Toshiba's TCK42xG gate driver family of solutions addresses various challenges in power multiplexing. The TCK421G is the first product in the series and is designed for 20 V lines. Thanks to its built-in slew rate control and discharge functions, the TCK421G offers a 3ms start-up time, which helps simplify sequencing without the need for additional components. This series features improved drive and discharge capabilities that help turn MOSFETs on and off faster.
Power multiplexing is an important feature in applications that require backup power from the main power source or swap between charging protocols such as wireless to USB. This gate driver is available in various MOSFET configurations. For better power density, a common drain MOSFET is ideal because the TCK421G is designed with two gate drive pins so it can be used with MOSFETs such as the SSM10N954L (12 V/2.2 mΩ typical at 3.8 V) use. Therefore, this common-drain MOSFET configuration can save 75% space compared to a standard 5 mm x 6 mm MOSFET.
The TCK421G has an undervoltage lockout (UVLO) of 2.2 V and an overvoltage lockout (OVLO) of 20 V. This helps downstream ICs be protected and within recommended specifications. Adding a Zener diode is an additional way to protect the gate driver TCK421G if overshoot voltage is a concern.
