Pagina 368 - Diodes - Gelijkrichters - Single | Discrete halfgeleiderproducten | Heisener Electronics
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Diodes - Gelijkrichters - Single

Archief 52.788
Pagina  368/1.886
Afbeelding
Onderdeelnummer
Fabrikant
Omschrijving
package
Voorraad
Aantal
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
hot VS-MBRD340TRPBF
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 3A DPAK

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 600mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200µA @ 40V
  • Capacitance @ Vr, F: 189pF @ 5V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-PAK (TO-252AA)
  • Operating Temperature - Junction: -40°C ~ 150°C
package: TO-252-3, DPak (2 Leads + Tab), SC-63
Voorraad30.000
40V
3A
600mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 40V
189pF @ 5V, 1MHz
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-PAK (TO-252AA)
-40°C ~ 150°C
QRS1440T30
Powerex Inc.

DIODE MODULE 1.4KV 249A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1400V
  • Current - Average Rectified (Io): 249A
  • Voltage - Forward (Vf) (Max) @ If: 3.8V @ 400A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 300ns
  • Current - Reverse Leakage @ Vr: 2mA @ 1400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
  • Operating Temperature - Junction: -
package: Module
Voorraad4.816
1400V
249A
3.8V @ 400A
Fast Recovery =< 500ns, > 200mA (Io)
300ns
2mA @ 1400V
-
Chassis Mount
Module
Module
-
D121K20B
Infineon Technologies Industrial Power and Controls Americas

RECTIFIER DIODE 2000V 360A

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
package: -
Voorraad6.496
-
-
-
-
-
-
-
-
-
-
-
1N3276R
Powerex Inc.

DIODE GEN PURP 1.6KV 160A DO205

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600V
  • Current - Average Rectified (Io): 160A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 12mA @ 1600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-205AB, DO-9, Stud
  • Supplier Device Package: DO-205AB, DO-9
  • Operating Temperature - Junction: -65°C ~ 175°C
package: DO-205AB, DO-9, Stud
Voorraad4.080
1600V
160A
-
Standard Recovery >500ns, > 200mA (Io)
-
12mA @ 1600V
-
Chassis, Stud Mount
DO-205AB, DO-9, Stud
DO-205AB, DO-9
-65°C ~ 175°C
VS-T70HF10
Vishay Semiconductor Diodes Division

DIODE MODULE 100V 70A D-55

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 70A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 15mA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: D-55 T-Module
  • Supplier Device Package: D-55
  • Operating Temperature - Junction: -
package: D-55 T-Module
Voorraad3.184
100V
70A
-
Standard Recovery >500ns, > 200mA (Io)
-
15mA @ 100V
-
Chassis Mount
D-55 T-Module
D-55
-
HSM320GE3/TR13
Microsemi Corporation

DIODE SCHOTTKY 3A 20V SMCG

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
package: -
Voorraad7.808
-
-
-
-
-
-
-
-
-
-
-
FESB8GT-E3/45
Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 8A TO263AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
  • Operating Temperature - Junction: -55°C ~ 150°C
package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Voorraad3.504
400V
8A
1.3V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 400V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB
-55°C ~ 150°C
MBR2045EMFST3G
ON Semiconductor

DIODE SCHOTTKY 45V 20A 5DFN

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 640mV @ 20A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 400µA @ 45V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN, 5 Leads
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Operating Temperature - Junction: -55°C ~ 150°C
package: 8-PowerTDFN, 5 Leads
Voorraad4.288
45V
20A
640mV @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
-
400µA @ 45V
-
Surface Mount
8-PowerTDFN, 5 Leads
5-DFN (5x6) (8-SOFL)
-55°C ~ 150°C
SS1P4L-M3/85A
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 1A DO220AA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 480mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 150µA @ 40V
  • Capacitance @ Vr, F: 130pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-220AA
  • Supplier Device Package: DO-220AA (SMP)
  • Operating Temperature - Junction: -55°C ~ 150°C
package: DO-220AA
Voorraad6.944
40V
1A
480mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
150µA @ 40V
130pF @ 4V, 1MHz
Surface Mount
DO-220AA
DO-220AA (SMP)
-55°C ~ 150°C
LL5819 L0G
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 1A, 4

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 900mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 40V
  • Capacitance @ Vr, F: 110pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AB, MELF
  • Supplier Device Package: MELF
  • Operating Temperature - Junction: -65°C ~ 125°C
package: DO-213AB, MELF
Voorraad5.360
40V
1A
900mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 40V
110pF @ 4V, 1MHz
Surface Mount
DO-213AB, MELF
MELF
-65°C ~ 125°C
GSD2004W-HE3-18
Vishay Semiconductor Diodes Division

DIODE GEN PURP 240V 225MA SOD123

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 240V
  • Current - Average Rectified (Io): 225mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 100nA @ 240V
  • Capacitance @ Vr, F: 5pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123
  • Supplier Device Package: SOD-123
  • Operating Temperature - Junction: 150°C (Max)
package: SOD-123
Voorraad2.384
240V
225mA (DC)
1V @ 100mA
Fast Recovery =< 500ns, > 200mA (Io)
50ns
100nA @ 240V
5pF @ 0V, 1MHz
Surface Mount
SOD-123
SOD-123
150°C (Max)
MBR6060PT C0G
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 60A,

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io): 60A
  • Voltage - Forward (Vf) (Max) @ If: 930mV @ 60A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 60V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (TO-3P)
  • Operating Temperature - Junction: -55°C ~ 150°C
package: TO-247-3
Voorraad7.424
60V
60A
930mV @ 60A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 60V
-
Through Hole
TO-247-3
TO-247AD (TO-3P)
-55°C ~ 150°C
5819SMJE3/TR13
Microsemi Corporation

DIODE SCHOTTKY 40V 1A DO214AA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 40V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA
  • Operating Temperature - Junction: -55°C ~ 150°C
package: DO-214AA, SMB
Voorraad4.800
40V
1A
550mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 40V
-
Surface Mount
DO-214AA, SMB
DO-214AA
-55°C ~ 150°C
RB751ZS-40T2R
Rohm Semiconductor

DIODE SCHOTTKY 30V 30MA GMD2

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 30mA
  • Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500 nA @ 30 V
  • Capacitance @ Vr, F: 1.4pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 0201 (0603 Metric)
  • Supplier Device Package: GMD2
  • Operating Temperature - Junction: 125°C
package: -
Request a Quote
30 V
30mA
370 mV @ 1 mA
Small Signal =< 200mA (Io), Any Speed
-
500 nA @ 30 V
1.4pF @ 1V, 1MHz
Surface Mount
0201 (0603 Metric)
GMD2
125°C
SE8D20GHM3-H
Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 400V 2A SLIMSMAW

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.2 µs
  • Current - Reverse Leakage @ Vr: 5 µA @ 400 V
  • Capacitance @ Vr, F: 12pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-221AC, SMA Flat Leads
  • Supplier Device Package: SlimSMAW (DO-221AD)
  • Operating Temperature - Junction: -55°C ~ 175°C
package: -
Voorraad43.800
400 V
2A
1.1 V @ 2 A
Standard Recovery >500ns, > 200mA (Io)
1.2 µs
5 µA @ 400 V
12pF @ 4V, 1MHz
Surface Mount
DO-221AC, SMA Flat Leads
SlimSMAW (DO-221AD)
-55°C ~ 175°C
MBR3200_R2_00001
Panjit International Inc.

DIODE SCHOTTKY 200V 3A DO201AD

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 µA @ 200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -65°C ~ 150°C
package: -
Request a Quote
200 V
3A
900 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
-
50 µA @ 200 V
-
Through Hole
DO-201AD, Axial
DO-201AD
-65°C ~ 150°C
EGL34AHE3_A-H
Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 50V 500MA DO213AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50 V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 500 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 50 V
  • Capacitance @ Vr, F: 7pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AA (Glass)
  • Supplier Device Package: DO-213AA (GL34)
  • Operating Temperature - Junction: -65°C ~ 175°C
package: -
Request a Quote
50 V
500mA
1.25 V @ 500 mA
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
5 µA @ 50 V
7pF @ 4V, 1MHz
Surface Mount
DO-213AA (Glass)
DO-213AA (GL34)
-65°C ~ 175°C
S3JHM3_A-H
Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 600V 3A DO214AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2.5 µs
  • Current - Reverse Leakage @ Vr: 10 µA @ 600 V
  • Capacitance @ Vr, F: 60pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB (SMC)
  • Operating Temperature - Junction: -55°C ~ 150°C
package: -
Request a Quote
600 V
3A
1.15 V @ 2.5 A
Standard Recovery >500ns, > 200mA (Io)
2.5 µs
10 µA @ 600 V
60pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
SURS8360T3G-GA01
onsemi

DIODE GEN PURP 600V 4A SMC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 4 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: SMC
  • Operating Temperature - Junction: -65°C ~ 175°C
package: -
Request a Quote
600 V
4A
1.28 V @ 4 A
Fast Recovery =< 500ns, > 200mA (Io)
75 ns
10 µA @ 600 V
-
Surface Mount
DO-214AB, SMC
SMC
-65°C ~ 175°C
RHRP30120-F102
onsemi

DIODE GEN PURP 1.2KV 30A TO220-2

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 30 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 85 ns
  • Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220-2
  • Operating Temperature - Junction: -65°C ~ 175°C
package: -
Request a Quote
1200 V
30A
3.2 V @ 30 A
Fast Recovery =< 500ns, > 200mA (Io)
85 ns
250 µA @ 1200 V
-
Through Hole
TO-220-2
TO-220-2
-65°C ~ 175°C
S3MBQ-13-F
Diodes Incorporated

DIODE GEN PURP 1KV 3A SMC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
  • Capacitance @ Vr, F: 40pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: SMC
  • Operating Temperature - Junction: -65°C ~ 150°C
package: -
Request a Quote
1000 V
3A
-
Standard Recovery >500ns, > 200mA (Io)
-
10 µA @ 1000 V
40pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
SMC
-65°C ~ 150°C
W2340JK120
IXYS

DIODE GEN PURP 1.2KV 2340A W113

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 2340A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AB, B-PUK
  • Supplier Device Package: W113
  • Operating Temperature - Junction: -
package: -
Request a Quote
1200 V
2340A
-
Standard Recovery >500ns, > 200mA (Io)
-
-
-
Clamp On
DO-200AB, B-PUK
W113
-
UGA15120
Taiwan Semiconductor Corporation

DIODE GEN PURP 1.2KV 15A TO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 2.9 V @ 15 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 65 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -55°C ~ 175°C
package: -
Request a Quote
1200 V
15A
2.9 V @ 15 A
Fast Recovery =< 500ns, > 200mA (Io)
65 ns
5 µA @ 1200 V
-
Through Hole
TO-220-2
TO-220AC
-55°C ~ 175°C
FR305-AP
Micro Commercial Co

DIODE GEN PURP 600V 3A DO201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 250 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 600 V
  • Capacitance @ Vr, F: 65pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -55°C ~ 150°C
package: -
Request a Quote
600 V
3A
1.3 V @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
250 ns
10 µA @ 600 V
65pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
UTR41
Microchip Technology

DIODE GEN PURP 400V 1A A AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 500 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 350 ns
  • Current - Reverse Leakage @ Vr: 3 µA @ 400 V
  • Capacitance @ Vr, F: 60pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: A, Axial
  • Supplier Device Package: A, Axial
  • Operating Temperature - Junction: -65°C ~ 175°C
package: -
Request a Quote
400 V
1A
1.1 V @ 500 mA
Fast Recovery =< 500ns, > 200mA (Io)
350 ns
3 µA @ 400 V
60pF @ 0V, 1MHz
Through Hole
A, Axial
A, Axial
-65°C ~ 175°C
FDH333_NL
Fairchild Semiconductor

DIODE GEN PURP 125V 200MA DO35

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 125 V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 200 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 3 nA @ 125 V
  • Capacitance @ Vr, F: 6pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AH, DO-35, Axial
  • Supplier Device Package: DO-204AH (DO-35)
  • Operating Temperature - Junction: 175°C (Max)
package: -
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125 V
200mA
1.05 V @ 200 mA
Small Signal =< 200mA (Io), Any Speed
-
3 nA @ 125 V
6pF @ 0V, 1MHz
Through Hole
DO-204AH, DO-35, Axial
DO-204AH (DO-35)
175°C (Max)
SS36C
MDD

DIODE SCHOTTKY 60V 3A

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500 µA @ 60 V
  • Capacitance @ Vr, F: 450pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
package: -
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60 V
3A
700 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
-
500 µA @ 60 V
450pF @ 4V, 1MHz
Surface Mount
-
-
-
STPS2H100AFY
STMicroelectronics

DIODE SCHOTT 100V 2A SOD128FLAT

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1 µA @ 100 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-128
  • Supplier Device Package: SOD128Flat
  • Operating Temperature - Junction: -40°C ~ 175°C
package: -
Voorraad33.564
100 V
2A
790 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
-
1 µA @ 100 V
-
Surface Mount
SOD-128
SOD128Flat
-40°C ~ 175°C