Toshiba Electronics Europe has released a series of new next-generation 650V power MOSFETs designed for server power supplies in data centers, solar (PV) power conditioners, UPS and other industrial applications.
The first device of the DTMOS VI series is the TK040N65Z, which is a 650V device that provides continuous drain current (ID) up to 57A and 228A when generating a pulse (IDP). The new device has a very low drain-source on-resistance (RDS (ON)) of 0.04 Ohm (typically 0.033 Ohm), which reduces losses in power applications. Due to the reduced capacitance in the design, enhanced-mode devices are well-suited for modern high-speed power supplies.
Reducing key performance indicators / FoM-RDS (ON) x Qgd can improve power efficiency. Compared with the previous DTMOS IV-H device, this important index of the device has been improved by 40%, which has achieved a significant increase in power efficiency of about 0.36% in a 2.5kW PFC circuit.
The new device is contained in an industry-standard TO-247 package, ensuring compatibility with traditional designs and applicability to new projects.
