Transistoren - Bipolair (BJT) - RF

BFR92WH6327XTSA1

Infineon Technologies

TRANS RF NPN 15V 45MA SOT323

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 15V
• Frequency - Transition: 5GHz
• Noise Figure (dB Typ @ f): 1.4dB ~ 2dB @ 900MHz ~ 1.8GHz
• Gain: 11.5dB ~ 17dB
• Power - Max: 280mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V
• Current - Collector (Ic) (Max): 45mA
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: PG-SOT323-3

package: SC-70, SOT-323

BFP460E6433HTMA1

Infineon Technologies

TRANS RF NPN 4.5V 50MA SOT343

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 5.8V
• Frequency - Transition: 22GHz
• Noise Figure (dB Typ @ f): 0.7dB ~ 1.2dB @ 100MHz ~ 3GHz
• Gain: 12.5dB ~ 26.5dB
• Power - Max: 230mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 3V
• Current - Collector (Ic) (Max): 70mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-82A, SOT-343
• Supplier Device Package: PG-SOT343-4

package: SC-82A, SOT-343

BFP620E7764BTSA1

Infineon Technologies

TRANSISTOR RF NPN 2.3V SOT-343

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 2.8V
• Frequency - Transition: 65GHz
• Noise Figure (dB Typ @ f): 0.7dB ~ 1.3dB @ 1.8GHz ~ 6GHz
• Gain: 21.5dB
• Power - Max: 185mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 50mA, 1.5V
• Current - Collector (Ic) (Max): 80mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-82A, SOT-343
• Supplier Device Package: PG-SOT343-4

package: SC-82A, SOT-343

BFP 540F E6327

Infineon Technologies

TRANSISTOR RF NPN 4.5V TSFP-4

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 5V
• Frequency - Transition: 30GHz
• Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 1.8GHz
• Gain: 20dB
• Power - Max: 250mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 3.5V
• Current - Collector (Ic) (Max): 80mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 4-SMD, Flat Leads
• Supplier Device Package: 4-TSFP

package: 4-SMD, Flat Leads

BFS 360L6 E6327

Infineon Technologies

TRANSISTOR NPN 6V 35MA TSLP-6

• Transistor Type: 2 NPN (Dual)
• Voltage - Collector Emitter Breakdown (Max): 9V
• Frequency - Transition: 14GHz
• Noise Figure (dB Typ @ f): 1dB ~ 1.5dB @ 1.8GHz ~ 3GHz
• Gain: 10dB ~ 14.5dB
• Power - Max: 210mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 3V
• Current - Collector (Ic) (Max): 35mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-XFDFN
• Supplier Device Package: PG-TSLP-6

package: 6-XFDFN

BFP520E6327BTSA1

Infineon Technologies

TRANS NPN RF 2.5V SOT-343

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 3.5V
• Frequency - Transition: 45GHz
• Noise Figure (dB Typ @ f): 0.95dB @ 1.8GHz
• Gain: 24dB
• Power - Max: 100mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 20mA, 2V
• Current - Collector (Ic) (Max): 40mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-82A, SOT-343
• Supplier Device Package: PG-SOT343-4

package: SC-82A, SOT-343

BFP405E6327BTSA1

Infineon Technologies

TRANS NPN RF 4.5V SOT-343

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 5V
• Frequency - Transition: 25GHz
• Noise Figure (dB Typ @ f): 1.25dB @ 1.8GHz
• Gain: 23dB
• Power - Max: 75mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 4V
• Current - Collector (Ic) (Max): 25mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-82A, SOT-343
• Supplier Device Package: PG-SOT343-4

package: SC-82A, SOT-343

MRF553GT

Microsemi Corporation

TRANS NPN 16V 500MA POWERMACRO

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 16V
• Frequency - Transition: 175MHz
• Noise Figure (dB Typ @ f): -
• Gain: 11.5dB
• Power - Max: 3W
• DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 5V
• Current - Collector (Ic) (Max): 500mA
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: Power Macro
• Supplier Device Package: Power Macro

package: Power Macro

2SA1977-T1B-A

CEL

RF TRANSISTOR PNP SOT-23

• Transistor Type: PNP
• Voltage - Collector Emitter Breakdown (Max): 12V
• Frequency - Transition: 8.5GHz
• Noise Figure (dB Typ @ f): 1.5dB @ 1GHz
• Gain: 12dB
• Power - Max: 200mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 8V
• Current - Collector (Ic) (Max): 50mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23

package: TO-236-3, SC-59, SOT-23-3

BLS3135-20,114

NXP

TRANSISTOR RF POWER SOT422A

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 75V
• Frequency - Transition: 3.5GHz
• Noise Figure (dB Typ @ f): -
• Gain: 8dB
• Power - Max: 80W
• DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1.5A, 5V
• Current - Collector (Ic) (Max): 2A
• Operating Temperature: 200°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-422A
• Supplier Device Package: CDFM2

package: SOT-422A

NE68530-A

CEL

TRANSISTOR NPN 2GHZ SOT-323

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 6V
• Frequency - Transition: 12GHz
• Noise Figure (dB Typ @ f): 1.5dB ~ 2.5dB @ 2GHz
• Gain: 7dB
• Power - Max: 150mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 3V
• Current - Collector (Ic) (Max): 30mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: SOT-323

package: SC-70, SOT-323

KSC2756RMTF

Fairchild/ON Semiconductor

TRANSISTOR NPN 20V 30MA SOT-23

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 20V
• Frequency - Transition: 850MHz
• Noise Figure (dB Typ @ f): 6.5dB @ 200MHz
• Gain: 15dB ~ 23dB
• Power - Max: 150mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
• Current - Collector (Ic) (Max): 30mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3 (TO-236)

package: TO-236-3, SC-59, SOT-23-3

BFP405H6740XTSA1

Infineon Technologies

TRANS RF NPN 25GHZ 4.5V SOT343

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 5V
• Frequency - Transition: 25GHz
• Noise Figure (dB Typ @ f): 1.25dB @ 1.8GHz
• Gain: 23dB
• Power - Max: 75mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 4V
• Current - Collector (Ic) (Max): 25mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-82A, SOT-343
• Supplier Device Package: SOT-343

package: SC-82A, SOT-343

MS2209

Microsemi Corporation

TRANS RF BIPO 220W 7A M218

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 65V
• Frequency - Transition: 225MHz
• Noise Figure (dB Typ @ f): -
• Gain: 8.4dB
• Power - Max: 220W
• DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 2A, 5V
• Current - Collector (Ic) (Max): 7A
• Operating Temperature: 200°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: M218
• Supplier Device Package: M218

package: M218

2N2857

Fairchild/Micross Components

DIE RF TRANS NPN 15V

• Transistor Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Frequency - Transition: -
• Noise Figure (dB Typ @ f): -
• Gain: -
• Power - Max: -
• DC Current Gain (hFE) (Min) @ Ic, Vce: -
• Current - Collector (Ic) (Max): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

package: -

BFS17NQTA

Diodes Incorporated

TRANSISTOR RF NPN SOT23-3

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 11V
• Frequency - Transition: 3.2GHz
• Noise Figure (dB Typ @ f): -
• Gain: -
• Power - Max: 310mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 10V
• Current - Collector (Ic) (Max): 50mA
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23

package: TO-236-3, SC-59, SOT-23-3

AT-30533-BLKG

Broadcom Limited

TRANS NPN BIPO 5.5V 8MA SOT-23

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 5.5V
• Frequency - Transition: -
• Noise Figure (dB Typ @ f): 1.1dB ~ 1.4dB @ 900MHz
• Gain: 11dB ~ 13dB
• Power - Max: 100mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 2.7V
• Current - Collector (Ic) (Max): 8mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23

package: TO-236-3, SC-59, SOT-23-3

2SC5227A-4-TB-E

ON Semiconductor

TRANS NPN BIPO VHF-UHF CP

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 10V
• Frequency - Transition: 7GHz
• Noise Figure (dB Typ @ f): 1dB @ 1GHz
• Gain: 12dB
• Power - Max: 200mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 5V
• Current - Collector (Ic) (Max): 70mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: 3-CP

package: TO-236-3, SC-59, SOT-23-3

BFU910FX

NXP

TRANS NPN WIDEBAND DFP4

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 9.5V
• Frequency - Transition: -
• Noise Figure (dB Typ @ f): -
• Gain: 13.5dB
• Power - Max: 300mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: -
• Current - Collector (Ic) (Max): 15mA
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-343F
• Supplier Device Package: SOT-343F

package: SOT-343F

BFU590GX

NXP

TRANS RF NPN 12V 200MA SOT223-4

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 12V
• Frequency - Transition: 8.5GHz
• Noise Figure (dB Typ @ f): -
• Gain: 8dB
• Power - Max: 2W
• DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 80mA, 8V
• Current - Collector (Ic) (Max): 200mA
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-261-4, TO-261AA
• Supplier Device Package: SOT-223

package: TO-261-4, TO-261AA

2SC5890FS-TL-E

Renesas Electronics Corporation

SMALL SIGNAL BIPOLAR TRANSTR NPN

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 12V
• Frequency - Transition: 7.8GHz
• Noise Figure (dB Typ @ f): 1dB @ 900MHz
• Gain: 12dB
• Power - Max: 700mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 20mA, 5V
• Current - Collector (Ic) (Max): 75mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: 3-MPAK

package: -

Request a Quote

MPSH81-TRE

Central Semiconductor Corp

RF TRANS PNP 20V 600MHZ SOT23

• Transistor Type: PNP
• Voltage - Collector Emitter Breakdown (Max): 20V
• Frequency - Transition: 600MHz
• Noise Figure (dB Typ @ f): -
• Gain: -
• Power - Max: -
• DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
• Current - Collector (Ic) (Max): 50mA
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)
• Supplier Device Package: TO-92-3

package: -

Request a Quote

2SC6024-TL-E

onsemi

BIP NPN 35MA 3.5V FT=14G

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 3.5V
• Frequency - Transition: 14GHz
• Noise Figure (dB Typ @ f): 1.2dB @ 2GHz
• Gain: 9dB ~ 10.5dB
• Power - Max: 120mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 15mA, 3V
• Current - Collector (Ic) (Max): 35mA
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: 3-SMD, Flat Lead
• Supplier Device Package: 3-SSFP

package: -

Request a Quote

MS2244

Microsemi Corporation

RF POWER TRANSISTOR

• Transistor Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Frequency - Transition: -
• Noise Figure (dB Typ @ f): -
• Gain: -
• Power - Max: -
• DC Current Gain (hFE) (Min) @ Ic, Vce: -
• Current - Collector (Ic) (Max): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

package: -

Request a Quote

2N3866-PBFREE

Central Semiconductor Corp

RF TRANS NPN 30V 500MHZ TO39

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 30V
• Frequency - Transition: 500MHz
• Noise Figure (dB Typ @ f): -
• Gain: -
• Power - Max: 5W
• DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 50mA, 5V
• Current - Collector (Ic) (Max): 400mA
• Operating Temperature: -65°C ~ 200°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-205AD, TO-39-3 Metal Can
• Supplier Device Package: TO-39

package: -

Request a Quote

2SC4094-A

CEL

RF TRANS NPN 10V 9GHZ SOT143

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 10V
• Frequency - Transition: 9GHz
• Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
• Gain: 17dB ~ 23dB
• Power - Max: 200mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 8V
• Current - Collector (Ic) (Max): 65mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-253-4, TO-253AA
• Supplier Device Package: -

package: -

Request a Quote

MPSH10-BP

Micro Commercial Co

TRANSISTOR TO-92

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 25V
• Frequency - Transition: 650MHz
• Noise Figure (dB Typ @ f): -
• Gain: -
• Power - Max: 350mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
• Current - Collector (Ic) (Max): 50mA
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)
• Supplier Device Package: TO-92

package: -

Request a Quote

2SD438F-MP-AE

onsemi

2SD438 - BIPOLAR NPN TRANSISTOR,

• Transistor Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Frequency - Transition: -
• Noise Figure (dB Typ @ f): -
• Gain: -
• Power - Max: -
• DC Current Gain (hFE) (Min) @ Ic, Vce: -
• Current - Collector (Ic) (Max): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

package: -

Request a Quote