Toshiba Europe introduced the TPWR7940PB and TPW1R104PB 40V N-channel power MOSFETs in a DSOP Advance (WF) package with double-sided cooling. TPWR7940PB is a 40V maximum 0.79mOhm MOSFET in DSOP Advance (WF) L package, while TPW1R104PB is a 40V maximum 1.14mOhm MOSFET in DSOP Advance (WF) M package. Both devices are based on the latest trench structure U-MOSIX-H process and are AEC-Q101 qualified. They are targeted at automotive applications including electric power steering, load switches and electric pumps.
Both devices are available in a 5mm x 6mm package with 8 pins. The exposed surface areas of the top metal plates of these devices are different. The top area of ??DSOP Advance (WF) M is about 8 mm2, and the top area of ??DSOP Advance (WF) L is about 12 mm2. Measured in the company's test environment, the maximum channel-to-top thermal resistance of TPW1R104PB is 1.5K / W, and the maximum channel-to-top thermal resistance of TPWR7940PB is 0.93K / W. By connecting the top exposed area to the heat sink through an insulation layer, its excellent thermal performance can be achieved.
These packages are compatible with the footprint of the SOP Advance (WF) package, which does not have any exposed top metal areas. The package uses a wettable side terminal structure that allows AOI to the solder joints on the PCB. AOI is particularly important in automotive applications where welding quality needs to be verified.
