Toshiba Electronic Components & Storage Corporation announced the launch of a new power device, the third-generation silicon carbide (SiC) MOSFET "TWxxNxxxC series". This series features low on-resistance, which significantly reduces switching losses. The 10 products in this series include 5 1200V products and 5 650V products
The new product's on-resistance per unit area (RDS(ON)A) has dropped by about 43%, resulting in a reduction of "drain-source on-resistance × gate-drain charge (RDS(ON) × Qgd)" by about 80%, which is An important indicator that reflects the relationship between conduction loss and switching loss. This reduces switching losses by approximately 20%, while reducing on-resistance and switching losses. Therefore, the new product helps to increase the efficiency of the equipment.
