Pagina 366 - Diodes - Gelijkrichters - Single | Discrete halfgeleiderproducten | Heisener Electronics
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Diodes - Gelijkrichters - Single

Archief 52.788
Pagina  366/1.886
Afbeelding
Onderdeelnummer
Fabrikant
Omschrijving
package
Voorraad
Aantal
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
hot SS5P4-E3/86A
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 5A TO277A

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 520mV @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 250µA @ 40V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -55°C ~ 150°C
package: TO-277, 3-PowerDFN
Voorraad1.974.876
40V
5A
520mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
250µA @ 40V
-
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 150°C
1N4006FF
ON Semiconductor

DIODE GEN PURP 800V 1A DO41

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10µA @ 800V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-41
  • Operating Temperature - Junction: -65°C ~ 175°C
package: DO-204AL, DO-41, Axial
Voorraad3.632
800V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 800V
-
Through Hole
DO-204AL, DO-41, Axial
DO-41
-65°C ~ 175°C
VS-11DQ10
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 100V 1.1A DO204AL

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 1.1A
  • Voltage - Forward (Vf) (Max) @ If: 850mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -40°C ~ 150°C
package: DO-204AL, DO-41, Axial
Voorraad2.560
100V
1.1A
850mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 100V
-
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-40°C ~ 150°C
JANTXV1N1206A
Microsemi Corporation

DIODE GEN PURP 600V 12A DO203AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 12A
  • Voltage - Forward (Vf) (Max) @ If: 1.35V @ 38A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AA, DO-4, Stud
  • Supplier Device Package: DO-203AA (DO-4)
  • Operating Temperature - Junction: -65°C ~ 150°C
package: DO-203AA, DO-4, Stud
Voorraad7.184
600V
12A
1.35V @ 38A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 600V
-
Chassis, Stud Mount
DO-203AA, DO-4, Stud
DO-203AA (DO-4)
-65°C ~ 150°C
245NQ015R-1
SMC Diode Solutions

DIODE SCHOTTKY 15V 240A PRM1-1

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 15V
  • Current - Average Rectified (Io): 240A
  • Voltage - Forward (Vf) (Max) @ If: 400mV @ 240A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 80mA @ 15V
  • Capacitance @ Vr, F: 15800pF @ 5V, 1MHz
  • Mounting Type: Chassis Mount
  • Package / Case: HALF-PAK
  • Supplier Device Package: PRM1-1 (Half Pak Module)
  • Operating Temperature - Junction: -55°C ~ 125°C
package: HALF-PAK
Voorraad6.080
15V
240A
400mV @ 240A
Fast Recovery =< 500ns, > 200mA (Io)
-
80mA @ 15V
15800pF @ 5V, 1MHz
Chassis Mount
HALF-PAK
PRM1-1 (Half Pak Module)
-55°C ~ 125°C
JANTX1N6077
Microsemi Corporation

DIODE GEN PURP 100V 1.3A AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 1.3A
  • Voltage - Forward (Vf) (Max) @ If: 1.76V @ 18.8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 30ns
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: A, Axial
  • Supplier Device Package: A-PAK
  • Operating Temperature - Junction: -65°C ~ 155°C
package: A, Axial
Voorraad5.056
100V
1.3A
1.76V @ 18.8A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
5µA @ 100V
-
Through Hole
A, Axial
A-PAK
-65°C ~ 155°C
HSM845G/TR13
Microsemi Corporation

DIODE SCHOTTKY 45V 8A DO215AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 620mV @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 250µA @ 45V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-215AB, SMC Gull Wing
  • Supplier Device Package: DO-215AB
  • Operating Temperature - Junction: -55°C ~ 175°C
package: DO-215AB, SMC Gull Wing
Voorraad4.608
45V
8A
620mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
-
250µA @ 45V
-
Surface Mount
DO-215AB, SMC Gull Wing
DO-215AB
-55°C ~ 175°C
MBRF2035HC0G
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 20A,

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 35V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 750mV @ 20A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200µA @ 35V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack
  • Supplier Device Package: ITO-220AC
  • Operating Temperature - Junction: -55°C ~ 150°C
package: TO-220-2 Full Pack
Voorraad3.616
35V
20A
750mV @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 35V
-
Through Hole
TO-220-2 Full Pack
ITO-220AC
-55°C ~ 150°C
VS-6EWX06FNTRL-M3
Vishay Semiconductor Diodes Division

DIODE HYPERFAST 600V 6A DPAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 3.1V @ 6A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 21ns
  • Current - Reverse Leakage @ Vr: 20µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-PAK (TO-252AA)
  • Operating Temperature - Junction: -65°C ~ 175°C
package: TO-252-3, DPak (2 Leads + Tab), SC-63
Voorraad2.480
600V
6A
3.1V @ 6A
Fast Recovery =< 500ns, > 200mA (Io)
21ns
20µA @ 600V
-
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-PAK (TO-252AA)
-65°C ~ 175°C
VS-6ESH06HM3/87A
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 6A TO277A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 6A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 40ns
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -65°C ~ 175°C
package: TO-277, 3-PowerDFN
Voorraad2.032
600V
6A
1.8V @ 6A
Fast Recovery =< 500ns, > 200mA (Io)
40ns
5µA @ 600V
-
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-65°C ~ 175°C
SGL41-40HE3/97
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 1A DO213AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 40V
  • Capacitance @ Vr, F: 110pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AB, MELF
  • Supplier Device Package: DO-213AB
  • Operating Temperature - Junction: -55°C ~ 125°C
package: DO-213AB, MELF
Voorraad5.024
40V
1A
500mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 40V
110pF @ 4V, 1MHz
Surface Mount
DO-213AB, MELF
DO-213AB
-55°C ~ 125°C
SBRS8190T3G-VF01
ON Semiconductor

DIODE SCHOTTKY 90V 1A SMB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 90V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 750mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 90V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: SMB
  • Operating Temperature - Junction: -65°C ~ 175°C
package: DO-214AA, SMB
Voorraad2.896
90V
1A
750mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 90V
-
Surface Mount
DO-214AA, SMB
SMB
-65°C ~ 175°C
CGRM4005-HF
Comchip Technology

DIODE GEN PURP 600V 1A SOD123

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123T
  • Supplier Device Package: Mini SMA/SOD-123
  • Operating Temperature - Junction: -55°C ~ 150°C
package: SOD-123T
Voorraad7.968
600V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 600V
15pF @ 4V, 1MHz
Surface Mount
SOD-123T
Mini SMA/SOD-123
-55°C ~ 150°C
SR2010-TP
Micro Commercial Co

DIODE SCHOTTKY 100V 2A DO41

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 850mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 100V
  • Capacitance @ Vr, F: 170pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-41
  • Operating Temperature - Junction: -55°C ~ 125°C
package: DO-204AL, DO-41, Axial
Voorraad52.758
100V
2A
850mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 100V
170pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-41
-55°C ~ 125°C
SMD14PLQ-TP
Micro Commercial Co

SCHOTTKY BARRIER RECTIFIERS 40V

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 40 V
  • Capacitance @ Vr, F: 95pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: SOD-123FL
  • Operating Temperature - Junction: -55°C ~ 150°C
package: -
Voorraad14.985
40 V
1A
500 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
-
100 µA @ 40 V
95pF @ 4V, 1MHz
Surface Mount
SOD-123F
SOD-123FL
-55°C ~ 150°C
GD05MPS17J
GeneSiC Semiconductor

DIODE SIL CARB 1.7KV 18A TO263-7

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
1N5399GP-AP
Micro Commercial Co

DIODE GEN PURP 1KV 1.5A DO15

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000 V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AC, DO-15, Axial
  • Supplier Device Package: DO-15
  • Operating Temperature - Junction: -55°C ~ 150°C
package: -
Request a Quote
1000 V
1.5A
1.4 V @ 1.5 A
Standard Recovery >500ns, > 200mA (Io)
-
5 µA @ 1000 V
15pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-15
-55°C ~ 150°C
MSASC100W45HS-TR
Microchip Technology

DIODE POWER SCHOTTKY

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
PU3BFSH
Taiwan Semiconductor Corporation

DIODE GEN PURP 100V 3A SOD128

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 930 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25 ns
  • Current - Reverse Leakage @ Vr: 2 µA @ 100 V
  • Capacitance @ Vr, F: 47pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-128
  • Supplier Device Package: SOD-128
  • Operating Temperature - Junction: -55°C ~ 175°C
package: -
Voorraad39.861
100 V
3A
930 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
25 ns
2 µA @ 100 V
47pF @ 4V, 1MHz
Surface Mount
SOD-128
SOD-128
-55°C ~ 175°C
SD175SC200A-T1
SMC Diode Solutions

DIODE SCHOTTKY 200V 30A DIE

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 920 mV @ 30 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 700 µA @ 200 V
  • Capacitance @ Vr, F: 600pF @ 5V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
  • Operating Temperature - Junction: -55°C ~ 200°C
package: -
Request a Quote
200 V
30A
920 mV @ 30 A
Fast Recovery =< 500ns, > 200mA (Io)
-
700 µA @ 200 V
600pF @ 5V, 1MHz
Surface Mount
Die
Die
-55°C ~ 200°C
JANS1N5804US-TR
Microchip Technology

DIODE GEN PURP 100V 1A A AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2.5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 150 V
  • Capacitance @ Vr, F: 25pF @ 10V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: A, Axial
  • Supplier Device Package: A, Axial
  • Operating Temperature - Junction: -65°C ~ 175°C
package: -
Request a Quote
100 V
1A
975 mV @ 2.5 A
Fast Recovery =< 500ns, > 200mA (Io)
25 ns
1 µA @ 150 V
25pF @ 10V, 1MHz
Through Hole
A, Axial
A, Axial
-65°C ~ 175°C
6A20GH
Taiwan Semiconductor Corporation

DIODE GEN PURP 200V 6A R-6

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 200 V
  • Capacitance @ Vr, F: 60pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: R-6, Axial
  • Supplier Device Package: R-6
  • Operating Temperature - Junction: -55°C ~ 150°C
package: -
Request a Quote
200 V
6A
1 V @ 6 A
Standard Recovery >500ns, > 200mA (Io)
-
10 µA @ 200 V
60pF @ 4V, 1MHz
Through Hole
R-6, Axial
R-6
-55°C ~ 150°C
S42160
Microchip Technology

RECTIFIER

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600 V
  • Current - Average Rectified (Io): 125A
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 µA @ 1600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-205AA, DO-8, Stud
  • Supplier Device Package: DO-205AA (DO-8)
  • Operating Temperature - Junction: -65°C ~ 200°C
package: -
Request a Quote
1600 V
125A
1.2 V @ 200 A
Standard Recovery >500ns, > 200mA (Io)
-
50 µA @ 1600 V
-
Stud Mount
DO-205AA, DO-8, Stud
DO-205AA (DO-8)
-65°C ~ 200°C
HER203G
Taiwan Semiconductor Corporation

DIODE GEN PURP 200V 2A DO204AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 200 V
  • Capacitance @ Vr, F: 35pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AC, DO-15, Axial
  • Supplier Device Package: DO-204AC (DO-15)
  • Operating Temperature - Junction: -55°C ~ 150°C
package: -
Request a Quote
200 V
2A
1 V @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
5 µA @ 200 V
35pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
RS2AWF-HF
Comchip Technology

DIODE GEN PURP 50V 2A SOD123F

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 50 V
  • Capacitance @ Vr, F: 30pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: SOD-123F
  • Operating Temperature - Junction: -55°C ~ 150°C
package: -
Request a Quote
50 V
2A
1.3 V @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
150 ns
5 µA @ 50 V
30pF @ 4V, 1MHz
Surface Mount
SOD-123F
SOD-123F
-55°C ~ 150°C
S8JS-E3-H
Vishay

8A, 600V, STD RECT , SMC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 1.6A
  • Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 3.6 µs
  • Current - Reverse Leakage @ Vr: 10 µA @ 600 V
  • Capacitance @ Vr, F: 72pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB (SMC)
  • Operating Temperature - Junction: -55°C ~ 150°C
package: -
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600 V
1.6A
975 mV @ 8 A
Fast Recovery =< 500ns, > 200mA (Io)
3.6 µs
10 µA @ 600 V
72pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
JAN1N5768
Microchip Technology

DIODE GEN PURP 300MA 10CFLATPACK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): 300mA
  • Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 500 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 40 ns
  • Current - Reverse Leakage @ Vr: 100 nA @ 40 V
  • Capacitance @ Vr, F: 4pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 10-CFlatPack
  • Supplier Device Package: 10-CFlatPack
  • Operating Temperature - Junction: -65°C ~ 150°C
package: -
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-
300mA
1.5 V @ 500 mA
Fast Recovery =< 500ns, > 200mA (Io)
40 ns
100 nA @ 40 V
4pF @ 0V, 1MHz
Surface Mount
10-CFlatPack
10-CFlatPack
-65°C ~ 150°C
NDSH40120C-F155
onsemi

SIC DIODE GEN2.0 1200V TO247-2L

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 46A
  • Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 40 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 200 µA @ 1.2 kV
  • Capacitance @ Vr, F: 2840pF @ 1V, 100kHz
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247-2
  • Operating Temperature - Junction: -55°C ~ 175°C
package: -
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1200 V
46A
1.75 V @ 40 A
No Recovery Time > 500mA (Io)
0 ns
200 µA @ 1.2 kV
2840pF @ 1V, 100kHz
Through Hole
TO-247-2
TO-247-2
-55°C ~ 175°C