Microchip Technology has announced a collaboration with the European Commission (EC) and industry consortium Clean Sky to develop the first aerospace-compliant power conversion and motor drive systems to facilitate more efficient, lighter and more compact power conversion and motor drive systems. No base power module.
In collaboration with the company in support of the aviation industry goal set by the European Union to provide climate-neutral aviation by 2050, Microchip's BL1, BL2, BL3 series of baseless power modules provide greater efficiency in AC/DC and DC/AC power conversion and generation by integrating their silicon carbide power semiconductor technology. The innovative design is 40 percent lighter than other products due to improved substrates and about 10 percent cheaper than standard power modules that include metal substrates. These BL1, BL2, and BL3 devices meet all mechanical and environmental compliance guidelines specified in THE RTCA DO-160G Airborne Equipment Environmental Conditions and Test Procedures G (August 2010).
These modules come in thin, low-inductance packages with power and signal connectors that designers can solder directly to the PCB for faster development and improved reliability. Furthermore, the same height between modules in the family allows them to be connected in parallel or in parallel with three-phase Bridges and other topologies to provide higher performance power converters and inverters.
"Microchip's powerful new modules will help drive innovation in aircraft electrification and ultimately move toward a low-emission future," said Leon Gross, vice president, Microchip's Discrete Products Business Unit. "This is a technology that makes the system possible and opens up a new era of flight."
In packages offering power from 100W to more than 10kW, the series offers a variety of topology options including phase legs, full Bridges, asymmetric Bridges, boost, buck and dual common sources. These highly reliable power modules range in voltage from 600V to 1200V for silicon carbide MOSFEts and IGBT to 1600V for rectifier diodes. The series integrates silicon carbide MOSFET and Schottky barrier diode to maximize system efficiency.
