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: M174
  • Supplier Device Package: M174
package: M174
Voorraad3.232
18V
-
-
13dB
270W
20 @ 5A, 5V
20A
200°C (TJ)
Surface Mount
M174
M174
2N5770_D74Z
Fairchild/ON Semiconductor

TRANSISTOR RF NPN 15V 50MA TO-92

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): 6dB @ 60MHz
  • Gain: 15dB
  • Power - Max: 350mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 8mA, 10V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
package: TO-226-3, TO-92-3 (TO-226AA)
Voorraad5.808
15V
-
6dB @ 60MHz
15dB
350mW
50 @ 8mA, 10V
50mA
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
hot NE68530-T1-A
CEL

TRANSISTOR NPN 2GHZ SOT-323

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 6V
  • Frequency - Transition: 12GHz
  • Noise Figure (dB Typ @ f): 1.5dB ~ 2.5dB @ 2GHz
  • Gain: 7dB
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 3V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323
package: SC-70, SOT-323
Voorraad36.000
6V
12GHz
1.5dB ~ 2.5dB @ 2GHz
7dB
150mW
75 @ 10mA, 3V
30mA
150°C (TJ)
Surface Mount
SC-70, SOT-323
SOT-323
NE68139-T1
CEL

TRANS NPN 1GHZ SOT-143

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 9GHz
  • Noise Figure (dB Typ @ f): 1.2dB ~ 2dB @ 1GHz
  • Gain: 13.5dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 7mA, 3V
  • Current - Collector (Ic) (Max): 65mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: SOT-143
package: TO-253-4, TO-253AA
Voorraad3.840
10V
9GHz
1.2dB ~ 2dB @ 1GHz
13.5dB
200mW
50 @ 7mA, 3V
65mA
150°C (TJ)
Surface Mount
TO-253-4, TO-253AA
SOT-143
NE68119-T1
CEL

TRANS NPN 1GHZ SMD

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 7GHz
  • Noise Figure (dB Typ @ f): 1.4dB ~ 1.8dB @ 1GHz ~ 2GHz
  • Gain: 10dB ~ 14dB
  • Power - Max: 100mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 7mA, 3V
  • Current - Collector (Ic) (Max): 65mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-523
  • Supplier Device Package: 3-SuperMiniMold (19)
package: SOT-523
Voorraad3.488
10V
7GHz
1.4dB ~ 1.8dB @ 1GHz ~ 2GHz
10dB ~ 14dB
100mW
80 @ 7mA, 3V
65mA
150°C (TJ)
Surface Mount
SOT-523
3-SuperMiniMold (19)
NE68019-T1
CEL

TRANS NPN 2GHZ SMD

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 10GHz
  • Noise Figure (dB Typ @ f): 1.7dB ~ 1.9dB @ 1GHz ~ 2GHz
  • Gain: 9.6dB ~ 13.5dB
  • Power - Max: 100mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 3V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-523
  • Supplier Device Package: SOT-523
package: SOT-523
Voorraad7.360
10V
10GHz
1.7dB ~ 1.9dB @ 1GHz ~ 2GHz
9.6dB ~ 13.5dB
100mW
80 @ 5mA, 3V
35mA
150°C (TJ)
Surface Mount
SOT-523
SOT-523
BFG520/XR,215
NXP

TRANS RF NPN 9GHZ 15V SOT143

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 9GHz
  • Noise Figure (dB Typ @ f): 1.1dB ~ 2.1dB @ 900MHz
  • Gain: -
  • Power - Max: 300mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 6V
  • Current - Collector (Ic) (Max): 70mA
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-143R
  • Supplier Device Package: SOT-143R
package: SOT-143R
Voorraad7.056
15V
9GHz
1.1dB ~ 2.1dB @ 900MHz
-
300mW
60 @ 20mA, 6V
70mA
175°C (TJ)
Surface Mount
SOT-143R
SOT-143R
BFP720FESDH6327XTSA1
Infineon Technologies

TRANS RF NPN 45GHZ 4.7V TSFP-4

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 4.7V
  • Frequency - Transition: 45GHz
  • Noise Figure (dB Typ @ f): 0.5dB ~ 1.3dB @ 150MHz ~ 10GHz
  • Gain: 10dB ~ 29dB
  • Power - Max: 100mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 15mA, 3V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Flat Leads
  • Supplier Device Package: 4-TSFP
package: 4-SMD, Flat Leads
Voorraad6.592
4.7V
45GHz
0.5dB ~ 1.3dB @ 150MHz ~ 10GHz
10dB ~ 29dB
100mW
160 @ 15mA, 3V
30mA
150°C (TJ)
Surface Mount
4-SMD, Flat Leads
4-TSFP
AT-32011-TR2G
Broadcom Limited

TRANS NPN BIPO 5.5V 32MA SOT-143

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5.5V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): 1dB ~ 1.3dB @ 900MHz
  • Gain: 12.5dB ~ 14dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 2.7V
  • Current - Collector (Ic) (Max): 32mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: SOT-143
package: TO-253-4, TO-253AA
Voorraad7.328
5.5V
-
1dB ~ 1.3dB @ 900MHz
12.5dB ~ 14dB
200mW
70 @ 2mA, 2.7V
32mA
150°C (TJ)
Surface Mount
TO-253-4, TO-253AA
SOT-143
BFU520WF
NXP

TRANS RF NPN 12V 30MA SOT-323

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 10GHz
  • Noise Figure (dB Typ @ f): 1dB @ 1.8GHz
  • Gain: 13dB
  • Power - Max: 450mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 8V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323-3
package: SC-70, SOT-323
Voorraad7.792
12V
10GHz
1dB @ 1.8GHz
13dB
450mW
60 @ 5mA, 8V
30mA
-40°C ~ 150°C (TJ)
Surface Mount
SC-70, SOT-323
SOT-323-3
NSVF6003SB6T1G
ON Semiconductor

RF TRANSISTOR

  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
Voorraad6.288
-
-
-
-
-
-
-
-
-
-
-
2SC5488A-TL-H
ON Semiconductor

TRANS NPN BIPO VHF-UHF SSFP

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 7GHz
  • Noise Figure (dB Typ @ f): 1dB @ 1GHz
  • Gain: 12dB
  • Power - Max: 100mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 5V
  • Current - Collector (Ic) (Max): 70mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, Flat Leads
  • Supplier Device Package: 3-SSFP
package: 3-SMD, Flat Leads
Voorraad5.952
10V
7GHz
1dB @ 1GHz
12dB
100mW
90 @ 20mA, 5V
70mA
150°C (TJ)
Surface Mount
3-SMD, Flat Leads
3-SSFP
BFP 182 E7764
Infineon Technologies

TRANSISTOR NPN RF 12V SOT-143

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
  • Gain: 22dB
  • Power - Max: 250mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 8V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: PG-SOT143-4
package: TO-253-4, TO-253AA
Voorraad7.120
12V
8GHz
0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
22dB
250mW
70 @ 10mA, 8V
35mA
150°C (TJ)
Surface Mount
TO-253-4, TO-253AA
PG-SOT143-4
2SC5632G0L
Panasonic Electronic Components

TRANS NPN 8VCEO 50MA SMINI-3

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 8V
  • Frequency - Transition: 1.1GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2mA, 4V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-85
  • Supplier Device Package: SMini3-F2
package: SC-85
Voorraad3.472
8V
1.1GHz
-
-
150mW
100 @ 2mA, 4V
50mA
150°C (TJ)
Surface Mount
SC-85
SMini3-F2
UPA804T-T1-A
Renesas Electronics Corporation

SMALL SIGNAL BIPOLAR TRANSISTOR

  • Transistor Type: 2 NPN (Dual)
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 5GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 5dB
  • Power - Max: 120mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
  • Current - Collector (Ic) (Max): 60mA
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: 6-SuperMiniMold
package: -
Request a Quote
12V
5GHz
-
5dB
120mW
60 @ 5mA, 5V
60mA
125°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
6-SuperMiniMold
NE85633-A
CEL

RF TRANS NPN 12V 7GHZ SOT23

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 7GHz
  • Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
  • Gain: 11.5dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: -
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: -
package: -
Request a Quote
12V
7GHz
1.1dB @ 1GHz
11.5dB
200mW
50 @ 20mA, 10V
100mA
150°C (TJ)
-
TO-236-3, SC-59, SOT-23-3
-
MS2248
Microsemi Corporation

RF POWER TRANSISTOR

  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
SD1332-05H
Microsemi Corporation

RF TRANS NPN 15V 5.5GHZ M150

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 5.5GHz
  • Noise Figure (dB Typ @ f): 2.5dB @ 1GHz
  • Gain: 17dB
  • Power - Max: 180W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 14mA, 10V
  • Current - Collector (Ic) (Max): 30A
  • Operating Temperature: 200°C
  • Mounting Type: Surface Mount
  • Package / Case: M150
  • Supplier Device Package: M150
package: -
Request a Quote
15V
5.5GHz
2.5dB @ 1GHz
17dB
180W
50 @ 14mA, 10V
30A
200°C
Surface Mount
M150
M150
2SC2839E-SPA-AC
onsemi

NPN EPITAXIAL PLANAR SILICON

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 320MHz
  • Noise Figure (dB Typ @ f): 3dB @ 100MHz
  • Gain: 25dB
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 1mA, 6V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: 3-SIP
  • Supplier Device Package: 3-SPA
package: -
Request a Quote
20V
320MHz
3dB @ 100MHz
25dB
150mW
60 @ 1mA, 6V
30mA
-
Through Hole
3-SIP
3-SPA
2SC4957-A
CEL

RF TRANS NPN 6V 12GHZ SOT143

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 6V
  • Frequency - Transition: 12GHz
  • Noise Figure (dB Typ @ f): 1.5dB @ 2GHz
  • Gain: 11dB
  • Power - Max: 180mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 3V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: -
package: -
Request a Quote
6V
12GHz
1.5dB @ 2GHz
11dB
180mW
75 @ 10mA, 3V
30mA
150°C (TJ)
Surface Mount
TO-253-4, TO-253AA
-
NTE278
NTE Electronics, Inc

RF TRANS NPN 20V 1.2GHZ TO39

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 1.2GHz
  • Noise Figure (dB Typ @ f): 3dB @ 200MHz
  • Gain: 11dB
  • Power - Max: 1W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 15V
  • Current - Collector (Ic) (Max): 400mA
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39
package: -
Request a Quote
20V
1.2GHz
3dB @ 200MHz
11dB
1W
40 @ 50mA, 15V
400mA
-
Through Hole
TO-205AD, TO-39-3 Metal Can
TO-39
MS2321A
Microsemi Corporation

RF POWER TRANSISTOR

  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-